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Volume 74, Issue 2

11 January 1999

All Issues

ISSN 0003-6951

EISSN 1077-3118

In this Issue

LASERS, OPTICS, AND OPTOELECTRONICS
CONDENSED MATTER: STRUCTURAL, MECHANICAL, THERMAL, AND ATOMIC TRANSPORT PROPERTIES
SEMICONDUCTORS
MAGNETISM AND SUPERCONDUCTIVITY
DIELECTRICS AND FERROELECTRICITY
DEVICE PHYSICS
INTERDISCIPLINARY AND GENERAL PHYSICS

LASERS, OPTICS, AND OPTOELECTRONICS

Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices

N. N. Ledentsov; A. F. Tsatsul’nikov; A. Yu. Egorov; P. S. Kop’ev; A. R. Kovsh; M. V. Maximov; V. M. Ustinov; B. V. Volovik; A. E. Zhukov; Zh. I. Alferov; I. L. Krestnikov; D. Bimberg; A. Hoffmann

Appl. Phys. Lett. 74, 161–163 (1999) https://doi.org/10.1063/1.123281

Abstract

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Third-order optical nonlinearity of the carbon nanotubes

Xuchun Liu; Jinhai Si; Baohe Chang; Gang Xu; Qiguang Yang; Zhengwei Pan; Sishen Xie; Peixian Ye; Junhua Fan; Meixiang Wan

Appl. Phys. Lett. 74, 164–166 (1999) https://doi.org/10.1063/1.123282

Abstract

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Pulse separation control for mode-locked far-infrared p-Ge lasers

A. V. Muravjov; R. C. Strijbos; C. J. Fredricksen; S. H. Withers; W. Trimble; S. G. Pavlov; V. N. Shastin; R. E. Peale

Appl. Phys. Lett. 74, 167–169 (1999) https://doi.org/10.1063/1.124221

Abstract

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Three-dimensional optical circuitry using two-photon-assisted polymerization

Mukesh P. Joshi; Haridas E. Pudavar; J. Swiatkiewicz; P. N. Prasad; B. A. Reianhardt

Appl. Phys. Lett. 74, 170–172 (1999) https://doi.org/10.1063/1.123283

Abstract

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High-temperature continuous-wave operation of λ∼8 μm quantum cascade lasers

S. Slivken; A. Matlis; C. Jelen; A. Rybaltowski; J. Diaz; M. Razeghi

Appl. Phys. Lett. 74, 173–175 (1999) https://doi.org/10.1063/1.123284

Abstract

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Threshold reduction in pierced microdisk lasers

S. A. Backes; J. R. A. Cleaver; A. P. Heberle; J. J. Baumberg; K. Köhler

Appl. Phys. Lett. 74, 176–178 (1999) https://doi.org/10.1063/1.123285

Abstract

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Experiments on the depolarization near-field scanning optical microscope

Ch. Adelmann; J. Hetzler; G. Scheiber; Th. Schimmel; M. Wegener; H. B. Weber; H. v. Löhneysen

Appl. Phys. Lett. 74, 179–181 (1999) https://doi.org/10.1063/1.122997

Abstract

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Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si

M. Garter; J. Scofield; R. Birkhahn; A. J. Steckl

Appl. Phys. Lett. 74, 182–184 (1999) https://doi.org/10.1063/1.123286

Abstract

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Intersubband absorption in boron-doped multiple Ge quantum dots

J. L. Liu; W. G. Wu; A. Balandin; G. L. Jin; K. L. Wang

Appl. Phys. Lett. 74, 185–187 (1999) https://doi.org/10.1063/1.123287

Abstract

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Optimization of active regions in midinfrared lasers

J. T. Olesberg; Michael E. Flatté; B. J. Brown; C. H. Grein; T. C. Hasenberg; S. A. Anson; Thomas F. Boggess

Appl. Phys. Lett. 74, 188–190 (1999) https://doi.org/10.1063/1.123288

Abstract

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CONDENSED MATTER: STRUCTURAL, MECHANICAL, THERMAL, AND ATOMIC TRANSPORT PROPERTIES

Raman studies on phonon modes in cubic AlGaN alloy

H. Harima; T. Inoue; S. Nakashima; H. Okumura; Y. Ishida; S. Yoshida; T. Koizumi; H. Grille; F. Bechstedt

Appl. Phys. Lett. 74, 191–193 (1999) https://doi.org/10.1063/1.123289

Abstract

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Nanotube self-organization: Formation by step-flow growth

