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Volume 75, Issue 1

5 July 1999

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
ELECTRONIC TRANSPORT AND SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

1.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect

Baojun Li; Guozheng Li; Enke Liu; Zuimin Jiang; Chengwen Pei; Xun Wang

Appl. Phys. Lett. 75, 1–3 (1999) https://doi.org/10.1063/1.124635

View articletitled, 1.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect

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Very high-efficiency green organic light-emitting devices based on electrophosphorescence

In Special Collection: APL Classic Papers

M. A. Baldo; S. Lamansky; P. E. Burrows; M. E. Thompson; S. R. Forrest

Appl. Phys. Lett. 75, 4–6 (1999) https://doi.org/10.1063/1.124258

View articletitled, Very high-efficiency green organic light-emitting devices based on electrophosphorescence

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Emission of prompt electrons during excimer laser ablation of aluminum targets

S. Amoruso; M. Armenante; R. Bruzzese; N. Spinelli; R. Velotta; X. Wang

Appl. Phys. Lett. 75, 7–9 (1999) https://doi.org/10.1063/1.124259

View articletitled, Emission of prompt electrons during excimer laser ablation of aluminum targets

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Optical absorption edge characteristics of cubic boron nitride thin films

Guanghua Chen; Xingwang Zhang; Bo Wang; Xuemei Song; Bentao Cui; Hui Yan

Appl. Phys. Lett. 75, 10–12 (1999) https://doi.org/10.1063/1.124260

View articletitled, Optical absorption edge characteristics of cubic boron nitride thin films

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All optical mode locking of Fabry–Perot laser diode via mutual injection locking between two longitudinal modes

Hideaki Kasuya; Masakazu Mori; Ryosuke Goto; Toshio Goto; Kazuo Yamane

Appl. Phys. Lett. 75, 13–15 (1999) https://doi.org/10.1063/1.124261

View articletitled, All optical mode locking of Fabry–Perot laser diode via mutual injection locking between two longitudinal modes

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Anisotropic holographic scattering in centrosymmetric sodium nitroprusside

M. Imlau; R. Schieder; R. A. Rupp; Th. Woike

Appl. Phys. Lett. 75, 16–18 (1999) https://doi.org/10.1063/1.124262

View articletitled, Anisotropic holographic scattering in centrosymmetric sodium nitroprusside

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Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium–tin–oxide anodes

J. S. Kim; F. Cacialli; A. Cola; G. Gigli; R. Cingolani

Appl. Phys. Lett. 75, 19–21 (1999) https://doi.org/10.1063/1.124263

View articletitled, Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium–tin–oxide anodes

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Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser

Z. Zou; D. L. Huffaker; S. Csutak; D. G. Deppe

Appl. Phys. Lett. 75, 22–24 (1999) https://doi.org/10.1063/1.124264

View articletitled, Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser

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Substrate effects on GaN photoconductive detector performance

G. M. Smith; J. M. Redwing; R. P. Vaudo; E. M. Ross; J. S. Flynn; V. M. Phanse

Appl. Phys. Lett. 75, 25–27 (1999) https://doi.org/10.1063/1.124265

View articletitled, Substrate effects on GaN photoconductive detector performance

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Nonresonant femtosecond second hyperpolarizabilities of intramolecular charge-transfer molecules with great excited- and ground-state dipole-moment differences

Mikio Yamashita; Shinji Kikuma; Yoshihisa Yamaoka; Hidetoshi Murakami; Ryuji Morita; Hidemi Shigekawa

Appl. Phys. Lett. 75, 28–30 (1999) https://doi.org/10.1063/1.124266

View articletitled, Nonresonant femtosecond second hyperpolarizabilities of intramolecular charge-transfer molecules with great excited- and ground-state dipole-moment differences

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PLASMAS AND ELECTRICAL DISCHARGES

Radio frequency plasma processing effects on the emission characteristics of a MeV electron beam cathode

J. I. Rintamaki; R. M. Gilgenbach; W. E. Cohen; R. L. Jaynes; M. E. Cuneo; P. R. Menge

Appl. Phys. Lett. 75, 31–33 (1999) https://doi.org/10.1063/1.124267

View articletitled, Radio frequency plasma processing effects on the emission characteristics of a MeV electron beam cathode

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Secondary electron energy spectra emitted from radio frequency biased plasma electrodes

D. M. Shaw; M. Watanabe; H. Uchiyama; G. J. Collins

Appl. Phys. Lett. 75, 34–36 (1999) https://doi.org/10.1063/1.124268

View articletitled, Secondary electron energy spectra emitted from radio frequency biased plasma electrodes

