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Volume 74, Issue 9

1 March 1999

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Electro-optic sampling near zero optical transmission point

Zhiping Jiang; F. G. Sun; Q. Chen; X.-C. Zhang

Appl. Phys. Lett. 74, 1191–1193 (1999) https://doi.org/10.1063/1.123495

View articletitled, Electro-optic sampling near zero optical transmission point

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High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm

D. Wu; B. Lane; H. Mohseni; J. Diaz; M. Razeghi

Appl. Phys. Lett. 74, 1194–1196 (1999) https://doi.org/10.1063/1.123496

View articletitled, High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm

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Optical modulation in a resonant tunneling relaxation oscillator

J. M. L. Figueiredo; C. R. Stanley; A. R. Boyd; C. N. Ironside; S. G. McMeekin; A. M. P. Leite

Appl. Phys. Lett. 74, 1197–1199 (1999) https://doi.org/10.1063/1.123497

View articletitled, Optical modulation in a resonant tunneling relaxation oscillator

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Ultrashort laser pulse induced deformation of silver nanoparticles in glass

M. Kaempfe; T. Rainer; K.-J. Berg; G. Seifert; H. Graener

Appl. Phys. Lett. 74, 1200–1202 (1999) https://doi.org/10.1063/1.123498

View articletitled, Ultrashort laser pulse induced deformation of silver nanoparticles in glass

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Silicon-based resonant-cavity-enchanced photodiode with a buried ${SiO}_{2}$ reflector

V. S. Sinnis; M. Seto; G. W. ’t Hooft; Y. Watabe; A. P. Morrison; W. Hoekstra; W. B. de Boer

Appl. Phys. Lett. 74, 1203–1205 (1999) https://doi.org/10.1063/1.123499

View articletitled, Silicon-based resonant-cavity-enchanced photodiode with a buried <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> reflector

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A $200 nm×2 mm$ array of organic light-emitting diodes and their anisotropic electroluminescence

Naotoshi Suganuma; Chihaya Adachi; Toshiki Koyama; Yoshio Taniguchi; Hiroshi Shiraishi

Appl. Phys. Lett. 74, 1206–1208 (1999) https://doi.org/10.1063/1.123500

View articletitled, A <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">200 nm×2 mm</mi></math></span> array of organic light-emitting diodes and their anisotropic electroluminescence

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Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering

E. Dogheche; D. Rémiens; A. Boudrioua; J. C. Loulergue

Appl. Phys. Lett. 74, 1209–1211 (1999) https://doi.org/10.1063/1.123501

View articletitled, Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering

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Self-collimating phenomena in photonic crystals

Hideo Kosaka; Takayuki Kawashima; Akihisa Tomita; Masaya Notomi; Toshiaki Tamamura; Takashi Sato; Shojiro Kawakami

Appl. Phys. Lett. 74, 1212–1214 (1999) https://doi.org/10.1063/1.123502

View articletitled, Self-collimating phenomena in photonic crystals

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Spatial hole burning and multimode generation threshold in quantum-dot lasers

L. V. Asryan; R. A. Suris

Appl. Phys. Lett. 74, 1215–1217 (1999) https://doi.org/10.1063/1.123503

View articletitled, Spatial hole burning and multimode generation threshold in quantum-dot lasers

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Electron paramagnetic resonance of a cation antisite defect in ${ZnGeP}_{2}$

S. D. Setzler; N. C. Giles; L. E. Halliburton; P. G. Schunemann; T. M. Pollak

Appl. Phys. Lett. 74, 1218–1220 (1999) https://doi.org/10.1063/1.123504

View articletitled, Electron paramagnetic resonance of a cation antisite defect in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZnGeP</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span>

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Structure control and characterization of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films by a modified annealing method

G. D. Hu; I. H. Wilson; J. B. Xu; W. Y. Cheung; S. P. Wong; H. K. Wong

Appl. Phys. Lett. 74, 1221–1223 (1999) https://doi.org/10.1063/1.123505

View articletitled, Structure control and characterization of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math></span> thin films by a modified annealing method

