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LASERS, OPTICS, AND OPTOELECTRONICS

All-optical focal length converter using large optical nonlinearity in guest-host liquid crystals

Hiroshi Ono; Yoshiro Harato

Appl. Phys. Lett. 74, 3429–3431 (1999) https://doi.org/10.1063/1.124117

Abstract

View articletitled, All-optical focal length converter using large optical nonlinearity in guest-host liquid crystals

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Far-infrared laser oscillation from a very small $p- Ge$ crystal under uniaxial stress

N. Hiromoto; I. Hosako; M. Fujiwara

Appl. Phys. Lett. 74, 3432–3434 (1999) https://doi.org/10.1063/1.124118

Abstract

View articletitled, Far-infrared laser oscillation from a very small <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">Ge</mi></math> crystal under uniaxial stress

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Polarization modulation in optoelectronic generation and detection of terahertz beams

Q. Chen; X.-C. Zhang

Appl. Phys. Lett. 74, 3435–3437 (1999) https://doi.org/10.1063/1.124119

Abstract

View articletitled, Polarization modulation in optoelectronic generation and detection of terahertz beams

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InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

B. Lane; Z. Wu; A. Stein; J. Diaz; M. Razeghi

Appl. Phys. Lett. 74, 3438–3440 (1999) https://doi.org/10.1063/1.124120

Abstract

View articletitled, InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

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A vertical cavity light emitting InGaN quantum well heterostructure

Y.-K. Song; H. Zhou; M. Diagne; I. Ozden; A Vertikov; A. V. Nurmikko; C. Carter-Coman; R. S. Kern; F. A. Kish; M. R. Krames

Appl. Phys. Lett. 74, 3441–3443 (1999) https://doi.org/10.1063/1.124121

Abstract

View articletitled, A vertical cavity light emitting InGaN quantum well heterostructure

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Indium tin oxide thin films for organic light-emitting devices

H. Kim; A. Piqué; J. S. Horwitz; H. Mattoussi; H. Murata; Z. H. Kafafi; D. B. Chrisey

Appl. Phys. Lett. 74, 3444–3446 (1999) https://doi.org/10.1063/1.124122

Abstract

View articletitled, Indium tin oxide thin films for organic light-emitting devices

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Response of 1.6 μm ${Er:Y}_{3} {Al}_{5} O_{12}$ fiber-optic temperature sensor up to 1520 K

D. M. Henry; J. H. Herringer; N. Djeu

Appl. Phys. Lett. 74, 3447–3449 (1999) https://doi.org/10.1063/1.124123

Abstract

View articletitled, Response of 1.6 μm <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Er:Y</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">12</mi></mrow></msub></math> fiber-optic temperature sensor up to 1520 K

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Measurements of the THz absorption and dispersion of ZnTe and their relevance to the electro-optic detection of THz radiation

G. Gallot; Jiangquan Zhang; R. W. McGowan; Tae-In Jeon; D. Grischkowsky

Appl. Phys. Lett. 74, 3450–3452 (1999) https://doi.org/10.1063/1.124124

Abstract

View articletitled, Measurements of the THz absorption and dispersion of ZnTe and their relevance to the electro-optic detection of THz radiation

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Investigation of nanolocal fluorescence resonance energy transfer for scanning probe microscopy

G. T. Shubeita; S. K. Sekatskii; M. Chergui; G. Dietler; V. S. Letokhov

Appl. Phys. Lett. 74, 3453–3455 (1999) https://doi.org/10.1063/1.124125

Abstract

View articletitled, Investigation of nanolocal fluorescence resonance energy transfer for scanning probe microscopy

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Nanocrystalline titanium dioxide-dispersed semiconducting polymer photodetectors

K. S. Narayan; Th. B. Singh

Appl. Phys. Lett. 74, 3456–3458 (1999) https://doi.org/10.1063/1.124126

Abstract

View articletitled, Nanocrystalline titanium dioxide-dispersed semiconducting polymer photodetectors

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Photorefractive Bragg gratings in nematic liquid crystals aligned by a magnetic field

Gary P. Wiederrecht; Michael R. Wasielewski

Appl. Phys. Lett. 74, 3459–3461 (1999) https://doi.org/10.1063/1.124127

Abstract

View articletitled, Photorefractive Bragg gratings in nematic liquid crystals aligned by a magnetic field

