Skip Nav Destination

Issues

Select Decade

Select Year

Issue

LASERS, OPTICS, AND OPTOELECTRONICS

Temperature and polarization dependence of ${LiNbO}_{3}$ quasiphase-matched wavelength converters

C. Q. Xu; K. Fujita; Y. Ogawa; T. Kamijoh

Appl. Phys. Lett. 74, 1933–1935 (1999) https://doi.org/10.1063/1.123732

Abstract

View articletitled, Temperature and polarization dependence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> quasiphase-matched wavelength converters

Open the PDF for in another window

Large Schottky barriers for $Ni /p- GaN$ contacts

Kenji Shiojima; Tomoya Sugahara; Shiro Sakai

Appl. Phys. Lett. 74, 1936–1938 (1999) https://doi.org/10.1063/1.123733

Abstract

View articletitled, Large Schottky barriers for <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Ni</mi><mi xmlns="">/p-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> contacts

Open the PDF for in another window

Interference effects in bilayer organic light-emitting diodes

S. K. So; W. K. Choi; L. M. Leung; K. Neyts

Appl. Phys. Lett. 74, 1939–1941 (1999) https://doi.org/10.1063/1.123734

Abstract

View articletitled, Interference effects in bilayer organic light-emitting diodes

Open the PDF for in another window

Near-field second harmonic imaging of lead zirconate titanate piezoceramic

Igor I. Smolyaninov; Chi H. Lee; Christopher C. Davis

Appl. Phys. Lett. 74, 1942–1944 (1999) https://doi.org/10.1063/1.123735

Abstract

View articletitled, Near-field second harmonic imaging of lead zirconate titanate piezoceramic

Open the PDF for in another window

Resonant second harmonic generation in ZnSe bulk microcavity

Vittorio Pellegrini; Raffaele Colombelli; Iacopo Carusotto; Fabio Beltram; Silvia Rubini; Roberta Lantier; Alfonso Franciosi; Claudio Vinegoni; Lorenzo Pavesi

Appl. Phys. Lett. 74, 1945–1947 (1999) https://doi.org/10.1063/1.123736

Abstract

View articletitled, Resonant second harmonic generation in ZnSe bulk microcavity

Open the PDF for in another window

Laser-induced selective area band-gap tuning in ${Si/Si}_{1−x} {Ge}_{x}$ microstructures

J. J. Dubowski; N. Rowell; G. C. Aers; H. Lafontaine; D. C. Houghton

Appl. Phys. Lett. 74, 1948–1950 (1999) https://doi.org/10.1063/1.123737

Abstract

View articletitled, Laser-induced selective area band-gap tuning in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> microstructures

Open the PDF for in another window

Light-emitting diodes and laser diodes based on a ${Ga}_{1−x} {In}_{x} {As/GaAs}_{1−y} {Sb}_{y}$ type II superlattice on InP substrate

M. Peter; R. Kiefer; F. Fuchs; N. Herres; K. Winkler; K.-H. Bachem; J. Wagner

Appl. Phys. Lett. 74, 1951–1953 (1999) https://doi.org/10.1063/1.123738

Abstract

View articletitled, Light-emitting diodes and laser diodes based on a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/GaAs</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mi>y</mi></mrow></msub></math> type II superlattice on InP substrate

Open the PDF for in another window

Diode-pumped self-frequency doubling in a ${Nd}^{3+:} {YCa}_{4} {O(BO}_{3})_{3}$ laser

J. M. Eichenholz; D. A. Hammons; L. Shah; Q. Ye; R. E. Peale; M. Richardson; B. H. T. Chai

Appl. Phys. Lett. 74, 1954–1956 (1999) https://doi.org/10.1063/1.123739

Abstract

Open the PDF for in another window

Influence of p-type doping on the degradation of ZnSe laser diodes

D. Albert; J. Nürnberger; V. Hock; M. Ehinger; W. Faschinger; G. Landwehr

Appl. Phys. Lett. 74, 1957–1959 (1999) https://doi.org/10.1063/1.123740

Abstract

View articletitled, Influence of p-type doping on the degradation of ZnSe laser diodes