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Shape transition of InAs quantum dots by growth at high temperature

Hideaki Saito; Kenichi Nishi; Shigeo Sugou

Appl. Phys. Lett. 74, 1224–1226 (1999) https://doi.org/10.1063/1.123506

View articletitled, Shape transition of InAs quantum dots by growth at high temperature

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Optical properties of GaN pyramids

K. C. Zeng; J. Y. Lin; H. X. Jiang; Wei Yang

Appl. Phys. Lett. 74, 1227–1229 (1999) https://doi.org/10.1063/1.123507

View articletitled, Optical properties of GaN pyramids

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The effects of misfit dislocation distribution and capping layer on excess stress

Zhi Jin; Shuren Yang; Benzhong Wang; Haiyan An; Chunsheng Ma; Shiyong Liu

Appl. Phys. Lett. 74, 1230–1232 (1999) https://doi.org/10.1063/1.123508

View articletitled, The effects of misfit dislocation distribution and capping layer on excess stress

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Variable energy blast modeling of the stress generation associated with laser ablation

S. Siano; R. Pini; R. Salimbeni

Appl. Phys. Lett. 74, 1233–1235 (1999) https://doi.org/10.1063/1.123509

View articletitled, Variable energy blast modeling of the stress generation associated with laser ablation

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Artificial skin to sense mechanical stress by visible light emission

C. N. Xu; T. Watanabe; M. Akiyama; X. G. Zheng

Appl. Phys. Lett. 74, 1236–1238 (1999) https://doi.org/10.1063/1.123510

View articletitled, Artificial skin to sense mechanical stress by visible light emission

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SEMICONDUCTORS

Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature

Max Stellmacher; Jean-Phillipe Schnell; Didier Adam; Julien Nagle

Appl. Phys. Lett. 74, 1239–1241 (1999) https://doi.org/10.1063/1.123511

View articletitled, Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature

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Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

A. Strittmatter; A. Krost; M. Straßburg; V. Türck; D. Bimberg; J. Bläsing; J. Christen

Appl. Phys. Lett. 74, 1242–1244 (1999) https://doi.org/10.1063/1.123512

View articletitled, Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

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Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

B. M. M. McGregor; R. J. P. Lander; P. J. Phillips; E. H. C. Parker; T. E. Whall

Appl. Phys. Lett. 74, 1245–1247 (1999) https://doi.org/10.1063/1.123513

View articletitled, Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

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Comparison of ultralow-energy ion implantation of boron and ${BF}_{2}$ for ultrashallow $p^{+} /n$ junction formation

Jihwan Park; Yun-Jun Huh; Hyunsang Hwang

Appl. Phys. Lett. 74, 1248–1250 (1999) https://doi.org/10.1063/1.123514

View articletitled, Comparison of ultralow-energy ion implantation of boron and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> for ultrashallow <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">/n</mi></math></span> junction formation

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Spin injection into semiconductors

M. Oestreich; J. Hübner; D. Hägele; P. J. Klar; W. Heimbrodt; W. W. Rühle; D. E. Ashenford; B. Lunn

Appl. Phys. Lett. 74, 1251–1253 (1999) https://doi.org/10.1063/1.123515

View articletitled, Spin injection into semiconductors

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Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements

Katsuhiro Uesugi; Nobuki Morooka; Ikuo Suemune

Appl. Phys. Lett. 74, 1254–1256 (1999) https://doi.org/10.1063/1.123516

View articletitled, Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements

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Thermal evolution of impurities in wet chemical silicon oxides

A. B. Gurevich; M. K. Weldon; Y. J. Chabal; R. L. Opila; J. Sapjeta

Appl. Phys. Lett. 74, 1257–1259 (1999) https://doi.org/10.1063/1.123517

View articletitled, Thermal evolution of impurities in wet chemical silicon oxides