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PLASMAS AND ELECTRICAL DISCHARGES

Bias-enhanced nucleation and growth of the aligned carbon nanotubes with open ends under microwave plasma synthesis

S. H. Tsai; C. W. Chao; C. L. Lee; H. C. Shih

Appl. Phys. Lett. 74, 3462–3464 (1999) https://doi.org/10.1063/1.124128

Abstract

View articletitled, Bias-enhanced nucleation and growth of the aligned carbon nanotubes with open ends under microwave plasma synthesis

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Study of ground-state titanium ion velocity distributions in laser-produced plasma plumes

G. W. Martin; I. Weaver; T. P. Williamson; A. H. El-Astal; D. Riley; M. J. Lamb; T. Morrow; C. L. S. Lewis

Appl. Phys. Lett. 74, 3465–3467 (1999) https://doi.org/10.1063/1.124129

Abstract

View articletitled, Study of ground-state titanium ion velocity distributions in laser-produced plasma plumes

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Guiding radio frequency waves on metallic foils

M. Friedman; R. F. Fernsler

Appl. Phys. Lett. 74, 3468–3470 (1999) https://doi.org/10.1063/1.124130

Abstract

View articletitled, Guiding radio frequency waves on metallic foils

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Patterning of cubic and hexagonal GaN by ${Cl}_{2} {/N}_{2}$ -based reactive ion etching

J. Fricke; B. Yang; O. Brandt; K. Ploog

Appl. Phys. Lett. 74, 3471–3473 (1999) https://doi.org/10.1063/1.124131

Abstract

View articletitled, Patterning of cubic and hexagonal GaN by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>-based reactive ion etching

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Flow dynamics of sheared liquids explored by inelastic neutron scattering

A. Magerl; H. Zabel; B. Frick; P. Lindner

Appl. Phys. Lett. 74, 3474–3476 (1999) https://doi.org/10.1063/1.124132

Abstract

View articletitled, Flow dynamics of sheared liquids explored by inelastic neutron scattering

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Threshold behavior analysis of in-plane switching mode liquid-crystal cells with asymmetrical surface condition

Makoto Yoneya; Katsumi Kondo

Appl. Phys. Lett. 74, 3477–3479 (1999) https://doi.org/10.1063/1.124133

Abstract

View articletitled, Threshold behavior analysis of in-plane switching mode liquid-crystal cells with asymmetrical surface condition

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Infrared absorption of Li acceptors and shallow donors in ZnSe

H. Nakata; K. Yamada; T. Ohyama

Appl. Phys. Lett. 74, 3480–3482 (1999) https://doi.org/10.1063/1.124134

Abstract

View articletitled, Infrared absorption of Li acceptors and shallow donors in ZnSe

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Revival of interband crystalline reflectance from nanocrystallites in porous silicon by immersion plating

Zain Yamani; A. Alaql; Joel Therrien; Osama Nayfeh; Munir Nayfeh

Appl. Phys. Lett. 74, 3483–3485 (1999) https://doi.org/10.1063/1.124135

Abstract

View articletitled, Revival of interband crystalline reflectance from nanocrystallites in porous silicon by immersion plating

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Photoluminescence study of ZnS/ZnMgS single quantum wells

K. Ichino; K. Ueyama; H. Kariya; N. Suzuki; M. Kitagawa; H. Kobayashi

Appl. Phys. Lett. 74, 3486–3488 (1999) https://doi.org/10.1063/1.124137

Abstract

View articletitled, Photoluminescence study of ZnS/ZnMgS single quantum wells

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Improvements in electrical properties of ${(Ba,Sr)TiO}_{3}$ capacitor with chemical vapor deposited Pt top electrode using Pt hexafluoroacetylacetonate

Jong Myeong Lee; Sang Yeol Kang; Ju Cheol Shin; Won Joon Kim; Cheol Seong Hwang; Hyeong Joon Kim

Appl. Phys. Lett. 74, 3489–3491 (1999) https://doi.org/10.1063/1.124139

Abstract

View articletitled, Improvements in electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba,Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> capacitor with chemical vapor deposited Pt top electrode using Pt hexafluoroacetylacetonate