Oleg A. Louchev; Yoichiro Sato

Appl. Phys. Lett. 74, 194–196 (1999) https://doi.org/10.1063/1.123290

Abstract

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Well-aligned carbon nitride nanotubes synthesized in anodic alumina by electron cyclotron resonance chemical vapor deposition

S. L. Sung; S. H. Tsai; C. H. Tseng; F. K. Chiang; X. W. Liu; H. C. Shih

Appl. Phys. Lett. 74, 197–199 (1999) https://doi.org/10.1063/1.123291

Abstract

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Hydrogen uptake in alumina thin films synthesized from an aluminum plasma stream in an oxygen ambient

Jochen M. Schneider; André Anders; Björgvin Hjörvarsson; Ivan Petrov; Karol Macák; Ulf Helmersson; Jan-Eric Sundgren

Appl. Phys. Lett. 74, 200–202 (1999) https://doi.org/10.1063/1.123292

Abstract

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Bonding configurations of nitrogen absorption peak at 960 cm⁻¹ in silicon oxynitride films

Haruhiko Ono; Taeko Ikarashi; Yoshinao Miura; Eiji Hasegawa; Koichi Ando; Tomohisa Kitano

Appl. Phys. Lett. 74, 203–205 (1999) https://doi.org/10.1063/1.123293

Abstract

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Electric-field-induced insulator–metal transitions in thin films of charge-ordered rare-earth manganates

V. Ponnambalam; Sachin Parashar; A. R. Raju; C. N. R. Rao

Appl. Phys. Lett. 74, 206–208 (1999) https://doi.org/10.1063/1.123294

Abstract

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Two species model for deposition and erosion of carbon-nitrogen films

F. D. A. Aarão Reis; D. F. Franceschini

Appl. Phys. Lett. 74, 209–211 (1999) https://doi.org/10.1063/1.123295

Abstract

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Femtosecond pump-probe investigation on relaxation of photoexcitations and spectral narrowing of photoluminescence for poly(para-phenylenevinylene)

Sae Chae Jeoung; Yong Hee Kim; Dongho Kim; Ja-Young Han; Min Sik Jang; Jung-Ik Lee; Hong-Ku Shim; Cheon Min Kim; Choon Sup Yoon

Appl. Phys. Lett. 74, 212–214 (1999) https://doi.org/10.1063/1.123296

Abstract

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Photomelting of selenium at low temperature

Vladimir V. Poborchii; Alexander V. Kolobov; Kazunobu Tanaka

Appl. Phys. Lett. 74, 215–217 (1999) https://doi.org/10.1063/1.123297

Abstract

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Annealing effects and Te mixing in CdTe/CdS heterojunctions

Y. L. Soo; S. Huang; Y. H. Kao; A. D. Compaan

Appl. Phys. Lett. 74, 218–220 (1999) https://doi.org/10.1063/1.123298

Abstract

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Silicon vacancy in SiC: A high-spin state defect

L. Torpo; R. M. Nieminen; K. E. Laasonen; S. Pöykkö

Appl. Phys. Lett. 74, 221–223 (1999) https://doi.org/10.1063/1.123299

Abstract

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Mechanism of enhanced formation of ${C54–TiSi}_{2}$ in high-temperature deposited Ti thin films on preamorphized (001)Si

S. M. Chang; H. Y. Huang; H. Y. Yang; L. J. Chen

Appl. Phys. Lett. 74, 224–226 (1999) https://doi.org/10.1063/1.123300

Abstract

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Confirmation of proton beam bending in graded ${Si}_{1−x} {Ge}_{x} / Si$ layers using ion channeling

D. G. de Kerckhove; M. B. H. Breese; P. J. M. Smulders; D. N. Jamieson

Appl. Phys. Lett. 74, 227–229 (1999) https://doi.org/10.1063/1.123034

Abstract

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Conducting barriers for vertical integration of ferroelectric capacitors on Si

S. Aggarwal; A. M. Dhote; H. Li; S. Ankem; R. Ramesh

Appl. Phys. Lett. 74, 230–232 (1999) https://doi.org/10.1063/1.123301

Abstract

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Nanoscale reconstruction of surface crystallography from three-dimensional polarization distribution in ferroelectric barium–titanate ceramics

L. M. Eng; H.-J. Güntherodt; G. A. Schneider; U. Köpke; J. Muñoz Saldaña

Appl. Phys. Lett. 74, 233–235 (1999) https://doi.org/10.1063/1.123266

Abstract

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Multiphoton-excited luminescence from diamond nanoparticles and an evolution to emission accompanying the laser vaporization process

