Skip to Main Content

Close

Publishers
Publications
Special Topics
Authors
Librarians
About

header search

search input Search input auto suggest

filter your search

Search

Advanced Search |Citation Search

Menu

Home
Browse
Collections
Publish With Us
About

Skip Nav Destination

Issues

Select Decade

Select Year

Issue

Volume 74, Issue 3

18 January 1999

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
PLASMAS AND ELECTRICAL DISCHARGES
CONDENSED MATTER: STRUCTURAL, MECHANICAL, THERMAL, AND ATOMIC TRANSPORT PROPERTIES
SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
APPLIED BIOPHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS
ERRATA

LASERS, OPTICS, AND OPTOELECTRONICS

Visible light emission from dyes excited by simultaneous absorption of two different frequency beams of light

Alexandra Rapaport; Karine Ayrault; Eyitope St. Matthew-Daniel; Michael Bass

Appl. Phys. Lett. 74, 329–331 (1999) https://doi.org/10.1063/1.123061

View articletitled, Visible light emission from dyes excited by simultaneous absorption of two different frequency beams of light

Open the PDF for in another window

Excited-state absorption and optical-limiting properties of organometallic fullerene– $C_{60}$ derivatives

Yinglin Song; Guangyu Fang; Yuxiao Wang; Shutian Liu; Chunfei Li; Licheng Song; Yinghuai Zhu; Qingmei Hu

Appl. Phys. Lett. 74, 332–334 (1999) https://doi.org/10.1063/1.123062

View articletitled, Excited-state absorption and optical-limiting properties of organometallic fullerene–<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">60</mi></mrow></msub></math></span> derivatives

Open the PDF for in another window

PLASMAS AND ELECTRICAL DISCHARGES

Demonstration of microwave generation by a ferroelectric-cathode tube

R. Drori; M. Einat; D. Shur; E. Jerby; G. Rosenman; R. Advani; R. J. Temkin; C. Pralong

Appl. Phys. Lett. 74, 335–337 (1999) https://doi.org/10.1063/1.123063

View articletitled, Demonstration of microwave generation by a ferroelectric-cathode tube

Open the PDF for in another window

Tailoring of electron energy distributions in low-pressure inductive discharges

F. A. Haas; N. St. J. Braithwaite

Appl. Phys. Lett. 74, 338–340 (1999) https://doi.org/10.1063/1.123064

View articletitled, Tailoring of electron energy distributions in low-pressure inductive discharges

Open the PDF for in another window

CONDENSED MATTER: STRUCTURAL, MECHANICAL, THERMAL, AND ATOMIC TRANSPORT PROPERTIES

Band gap energy in nanocrystalline ${ZrO}_{2} :16%Y$ thin films

Igor Kosacki; Vladimir Petrovsky; Harlan U. Anderson

Appl. Phys. Lett. 74, 341–343 (1999) https://doi.org/10.1063/1.123065

View articletitled, Band gap energy in nanocrystalline <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">:16%Y</mi></math></span> thin films

Open the PDF for in another window

High birefringence and wide nematic range bis-tolane liquid crystals

Shin-Tson Wu; C.-S. Hsu; K.-F. Shyu

Appl. Phys. Lett. 74, 344–346 (1999) https://doi.org/10.1063/1.123066

View articletitled, High birefringence and wide nematic range bis-tolane liquid crystals

Open the PDF for in another window

Influence of dynamical scattering in crystalline poly(vinylidene fluoride-trifluoroethylene) copolymers

C. N. Borca; Jaewu Choi; Shireen Adenwalla; Stephen Ducharme; P. A. Dowben; Lee Robertson; V. M. Fridkin; S. P. Palto; N. Petukhova

Appl. Phys. Lett. 74, 347–349 (1999) https://doi.org/10.1063/1.123067

View articletitled, Influence of dynamical scattering in crystalline poly(vinylidene fluoride-trifluoroethylene) copolymers

Open the PDF for in another window

Sixfold-coordinated carbon as a postdiamond phase

T. Sekine

Appl. Phys. Lett. 74, 350–352 (1999) https://doi.org/10.1063/1.123068

View articletitled, Sixfold-coordinated carbon as a postdiamond phase

Open the PDF for in another window

Direct evidence of micropipe-related pure superscrew dislocations in SiC

X. R. Huang; M. Dudley; W. M. Vetter; W. Huang; S. Wang; C. H. Carter, Jr.

Appl. Phys. Lett. 74, 353–355 (1999) https://doi.org/10.1063/1.123069

View articletitled, Direct evidence of micropipe-related pure superscrew dislocations in SiC