Open the PDF for in another window

A model of radiative recombination in n-type porous silicon–aluminum Schottky junction

M. Balucani; V. Bondarenko; L. Franchina; G. Lamedica; V. A. Yakovtseva; A. Ferrari

Appl. Phys. Lett. 74, 1960–1962 (1999) https://doi.org/10.1063/1.123741

Abstract

View articletitled, A model of radiative recombination in n-type porous silicon–aluminum Schottky junction

Open the PDF for in another window

Semiconductor photonic dots: Visible wavelength-sized optical resonators

I. Suemune; A. Ueta; A. Avramescu; S. Tanaka; H. Kumano; K. Uesugi

Appl. Phys. Lett. 74, 1963–1965 (1999) https://doi.org/10.1063/1.123714

Abstract

View articletitled, Semiconductor photonic dots: Visible wavelength-sized optical resonators

Open the PDF for in another window

Optical gain and stimulated emission of cleaved cubic gallium nitrite

J. Holst; A. Hoffmann; I. Broser; B. Schöttker; D. J. As; D. Schikora; K. Lischka

Appl. Phys. Lett. 74, 1966–1968 (1999) https://doi.org/10.1063/1.123715

Abstract

View articletitled, Optical gain and stimulated emission of cleaved cubic gallium nitrite

Open the PDF for in another window

PLASMAS AND ELECTRICAL DISCHARGES

Measurement of the electron energy distribution function in an argon radio-frequency discharge in the γ mode

C. M. Deegan; J. P. Goss; D. Vender; M. B. Hopkins

Appl. Phys. Lett. 74, 1969–1971 (1999) https://doi.org/10.1063/1.123716

Abstract

View articletitled, Measurement of the electron energy distribution function in an argon radio-frequency discharge in the γ mode

Open the PDF for in another window

Role of peripheral vacuum regions in the control of the electron cyclotron resonance plasma uniformity

Yoko Ueda; Hiroshi Muta; Yoshinobu Kawai

Appl. Phys. Lett. 74, 1972–1974 (1999) https://doi.org/10.1063/1.123717

Abstract

View articletitled, Role of peripheral vacuum regions in the control of the electron cyclotron resonance plasma uniformity

Open the PDF for in another window

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Evidence that arsenic is incorporated as ${As}_{4}$ molecules in the molecular beam epitaxial growth of ${Hg}_{1−x} {Cd}_{x} Te:As$

J. W. Garland; C. H. Grein; B. Yang; P. S. Wijewarnasuriya; F. Aqariden; S. Sivananthan

Appl. Phys. Lett. 74, 1975–1977 (1999) https://doi.org/10.1063/1.123718

Abstract

View articletitled, Evidence that arsenic is incorporated as <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> molecules in the molecular beam epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Hg</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te:As</mi></math>

Open the PDF for in another window

External quantum efficiency of single porous silicon nanoparticles

G. M. Credo; M. D. Mason; S. K. Buratto

Appl. Phys. Lett. 74, 1978–1980 (1999) https://doi.org/10.1063/1.123719

Abstract

View articletitled, External quantum efficiency of single porous silicon nanoparticles

Open the PDF for in another window

Stress effects in the oxidation of planar silicon substrates

A. Mihalyi; R. J. Jaccodine; T. J. Delph

Appl. Phys. Lett. 74, 1981–1983 (1999) https://doi.org/10.1063/1.123720

Abstract

View articletitled, Stress effects in the oxidation of planar silicon substrates

Open the PDF for in another window

Enhanced optical emission from GaN films grown on a silicon substrate

Xiong Zhang; Soo-Jin Chua; Peng Li; Kok-Boon Chong; Zhe-Chuan Feng

Appl. Phys. Lett. 74, 1984–1986 (1999) https://doi.org/10.1063/1.123721

Abstract

View articletitled, Enhanced optical emission from GaN films grown on a silicon substrate