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Oxidation of Si beneath thin ${SiO}_{2}$ layers during exposure to ${HBr/O}_{2}$ plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

V. M. Donnelly; F. P. Klemens; T. W. Sorsch; G. L. Timp; F. H. Baumann

Appl. Phys. Lett. 74, 1260–1262 (1999) https://doi.org/10.1063/1.123518

View articletitled, Oxidation of Si beneath thin <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> layers during exposure to <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HBr/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

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Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

C. R. Cho; N. Yarykin; R. A. Brown; O. Kononchuk; G. A. Rozgonyi; R. A. Zuhr

Appl. Phys. Lett. 74, 1263–1265 (1999) https://doi.org/10.1063/1.123519

View articletitled, Evolution of deep-level centers in <em>p</em>-type silicon following ion implantation at 85 K

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High voltage (450 V) GaN Schottky rectifiers

Z. Z. Bandić; P. M. Bridger; E. C. Piquette; T. C. McGill; R. P. Vaudo; V. M. Phanse; J. M. Redwing

Appl. Phys. Lett. 74, 1266–1268 (1999) https://doi.org/10.1063/1.123520

View articletitled, High voltage (450 V) GaN Schottky rectifiers

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Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs

M. Haiml; U. Siegner; F. Morier-Genoud; U. Keller; M. Luysberg; P. Specht; E. R. Weber

Appl. Phys. Lett. 74, 1269–1271 (1999) https://doi.org/10.1063/1.123521

View articletitled, Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs

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Modified Stranski–Krastanov growth in stacked layers of self-assembled islands

O. G. Schmidt; O. Kienzle; Y. Hao; K. Eberl; F. Ernst

Appl. Phys. Lett. 74, 1272–1274 (1999) https://doi.org/10.1063/1.123522

View articletitled, Modified Stranski–Krastanov growth in stacked layers of self-assembled islands

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Low-resistance ohmic contacts to p-type GaN

Jin-Kuo Ho; Charng-Shyang Jong; Chien C. Chiu; Chao-Nien Huang; Chin-Yuen Chen; Kwang-Kuo Shih

Appl. Phys. Lett. 74, 1275–1277 (1999) https://doi.org/10.1063/1.123546

View articletitled, Low-resistance ohmic contacts to <em>p</em>-type GaN

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Controlled spontaneous emissions from current-driven semiconductor microcavity triodes

S. Yamashita; S. Nakamura; S. Kobayashi; T. Ueda; Y. Kadoya; M. Yamanishi

Appl. Phys. Lett. 74, 1278–1280 (1999) https://doi.org/10.1063/1.123523

View articletitled, Controlled spontaneous emissions from current-driven semiconductor microcavity triodes

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Ballistic electron focusing by elliptic reflecting barriers

J. J. Heremans; S. von Molnár; D. D. Awschalom; A. C. Gossard

Appl. Phys. Lett. 74, 1281–1283 (1999) https://doi.org/10.1063/1.123524

View articletitled, Ballistic electron focusing by elliptic reflecting barriers

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Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition

M. Lill; B. Schröder

Appl. Phys. Lett. 74, 1284–1286 (1999) https://doi.org/10.1063/1.123525

View articletitled, Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition

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Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP

Milind R. Gokhale; Jian Wei; Hongsheng Wang; Stephen R. Forrest

Appl. Phys. Lett. 74, 1287–1289 (1999) https://doi.org/10.1063/1.123526

View articletitled, Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP

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Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties

J. A. N. T. Soares; H. Kim; G. Glass; P. Desjardins; J. E. Greene

Appl. Phys. Lett. 74, 1290–1292 (1999) https://doi.org/10.1063/1.123527

View articletitled, Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties

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A memory cell with single-electron and metal-oxide-semiconductor transistor integration

