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Volume 73, Issue 7

17 August 1998

All Issues

ISSN 0003-6951

EISSN 1077-3118

In this Issue

OPTICS
ACOUSTICS
FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
SEMICONDUCTORS
SUPERCONDUCTORS
MAGNETISM

OPTICS

Domain broadening in quasi-phase-matched nonlinear optical devices

G. Rosenman; Kh. Garb; A. Skliar; M. Oron; D. Eger; M. Katz

Appl. Phys. Lett. 73, 865–867 (1998) https://doi.org/10.1063/1.121969

Abstract

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Modeling the optical properties of hexagonal GaN

Aleksandra B. Djurišić; E. Herbert Li

Appl. Phys. Lett. 73, 868–870 (1998) https://doi.org/10.1063/1.121970

Abstract

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Photon generation by silicon diodes in avalanche breakdown

N. Akil; S. E. Kerns; D. V. Kerns, Jr.; A. Hoffmann; J-P. Charles

Appl. Phys. Lett. 73, 871–872 (1998) https://doi.org/10.1063/1.121971

Abstract

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Ultrafast generation of blue light by efficient second-harmonic generation in periodically-poled bulk and waveguide potassium titanyl phosphate

Y. Wang; V. Petrov; Y. J. Ding; Y. Zheng; J. B. Khurgin; W. P. Risk

Appl. Phys. Lett. 73, 873–875 (1998) https://doi.org/10.1063/1.121972

Abstract

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Coherent control of optical gain from electronic intersubband transitions in semiconductors

Xuedong Hu; Walter Pötz

Appl. Phys. Lett. 73, 876–878 (1998) https://doi.org/10.1063/1.121973

Abstract

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Energy transfer from a naphthalimide functionalized side chain polymer towards DCM used as a dopant molecule

C.-M. Bouché; P. Le Barny; H. Facoetti; P. Robin

Appl. Phys. Lett. 73, 879–881 (1998) https://doi.org/10.1063/1.122025

Abstract

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ACOUSTICS

Transverse surface acoustic wave detection by scanning acoustic force microscopy

G. Behme; T. Hesjedal; E. Chilla; H.-J. Fröhlich

Appl. Phys. Lett. 73, 882–884 (1998) https://doi.org/10.1063/1.122026

Abstract

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FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

Generation of intense excimer radiation from high-pressure hollow cathode discharges

Ahmed El-Habachi; Karl H. Schoenbach

Appl. Phys. Lett. 73, 885–887 (1998) https://doi.org/10.1063/1.122027

Abstract

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Experimental evidence for high-yield $C_{74}$ production in an arc periphery plasma

R. Hatakeyama; T. Hirata; H. Ishida; N. Sato

Appl. Phys. Lett. 73, 888–890 (1998) https://doi.org/10.1063/1.122028

Abstract

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CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Effects of ion irradiation on the residual stresses in Cr thin films

A. Misra; S. Fayeulle; H. Kung; T. E. Mitchell; M. Nastasi

Appl. Phys. Lett. 73, 891–893 (1998) https://doi.org/10.1063/1.122029

Abstract

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Combinatorial synthesis and evaluation of epitaxial ferroelectric device libraries

I. Takeuchi; H. Chang; C. Gao; P. G. Schultz; X.-D. Xiang; R. P. Sharma; M. J. Downes; T. Venkatesan

Appl. Phys. Lett. 73, 894–896 (1998) https://doi.org/10.1063/1.122030

Abstract

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Improvement in performance of electrically tunable devices based on nonlinear dielectric ${SrTiO}_{3}$ using a homoepitaxial ${LaAlO}_{3}$ interlayer

Q. X. Jia; A. T. Findikoglu; D. Reagor; P. Lu

Appl. Phys. Lett. 73, 897–899 (1998) https://doi.org/10.1063/1.122031

Abstract

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Mechanism of low temperature C54 ${TiSi}_{2}$ formation bypassing C49 ${TiSi}_{2} :$ Effect of Si microstructure and Mo impurities on the Ti–Si reaction path

