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Issues
13 September 1999
ISSN 0003-6951
EISSN 1077-3118
LASERS, OPTICS, AND OPTOELECTRONICS
1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
Appl. Phys. Lett. 75, 1491–1493 (1999)
https://doi.org/10.1063/1.124732
Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 75, 1494–1496 (1999)
https://doi.org/10.1063/1.124733
Photonic band engineering through tailored microstructural order
Appl. Phys. Lett. 75, 1497–1499 (1999)
https://doi.org/10.1063/1.124734
Identification of the intrinsic self-trapped hole center in
K. T. Stevens; N. Y. Garces; L. E. Halliburton; M. Yan; N. P. Zaitseva; J. J. DeYoreo; G. C. Catella; J. R. Luken
Appl. Phys. Lett. 75, 1503–1505 (1999)
https://doi.org/10.1063/1.124736
Photothermal fixation of laser-trapped polymer microparticles on polymer substrates
Jaihyung Won; Takanori Inaba; Hiroshi Masuhara; Hideki Fujiwara; Keiji Sasaki; Shigeru Miyawaki; Setsuya Sato
Appl. Phys. Lett. 75, 1506–1508 (1999)
https://doi.org/10.1063/1.124737
Electrically tunable, room-temperature quantum-cascade lasers
Appl. Phys. Lett. 75, 1509–1511 (1999)
https://doi.org/10.1063/1.124738
Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers
Appl. Phys. Lett. 75, 1512–1514 (1999)
https://doi.org/10.1063/1.124739
High-power laser light source for near-field optics and its application to high-density optical data storage
Afshin Partovi; David Peale; Matthias Wuttig; Cherry A. Murray; George Zydzik; Leslie Hopkins; Kirk Baldwin; William S. Hobson; James Wynn; John Lopata; Lisa Dhar; Rob Chichester; James H-J Yeh
Appl. Phys. Lett. 75, 1515–1517 (1999)
https://doi.org/10.1063/1.124740
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Metal–organic atomic-layer deposition of titanium–silicon–nitride films
Appl. Phys. Lett. 75, 1521–1523 (1999)
https://doi.org/10.1063/1.124742
Resonantly enhanced Raman scattering and high-order Raman spectra of single-walled carbon nanotubes
Appl. Phys. Lett. 75, 1524–1526 (1999)
https://doi.org/10.1063/1.124743
Size effect on the superconducting transition of embedded lead particles in an Al–Cu–V amorphous matrix
Appl. Phys. Lett. 75, 1527–1528 (1999)
https://doi.org/10.1063/1.124744
Waveguide luminescence and Raman spectroscopy: Characterization of an inhomogeneous film at different depths
Appl. Phys. Lett. 75, 1529–1531 (1999)
https://doi.org/10.1063/1.124745
Nonlinear optical properties of a coherent array of submicron spheres (opal) embedded with Si nanoparticles
Appl. Phys. Lett. 75, 1532–1534 (1999)
https://doi.org/10.1063/1.124746
Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
Appl. Phys. Lett. 75, 1535–1537 (1999)
https://doi.org/10.1063/1.124747
Electrochromic coloration efficiency of thin films as a function of oxygen deficiency
Appl. Phys. Lett. 75, 1541–1543 (1999)
https://doi.org/10.1063/1.124782
Nonlinear optical properties of self-organized complex oxide quantum dots grown by pulsed laser deposition
Appl. Phys. Lett. 75, 1547–1549 (1999)
https://doi.org/10.1063/1.124750
Substitution sites of Pb and Y in X-ray photoelectron diffraction as fingerprinting tool
Appl. Phys. Lett. 75, 1550–1552 (1999)
https://doi.org/10.1063/1.124751
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
The Bloch–Grüneisen mobility of two-dimensional electron gas in AlGaN/GaN heterostructures
Appl. Phys. Lett. 75, 1565–1567 (1999)
https://doi.org/10.1063/1.124756
Shallow p-type SiGeC layers synthesized by ion implantation of Ge, C, and B in Si