Yu. D. Glinka; K.-W. Lin; S. H. Lin

Appl. Phys. Lett. 74, 236–238 (1999) https://doi.org/10.1063/1.122998

Abstract

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Nonlinear optical response of Ge nanocrystals in a silica matrix

A. Dowd; R. G. Elliman; M. Samoc; B. Luther-Davies

Appl. Phys. Lett. 74, 239–241 (1999) https://doi.org/10.1063/1.123267

Abstract

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Electrochromic mechanism in $a- {WO}_{3−y}$ thin films

Se-Hee Lee; Hyeonsik M. Cheong; Ji-Guang Zhang; Angelo Mascarenhas; David K. Benson; Satyen K. Deb

Appl. Phys. Lett. 74, 242–244 (1999) https://doi.org/10.1063/1.123268

Abstract

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Room-temperature deep-ultraviolet-stimulated emission from ${Al}_{x} {Ga}_{1−x} N$ thin films grown on sapphire

T. J. Schmidt; Yong-Hoon Cho; J. J. Song; Wei Yang

Appl. Phys. Lett. 74, 245–247 (1999) https://doi.org/10.1063/1.123269

Abstract

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SEMICONDUCTORS

Zeeman splitting of shallow donors in GaN

Francisco Mireles; Sergio E. Ulloa

Appl. Phys. Lett. 74, 248–250 (1999) https://doi.org/10.1063/1.123270

Abstract

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Negative capacitance in forward biased hydrogenated amorphous silicon $p^{+} {-i-n}^{+}$ diodes

F. Lemmi; N. M. Johnson

Appl. Phys. Lett. 74, 251–253 (1999) https://doi.org/10.1063/1.123271

Abstract

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Enhancement of the quantum-confined stark effect utilizing asymmetric quantum well structures

R. K. Gug; W. E. Hagston

Appl. Phys. Lett. 74, 254–256 (1999) https://doi.org/10.1063/1.123272

Abstract

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Evidence of discrete interface traps on thermally grown thin silicon oxide films

Jin Cai; Chih-Tang Sah

Appl. Phys. Lett. 74, 257–259 (1999) https://doi.org/10.1063/1.123273

Abstract

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Modeling of the temperature dependence of the field-effect mobility in thin film devices of conjugated oligomers

J. H. Schön; B. Batlogg

Appl. Phys. Lett. 74, 260–262 (1999) https://doi.org/10.1063/1.123274

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Exciton localization and the Stokes’ shift in InGaN epilayers

R. W. Martin; P. G. Middleton; K. P. O’Donnell; W. Van der Stricht

Appl. Phys. Lett. 74, 263–265 (1999) https://doi.org/10.1063/1.123275

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Threshold photoemission analysis of the surface reactions of triethylgallium and trimethylgallium on GaAs(100): A promising technique for kinetics studies

N. Viguier; F. Maury

Appl. Phys. Lett. 74, 266–268 (1999) https://doi.org/10.1063/1.123276

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Germanium “quantum dots” embedded in silicon: Quantitative study of self-alignment and coarsening

O. Kienzle; F. Ernst; M. Rühle; O. G. Schmidt; K. Eberl

Appl. Phys. Lett. 74, 269–271 (1999) https://doi.org/10.1063/1.123277

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Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation

M. L. O’Malley; G. L. Timp; S. V. Moccio; J. P. Garno; R. N. Kleiman

Appl. Phys. Lett. 74, 272–274 (1999) https://doi.org/10.1063/1.123278

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Low-resistance Ta/Ti Ohmic contacts for p-type GaN

Masaaki Suzuki; T. Kawakami; T. Arai; S. Kobayashi; Yasuo Koide; T. Uemura; N. Shibata; Masanori Murakami

Appl. Phys. Lett. 74, 275–277 (1999) https://doi.org/10.1063/1.123279

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Detection of copper contamination in silicon by surface photovoltage diffusion length measurements

Worth B. Henley; Deepak A. Ramappa; Lubek Jastrezbski

Appl. Phys. Lett. 74, 278–280 (1999) https://doi.org/10.1063/1.123280

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Local coordination of Ga impurity in hydrogenated amorphous germanium studied by extended x-ray absorption fine-structure spectroscopy

G. Dalba; P. Fornasini; R. Grisenti; F. Rocca; D. Comedi; I. Chambouleyron

Appl. Phys. Lett. 74, 281–283 (1999) https://doi.org/10.1063/1.122999

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Majority- and minority-carrier traps in Te-doped AlInP