Zahid A. K. Durrani; Andrew C. Irvine; Haroon Ahmed; Kazuo Nakazato

Appl. Phys. Lett. 74, 1293–1295 (1999) https://doi.org/10.1063/1.123528

View articletitled, A memory cell with single-electron and metal-oxide-semiconductor transistor integration

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The effect of disorder on excited state dynamics in organic molecular films

A. J. Mäkinen; S. Xu; Z. Zhang; S. J. Diol; Yongli Gao; M. G. Mason; A. A. Muenter; D. A. Mantell; A. R. Melnyk

Appl. Phys. Lett. 74, 1296–1298 (1999) https://doi.org/10.1063/1.123529

View articletitled, The effect of disorder on excited state dynamics in organic molecular films

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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

V. C. Venezia; T. E. Haynes; Aditya Agarwal; L. Pelaz; H.-J. Gossmann; D. C. Jacobson; D. J. Eaglesham

Appl. Phys. Lett. 74, 1299–1301 (1999) https://doi.org/10.1063/1.123530

View articletitled, Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

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MAGNETISM AND SUPERCONDUCTIVITY

High- $T_{c}$ directly coupled direct current SQUID gradiometer with flip-chip flux transformer

Y. J. Tian; S. Linzen; F. Schmidl; L. Dörrer; R. Weidl; P. Seidel

Appl. Phys. Lett. 74, 1302–1304 (1999) https://doi.org/10.1063/1.123531

View articletitled, High-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math></span> directly coupled direct current SQUID gradiometer with flip-chip flux transformer

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Exchange biasing in ferromagnetic amorphous wires: A controllable micromagnetic configuration

J. J. Freijo; A. Hernando; M. Vázquez; A. Méndez; V. R. Ramanan

Appl. Phys. Lett. 74, 1305–1307 (1999) https://doi.org/10.1063/1.123532

View articletitled, Exchange biasing in ferromagnetic amorphous wires: A controllable micromagnetic configuration

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Measuring the gigahertz response of recording heads with the magnetic force microscope

Roger Proksch; Peter Neilson; Shane Austvold; J. J. Schmidt

Appl. Phys. Lett. 74, 1308–1310 (1999) https://doi.org/10.1063/1.123533

View articletitled, Measuring the gigahertz response of recording heads with the magnetic force microscope

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Magnetic phase diagram of ultrathin Co/Si(111) film studied by surface magneto-optic Kerr effect

Jyh-Shen Tsay; Yeong-Der Yao

Appl. Phys. Lett. 74, 1311–1313 (1999) https://doi.org/10.1063/1.123534

View articletitled, Magnetic phase diagram of ultrathin Co/Si(111) film studied by surface magneto-optic Kerr effect

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Increasing the exchange-bias field of ${Ni}_{0.5} {Co}_{0.5} O$ films by microstructural control

Dinesh Martien; Kentaro Takano; A. E. Berkowitz; David J. Smith

Appl. Phys. Lett. 74, 1314–1316 (1999) https://doi.org/10.1063/1.123535

View articletitled, Increasing the exchange-bias field of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math></span> films by microstructural control

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Observation of supercurrent distribution in ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thin films using THz radiation excited with femtosecond laser pulses

S. Shikii; T. Kondo; M. Yamashita; M. Tonouchi; M. Hangyo; M. Tani; K. Sakai

Appl. Phys. Lett. 74, 1317–1319 (1999) https://doi.org/10.1063/1.123536

View articletitled, Observation of supercurrent distribution in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7−δ</mi></mrow></msub></math></span> thin films using THz radiation excited with femtosecond laser pulses

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Contributions of individual Fe sites to magnetocrystalline anisotropy of $Y_{2} {Fe}_{17−x} {Ga}_{x}$ compounds

Zhao-hua Cheng; Bao-gen Shen; Fang-wei Wang; H. Kronmüller

Appl. Phys. Lett. 74, 1320–1322 (1999) https://doi.org/10.1063/1.123537

View articletitled, Contributions of individual Fe sites to magnetocrystalline anisotropy of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>17−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi>x</mi></mrow></msub></math></span> compounds