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Plasma-assisted pulsed laser deposition of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films of improved ferroelectric and crystalline properties

A. C. Rastogi; S. Tirumala; S. B. Desu

Appl. Phys. Lett. 74, 3492–3494 (1999) https://doi.org/10.1063/1.124140

Abstract

View articletitled, Plasma-assisted pulsed laser deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math> thin films of improved ferroelectric and crystalline properties

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High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy

J. R. Chang; Y. K. Su; C. L. Lin; K. M. Wu; Y. T. Lu; D. H. Jaw; H. P. Shiao; W. Lin

Appl. Phys. Lett. 74, 3495–3497 (1999) https://doi.org/10.1063/1.124141

Abstract

View articletitled, High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy

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Optical properties of $β- {Si}_{3} N_{4}$ single crystals grown from a Si melt in $N_{2}$

F. Munakata; K. Matsuo; K. Furuya; Y. Akimune; J. Ye; I. Ishikawa

Appl. Phys. Lett. 74, 3498–3500 (1999) https://doi.org/10.1063/1.124142

Abstract

View articletitled, Optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> single crystals grown from a Si melt in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

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Ion-channeling study of the ${SiC/Si/SiO}_{2} /Si$ interface

W. Jiang; S. Thevuthasan; W. J. Weber; F. Namavar

Appl. Phys. Lett. 74, 3501–3503 (1999) https://doi.org/10.1063/1.124143

Abstract

View articletitled, Ion-channeling study of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiC/Si/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math> interface

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Ultrasonic anomalies in ${La}_{0.67} {Ca}_{0.33} {MnO}_{3}$ near the Curie temperature

Changfei Zhu; Renkui Zheng; Jinrui Su; Jiang He

Appl. Phys. Lett. 74, 3504–3506 (1999) https://doi.org/10.1063/1.124144

Abstract

View articletitled, Ultrasonic anomalies in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.67</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.33</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> near the Curie temperature

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Thermomechanical stress analysis of laminated thick-film multilayer substrates

Jin S. Kim; Kyung W. Paik; Ji H. Lim; Youn Y. Earmme

Appl. Phys. Lett. 74, 3507–3509 (1999) https://doi.org/10.1063/1.124145

Abstract

View articletitled, Thermomechanical stress analysis of laminated thick-film multilayer substrates

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Relaxation of the Si lattice strain in the ${Si(001)–SiO}_{2}$ interface by annealing in $N_{2} O$

Yong Ho Ha; Sehun Kim; Sun Young Lee; Jin Ho Kim; Doo Hyun Baek; Hyun Kyung Kim; Dae Won Moon

Appl. Phys. Lett. 74, 3510–3512 (1999) https://doi.org/10.1063/1.124146

Abstract

View articletitled, Relaxation of the Si lattice strain in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si(001)–SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> interface by annealing in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math>

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Cathodoluminescence spectroscopy and imaging of individual GaN dots

Anders Petersson; Anders Gustafsson; Lars Samuelson; Satoru Tanaka; Yoshinobu Aoyagi

Appl. Phys. Lett. 74, 3513–3515 (1999) https://doi.org/10.1063/1.124147

Abstract

View articletitled, Cathodoluminescence spectroscopy and imaging of individual GaN dots

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Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

C. Jin; Y. Qiu; S. A. Nikishin; H. Temkin

Appl. Phys. Lett. 74, 3516–3518 (1999) https://doi.org/10.1063/1.124138

Abstract

View articletitled, Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

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SEMICONDUCTORS

Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire

M. Pophristic; F. H. Long; M. Schurman; J. Ramer; I. T. Ferguson

Appl. Phys. Lett. 74, 3519–3521 (1999) https://doi.org/10.1063/1.124136

Abstract

View articletitled, Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire

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Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

P. M. Bridger; Z. Z. Bandić; E. C. Piquette; T. C. McGill

Appl. Phys. Lett. 74, 3522–3524 (1999) https://doi.org/10.1063/1.124148

Abstract

View articletitled, Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy

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Generation of high-frequency coherent acoustic phonons in a weakly coupled superlattice