Open the PDF for in another window

Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations

L. B. Freund; J. A. Floro; E. Chason

Appl. Phys. Lett. 74, 1987–1989 (1999) https://doi.org/10.1063/1.123722

Abstract

View articletitled, Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations

Open the PDF for in another window

Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams

G. Fierling; X. Letartre; P. Viktorovitch; J. P. Lainé; C. Priester

Appl. Phys. Lett. 74, 1990–1992 (1999) https://doi.org/10.1063/1.123723

Abstract

View articletitled, Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams

Open the PDF for in another window

SEMICONDUCTORS

Nonlinear optical absorption and temporal response of arsenic- and oxygen-implanted GaAs

M. J. Lederer; B. Luther-Davies; H. H. Tan; C. Jagadish; M. Haiml; U. Siegner; U. Keller

Appl. Phys. Lett. 74, 1993–1995 (1999) https://doi.org/10.1063/1.123724

Abstract

View articletitled, Nonlinear optical absorption and temporal response of arsenic- and oxygen-implanted GaAs

Open the PDF for in another window

Application of a new airbridge-gate structure for high-performance ${Ga}_{0.51} {In}_{0.49} {P/In}_{0.15} {Ga}_{0.85} As/GaAs$ pseudomorphic field-effect transistors

Wen-Chau Liu; Wen-Lung Chang; Hsi-Jen Pan; Kuo-Hui Yu; Shung-Ching Feng; Wen-Shiung Lour

Appl. Phys. Lett. 74, 1996–1998 (1999) https://doi.org/10.1063/1.123725

Abstract

Open the PDF for in another window

DX centers in GaAs/Si-δ/AlAs heterostructure

R. H. Miwa; T. M. Schmidt

Appl. Phys. Lett. 74, 1999–2001 (1999) https://doi.org/10.1063/1.123726

Abstract

View articletitled, DX centers in GaAs/Si-δ/AlAs heterostructure

Open the PDF for in another window

Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Fabio Della Sala; Aldo Di Carlo; Paolo Lugli; Fabio Bernardini; Vincenzo Fiorentini; Reinhard Scholz; Jean-Marc Jancu

Appl. Phys. Lett. 74, 2002–2004 (1999) https://doi.org/10.1063/1.123727

Abstract

View articletitled, Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Open the PDF for in another window

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

G. Lucovsky; Y. Wu; H. Niimi; V. Misra; J. C. Phillips

Appl. Phys. Lett. 74, 2005–2007 (1999) https://doi.org/10.1063/1.123728

Abstract

View articletitled, Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

Open the PDF for in another window

Ultraviolet Raman stress mapping in silicon

M. Holtz; J. C. Carty; W. M. Duncan

Appl. Phys. Lett. 74, 2008–2010 (1999) https://doi.org/10.1063/1.123729

Abstract

View articletitled, Ultraviolet Raman stress mapping in silicon

Open the PDF for in another window

Characterization of carrier-trapping phenomena in ultrathin chemical oxides using x-ray photoelectron spectroscopy time-dependent measurements

Y. Hagimoto; T. Fujita; K. Ono; H. Fujioka; M. Oshima; K. Hirose; M. Tajima

Appl. Phys. Lett. 74, 2011–2013 (1999) https://doi.org/10.1063/1.123730

Abstract

View articletitled, Characterization of carrier-trapping phenomena in ultrathin chemical oxides using x-ray photoelectron spectroscopy time-dependent measurements

Open the PDF for in another window

Three color coherent generation and control of current in low-temperature-grown GaAs

J. M. Fraser; A. Haché; A. I. Shkrebtii; J. E. Sipe; H. M. van Driel

Appl. Phys. Lett. 74, 2014–2016 (1999) https://doi.org/10.1063/1.123731

Abstract

View articletitled, Three color coherent generation and control of current in low-temperature-grown GaAs