J. A. Kittl; M. A. Gribelyuk; S. B. Samavedam

Appl. Phys. Lett. 73, 900–902 (1998) https://doi.org/10.1063/1.122032

Abstract

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Ferroelectric characterization of highly (0001)-oriented ${YMnO}_{3}$ thin films grown by chemical solution deposition

Woo-Chul Yi; Joon-Seon Choe; Chang-Rok Moon; Sook-Il Kwun; Jong-Gul Yoon

Appl. Phys. Lett. 73, 903–905 (1998) https://doi.org/10.1063/1.122443

Abstract

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Coherent x-ray scattering from an optical grating

Binhua Lin; Mark L. Schlossman; Mati Meron; Scott M. Williams; Zhengqing Huang; P. James Viccaro

Appl. Phys. Lett. 73, 906–908 (1998) https://doi.org/10.1063/1.122033

Abstract

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Recover the phases from intensity data of x-ray diffraction

Gu Xu

Appl. Phys. Lett. 73, 909–911 (1998) https://doi.org/10.1063/1.122034

Abstract

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Wavelength dependence of 4-dimethylamino- $4^{'}$ -nitrostilbene polymer thin film photodegradation

Qiang Zhang; Michael Canva; George Stegeman

Appl. Phys. Lett. 73, 912–914 (1998) https://doi.org/10.1063/1.122035

Abstract

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Influence of negative dc bias voltage on structural transformation of carbon nitride at 600 °C

Y. K. Yap; S. Kida; T. Aoyama; Y. Mori; T. Sasaki

Appl. Phys. Lett. 73, 915–917 (1998) https://doi.org/10.1063/1.122036

Abstract

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Field emission from single-wall carbon nanotube films

Jean-Marc Bonard; Jean-Paul Salvetat; Thomas Stöckli; Walt A. de Heer; László Forró; André Châtelain

Appl. Phys. Lett. 73, 918–920 (1998) https://doi.org/10.1063/1.122037

Abstract

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Three-dimensional orientational control of molecules by slantwise photoirradiation

Kunihiro Ichimura; Shin’ya Morino; Haruhisa Akiyama

Appl. Phys. Lett. 73, 921–923 (1998) https://doi.org/10.1063/1.122038

Abstract

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X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates

P. M. Mooney; J. A. Ott; J. O. Chu; J. L. Jordan-Sweet

Appl. Phys. Lett. 73, 924–926 (1998) https://doi.org/10.1063/1.122039

Abstract

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SEMICONDUCTORS

Growth and field dependent dielectric properties of epitaxial ${Na}_{0.5} K_{0.5} {NbO}_{3}$ thin films

Xin Wang; Ulf Helmersson; Sveinn Olafsson; Staffan Rudner; Lars-David Wernlund; Spartak Gevorgian

Appl. Phys. Lett. 73, 927–929 (1998) https://doi.org/10.1063/1.122040

Abstract

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Analysis of composition fluctuations on an atomic scale in ${Al}_{0.25} {Ga}_{0.75} N$ by high-resolution transmission electron microscopy

B. Neubauer; A. Rosenauer; D. Gerthsen; O. Ambacher; M. Stutzmann

Appl. Phys. Lett. 73, 930–932 (1998) https://doi.org/10.1063/1.122041

Abstract

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Oxide thickness dependence of energy shifts in the Si $2p$ levels for the ${SiO}_{2} /Si$ structure, and its elimination by a palladium overlayer

Hikaru Kobayashi; Tomohiro Kubota; Hidefumi Kawa; Yoshihiro Nakato; Masayoshi Nishiyama

Appl. Phys. Lett. 73, 933–935 (1998) https://doi.org/10.1063/1.122042

Abstract

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Energetics of AlN thin films on the ${Al}_{2} O_{3} (0001)$ surface