B. A. Glavin; V. A. Kochelap; T. L. Linnik

Appl. Phys. Lett. 74, 3525–3527 (1999) https://doi.org/10.1063/1.124149

Abstract

View articletitled, Generation of high-frequency coherent acoustic phonons in a weakly coupled superlattice

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High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

C. R. Elsass; I. P. Smorchkova; B. Heying; E. Haus; P. Fini; K. Maranowski; J. P. Ibbetson; S. Keller; P. M. Petroff; S. P. DenBaars; U. K. Mishra; J. S. Speck

Appl. Phys. Lett. 74, 3528–3530 (1999) https://doi.org/10.1063/1.124150

Abstract

View articletitled, High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

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Electron mobility exceeding $10^{4} {cm}^{2} /V s$ in an AlGaN–GaN heterostructure grown on a sapphire substrate

T. Wang; Y. Ohno; M. Lachab; D. Nakagawa; T. Shirahama; S. Sakai; H. Ohno

Appl. Phys. Lett. 74, 3531–3533 (1999) https://doi.org/10.1063/1.124151

Abstract

View articletitled, Electron mobility exceeding <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mn>10</mn><mrow><mn>4</mn></mrow></msup><mi xmlns=""> </mi><msup xmlns=""><mi mathvariant="normal">cm</mi><mrow><mi mathvariant="normal">2</mi></mrow></msup><mi mathvariant="normal" xmlns="">/V s</mi></math> in an AlGaN–GaN heterostructure grown on a sapphire substrate

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Atomic ordering and temperature-dependent transient photoconductivity in ${Ga}_{0.47} {In}_{0.53} As$

S. P. Ahrenkiel; S. W. Johnston; R. K. Ahrenkiel; D. J. Arent; M. C. Hanna; M. W. Wanlass

Appl. Phys. Lett. 74, 3534–3536 (1999) https://doi.org/10.1063/1.124152

Abstract

View articletitled, Atomic ordering and temperature-dependent transient photoconductivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math>

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Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

C. Youtsey; L. T. Romano; R. J. Molnar; I. Adesida

Appl. Phys. Lett. 74, 3537–3539 (1999) https://doi.org/10.1063/1.124153

Abstract

View articletitled, Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching

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MAGNETISM AND SUPERCONDUCTIVITY

Oxidation kinetics in ${La}_{0.67} {Ba}_{0.33} {MnO}_{3−δ}$ epitaxy on ${SrTiO}_{3}$ (001) during pulsed-laser deposition

X. D. Zhu; Weidong Si; X. X. Xi; Qi Li; Q. D. Jiang; M. G. Medici

Appl. Phys. Lett. 74, 3540–3542 (1999) https://doi.org/10.1063/1.124154

Abstract

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DIELECTRICS AND FERROELECTRICITY

Step-flow growth of ${SrTiO}_{3}$ thin films with a dielectric constant exceeding $10^{4}$

M. Lippmaa; N. Nakagawa; M. Kawasaki; S. Ohashi; Y. Inaguma; M. Itoh; H. Koinuma

Appl. Phys. Lett. 74, 3543–3545 (1999) https://doi.org/10.1063/1.124155

Abstract

View articletitled, Step-flow growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films with a dielectric constant exceeding <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mn>10</mn><mrow><mn>4</mn></mrow></msup></math>

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The effect of bottom electrode on the performance of thin film based capacitors in the gigahertz region

D. C. Dube; J. Baborowski; P. Muralt; N. Setter

Appl. Phys. Lett. 74, 3546–3548 (1999) https://doi.org/10.1063/1.124156

Abstract

View articletitled, The effect of bottom electrode on the performance of thin film based capacitors in the gigahertz region

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Dielectric hysteresis from transverse electric fields in lead zirconate titanate thin films

Baomin Xu; Yaohong Ye; L. Eric Cross; Jonathan J. Bernstein; Raanan Miller

Appl. Phys. Lett. 74, 3549–3551 (1999) https://doi.org/10.1063/1.124157

Abstract

View articletitled, Dielectric hysteresis from transverse electric fields in lead zirconate titanate thin films

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Top-interface-controlled switching and fatigue endurance of ${(Pb,La)(Zr,Ti)O}_{3}$ ferroelectric capacitors