Appl. Phys. Lett. 75, 1568–1570 (1999)
https://doi.org/10.1063/1.124757
Boron-related minority-carrier trapping centers in p-type silicon
Appl. Phys. Lett. 75, 1571–1573 (1999)
https://doi.org/10.1063/1.124758
Fluorescence scanning near-field optical microscopy of conjugated polymer blends
Appl. Phys. Lett. 75, 1574–1576 (1999)
https://doi.org/10.1063/1.124783
Surface plasmon-enhanced photoluminescence from a single quantum well
Appl. Phys. Lett. 75, 1577–1579 (1999)
https://doi.org/10.1063/1.124759
Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor
Appl. Phys. Lett. 75, 1580–1582 (1999)
https://doi.org/10.1063/1.124760
Electroabsorption and retardation due to intersubband transitions in coupled quantum wells
Appl. Phys. Lett. 75, 1583–1585 (1999)
https://doi.org/10.1063/1.124761
A surfactant-mediated relaxed graded layer with a very low threading dislocation density and smooth surface
J. L. Liu; C. D. Moore; G. D. U’Ren; Y. H. Luo; Y. Lu; G. Jin; S. G. Thomas; M. S. Goorsky; K. L. Wang
Appl. Phys. Lett. 75, 1586–1588 (1999)
https://doi.org/10.1063/1.124762
MAGNETISM AND SUPERCONDUCTIVITY
Influence of target–substrate angle on the elemental concentration of c-axis thin films
Appl. Phys. Lett. 75, 1589–1591 (1999)
https://doi.org/10.1063/1.124763
Ferromagnetic cluster behaviors and magnetoresistance in Ni-doped LaSrMn systems
Appl. Phys. Lett. 75, 1592–1594 (1999)
https://doi.org/10.1063/1.124764
Anisotropic electrical transport property in and epitaxial thin films
Appl. Phys. Lett. 75, 1598–1600 (1999)
https://doi.org/10.1063/1.124766
High-performance resin-bonded magnets produced from zinc metal-coated fine powders
Appl. Phys. Lett. 75, 1601–1603 (1999)
https://doi.org/10.1063/1.124767
DIELECTRICS AND FERROELECTRICITY
Domain imaging and local piezoelectric properties of the (200)-predominant thin film
Appl. Phys. Lett. 75, 1610–1612 (1999)
https://doi.org/10.1063/1.124770
DEVICE PHYSICS
High breakdown voltage symmetric double δ-doped high electron mobility transistor
Appl. Phys. Lett. 75, 1616–1618 (1999)
https://doi.org/10.1063/1.124772
Ion-beam-induced surface damages on tris-(8-hydroxyquinoline) aluminum
Appl. Phys. Lett. 75, 1619–1621 (1999)
https://doi.org/10.1063/1.124773
to switching of quantum conductance associated with a change in nanoscale ferromagnetic domain structure
Appl. Phys. Lett. 75, 1622–1624 (1999)
https://doi.org/10.1063/1.124774
Experimental demonstration of electrically controllable photonic crystals at centimeter wavelengths
Appl. Phys. Lett. 75, 1625–1627 (1999)
https://doi.org/10.1063/1.124775
The cause of the anomalously small electric field effect in thin films of Bi
Appl. Phys. Lett. 75, 1628–1630 (1999)
https://doi.org/10.1063/1.124776
INTERDISCIPLINARY AND GENERAL PHYSICS
Origin of yield problems of single electron devices based on evaporated granular films
Appl. Phys. Lett. 75, 1634–1636 (1999)
https://doi.org/10.1063/1.124778
Dual integrated actuators for extended range high speed atomic force microscopy
Appl. Phys. Lett. 75, 1637–1639 (1999)
https://doi.org/10.1063/1.124779
Atomic steps with tuning-fork-based noncontact atomic force microscopy
Appl. Phys. Lett. 75, 1640–1642 (1999)
https://doi.org/10.1063/1.124780
ERRATA
Erratum: “Enhanced GaN decomposition in near atmospheric pressures” [Appl. Phys. Lett. 73, 2018 (1998)]
Appl. Phys. Lett. 75, 1646 (1999)
https://doi.org/10.1063/1.124830
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
J. Wang, D. G. Rickel, et al.