Open the PDF for in another window

Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

Lourdes Pelaz; G. H. Gilmer; V. C. Venezia; H.-J. Gossmann; M. Jaraiz; J. Barbolla

Appl. Phys. Lett. 74, 2017–2019 (1999) https://doi.org/10.1063/1.123742

Abstract

View articletitled, Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

Open the PDF for in another window

Direct observation of strained substrate in graded ${Si}_{1−x} {Ge}_{x} / Si$ heterostructures

M. Tao; J. W. Lyding

Appl. Phys. Lett. 74, 2020–2022 (1999) https://doi.org/10.1063/1.123743

Abstract

View articletitled, Direct observation of strained substrate in graded <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> heterostructures

Open the PDF for in another window

Aluminum gallium nitride short-period superlattices doped with magnesium

A. Saxler; W. C. Mitchel; P. Kung; M. Razeghi

Appl. Phys. Lett. 74, 2023–2025 (1999) https://doi.org/10.1063/1.123744

Abstract

View articletitled, Aluminum gallium nitride short-period superlattices doped with magnesium

Open the PDF for in another window

Light-induced mobility enhancement in delta-doped ${GaAs/In}_{0.26} {Ga}_{0.74} As/GaAs$ quantum wells grown by molecular beam epitaxy on GaAs(001)

M. Zervos; M. Elliott; D. I. Westwood

Appl. Phys. Lett. 74, 2026–2028 (1999) https://doi.org/10.1063/1.123745

Abstract

View articletitled, Light-induced mobility enhancement in delta-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs/In</mi><mrow><mi mathvariant="normal">0.26</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.74</mi></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> quantum wells grown by molecular beam epitaxy on GaAs(001)

Open the PDF for in another window

Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

Sukho Yoon; Youngboo Moon; Tae-Wan Lee; Euijoon Yoon; Young Dong Kim

Appl. Phys. Lett. 74, 2029–2031 (1999) https://doi.org/10.1063/1.123746

Abstract

View articletitled, Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

Open the PDF for in another window

Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources

A. Krtschil; H. Witte; M. Lisker; J. Christen; U. Birkle; S. Einfeldt; D. Hommel

Appl. Phys. Lett. 74, 2032–2034 (1999) https://doi.org/10.1063/1.123747

Abstract

View articletitled, Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources

Open the PDF for in another window

Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride

S. J. Rosner; G. Girolami; H. Marchand; P. T. Fini; J. P. Ibbetson; L. Zhao; S. Keller; U. K. Mishra; S. P. DenBaars; J. S. Speck

Appl. Phys. Lett. 74, 2035–2037 (1999) https://doi.org/10.1063/1.123748

Abstract

View articletitled, Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride

Open the PDF for in another window

Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron–interstitial cluster formation

A. D. Lilak; S. K. Earles; M. E. Law; K. S. Jones

Appl. Phys. Lett. 74, 2038–2040 (1999) https://doi.org/10.1063/1.123749

Abstract

View articletitled, Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron–interstitial cluster formation

Open the PDF for in another window

Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study

E. Alphandéry; R. J. Nicholas; N. J. Mason; B. Zhang; P. Möck; G. R. Booker

Appl. Phys. Lett. 74, 2041–2043 (1999) https://doi.org/10.1063/1.123750

Abstract

View articletitled, Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY

Investigation on ${Ag/Pb(Zr}_{0.53} {Ti}_{0.47} {)O}_{3} {/YBa}_{2} {Cu}_{3} O_{7−δ}$ three-terminal system with small gate area

B. T. Liu; Z. Hao; Y. F. Chen; B. Xu; H. Chen; F. Wu; B. R. Zhao; Yu. Kislinskii; E. Stepantsov

Appl. Phys. Lett. 74, 2044–2046 (1999) https://doi.org/10.1063/1.123751

Abstract

Open the PDF for in another window

Low-field magnetostriction in an annealed Co–30% Fe alloy

L. H. Chen; T. J. Klemmer; H. Mavoori; S. Jin

Appl. Phys. Lett. 74, 2047–2049 (1999) https://doi.org/10.1063/1.123752

Abstract

View articletitled, Low-field magnetostriction in an annealed Co–30% Fe alloy

Open the PDF for in another window

Microstructure of epitaxial $α- {Fe}_{2} O_{3}$ grains in Ba-ferrite thin films grown on sapphire (001)