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Superconducting transport properties of 2.2-GeV Au-ion irradiated c-axis twist ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+δ}$ bicrystals

Qiang Li; Y. N. Tsay; M. Suenaga; G. Wirth; G. D. Gu; N. Koshizuka

Appl. Phys. Lett. 74, 1323–1325 (1999) https://doi.org/10.1063/1.123538

View articletitled, Superconducting transport properties of 2.2-GeV Au-ion irradiated <em>c</em>-axis twist <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">8+δ</mi></mrow></msub></math></span> bicrystals

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DIELECTRICS AND FERROELECTRICITY

Injection-controlled size effect on switching of ferroelectric thin films

A. K. Tagantsev; I. A. Stolichnov

Appl. Phys. Lett. 74, 1326–1328 (1999) https://doi.org/10.1063/1.123539

View articletitled, Injection-controlled size effect on switching of ferroelectric thin films

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DEVICE PHYSICS

Ultrahigh-density atomic force microscopy data storage with erase capability

G. Binnig; M. Despont; U. Drechsler; W. Häberle; M. Lutwyche; P. Vettiger; H. J. Mamin; B. W. Chui; T. W. Kenny

Appl. Phys. Lett. 74, 1329–1331 (1999) https://doi.org/10.1063/1.123540

View articletitled, Ultrahigh-density atomic force microscopy data storage with erase capability

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Microscale lithography via channel stamping: Relationships between capillarity, channel filling, and debonding

P. M. Moran; F. F. Lange

Appl. Phys. Lett. 74, 1332–1334 (1999) https://doi.org/10.1063/1.123541

View articletitled, Microscale lithography via channel stamping: Relationships between capillarity, channel filling, and debonding

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A four-color quantum well infrared photodetector

M. Z. Tidrow; Xudong Jiang; Sheng S. Li; K. Bacher

Appl. Phys. Lett. 74, 1335–1337 (1999) https://doi.org/10.1063/1.123542

View articletitled, A four-color quantum well infrared photodetector

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High-density three-dimensional optical data storage in a stacked compact disk format with two-photon writing and single photon readout

Haridas E. Pudavar; Mukesh P. Joshi; Paras N. Prasad; Bruce A. Reinhardt

Appl. Phys. Lett. 74, 1338–1340 (1999) https://doi.org/10.1063/1.123543

View articletitled, High-density three-dimensional optical data storage in a stacked compact disk format with two-photon writing and single photon readout

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INTERDISCIPLINARY AND GENERAL PHYSICS

Molecular dynamics simulation study of the fluence dependence of particle yield and plume composition in laser desorption and ablation of organic solids

Leonid V. Zhigilei; Barbara J. Garrison

Appl. Phys. Lett. 74, 1341–1343 (1999) https://doi.org/10.1063/1.123544

View articletitled, Molecular dynamics simulation study of the fluence dependence of particle yield and plume composition in laser desorption and ablation of organic solids

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Transient grating measurements of picosecond acoustic pulses in metal films

Timothy F. Crimmins; A. A. Maznev; Keith A. Nelson

Appl. Phys. Lett. 74, 1344–1346 (1999) https://doi.org/10.1063/1.123545

View articletitled, Transient grating measurements of picosecond acoustic pulses in metal films

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ERRATA

Erratum: “An application of the apertureless scanning near-field optical microscopy: Imaging a GaAlAs laser diode in operation” [Appl. Phys. Lett. 73, 3333 (1998)]

R. Bachelot; G. Wurtz; P. Royer

Appl. Phys. Lett. 74, 1347 (1999) https://doi.org/10.1063/1.123547

View articletitled, Erratum: “An application of the apertureless scanning near-field optical microscopy: Imaging a GaAlAs laser diode in operation” [Appl. Phys. Lett. <strong>73</strong>, 3333 (1998)]

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Online ISSN 1077-3118
Print ISSN 0003-6951

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