Open the PDF for in another window

Stress evolution during metalorganic chemical vapor deposition of GaN

S. Hearne; E. Chason; J. Han; J. A. Floro; J. Figiel; J. Hunter; H. Amano; I. S. T. Tsong

Appl. Phys. Lett. 74, 356–358 (1999) https://doi.org/10.1063/1.123070

View articletitled, Stress evolution during metalorganic chemical vapor deposition of GaN

Open the PDF for in another window

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

F. Bertram; T. Riemann; J. Christen; A. Kaschner; A. Hoffmann; C. Thomsen; K. Hiramatsu; T. Shibata; N. Sawaki

Appl. Phys. Lett. 74, 359–361 (1999) https://doi.org/10.1063/1.123071

View articletitled, Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

Open the PDF for in another window

Structural properties and Raman modes of zinc blende InN epitaxial layers

A. Tabata; A. P. Lima; L. K. Teles; L. M. R. Scolfaro; J. R. Leite; V. Lemos; B. Schöttker; T. Frey; D. Schikora; K. Lischka

Appl. Phys. Lett. 74, 362–364 (1999) https://doi.org/10.1063/1.123072

View articletitled, Structural properties and Raman modes of zinc blende InN epitaxial layers

Open the PDF for in another window

Elastic strain in ${In}_{0.18} {Ga}_{0.82} N$ layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

M. F. Wu; A. Vantomme; S. M. Hogg; G. Langouche; W. Van der Stricht; K. Jacobs; I. Moerman

Appl. Phys. Lett. 74, 365–367 (1999) https://doi.org/10.1063/1.123032

View articletitled, Elastic strain in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.18</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.82</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math></span> layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

Open the PDF for in another window

Enhanced electro-optic poling in guest–host systems using conductive polymer-based cladding layers

James P. Drummond; Stephen J. Clarson; John S. Zetts; F. Kenneth Hopkins; Stephen J. Caracci

Appl. Phys. Lett. 74, 368–370 (1999) https://doi.org/10.1063/1.123073

View articletitled, Enhanced electro-optic poling in guest–host systems using conductive polymer-based cladding layers

Open the PDF for in another window

Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

Kimon C. Palinginis; Yoram Lubianiker; J. David Cohen; Adelina Ilie; Britta Kleinsorge; William I. Milne

Appl. Phys. Lett. 74, 371–373 (1999) https://doi.org/10.1063/1.123074

View articletitled, Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

Open the PDF for in another window

“Compliant” twist-bonded GaAs substrates: The potential role of pinholes

P. Kopperschmidt; St. Senz; R. Scholz; U. Gösele

Appl. Phys. Lett. 74, 374–376 (1999) https://doi.org/10.1063/1.123075

View articletitled, “Compliant” twist-bonded GaAs substrates: The potential role of pinholes

Open the PDF for in another window

Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation

Shuji Komuro; Tooru Katsumata; Takitaro Morikawa; Xinwei Zhao; Hideo Isshiki; Yoshinobu Aoyagi

Appl. Phys. Lett. 74, 377–379 (1999) https://doi.org/10.1063/1.123076

View articletitled, Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation

Open the PDF for in another window

Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature

T. W. Kim; H. C. Bae; H. L. Park

Appl. Phys. Lett. 74, 380–382 (1999) https://doi.org/10.1063/1.123077

View articletitled, Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature

Open the PDF for in another window

Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

K. Tachibana; T. Someya; Y. Arakawa

Appl. Phys. Lett. 74, 383–385 (1999) https://doi.org/10.1063/1.123078

View articletitled, Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

Open the PDF for in another window

Ultraviolet emission of silicon quantum tips

W. H. Zheng; Jian-bai Xia; S. D. Lam; K. W. Cheah; M. R. Rakhshandehroo; S. W. Pang

Appl. Phys. Lett. 74, 386–388 (1999) https://doi.org/10.1063/1.123079

View articletitled, Ultraviolet emission of silicon quantum tips

Open the PDF for in another window

Strong- and nondegrading-luminescent porous silicon prepared by hydrothermal etching

