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Issues
15 March 1999
ISSN 0003-6951
EISSN 1077-3118
LASERS, OPTICS, AND OPTOELECTRONICS
A full vector analysis of near-field luminescence probing of a single quantum dot
Appl. Phys. Lett. 74, 1507–1509 (1999)
https://doi.org/10.1063/1.123598
Hole limited recombination in polymer light-emitting diodes
J. C. Scott; G. G. Malliaras; W. D. Chen; J.-C. Breach; J. R. Salem; P. J. Brock; S. B. Sachs; C. E. D. Chidsey
Appl. Phys. Lett. 74, 1510–1512 (1999)
https://doi.org/10.1063/1.123599
Field enhancement effect of small Ag particles on the fluorescence from -doped glass
Appl. Phys. Lett. 74, 1513–1515 (1999)
https://doi.org/10.1063/1.123600
Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory
Appl. Phys. Lett. 74, 1516–1518 (1999)
https://doi.org/10.1063/1.123601
Periodic poling of for quasi-phase matched blue light generation
Appl. Phys. Lett. 74, 1519–1521 (1999)
https://doi.org/10.1063/1.123602
Measurement of spontaneous emission from a two-dimensional photonic band gap defined microcavity at near-infrared wavelengths
Appl. Phys. Lett. 74, 1522–1524 (1999)
https://doi.org/10.1063/1.123603
High-efficiency diode lasers at high output power
Appl. Phys. Lett. 74, 1525–1527 (1999)
https://doi.org/10.1063/1.123604
Characterization of dynamic optical nonlinearities with pulse trains
Appl. Phys. Lett. 74, 1531–1533 (1999)
https://doi.org/10.1063/1.123606
Bulk periodically poled lithium niobate doped with ions: Growth and characterization
Appl. Phys. Lett. 74, 1534–1536 (1999)
https://doi.org/10.1063/1.123607
High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability
O. Gauthier-Lafaye; F. H. Julien; S. Cabaret; J.-M. Lourtioz; G. Strasser; E. Gornik; M. Helm; P. Bois
Appl. Phys. Lett. 74, 1537–1539 (1999)
https://doi.org/10.1063/1.123608
Blue and infrared up-conversion in -doped fluorozirconate fiber pumped at 1.06, 1.117, and 1.18 μm
Appl. Phys. Lett. 74, 1540–1542 (1999)
https://doi.org/10.1063/1.123609
Photorefractive multiple quantum well devices approaching diffraction-limited resolution
Appl. Phys. Lett. 74, 1543–1545 (1999)
https://doi.org/10.1063/1.123610
PLASMAS AND ELECTRICAL DISCHARGES
Effect of initial plasma geometry and temperature on dynamic plume expansion in dual-laser ablation
Appl. Phys. Lett. 74, 1546–1548 (1999)
https://doi.org/10.1063/1.123611
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER
Scanning room-temperature photoluminescence in polycrystalline silicon
Appl. Phys. Lett. 74, 1555–1557 (1999)
https://doi.org/10.1063/1.123614
Decay dynamics of near-infrared photoluminescence from Ge nanocrystals
Appl. Phys. Lett. 74, 1558–1560 (1999)
https://doi.org/10.1063/1.123615
Integration of nonlinear dielectric barium strontium titanate with polycrystalline yttrium iron garnet
Appl. Phys. Lett. 74, 1564–1566 (1999)
https://doi.org/10.1063/1.123617
1.54 m photoluminescent properties of erbium-doped superlattices
Appl. Phys. Lett. 74, 1573–1575 (1999)
https://doi.org/10.1063/1.123620
SEMICONDUCTORS
Non-Gaussian behavior and anticorrelations in ultrathin gate oxides after soft breakdown
Appl. Phys. Lett. 74, 1579–1581 (1999)
https://doi.org/10.1063/1.123622
Effect of surface proximity on end-of-range loop dissolution in silicon
Appl. Phys. Lett. 74, 1591–1593 (1999)
https://doi.org/10.1063/1.123626
Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material
Appl. Phys. Lett. 74, 1594–1596 (1999)
https://doi.org/10.1063/1.123627
Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers
Appl. Phys. Lett. 74, 1597–1599 (1999)
https://doi.org/10.1063/1.123628
A simple lateral transport device of strongly interacting electron and hole layers
Appl. Phys. Lett. 74, 1603–1605 (1999)
https://doi.org/10.1063/1.123630
MAGNETISM AND SUPERCONDUCTIVITY
Surface pattern and large low-field magnetoresistance in films
Appl. Phys. Lett. 74, 1606–1608 (1999)
https://doi.org/10.1063/1.123631
Dynamic scaling of magnetic hysteresis in micron-sized disks
Appl. Phys. Lett. 74, 1609–1611 (1999)
https://doi.org/10.1063/1.123632
Theory of interaction in organic light emitting devices
Appl. Phys. Lett. 74, 1612–1614 (1999)
https://doi.org/10.1063/1.123633
Effect of three-dimensional strain states on magnetic anisotropy of epitaxial thin films
Appl. Phys. Lett. 74, 1615–1617 (1999)
https://doi.org/10.1063/1.123634
90° magneto-optical polar Kerr effect in layered magnetic semiconductor/metal structures
Appl. Phys. Lett. 74, 1618–1620 (1999)
https://doi.org/10.1063/1.123635
DEVICE PHYSICS
Nanofabrication on Si oxide with scanning tunneling microscope: Mechanism of the low-energy electron-stimulated reaction
Appl. Phys. Lett. 74, 1621–1623 (1999)
https://doi.org/10.1063/1.123636
Anomalous critical current in double-barrier devices
Appl. Phys. Lett. 74, 1624–1626 (1999)
https://doi.org/10.1063/1.123637
Fabrication of silicon cones and pillars using rough metal films as plasma etching masks
Appl. Phys. Lett. 74, 1627–1629 (1999)
https://doi.org/10.1063/1.123638
INTERDISCIPLINARY AND GENERAL PHYSICS
Effects of the surface phase on the growth and properties of films
S. Niki; P. J. Fons; A. Yamada; Y. Lacroix; H. Shibata; H. Oyanagi; M. Nishitani; T. Negami; T. Wada
Appl. Phys. Lett. 74, 1630–1632 (1999)
https://doi.org/10.1063/1.123639
Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors
Appl. Phys. Lett. 74, 1633–1635 (1999)
https://doi.org/10.1063/1.123640
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.