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Volume 74, Issue 4

25 January 1999

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
CONDENSED MATTER: STRUCTURAL, MECHANICAL, THERMAL, AND ATOMIC TRANSPORT PROPERTIES
SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
COMMENTS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers

M. Kamp; J. Hofmann; A. Forchel; F. Schäfer; J. P. Reithmaier

Appl. Phys. Lett. 74, 483–485 (1999) https://doi.org/10.1063/1.123164

View articletitled, Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers

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Experimental demonstration of photonic crystal based waveguides

B. Temelkuran; E. Ozbay

Appl. Phys. Lett. 74, 486–488 (1999) https://doi.org/10.1063/1.123163

View articletitled, Experimental demonstration of photonic crystal based waveguides

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Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers

Joachim Piprek; Patrick Abraham; John E. Bowers

Appl. Phys. Lett. 74, 489–491 (1999) https://doi.org/10.1063/1.123165

View articletitled, Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers

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Waveguide fabrication and high-speed in-line intensity modulation in 4-N,N-4^′-dimethylamino-4^′-N^′-methyl-stilbazolium tosylate

F. Pan; K. McCallion; M. Chiappetta

Appl. Phys. Lett. 74, 492–494 (1999) https://doi.org/10.1063/1.123956

View articletitled, Waveguide fabrication and high-speed in-line intensity modulation in 4-<em>N</em>,<em>N</em>-4<sup>′</sup>-dimethylamino-4<sup>′</sup>-<em>N</em><sup>′</sup>-methyl-stilbazolium tosylate

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Thickness dependence of second-harmonic generation in thin films fabricated from ionically self-assembled monolayers

J. R. Heflin; C. Figura; D. Marciu; Y. Liu; R. O. Claus

Appl. Phys. Lett. 74, 495–497 (1999) https://doi.org/10.1063/1.123166

View articletitled, Thickness dependence of second-harmonic generation in thin films fabricated from ionically self-assembled monolayers

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CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

S. V. Ivanov; A. A. Toropov; S. V. Sorokin; T. V. Shubina; I. V. Sedova; A. A. Sitnikova; P. S. Kop’ev; Zh. I. Alferov; H.-J. Lugauer; G. Reuscher; M. Keim; F. Fischer; A. Waag; G. Landwehr

Appl. Phys. Lett. 74, 498–500 (1999) https://doi.org/10.1063/1.123167

View articletitled, CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

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Near-field photolithography with a solid immersion lens

L. P. Ghislain; V. B. Elings; K. B. Crozier; S. R. Manalis; S. C. Minne; K. Wilder; G. S. Kino; C. F. Quate

Appl. Phys. Lett. 74, 501–503 (1999) https://doi.org/10.1063/1.123168

View articletitled, Near-field photolithography with a solid immersion lens

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Active reflection via a phase-insensitive quadratic nonlinear interaction within a microcavity

Crina Cojocaru; Jordi Martorell; R. Vilaseca; J. Trull; Eugenio Fazio

Appl. Phys. Lett. 74, 504–506 (1999) https://doi.org/10.1063/1.123169

View articletitled, Active reflection via a phase-insensitive quadratic nonlinear interaction within a microcavity

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High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire

M. Wraback; H. Shen; S. Liang; C. R. Gorla; Y. Lu

Appl. Phys. Lett. 74, 507–509 (1999) https://doi.org/10.1063/1.124223

View articletitled, High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on <em>R</em>-plane sapphire

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Generation of dark pulse trains from continuous-wave light using cross-phase modulation in optical fibers

Wen-hua Cao; Shenping Li; Kam-tai Chan

Appl. Phys. Lett. 74, 510–512 (1999) https://doi.org/10.1063/1.123170

View articletitled, Generation of dark pulse trains from continuous-wave light using cross-phase modulation in optical fibers

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CONDENSED MATTER: STRUCTURAL, MECHANICAL, THERMAL, AND ATOMIC TRANSPORT PROPERTIES

Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN

R. A. Mair; J. Li; S. K. Duan; J. Y. Lin; H. X. Jiang

Appl. Phys. Lett. 74, 513–515 (1999) https://doi.org/10.1063/1.123171

View articletitled, Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN

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Hydrogen-induced reduction of axial stress in optical fiber cores

Nguyen Hong Ky; H. G. Limberger; R. P. Salathé; F. Cochet; L. Dong

Appl. Phys. Lett. 74, 516–518 (1999) https://doi.org/10.1063/1.123172

View articletitled, Hydrogen-induced reduction of axial stress in optical fiber cores

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Optically induced surface relief phenomena in azobenzene polymers

N. C. R. Holme; L. Nikolova; S. Hvilsted; P. H. Rasmussen; R. H. Berg; P. S. Ramanujam

Appl. Phys. Lett. 74, 519–521 (1999) https://doi.org/10.1063/1.123173

View articletitled, Optically induced surface relief phenomena in azobenzene polymers

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Mechanism for interfacial adhesion strength of an ion beam mixed Cu/polyimide with a thin buffer layer

G. S. Chang; K. H. Chae; C. N. Whang; E. Z. Kurmaev; D. A. Zatsepin; R. P. Winarski; D. L. Ederer; A. Moewes; Y. P. Lee

Appl. Phys. Lett. 74, 522–524 (1999) https://doi.org/10.1063/1.123174

View articletitled, Mechanism for interfacial adhesion strength of an ion beam mixed Cu/polyimide with a thin buffer layer

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Fabrication of nano-structural arrays by channeling pulsed atomic beams through pulsed-laser standing-waves under off-resonant condition

X. D. Zhu

Appl. Phys. Lett. 74, 525–527 (1999) https://doi.org/10.1063/1.123175

View articletitled, Fabrication of nano-structural arrays by channeling pulsed atomic beams through pulsed-laser standing-waves under off-resonant condition

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The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si

Y. H. Wu; W. J. Chen; Albert Chin; C. Tsai

Appl. Phys. Lett. 74, 528–530 (1999) https://doi.org/10.1063/1.123176

View articletitled, The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si

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Metastable surface ordering in strain relaxed ${Si}_{0.5} {Ge}_{0.5}$ epitaxial layers grown at high temperature

H. Reichert; S. C. Moss; P. Imperatori; K. Evans-Lutterodt

Appl. Phys. Lett. 74, 531–533 (1999) https://doi.org/10.1063/1.123177

View articletitled, Metastable surface ordering in strain relaxed <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub></math></span> epitaxial layers grown at high temperature

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Asymmetric electro-optical response in a liquid crystal cell containing a layer of amorphous tungsten trioxide

G. Strangi; D. E. Lucchetta; E. Cazzanelli; N. Scaramuzza; C. Versacé; R. Bartolino

Appl. Phys. Lett. 74, 534–536 (1999) https://doi.org/10.1063/1.123178

View articletitled, Asymmetric electro-optical response in a liquid crystal cell containing a layer of amorphous tungsten trioxide

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1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon

M. Stepikhova; L. Palmetshofer; W. Jantsch; H. J. von Bardeleben; N. V. Gaponenko

Appl. Phys. Lett. 74, 537–539 (1999) https://doi.org/10.1063/1.123179

View articletitled, 1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon

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Electrical and optical properties of Ge–implanted 4H–SiC

G. Katulka; C. Guedj; J. Kolodzey; R. G. Wilson; C. Swann; M. W. Tsao; J. Rabolt

Appl. Phys. Lett. 74, 540–542 (1999) https://doi.org/10.1063/1.123186

View articletitled, Electrical and optical properties of Ge–implanted 4H–SiC

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SEMICONDUCTORS

Optical characterization of the “E2” deep level in GaN

P. Hacke; P. Ramvall; S. Tanaka; Y. Aoyagi; A. Kuramata; K. Horino; H. Munekata

Appl. Phys. Lett. 74, 543–545 (1999) https://doi.org/10.1063/1.123180

View articletitled, Optical characterization of the “E2” deep level in GaN

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Electronic states at aluminum nitride $(0001)-1×1$ surfaces