Xin Jian Li; De Liang Zhu; Qian Wang Chen; Yu Heng Zhang

Appl. Phys. Lett. 74, 389–391 (1999) https://doi.org/10.1063/1.123080

View articletitled, Strong- and nondegrading-luminescent porous silicon prepared by hydrothermal etching

Open the PDF for in another window

The contribution of vacancies to carbon out-diffusion in silicon

R. F. Scholz; P. Werner; U. Gösele; T. Y. Tan

Appl. Phys. Lett. 74, 392–394 (1999) https://doi.org/10.1063/1.123081

View articletitled, The contribution of vacancies to carbon out-diffusion in silicon

Open the PDF for in another window

Experimental observation of two-dimensional electron gas in the CdS quantum wells of CdS/ZnSe heterostructures

V. Kažukauskas; M. Grün; St. Petillon; A. Storzum; C. Klingshirn

Appl. Phys. Lett. 74, 395–397 (1999) https://doi.org/10.1063/1.123042

View articletitled, Experimental observation of two-dimensional electron gas in the CdS quantum wells of CdS/ZnSe heterostructures

Open the PDF for in another window

SEMICONDUCTORS

Magnetic and transport properties of III–V based magnetic semiconductor (GaMn)As: Growth condition dependence

Hiromasa Shimizu; Toshiaki Hayashi; Tatau Nishinaga; Masaaki Tanaka

Appl. Phys. Lett. 74, 398–400 (1999) https://doi.org/10.1063/1.123082

View articletitled, Magnetic and transport properties of III–V based magnetic semiconductor (GaMn)As: Growth condition dependence

Open the PDF for in another window

Intraband absorption in Ge/Si self-assembled quantum dots

P. Boucaud; V. Le Thanh; S. Sauvage; D. Débarre; D. Bouchier

Appl. Phys. Lett. 74, 401–403 (1999) https://doi.org/10.1063/1.123083

View articletitled, Intraband absorption in Ge/Si self-assembled quantum dots

Open the PDF for in another window

Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes

D. P. Bour; M. Kneissl; L. T. Romano; R. M. Donaldson; C. J. Dunnrowicz; N. M. Johnson; G. A. Evans

Appl. Phys. Lett. 74, 404–406 (1999) https://doi.org/10.1063/1.123084

View articletitled, Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes

Open the PDF for in another window

Proton bombardment-induced electron traps in epitaxially grown $n- GaN$

F. D. Auret; S. A. Goodman; F. K. Koschnick; J.-M. Spaeth; B. Beaumont; P. Gibart

Appl. Phys. Lett. 74, 407–409 (1999) https://doi.org/10.1063/1.123043

View articletitled, Proton bombardment-induced electron traps in epitaxially grown <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math></span>

Open the PDF for in another window

Band gaps and band offsets in strained ${GaAs}_{1−y} {Sb}_{y}$ on InP grown by metalorganic chemical vapor deposition

M. Peter; N. Herres; F. Fuchs; K. Winkler; K.-H. Bachem; J. Wagner

Appl. Phys. Lett. 74, 410–412 (1999) https://doi.org/10.1063/1.123044

View articletitled, Band gaps and band offsets in strained <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mi>y</mi></mrow></msub></math></span> on InP grown by metalorganic chemical vapor deposition

Open the PDF for in another window

Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

A. Weber; O. Gauthier-Lafaye; F. H. Julien; J. Brault; M. Gendry; Y. Désieres; T. Benyattou

Appl. Phys. Lett. 74, 413–415 (1999) https://doi.org/10.1063/1.123045

View articletitled, Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

Open the PDF for in another window

Molecular doping of gallium nitride

J. I. Pankove; J. T. Torvik; C.-H. Qiu; I. Grzegory; S. Porowski; P. Quigley; B. Martin

Appl. Phys. Lett. 74, 416–418 (1999) https://doi.org/10.1063/1.123046

View articletitled, Molecular doping of gallium nitride

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY

Magnetic dissipation microscopy in ambient conditions

Roger Proksch; Ken Babcock; Jason Cleveland

Appl. Phys. Lett. 74, 419–421 (1999) https://doi.org/10.1063/1.123047

View articletitled, Magnetic dissipation microscopy in ambient conditions

Open the PDF for in another window

Micromagnetics and magnetoresistance of a Permalloy point contact

R. P. van Gorkom; J. Caro; S. J. C. H. Theeuwen; K. P. Wellock; N. N. Gribov; S. Radelaar

Appl. Phys. Lett. 74, 422–424 (1999) https://doi.org/10.1063/1.123048

View articletitled, Micromagnetics and magnetoresistance of a Permalloy point contact