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Modulated rf discharges as an effective tool for selecting excited species

Grazia Cicala; Mariadriana Creatore; Pietro Favia; Ritalba Lamendola; Riccardo d’Agostino

Appl. Phys. Lett. 75, 37–39 (1999) https://doi.org/10.1063/1.124269

View articletitled, Modulated rf discharges as an effective tool for selecting excited species

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Room-temperature persistent spectral hole burning in ${SrFCl:Sm}^{2+}$ films: Temporal and spatial response

M. Schnieper; F. Trotta; S. Bersier; H. Bill

Appl. Phys. Lett. 75, 40–42 (1999) https://doi.org/10.1063/1.124270

View articletitled, Room-temperature persistent spectral hole burning in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">SrFCl:Sm</mi><mrow><mi mathvariant="normal">2+</mi></mrow></msup></math></span> films: Temporal and spatial response

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Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 and 1047 nm

J. Heller; J. W. Bartha; C. C. Poon; A. C. Tam

Appl. Phys. Lett. 75, 43–45 (1999) https://doi.org/10.1063/1.124271

View articletitled, Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 and 1047 nm

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Direct measurement of strain in a Ge island on Si(001)

Peter D. Miller; Chuan-Pu Liu; William L. Henstrom; J. Murray Gibson; Y. Huang; P. Zhang; T. I. Kamins; D. P. Basile; R. Stanley Williams

Appl. Phys. Lett. 75, 46–48 (1999) https://doi.org/10.1063/1.124272

View articletitled, Direct measurement of strain in a Ge island on Si(001)

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Bulk ferromagnetic glasses prepared by flux melting and water quenching

T. D. Shen; R. B. Schwarz

Appl. Phys. Lett. 75, 49–51 (1999) https://doi.org/10.1063/1.124273

View articletitled, Bulk ferromagnetic glasses prepared by flux melting and water quenching

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Selective distribution of arsenic precipitates in low-temperature-grown III–V heterostructures

M. N. Chang; N. T. Yeh; C. M. Lu; K. C. Hsieh; J.-I. Chyi

Appl. Phys. Lett. 75, 52–54 (1999) https://doi.org/10.1063/1.124274

View articletitled, Selective distribution of arsenic precipitates in low-temperature-grown III–V heterostructures

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Au–Cu alloy nanoclusters in silica formed by ion implantation and annealing in reducing or oxidizing atmosphere

F. Gonella; G. Mattei; P. Mazzoldi; C. Sada; G. Battaglin; E. Cattaruzza

Appl. Phys. Lett. 75, 55–57 (1999) https://doi.org/10.1063/1.124275

View articletitled, Au–Cu alloy nanoclusters in silica formed by ion implantation and annealing in reducing or oxidizing atmosphere

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Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes

C. Y. Liu; Chih Chen; C. N. Liao; K. N. Tu

Appl. Phys. Lett. 75, 58–60 (1999) https://doi.org/10.1063/1.124276

View articletitled, Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes

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Stability, geometry, and electronic structure of the boron nitride $B_{36} N_{36}$ fullerene

Simone S. Alexandre; Mário S. C. Mazzoni; Hélio Chacham

Appl. Phys. Lett. 75, 61–63 (1999) https://doi.org/10.1063/1.124277

View articletitled, Stability, geometry, and electronic structure of the boron nitride <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mi mathvariant="normal">36</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">36</mi></mrow></msub></math></span> fullerene

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Electromechanical effect in freely suspended liquid crystal films

Serguei V. Yablonskii; Toshiyasu Oue; Hidetaka Nambu; Aleksey S. Mikhailov; Masanori Ozaki; Katsumi Yoshino

Appl. Phys. Lett. 75, 64–66 (1999) https://doi.org/10.1063/1.124325

View articletitled, Electromechanical effect in freely suspended liquid crystal films

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Ordinary and extraordinary refractive indices for ${Al}_{x} {Ga}_{1−x} N$ epitaxial layers

M. J. Bergmann; Ü. Özgür; H. C. Casey, Jr.; H. O. Everitt; J. F. Muth

Appl. Phys. Lett. 75, 67–69 (1999) https://doi.org/10.1063/1.124278

View articletitled, Ordinary and extraordinary refractive indices for <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> epitaxial layers

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Dynamic electron scattering distinguishes dodecahedral and tetrahedral crystallographic sites in garnet structure

János L. Lábár

Appl. Phys. Lett. 75, 70–72 (1999) https://doi.org/10.1063/1.124279

View articletitled, Dynamic electron scattering distinguishes dodecahedral and tetrahedral crystallographic sites in garnet structure