T. S. Cho; S. J. Doh; J. H. Je; D. Y. Noh

Appl. Phys. Lett. 74, 2050–2052 (1999) https://doi.org/10.1063/1.123753

Abstract

View articletitled, Microstructure of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">α-</mi><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> grains in Ba-ferrite thin films grown on sapphire (001)

Open the PDF for in another window

High- $T_{c}$ edge junctions with a Ga-doped ${YBa}_{2} {Cu}_{3} O_{7−δ}$ barrier and interface resistances

I. H. Song; E.-H. Lee; B. M. Kim; I. Song; G. Park

Appl. Phys. Lett. 74, 2053–2055 (1999) https://doi.org/10.1063/1.123754

Abstract

View articletitled, High-<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math> edge junctions with a Ga-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7−δ</mi></mrow></msub></math> barrier and interface resistances

Open the PDF for in another window

Phase boundary structure in Nd–Fe–B sintered magnets

Ken Makita; Osamu Yamashita

Appl. Phys. Lett. 74, 2056–2058 (1999) https://doi.org/10.1063/1.123755

Abstract

View articletitled, Phase boundary structure in Nd–Fe–B sintered magnets

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY

A monoclinic ferroelectric phase in the $Pb ({Zr}_{1−x} {Ti}_{x}) O_{3}$ solid solution

B. Noheda; D. E. Cox; G. Shirane; J. A. Gonzalo; L. E. Cross; S-E. Park

Appl. Phys. Lett. 74, 2059–2061 (1999) https://doi.org/10.1063/1.123756

Abstract

View articletitled, A monoclinic ferroelectric phase in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> solid solution

Open the PDF for in another window

Characterization of femtosecond self-pumped phase conjugation in ${BaTiO}_{3}$

Changxi Yang; K. Minoshima; K. Seta; H. Matsumoto

Appl. Phys. Lett. 74, 2062–2064 (1999) https://doi.org/10.1063/1.123757

Abstract

View articletitled, Characterization of femtosecond self-pumped phase conjugation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

Open the PDF for in another window

Ferroelectricity of a hemicyanine dye in ultrathin organized molecular films: hysteresis and pyroelectric effects

Shihong Ma; Mei Yan; Xingze Lu; Wencheng Wang; Zhanghai Chen; Pulin Liu; Cuifeng Qu; Shenwei Lin; Aili Ding

Appl. Phys. Lett. 74, 2065–2066 (1999) https://doi.org/10.1063/1.123758

Abstract

View articletitled, Ferroelectricity of a hemicyanine dye in ultrathin organized molecular films: hysteresis and pyroelectric effects

Open the PDF for in another window

Relaxation studies of thin films oriented by corona poling for a poly(p-phenyleneterephthalate) with nonlinear optical side groups

Suck-Hyun Lee; Jung-Woo Lee; O-Pil Kwon; Chong-Ha Lee; Young-Hee Won

Appl. Phys. Lett. 74, 2067–2069 (1999) https://doi.org/10.1063/1.123759

Abstract

View articletitled, Relaxation studies of thin films oriented by corona poling for a poly(p-phenyleneterephthalate) with nonlinear optical side groups

Open the PDF for in another window

Polarization switching of lithium niobate with giant internal field

L.-H. Peng; Y.-C. Fang; Y.-C. Lin

Appl. Phys. Lett. 74, 2070–2072 (1999) https://doi.org/10.1063/1.123760

Abstract

View articletitled, Polarization switching of lithium niobate with giant internal field