R. Di Felice; J. E. Northrup

Appl. Phys. Lett. 73, 936–938 (1998) https://doi.org/10.1063/1.122044

Abstract

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The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001)

S. Miwa; L. H. Kuo; K. Kimura; T. Yasuda; A. Ohtake; C. G. Jin; T. Yao

Appl. Phys. Lett. 73, 939–941 (1998) https://doi.org/10.1063/1.122045

Abstract

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Thermal stability of W and ${WSi}_{x}$ contacts on $p- GaN$

X. A. Cao; S. J. Pearton; F. Ren; J. R. Lothian

Appl. Phys. Lett. 73, 942–944 (1998) https://doi.org/10.1063/1.122046

Abstract

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Hydrogen passivation of silicon carbide by low-energy ion implantation

N. Achtziger; J. Grillenberger; W. Witthuhn; M. K. Linnarsson; M. Janson; B. G. Svensson

Appl. Phys. Lett. 73, 945–947 (1998) https://doi.org/10.1063/1.122047

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The Meyer–Neldel rule in fullerenes

J. C. Wang; Y. F. Chen

Appl. Phys. Lett. 73, 948–950 (1998) https://doi.org/10.1063/1.122048

Abstract

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Dynamic self-organization of strained islands during SiGe epitaxial growth

J. A. Floro; E. Chason; M. B. Sinclair; L. B. Freund; G. A. Lucadamo

Appl. Phys. Lett. 73, 951–953 (1998) https://doi.org/10.1063/1.122049

Abstract

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Model of leakage characteristics of ${(Ba, Sr)TiO}_{3}$ thin films

S. Maruno; T. Kuroiwa; N. Mikami; K. Sato; S. Ohmura; M. Kaida; T. Yasue; T. Koshikawa

Appl. Phys. Lett. 73, 954–956 (1998) https://doi.org/10.1063/1.122050

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Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces

C. Chauvet; P. Venneguès; P. Brunet; E. Tournié; J. P. Faurie

Appl. Phys. Lett. 73, 957–959 (1998) https://doi.org/10.1063/1.122051

Abstract

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Thermal stability of GaN investigated by Raman scattering

M. Kuball; F. Demangeot; J. Frandon; M. A. Renucci; J. Massies; N. Grandjean; R. L. Aulombard; O. Briot

Appl. Phys. Lett. 73, 960–962 (1998) https://doi.org/10.1063/1.122052

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Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector

S. Kim; H. Mohseni; M. Erdtmann; E. Michel; C. Jelen; M. Razeghi

Appl. Phys. Lett. 73, 963–965 (1998) https://doi.org/10.1063/1.122053

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Vacancy ordering of ${Ga}_{2} {Se}_{3}$ at GaSe/GaAs(100) interface

Z. R. Dai; F. S. Ohuchi

Appl. Phys. Lett. 73, 966–968 (1998) https://doi.org/10.1063/1.122054

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Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

L. Harris; D. J. Mowbray; M. S. Skolnick; M. Hopkinson; G. Hill

Appl. Phys. Lett. 73, 969–971 (1998) https://doi.org/10.1063/1.122055

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Nonlinear electron transport characteristics in ultrathin wires of recrystallized hydrogenated amorphous silicon

V. Ng; H. Ahmed; T. Shimada

Appl. Phys. Lett. 73, 972–974 (1998) https://doi.org/10.1063/1.122056

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Electrical characterization of GaN $p-n$ junctions with and without threading dislocations

P. Kozodoy; J. P. Ibbetson; H. Marchand; P. T. Fini; S. Keller; J. S. Speck; S. P. DenBaars; U. K. Mishra

Appl. Phys. Lett. 73, 975–977 (1998) https://doi.org/10.1063/1.122057

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High gain GaN/AlGaN heterojunction phototransistor