C. I. Wu; A. Kahn

Appl. Phys. Lett. 74, 546–548 (1999) https://doi.org/10.1063/1.123140

View articletitled, Electronic states at aluminum nitride <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0001)-1×1</mtext></math></span> surfaces

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Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering

M. Kuball; F. Demangeot; J. Frandon; M. A. Renucci; H. Sands; D. N. Batchelder; S. Clur; O. Briot

Appl. Phys. Lett. 74, 549–551 (1999) https://doi.org/10.1063/1.123141

View articletitled, Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering

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Annealing conditions for intrinsic CdTe

M. A. Berding

Appl. Phys. Lett. 74, 552–554 (1999) https://doi.org/10.1063/1.123142

View articletitled, Annealing conditions for intrinsic CdTe

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Single-electron capacitance spectroscopy of vertical quantum dots using a single-electron transistor

M. Koltonyuk; D. Berman; N. B. Zhitenev; R. C. Ashoori; L. N. Pfeiffer; K. W. West

Appl. Phys. Lett. 74, 555–557 (1999) https://doi.org/10.1063/1.123143

View articletitled, Single-electron capacitance spectroscopy of vertical quantum dots using a single-electron transistor

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Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an ${In}_{0.02} {Ga}_{0.98} N$ active layer

Yukio Narukawa; Shin Saijou; Yoichi Kawakami; Shigeo Fujita; Takashi Mukai; Shuji Nakamura

Appl. Phys. Lett. 74, 558–560 (1999) https://doi.org/10.1063/1.123144

View articletitled, Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.02</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.98</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> active layer

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Schottky energy barriers and charge injection in metal/Alq/metal structures

I. H. Campbell; D. L. Smith

Appl. Phys. Lett. 74, 561–563 (1999) https://doi.org/10.1063/1.123145

View articletitled, Schottky energy barriers and charge injection in metal/Alq/metal structures

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Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

M. Colocci; A. Vinattieri; L. Lippi; F. Bogani; M. Rosa-Clot; S. Taddei; A. Bosacchi; S. Franchi; P. Frigeri

Appl. Phys. Lett. 74, 564–566 (1999) https://doi.org/10.1063/1.123146

View articletitled, Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

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Spontaneous self-embedding of three-dimensional SiGe islands

E. Mateeva; P. Sutter; M. G. Lagally

Appl. Phys. Lett. 74, 567–569 (1999) https://doi.org/10.1063/1.123147

View articletitled, Spontaneous self-embedding of three-dimensional SiGe islands

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Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates

P. Kung; D. Walker; M. Hamilton; J. Diaz; M. Razeghi

Appl. Phys. Lett. 74, 570–572 (1999) https://doi.org/10.1063/1.123148

View articletitled, Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates

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Piezoelectric polarization associated with dislocations in wurtzite GaN

Changchun Shi; Peter M. Asbeck; Edward T. Yu

Appl. Phys. Lett. 74, 573–575 (1999) https://doi.org/10.1063/1.123149

View articletitled, Piezoelectric polarization associated with dislocations in wurtzite GaN

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Electrically active defect centers induced by ${Ga}^{+}$ focused ion beam irradiation of GaAs(100)

S. J. Brown; P. D. Rose; G. A. C. Jones; E. H. Linfield; D. A. Ritchie

Appl. Phys. Lett. 74, 576–578 (1999) https://doi.org/10.1063/1.123150

View articletitled, Electrically active defect centers induced by <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math></span> focused ion beam irradiation of GaAs(100)

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Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures

M. A. Sadeghzadeh; C. P. Parry; P. J. Phillips; E. H. C. Parker; T. E. Whall

Appl. Phys. Lett. 74, 579–581 (1999) https://doi.org/10.1063/1.123151

View articletitled, Issues on the molecular-beam epitaxial growth of <em>p</em>-SiGe inverted-modulation-doped structures