Open the PDF for in another window

Suppression of the face-centered-cubic-hexagonal-close-packed stacking fault in Co/Cu(111) ultrathin films by pulsed laser deposition

M. Zheng; J. Shen; Ch. V. Mohan; P. Ohresser; J. Barthel; J. Kirschner

Appl. Phys. Lett. 74, 425–427 (1999) https://doi.org/10.1063/1.123049

View articletitled, Suppression of the face-centered-cubic-hexagonal-close-packed stacking fault in Co/Cu(111) ultrathin films by pulsed laser deposition

Open the PDF for in another window

Longitudinal magnetoresistance of ${CrO}_{2}$ thin films

Katsuhiko Suzuki; P. M. Tedrow

Appl. Phys. Lett. 74, 428–429 (1999) https://doi.org/10.1063/1.123050

View articletitled, Longitudinal magnetoresistance of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> thin films

Open the PDF for in another window

Sm(Co, Cu, Ni) thin films with giant coercivity

C. Prados; G. C. Hadjipanayis

Appl. Phys. Lett. 74, 430–432 (1999) https://doi.org/10.1063/1.123051

View articletitled, Sm(Co, Cu, Ni) thin films with giant coercivity

Open the PDF for in another window

Hotspot mixing: A framework for heterodyne mixing in superconducting hot-electron bolometers

D. Wilms Floet; E. Miedema; T. M. Klapwijk; J. R. Gao

Appl. Phys. Lett. 74, 433–435 (1999) https://doi.org/10.1063/1.123052

View articletitled, Hotspot mixing: A framework for heterodyne mixing in superconducting hot-electron bolometers

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY

Change in electromechanical properties of 0.9PMN:0.1PT relaxor ferroelectric induced by uniaxial compressive stress directed perpendicular to the electric field

J. Zhao; A. E. Glazounov; Q. M. Zhang

Appl. Phys. Lett. 74, 436–438 (1999) https://doi.org/10.1063/1.123053

View articletitled, Change in electromechanical properties of 0.9PMN:0.1PT relaxor ferroelectric induced by uniaxial compressive stress directed perpendicular to the electric field

Open the PDF for in another window

Dielectric properties of fullerene films

J. S. Su; Y. F. Chen; K. C. Chiu

Appl. Phys. Lett. 74, 439–441 (1999) https://doi.org/10.1063/1.123054

View articletitled, Dielectric properties of fullerene films

Open the PDF for in another window

DEVICE PHYSICS

Improved energy transfer in electrophosphorescent devices

D. F. O’Brien; M. A. Baldo; M. E. Thompson; S. R. Forrest

Appl. Phys. Lett. 74, 442–444 (1999) https://doi.org/10.1063/1.123055

View articletitled, Improved energy transfer in electrophosphorescent devices

Open the PDF for in another window

Fabry–Perot cavity chemical sensors by silicon micromachining techniques

Jaeheon Han

Appl. Phys. Lett. 74, 445–447 (1999) https://doi.org/10.1063/1.123056

View articletitled, Fabry–Perot cavity chemical sensors by silicon micromachining techniques

Open the PDF for in another window

Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency plasma oxidized

J. J. Sun; V. Soares; P. P. Freitas

Appl. Phys. Lett. 74, 448–450 (1999) https://doi.org/10.1063/1.123057

View articletitled, Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency plasma oxidized

Open the PDF for in another window

Piezoresistive torque magnetometry below 1 K

Christian Lupien; Brett Ellman; Peter Grütter; Louis Taillefer

Appl. Phys. Lett. 74, 451–453 (1999) https://doi.org/10.1063/1.123058

View articletitled, Piezoresistive torque magnetometry below 1 K

Open the PDF for in another window

Nanometer patterning of epitaxial ${CoSi}_{2} /Si(100)$ for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

Q. T. Zhao; F. Klinkhammer; M. Dolle; L. Kappius; S. Mantl

Appl. Phys. Lett. 74, 454–456 (1999) https://doi.org/10.1063/1.123059

View articletitled, Nanometer patterning of epitaxial <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si(100)</mi></math></span> for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