Open the PDF for in another window

DEVICE PHYSICS

An in-plane GaAs single-electron memory cell operating at 77 K

K.-H. Yoo; J. W. Park; Jinhee Kim; K. S. Park; S. C. Oh; J.-O. Lee; J. J. Kim; J. B. Choi; J. J. Lee

Appl. Phys. Lett. 74, 2073–2075 (1999) https://doi.org/10.1063/1.123761

Abstract

View articletitled, An in-plane GaAs single-electron memory cell operating at 77 K

Open the PDF for in another window

Strained Si n-channel metal–oxide–semiconductor transistor on relaxed ${Si}_{1−x} {Ge}_{x}$ formed by ion implantation of Ge

S. John; S. K. Ray; E. Quinones; S. K. Banerjee

Appl. Phys. Lett. 74, 2076–2078 (1999) https://doi.org/10.1063/1.123762

Abstract

View articletitled, Strained Si n-channel metal–oxide–semiconductor transistor on relaxed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> formed by ion implantation of Ge

Open the PDF for in another window

A wideband electronically tunable microwave notch filter in yttrium iron garnet–gallium arsenide material structure

Chen S. Tsai; Jun Su

Appl. Phys. Lett. 74, 2079–2080 (1999) https://doi.org/10.1063/1.123763

Abstract

View articletitled, A wideband electronically tunable microwave notch filter in yttrium iron garnet–gallium arsenide material structure

Open the PDF for in another window

Polymer solution light-emitting devices

Shun-Chi Chang; Yang Yang; Qibing Pei

Appl. Phys. Lett. 74, 2081–2083 (1999) https://doi.org/10.1063/1.123764

Abstract

View articletitled, Polymer solution light-emitting devices

Open the PDF for in another window

INTERDISCIPLINARY AND GENERAL PHYSICS

Controlled fabrication of metallic electrodes with atomic separation

A. F. Morpurgo; C. M. Marcus; D. B. Robinson

Appl. Phys. Lett. 74, 2084–2086 (1999) https://doi.org/10.1063/1.123765

Abstract

View articletitled, Controlled fabrication of metallic electrodes with atomic separation

Open the PDF for in another window

Quantitative theory for laser-generated Lamb waves in orthotropic thin plates

J. C. Cheng; S. Y. Zhang

Appl. Phys. Lett. 74, 2087–2089 (1999) https://doi.org/10.1063/1.123766

Abstract

View articletitled, Quantitative theory for laser-generated Lamb waves in orthotropic thin plates

Open the PDF for in another window

Identification of two patterns in magnetic force microscopy of shape memory alloys

B. R. A. Neves; M. S. Andrade

Appl. Phys. Lett. 74, 2090–2092 (1999) https://doi.org/10.1063/1.123767

Abstract

View articletitled, Identification of two patterns in magnetic force microscopy of shape memory alloys

Open the PDF for in another window

ERRATA

Erratum: “Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic seebeck and conductivity study” [Appl. Phys. Lett. 73, 3202 (1998)]

M. Pfeiffer; A. Beyer; T. Fritz; K. Leo

Appl. Phys. Lett. 74, 2093 (1999) https://doi.org/10.1063/1.123768

View articletitled, Erratum: “Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic seebeck and conductivity study” [Appl. Phys. Lett. 73, 3202 (1998)]

Open the PDF for in another window

Erratum: “Ohmic contacts formed by electrodeposition and physical vapor deposition on $p- GaN$ ” [Appl. Phys. Lett. 73, 3402 (1998)]

J. M. DeLucca; H. S. Venugopalan; S. E. Mohney; R. F. Karlicek, Jr.

Appl. Phys. Lett. 74, 2093 (1999) https://doi.org/10.1063/1.123769

View articletitled, Erratum: “Ohmic contacts formed by electrodeposition and physical vapor deposition on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math>” [Appl. Phys. Lett. 73, 3402 (1998)]

Open the PDF for in another window

Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

SEMICONDUCTORS

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

ERRATA

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only