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ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Origin of the time dependence of wet oxidation of AlGaAs

Carol I. H. Ashby; Monica M. Bridges; Andrew A. Allerman; B. E. Hammons; Hong Q. Hou

Appl. Phys. Lett. 75, 73–75 (1999) https://doi.org/10.1063/1.124280

View articletitled, Origin of the time dependence of wet oxidation of AlGaAs

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Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope

M. R. Phillips; M. Toth; D. Drouin

Appl. Phys. Lett. 75, 76–78 (1999) https://doi.org/10.1063/1.124281

View articletitled, Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope

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Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy

Huajie Chen; R. M. Feenstra; P. G. Piva; R. D. Goldberg; I. V. Mitchell; G. C. Aers; P. J. Poole; S. Charbonneau

Appl. Phys. Lett. 75, 79–81 (1999) https://doi.org/10.1063/1.124282

View articletitled, Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy

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GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

F. Semond; B. Damilano; S. Vézian; N. Grandjean; M. Leroux; J. Massies

Appl. Phys. Lett. 75, 82–84 (1999) https://doi.org/10.1063/1.124283

View articletitled, GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

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Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution

I. Mukhametzhanov; Z. Wei; R. Heitz; A. Madhukar

Appl. Phys. Lett. 75, 85–87 (1999) https://doi.org/10.1063/1.124284

View articletitled, Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution

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Doping in cubic silicon–carbide

V. A. Gubanov; C. Y. Fong

Appl. Phys. Lett. 75, 88–90 (1999) https://doi.org/10.1063/1.124285

View articletitled, Doping in cubic silicon–carbide

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Amorphization of single-crystalline silicon by thermal-energy atomic hydrogen

J. H. Kang; S. K. Jo; B. Gong; P. Parkinson; D. E. Brown; J. M. White; J. G. Ekerdt

Appl. Phys. Lett. 75, 91–93 (1999) https://doi.org/10.1063/1.124286

View articletitled, Amorphization of single-crystalline silicon by thermal-energy atomic hydrogen

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Optical switching in a superconductor–semiconductor–superconductor Josephson junction

G. Bastian; E. O. Göbel; J. Schmitz; M. Walther; J. Wagner

Appl. Phys. Lett. 75, 94–96 (1999) https://doi.org/10.1063/1.124287

View articletitled, Optical switching in a superconductor–semiconductor–superconductor Josephson junction

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Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

Wai Lek Ng; M. P. Temple; P. A. Childs; F. Wellhofer; K. P. Homewood

Appl. Phys. Lett. 75, 97–99 (1999) https://doi.org/10.1063/1.124324

View articletitled, Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

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Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

Z.-H. Cai; W. Rodrigues; P. Ilinski; D. Legnini; B. Lai; W. Yun; E. D. Isaacs; K. E. Lutterodt; J. Grenko; R. Glew; S. Sputz; J. Vandenberg; R. People; M. A. Alam; M. Hybertsen; L. J. P. Ketelsen

Appl. Phys. Lett. 75, 100–102 (1999) https://doi.org/10.1063/1.124288

View articletitled, Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

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Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path

R. Teissier; D. Sicault; A. Goujon; J. L. Pelouard; F. Pardo; F. Mollot

Appl. Phys. Lett. 75, 103–105 (1999) https://doi.org/10.1063/1.124289

View articletitled, Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path

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Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

H. Eisele; O. Flebbe; T. Kalka; C. Preinesberger; F. Heinrichsdorff; A. Krost; D. Bimberg; M. Dähne-Prietsch

Appl. Phys. Lett. 75, 106–108 (1999) https://doi.org/10.1063/1.124290

View articletitled, Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

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Electron transport in starburst phenylquinoxalines

M. Redecker; D. D. C. Bradley; M. Jandke; P. Strohriegl

Appl. Phys. Lett. 75, 109–111 (1999) https://doi.org/10.1063/1.124291

View articletitled, Electron transport in starburst phenylquinoxalines

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Strong isotope effects in the dissociation kinetics of Si–H and Si–D complexes in GaAs under ultraviolet illumination

J. Chevallier; M. Barbé; E. Constant; D. Loridant-Bernard; M. Constant

Appl. Phys. Lett. 75, 112–114 (1999) https://doi.org/10.1063/1.124292

View articletitled, Strong isotope effects in the dissociation kinetics of Si–H and Si–D complexes in GaAs under ultraviolet illumination

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Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon

M. Ramamoorthy; S. T. Pantelides

Appl. Phys. Lett. 75, 115–117 (1999) https://doi.org/10.1063/1.124293

View articletitled, Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon

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MAGNETISM AND SUPERCONDUCTIVITY

Indications of antiferromagnetic interlayer coupling in ${La}_{2/3} {Ba}_{1/3} {MnO}_{3} {/LaNiO}_{3}$ multilayers

K. R. Nikolaev; A. Bhattacharya; P. A. Kraus; V. A. Vas’ko; W. K. Cooley; A. M. Goldman

Appl. Phys. Lett. 75, 118–120 (1999) https://doi.org/10.1063/1.124294

View articletitled, Indications of antiferromagnetic interlayer coupling in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">2/3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mi mathvariant="normal">1/3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/LaNiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> multilayers

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Extremely underdamped Josephson junctions for low noise applications

B. Ruggiero; C. Granata; E. Esposito; M. Russo; P. Silvestrini

Appl. Phys. Lett. 75, 121–123 (1999) https://doi.org/10.1063/1.124295

View articletitled, Extremely underdamped Josephson junctions for low noise applications

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Vacuum-tunneling magnetoresistance: The role of spin-polarized surface states

R. Wiesendanger; M. Bode; M. Getzlaff

Appl. Phys. Lett. 75, 124–126 (1999) https://doi.org/10.1063/1.124296

View articletitled, Vacuum-tunneling magnetoresistance: The role of spin-polarized surface states

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Superconducting tunneling as a probe of sputtered oxide barriers

C. L. Platt; A. S. Katz; R. C. Dynes; A. E. Berkowitz

Appl. Phys. Lett. 75, 127–129 (1999) https://doi.org/10.1063/1.124297

View articletitled, Superconducting tunneling as a probe of sputtered oxide barriers

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DIELECTRICS AND FERROELECTRICITY

Electric fatigue properties of sol–gel-derived ${Pb(Zr, Ti)O}_{3} {/PbZrO}_{3}$ multilayered thin films

Jae Hyuk Jang; Ki Hyun Yoon

Appl. Phys. Lett. 75, 130–132 (1999) https://doi.org/10.1063/1.124256

View articletitled, Electric fatigue properties of sol–gel-derived <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/PbZrO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> multilayered thin films

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DEVICE PHYSICS

Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor

Shiou-Ying Cheng; Wen-Chau Liu; Wen-Lung Chang; Hsi-Jen Pan; Wei-Chou Wang; Jing-Yuh Chen; Shun-Ching Feng; Kuo-Hui Yu

Appl. Phys. Lett. 75, 133–135 (1999) https://doi.org/10.1063/1.124298

View articletitled, Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor

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Low-temperature thermopower in nanostructured silver

X. F. Zhu; H. F. Zhang; J. S. Williams; R. P. Wang; L. D. Zhang; X. J. Wu

Appl. Phys. Lett. 75, 136–138 (1999) https://doi.org/10.1063/1.124299

View articletitled, Low-temperature thermopower in nanostructured silver

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Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface

Kang-Ho Park; Mincheol Shin; Jeong Sook Ha; Wan Soo Yun; Young-Jo Ko

Appl. Phys. Lett. 75, 139–141 (1999) https://doi.org/10.1063/1.124326

View articletitled, Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface

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INTERDISCIPLINARY AND GENERAL PHYSICS

Surface acoustic wave impedance element filters for 5 GHz

S. Lehtonen; J. Koskela; M. M. Salomaa; V. P. Plessky; M. Honkanen; J. Turunen

Appl. Phys. Lett. 75, 142–144 (1999) https://doi.org/10.1063/1.124300

View articletitled, Surface acoustic wave impedance element filters for 5 GHz

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COMMENTS

Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71, 3543 (1997)]

P. A. M. Rodrigues; F. Cerdeira; J. C. Bean

Appl. Phys. Lett. 75, 145–146 (1999) https://doi.org/10.1063/1.124257

View articletitled, Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. <strong>71</strong>, 3543 (1997)]

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ERRATA

Erratum: “Suppressed diffusion of boron and carbon in carbon-rich silicon” [Appl. Phys. Lett. 73, 1682 (1998)]

H. Rücker; B. Heinemann; W. Röpke; R. Kurps; D. Krüger; G. Lippert; H. J. Osten

Appl. Phys. Lett. 75, 147 (1999) https://doi.org/10.1063/1.124301

View articletitled, Erratum: “Suppressed diffusion of boron and carbon in carbon-rich silicon” [Appl. Phys. Lett. <strong>73</strong>, 1682 (1998)]

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