Open the PDF for in another window

Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Leonard F. Register; Elyse Rosenbaum; Kevin Yang

Appl. Phys. Lett. 74, 457–459 (1999) https://doi.org/10.1063/1.123060

View articletitled, Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Open the PDF for in another window

APPLIED BIOPHYSICS

Extended x-ray absorption fine structure study on the cerium(IV)-induced DNA hydrolysis: Implication to the roles of $4f$ orbitals in the catalysis

Hidemi Shigekawa; Masahiko Ishida; Koji Miyake; Ryu Shioda; Yoshitoki Iijima; Takamitsu Imai; Hideyuki Takahashi; Jun Sumaoka; Makoto Komiyama

Appl. Phys. Lett. 74, 460–462 (1999) https://doi.org/10.1063/1.123036

View articletitled, Extended x-ray absorption fine structure study on the cerium(IV)-induced DNA hydrolysis: Implication to the roles of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">4f</mtext></math></span> orbitals in the catalysis

Open the PDF for in another window

INTERDISCIPLINARY AND GENERAL PHYSICS

Mechanism of shape formation of three-dimensional periodic nanostructures by bias sputtering

Shojiro Kawakami; Takayuki Kawashima; Takashi Sato

Appl. Phys. Lett. 74, 463–465 (1999) https://doi.org/10.1063/1.123037

View articletitled, Mechanism of shape formation of three-dimensional periodic nanostructures by bias sputtering

Open the PDF for in another window

Scanning localized viscoelastic image using a quartz crystal resonator combined with an atomic force microscopy

Jong Min Kim; Sang Mok Chang; Hiroshi Muramatsu

Appl. Phys. Lett. 74, 466–468 (1999) https://doi.org/10.1063/1.123033

View articletitled, Scanning localized viscoelastic image using a quartz crystal resonator combined with an atomic force microscopy

Open the PDF for in another window

Application of neutron interferometry to the measurement of thin film density

W. E. Wallace; D. L. Jacobson; M. Arif; A. Ioffe

Appl. Phys. Lett. 74, 469–471 (1999) https://doi.org/10.1063/1.123038

View articletitled, Application of neutron interferometry to the measurement of thin film density

Open the PDF for in another window

Charge storage in Co nanoclusters embedded in ${SiO}_{2}$ by scanning force microscopy

D. M. Schaadt; E. T. Yu; S. Sankar; A. E. Berkowitz

Appl. Phys. Lett. 74, 472–474 (1999) https://doi.org/10.1063/1.123039

View articletitled, Charge storage in Co nanoclusters embedded in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> by scanning force microscopy

Open the PDF for in another window

Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic $n^{+}$ -type doped GaAs

D. P. Wang; K. R. Wang; K. F. Huang; T. C. Huang; A. K. Chu

Appl. Phys. Lett. 74, 475–477 (1999) https://doi.org/10.1063/1.123040

View articletitled, Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup></math></span>-type doped GaAs

Open the PDF for in another window

ERRATA

Erratum: “Microscopic characterization of hot-electron spreading and trapping in ${SiO}_{2}$ films using ballistic electron emission microscopy” [Appl. Phys. Lett. 73, 1871 (1998)]

B. Kaczer; H.-J. Im; J. P. Pelz; R. M. Wallace

Appl. Phys. Lett. 74, 478 (1999) https://doi.org/10.1063/1.123041

View articletitled, Erratum: “Microscopic characterization of hot-electron spreading and trapping in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> films using ballistic electron emission microscopy” [Appl. Phys. Lett. <strong>73</strong>, 1871 (1998)]

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Feedback cooling of an insulating high-Q diamagnetically levitated plate

S. Tian, K. Jadeja, et al.

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Joachim Würfl, Tomás Palacios, et al.

Online ISSN 1077-3118
Print ISSN 0003-6951

Resources

For Researchers
For Librarians
For Advertisers
Our Publishing Partners

Explore

Journals
Physics Today
Conference Proceedings
Books
Special Topics
Publishers

pubs.aip.org

About
User Guide
Contact Us
Register
Help
Privacy Policy
Terms of Use

Connect with AIP Publishing

Facebook
LinkedIn
Twitter
YouTube

© Copyright AIP Publishing LLC

This Feature Is Available To Subscribers Only

Sign In or Create an Account