Wei Yang; Thomas Nohava; Subash Krishnankutty; Robert Torreano; Scott McPherson; Holly Marsh

Appl. Phys. Lett. 73, 978–980 (1998) https://doi.org/10.1063/1.122058

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Strong excitonic recombination radiation from homoepitaxial diamond thin films at room temperature

Hideyuki Watanabe; Kazushi Hayashi; Daisuke Takeuchi; Sadanori Yamanaka; Hideyo Okushi; Koji Kajimura; Takashi Sekiguchi

Appl. Phys. Lett. 73, 981–983 (1998) https://doi.org/10.1063/1.122059

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SUPERCONDUCTORS

Microwave electric-field imaging using a high- $T_{c}$ scanning superconducting quantum interference device

S. Chatraphorn; E. F. Fleet; R. C. Black; F. C. Wellstood

Appl. Phys. Lett. 73, 984–986 (1998) https://doi.org/10.1063/1.122060

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Influence of the number of deposited atoms per shuttering cycle on surface morphology of sequentially deposited ${Pb}_{2} {Sr}_{2} {EuCu}_{3} O_{y}$ films

Yuichi Motoi; Sumio Ikegawa

Appl. Phys. Lett. 73, 987–989 (1998) https://doi.org/10.1063/1.122061

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High-performance ${(Hg, Re)Ba}_{2} {CaCu}_{2} O_{y}$ grain-boundary Josephson junctions and dc superconducting quantum interference devices

A. Tsukamoto; K. Takagi; Y. Moriwaki; T. Sugano; S. Adachi; K. Tanabe

Appl. Phys. Lett. 73, 990–992 (1998) https://doi.org/10.1063/1.122062

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Field-dependent microsusceptometry on magnetic crystallites with integrated dc SQUIDs

L. R. Narasimhan; C. K. N. Patel; M. B. Ketchen

Appl. Phys. Lett. 73, 993–995 (1998) https://doi.org/10.1063/1.122063

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${Nb/Al/AlO}_{x} / {AlO}_{x} / Al/Nb$ Josephson junctions for programmable voltage standards

H. Schulze; R. Behr; F. Müller; J. Niemeyer

Appl. Phys. Lett. 73, 996–998 (1998) https://doi.org/10.1063/1.122064

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MAGNETISM

Effect of crystallinity on the magnetoresistive properties of ${La}_{0.8} {MnO}_{3−δ}$ thin films grown by chemical vapor deposition

S. Pignard; H. Vincent; J. P. Sénateur; K. Fröhlich; J. Šouc

Appl. Phys. Lett. 73, 999–1001 (1998) https://doi.org/10.1063/1.122065

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Giant magnetoresistance in multilayers electrodeposited on $n- Si$

A. P. O’Keeffe; O. I. Kasyutich; W. Schwarzacher; L. S. de Oliveira; A. A. Pasa

Appl. Phys. Lett. 73, 1002–1004 (1998) https://doi.org/10.1063/1.122066

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Reentrant metal–insulator-type transition induced by high fluence chromium ion implantation of ${La}_{0.7} {Ca}_{0.3} {MnO}_{3}$ thin films

L. F. Cohen; P. S. I. P. N. de Silva; N. Malde; A. K. M. Akther Hossain; K. A. Thomas; R. Chater; J. D. MacManus-Driscoll; T. Tate; N. D. Mathur; M. G. Blamire; J. E. Evetts

Appl. Phys. Lett. 73, 1005–1007 (1998) https://doi.org/10.1063/1.122067

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Temperature and bias dependence of magnetoresistance in doped manganite thin film trilayer junctions

J. Z. Sun; D. W. Abraham; K. Roche; S. S. P. Parkin

Appl. Phys. Lett. 73, 1008–1010 (1998) https://doi.org/10.1063/1.122068

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Issues

OPTICS

ACOUSTICS

FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

SEMICONDUCTORS

SUPERCONDUCTORS

MAGNETISM

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