I. Stolichnov; A. Tagantsev; N. Setter; J. S. Cross; M. Tsukada

Appl. Phys. Lett. 74, 3552–3554 (1999) https://doi.org/10.1063/1.124158

Abstract

View articletitled, Top-interface-controlled switching and fatigue endurance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Pb,La)(Zr,Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> ferroelectric capacitors

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DEVICE PHYSICS

Single-electron memory using carrier traps in a silicon nitride layer

H. Sunamura; T. Sakamoto; Y. Nakamura; H. Kawaura; J. S. Tsai; T. Baba

Appl. Phys. Lett. 74, 3555–3557 (1999) https://doi.org/10.1063/1.124159

Abstract

View articletitled, Single-electron memory using carrier traps in a silicon nitride layer

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Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode

F. Steuber; J. Staudigel; M. Stössel; J. Simmerer; A. Winnacker

Appl. Phys. Lett. 74, 3558–3560 (1999) https://doi.org/10.1063/1.124160

Abstract

View articletitled, Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode

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INTERDISCIPLINARY AND GENERAL PHYSICS

Laser generation of ultrasound in films and coatings

T. W. Murray; S. Krishnaswamy; J. D. Achenbach

Appl. Phys. Lett. 74, 3561–3563 (1999) https://doi.org/10.1063/1.124161

Abstract

View articletitled, Laser generation of ultrasound in films and coatings

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Competition of arsenic and sulfur segregation on Fe-9%W(100) single crystal surfaces

B. W. Busch; T. Gustafsson; C. Uebing

Appl. Phys. Lett. 74, 3564–3566 (1999) https://doi.org/10.1063/1.124162

Abstract

View articletitled, Competition of arsenic and sulfur segregation on Fe-9%W(100) single crystal surfaces

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Infrared vision using uncooled micro-optomechanical camera

T. Perazzo; M. Mao; O. Kwon; A. Majumdar; J. B. Varesi; P. Norton

Appl. Phys. Lett. 74, 3567–3569 (1999) https://doi.org/10.1063/1.124163

Abstract

View articletitled, Infrared vision using uncooled micro-optomechanical camera

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Direct observation of Marangoni convection-induced oscillation at silicon melt surface

Kazuo Onuma; Masanobu Sumiji; Shin Nakamura; Taketoshi Hibiya

Appl. Phys. Lett. 74, 3570–3572 (1999) https://doi.org/10.1063/1.124164

Abstract

View articletitled, Direct observation of Marangoni convection-induced oscillation at silicon melt surface

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Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma

Takashi Matsuura; Yasuhiko Honda; Junichi Murota

Appl. Phys. Lett. 74, 3573–3575 (1999) https://doi.org/10.1063/1.124165

Abstract

View articletitled, Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma

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COMMENTS

Comment on “Amplified spontaneous emission of a ${Nd}^{3+}$ -doped poly(methylmethacrylate) optical fiber at ambient temperature” [Appl. Phys. Lett. 72, 407 (1998)]

Martinus H. V. Werts; Jan W. Verhoeven; Johannes W. Hofstraat

Appl. Phys. Lett. 74, 3576–3577 (1999) https://doi.org/10.1063/1.124166

View articletitled, Comment on “Amplified spontaneous emission of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math>-doped poly(methylmethacrylate) optical fiber at ambient temperature” [Appl. Phys. Lett. 72, 407 (1998)]

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Response to “Comment on ‘Amplified spontaneous emission of a ${Nd}^{3+}$ -doped poly(methyl methacrylate) optical fiber at ambient temperature’ ” [Appl. Phys. Lett. 74, 3576 (1999)]

Q. J. Zhang; P. Wang; X. F. Sun; Y. Zhai; P. Dai; B. Yang; M. Hai; J. P. Xie

Appl. Phys. Lett. 74, 3577 (1999) https://doi.org/10.1063/1.124167

View articletitled, Response to “Comment on ‘Amplified spontaneous emission of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>3+</mtext></mrow></msup></math>-doped poly(methyl methacrylate) optical fiber at ambient temperature’ ” [Appl. Phys. Lett. 74, 3576 (1999)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMENTS

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