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Issues in general quantum transport with complex potentials

D. K. Ferry; J. R. Barker

Appl. Phys. Lett. 74, 582–584 (1999) https://doi.org/10.1063/1.123152

View articletitled, Issues in general quantum transport with complex potentials

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An embedded quantum wire model of dielectric breakdown

D. Z.-Y. Ting

Appl. Phys. Lett. 74, 585–587 (1999) https://doi.org/10.1063/1.123153

View articletitled, An embedded quantum wire model of dielectric breakdown

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MAGNETISM AND SUPERCONDUCTIVITY

Fabrication of nanomagnet arrays by shadow deposition on self-organized semiconductor substrates

C. Teichert; J. Barthel; H. P. Oepen; J. Kirschner

Appl. Phys. Lett. 74, 588–590 (1999) https://doi.org/10.1063/1.123154

View articletitled, Fabrication of nanomagnet arrays by shadow deposition on self-organized semiconductor substrates

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Isomagnetic reversal in sintered NdFeB

D. C. Crew; P. G. McCormick; R. Street

Appl. Phys. Lett. 74, 591–593 (1999) https://doi.org/10.1063/1.123155

View articletitled, Isomagnetic reversal in sintered NdFeB

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Improvement in spin-wave resonance characteristics of epitaxial barium-ferrite thin films by using an aluminum-doped strontium-ferrite buffer layer

S. R. Shinde; S. E. Lofland; C. S. Ganpule; S. M. Bhagat; S. B. Ogale; R. Ramesh; T. Venkatesan

Appl. Phys. Lett. 74, 594–596 (1999) https://doi.org/10.1063/1.123156

View articletitled, Improvement in spin-wave resonance characteristics of epitaxial barium-ferrite thin films by using an aluminum-doped strontium-ferrite buffer layer

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Microstructure and magnetic properties of ${Sm}_{2} {(Fe, Si)}_{17} C_{x} /α- Fe$ nanocomposite magnets prepared under high pressure

X. Y. Zhang; J. W. Zhang; W. K. Wang; W. Yu; J. H. Zhao; Y. F. Xu

Appl. Phys. Lett. 74, 597–599 (1999) https://doi.org/10.1063/1.123157

View articletitled, Microstructure and magnetic properties of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sm</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">(Fe, Si)</mi><mrow><mi mathvariant="normal">17</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/α-</mi><mi mathvariant="normal" xmlns="">Fe</mi></math></span> nanocomposite magnets prepared under high pressure

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Electrical noise in hysteretic ferromagnet–insulator–ferromagnet tunnel junctions

E. R. Nowak; M. B. Weissman; S. S. P. Parkin

Appl. Phys. Lett. 74, 600–602 (1999) https://doi.org/10.1063/1.123158

View articletitled, Electrical noise in hysteretic ferromagnet–insulator–ferromagnet tunnel junctions

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DIELECTRICS AND FERROELECTRICITY

${BaBi}_{4} {Ti}_{4} O_{15}$ ferroelectric thin films grown by pulsed laser deposition

K. M. Satyalakshmi; M. Alexe; A. Pignolet; N. D. Zakharov; C. Harnagea; S. Senz; D. Hesse

Appl. Phys. Lett. 74, 603–605 (1999) https://doi.org/10.1063/1.123159

View articletitled, <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaBi</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">15</mi></mrow></msub></math></span> ferroelectric thin films grown by pulsed laser deposition

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Low dielectric constant Parylene-F-like films for intermetal dielectric applications

Bengi Hanyaloglu; Atilla Aydinli; Michael Oye; Eray S. Aydi

Appl. Phys. Lett. 74, 606–608 (1999) https://doi.org/10.1063/1.123160

View articletitled, Low dielectric constant Parylene-F-like films for intermetal dielectric applications