Y. R. Wu; W. J. Sung; W. I. Lee

Appl. Phys. Lett. 74, 284–286 (1999) https://doi.org/10.1063/1.123000

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Electron mobility in modulation-doped AlGaN–GaN heterostructures

R. Gaska; M. S. Shur; A. D. Bykhovski; A. O. Orlov; G. L. Snider

Appl. Phys. Lett. 74, 287–289 (1999) https://doi.org/10.1063/1.123001

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MAGNETISM AND SUPERCONDUCTIVITY

Tunneling magnetoresistance at up to 270 K in ${La}_{0.8} {Sr}_{0.2} {MnO}_{3} {/SrTiO}_{3} {/La}_{0.8} {Sr}_{0.2} {MnO}_{3}$ junctions with 1.6-nm-thick barriers

Takeshi Obata; Takashi Manako; Yuichi Shimakawa; Yoshimi Kubo

Appl. Phys. Lett. 74, 290–292 (1999) https://doi.org/10.1063/1.123002

Abstract

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Highly sensitive magnetometers based on ${YBa}_{2} {Cu}_{3} O_{7}$ Josephson junction arrays

S. Krey; O. Brügmann; M. Schilling

Appl. Phys. Lett. 74, 293–295 (1999) https://doi.org/10.1063/1.123003

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DIELECTRICS AND FERROELECTRICITY

The ferroelectric properties of c-axis oriented ${Pb}_{5} {Ge}_{3} O_{11}$ thin films prepared by metalorganic chemical vapor deposition

Tingkai Li; Fengyan Zhang; Sheng Teng Hsu

Appl. Phys. Lett. 74, 296–298 (1999) https://doi.org/10.1063/1.123955

Abstract

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Origin of anomalous polarization offsets in compositionally graded ${Pb(Zr, Ti)O}_{3}$ thin films

Mark Brazier; M. McElfresh; Said Mansour

Appl. Phys. Lett. 74, 299–301 (1999) https://doi.org/10.1063/1.123004

Abstract

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Frequency-dependent interface capacitance of ${Al–Al}_{2} O_{3} –Al$ tunnel junctions

K. T. McCarthy; S. B. Arnason; A. F. Hebard

Appl. Phys. Lett. 74, 302–304 (1999) https://doi.org/10.1063/1.123005

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DEVICE PHYSICS

A metal-free, full-color stacked organic light-emitting device

G. Gu; G. Parthasarathy; S. R. Forrest

Appl. Phys. Lett. 74, 305–307 (1999) https://doi.org/10.1063/1.123006

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Visible light-emitting devices with Schottky contacts on an ultrathin amorphous silicon layer containing silicon nanocrystals

S. Fujita; N. Sugiyama

Appl. Phys. Lett. 74, 308–310 (1999) https://doi.org/10.1063/1.123007

Abstract

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Lateral confinement in a resonant tunneling transistor with a buried metallic gate

Lars-Erik Wernersson; Michihiko Suhara; Niclas Carlsson; Kazuhito Furuya; Boel Gustafson; Andrej Litwin; Lars Samuelson; Werner Seifert

Appl. Phys. Lett. 74, 311–313 (1999) https://doi.org/10.1063/1.123008

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Unipolar complementary circuits using double electron layer tunneling transistors

J. S. Moon; J. A. Simmons; M. A. Blount; J. L. Reno; M. J. Hafich

Appl. Phys. Lett. 74, 314–316 (1999) https://doi.org/10.1063/1.123009

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Tunnel diodes fabricated from CdSe nanocrystal monolayers

S.-H. Kim; G. Markovich; S. Rezvani; S. H. Choi; K. L. Wang; J. R. Heath

Appl. Phys. Lett. 74, 317–319 (1999) https://doi.org/10.1063/1.123035

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INTERDISCIPLINARY AND GENERAL PHYSICS

Picosecond ultrasonic study of Mo/Si multilayer structures using an alternating-pump technique

Nen-Wen Pu; Jeffrey Bokor; Seongtae Jeong; Ri-An Zhao

Appl. Phys. Lett. 74, 320–322 (1999) https://doi.org/10.1063/1.123010

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A simple, reliable technique for making electrical contact to multiwalled carbon nanotubes

P. J. de Pablo; E. Graugnard; B. Walsh; R. P. Andres; S. Datta; R. Reifenberger

Appl. Phys. Lett. 74, 323–325 (1999) https://doi.org/10.1063/1.123011

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

CONDENSED MATTER: STRUCTURAL, MECHANICAL, THERMAL, AND ATOMIC TRANSPORT PROPERTIES

SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

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