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DEVICE PHYSICS

Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode

X. Zhou; J. He; L. S. Liao; M. Lu; Z. H. Xiong; X. M. Ding; X. Y. Hou; F. G. Tao; C. E. Zhou; S. T. Lee

Appl. Phys. Lett. 74, 609–611 (1999) https://doi.org/10.1063/1.123161

View articletitled, Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a <em>p</em>-type doped silicon anode

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65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3–1.55 μm wavelength regime

St. Kollakowski; A. Strittmatter; E. Dröge; E. H. Böttcher; D. Bimberg; O. Reimann; K. Janiak

Appl. Phys. Lett. 74, 612–614 (1999) https://doi.org/10.1063/1.123181

View articletitled, 65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3–1.55 μm wavelength regime

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A thin-film diamond phototransistor

Stuart P. Lansley; Hui Jin Looi; Yanyang Wang; Michael D. Whitfield; Richard B. Jackman

Appl. Phys. Lett. 74, 615–617 (1999) https://doi.org/10.1063/1.123182

View articletitled, A thin-film diamond phototransistor

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INTERDISCIPLINARY AND GENERAL PHYSICS

Microscopic observation of weak electric fields

W. Laı̈; A. Degiovanni; R. Morin

Appl. Phys. Lett. 74, 618–620 (1999) https://doi.org/10.1063/1.123183

View articletitled, Microscopic observation of weak electric fields

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Grain boundary barrier breakdown in niobium donor doped strontium titanate using in situ electron holography

Kevin D. Johnson; Vinayak P. Dravid

Appl. Phys. Lett. 74, 621–623 (1999) https://doi.org/10.1063/1.123184

View articletitled, Grain boundary barrier breakdown in niobium donor doped strontium titanate using <em>in situ</em> electron holography

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COMMENTS

Comment on “The larger polar Kerr rotation of Fe–Si alloy films and their magnetic properties” [Appl. Phys. Lett. 72, 1383 (1998)]

R. Krishnan

Appl. Phys. Lett. 74, 624 (1999) https://doi.org/10.1063/1.123187

View articletitled, Comment on “The larger polar Kerr rotation of Fe–Si alloy films and their magnetic properties” [Appl. Phys. Lett. <strong>72</strong>, 1383 (1998)]

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Addendum: “Midinfrared vertical-cavity surface-emitting laser” [Appl. Phys. Lett. 71, 3483 (1997)]

W. W. Bewley; C. L. Felix; I. Vurgaftman; L. J. Olafsen; E. H. Aifer; J. R. Meyer

Appl. Phys. Lett. 74, 625–627 (1999) https://doi.org/10.1063/1.123185

View articletitled, Addendum: “Midinfrared vertical-cavity surface-emitting laser” [Appl. Phys. Lett. <strong>71</strong>, 3483 (1997)]

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ERRATA

Errata: “Midinfrared vertical-cavity surface-emitting laser” [Appl. Phys. Lett. 71, 3483 (1997)] “High-temperature type-II superlattice diode laser at λ=2.9 μm” [Appl. Phys. Lett. 71, 3607 (1997)] “Near-room-temperature midinfrared interband cascade laser” [Appl. Phys. Lett. 72, 2370 (1998)]

C. L. Felix; W. W. Bewley; I. Vurgaftman; J. R. Meyer; L. Goldberg; E. H. Aifer; L. J. Olafsen; D. H. Chow; E. Selvig; C.-H. Lin; S. J. Murry; D. Zhang; S. S. Pei

Appl. Phys. Lett. 74, 628–629 (1999) https://doi.org/10.1063/1.123188

View articletitled, Errata: “Midinfrared vertical-cavity surface-emitting laser” [Appl. Phys. Lett. <strong>71</strong>, 3483 (1997)] “High-temperature type-II superlattice diode laser at λ=2.9 μm” [Appl. Phys. Lett. <strong>71</strong>, 3607 (1997)] “Near-room-temperature midinfrared interband cascade laser” [Appl. Phys. Lett. <strong>72</strong>, 2370 (1998)]

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