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Volume 73, Issue 5

3 August 1998

All Issues

ISSN 0003-6951

EISSN 1077-3118

In this Issue

OPTICS
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
SEMICONDUCTORS
SUPERCONDUCTORS
MAGNETISM

OPTICS

The role of the solvent viscosity on the spatiotemporal instabilities of large aperture dye lasers

Oscar G. Calderón; I. Leyva; J. M. Guerra

Appl. Phys. Lett. 73, 557–559 (1998) https://doi.org/10.1063/1.121854

Abstract

View articletitled, The role of the solvent viscosity on the spatiotemporal instabilities of large aperture dye lasers

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Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells

T. J. Schmidt; Yong-Hoon Cho; G. H. Gainer; J. J. Song; S. Keller; U. K. Mishra; S. P. DenBaars

Appl. Phys. Lett. 73, 560–562 (1998) https://doi.org/10.1063/1.121855

Abstract

View articletitled, Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells

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Epitaxial structuring of blue light-emitting p-phenylene oligomers

Tatsuo Mikami; Hisao Yanagi

Appl. Phys. Lett. 73, 563–565 (1998) https://doi.org/10.1063/1.121856

Abstract

View articletitled, Epitaxial structuring of blue light-emitting p-phenylene oligomers

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Photon-spin controlled lasing oscillation in surface-emitting lasers

H. Ando; T. Sogawa; H. Gotoh

Appl. Phys. Lett. 73, 566–568 (1998) https://doi.org/10.1063/1.121857

Abstract

View articletitled, Photon-spin controlled lasing oscillation in surface-emitting lasers

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Hot carrier induced picosecond dynamics of a vertical cavity surface emitting laser: Influence of transverse effects

O. D. Mücke; M. Wegener

Appl. Phys. Lett. 73, 569–571 (1998) https://doi.org/10.1063/1.121858

Abstract

View articletitled, Hot carrier induced picosecond dynamics of a vertical cavity surface emitting laser: Influence of transverse effects

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Second harmonic generation in laser ablated zinc oxide thin films

H. Cao; J. Y. Wu; H. C. Ong; J. Y. Dai; R. P. H. Chang

Appl. Phys. Lett. 73, 572–574 (1998) https://doi.org/10.1063/1.121859

Abstract

View articletitled, Second harmonic generation in laser ablated zinc oxide thin films

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1.35 W of stable single-frequency emission from an external-cavity tapered oscillator utilizing fiber Bragg grating feedback

A. K. Goyal; P. Gavrilovic; H. Po

Appl. Phys. Lett. 73, 575–577 (1998) https://doi.org/10.1063/1.121860

Abstract

View articletitled, 1.35 W of stable single-frequency emission from an external-cavity tapered oscillator utilizing fiber Bragg grating feedback

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Optical temperature sensing using upconversion fluorescence emission in ${Er}^{3+} {/Yb}^{3+}$ -codoped chalcogenide glass

P. V. dos Santos; M. T. de Araujo; A. S. Gouveia-Neto; J. A. Medeiros Neto; A. S. B. Sombra

Appl. Phys. Lett. 73, 578–580 (1998) https://doi.org/10.1063/1.121861

Abstract

View articletitled, Optical temperature sensing using upconversion fluorescence emission in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup><msup xmlns=""><mi mathvariant="normal">/Yb</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math>-codoped chalcogenide glass

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Distance measurements using a noisy white light interferometer

Moshe Ben-Chorin; Silvia Chuartzman; Yehiam Prior

Appl. Phys. Lett. 73, 581–583 (1998) https://doi.org/10.1063/1.121862

Abstract

View articletitled, Distance measurements using a noisy white light interferometer

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Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation

M. Kühnelt; T. Leichtner; S. Kaiser; B. Hahn; H. P. Wagner; D. Eisert; G. Bacher; A. Forchel

Appl. Phys. Lett. 73, 584–586 (1998) https://doi.org/10.1063/1.121863

Abstract

View articletitled, Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation

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0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating

M. P. Nesnidal; T. Earles; L. J. Mawst; D. Botez; J. Buus

Appl. Phys. Lett. 73, 587–589 (1998) https://doi.org/10.1063/1.121864

Abstract

View articletitled, 0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating

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Voltage-controlled lasing pixels for projection display

Joel A. Firehammer; Gregory P. Crawford; Nabil M. Lawandy

Appl. Phys. Lett. 73, 590–592 (1998) https://doi.org/10.1063/1.121865

Abstract

View articletitled, Voltage-controlled lasing pixels for projection display

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Growth and second harmonic generation characterization of ${Er}^{3+}$ doped bulk periodically poled ${LiNbO}_{3}$

V. Bermúdez; J. Capmany; J. Garcı́a Solé; E. Diéguez

Appl. Phys. Lett. 73, 593–595 (1998) https://doi.org/10.1063/1.121866

Abstract

View articletitled, Growth and second harmonic generation characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> doped bulk periodically poled <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Size dependence of transverse mode structure in oxide-confined vertical-cavity laser diodes

S. P. Hegarty; G. Huyet; J. G. McInerney; K. D. Choquette; K. M. Geib; H. Q. Hou

Appl. Phys. Lett. 73, 596–598 (1998) https://doi.org/10.1063/1.121867

Abstract

View articletitled, Size dependence of transverse mode structure in oxide-confined vertical-cavity laser diodes

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Influence of roughness and interdiffusion in zone plate structures on the diffraction efficiency described by coupled wave theory

G. Schneider

Appl. Phys. Lett. 73, 599–601 (1998) https://doi.org/10.1063/1.121868

Abstract

View articletitled, Influence of roughness and interdiffusion in zone plate structures on the diffraction efficiency described by coupled wave theory

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CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates

J. J. Lee; J. D. Kim; M. Razeghi

Appl. Phys. Lett. 73, 602–604 (1998) https://doi.org/10.1063/1.121869

Abstract

View articletitled, Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates

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Analysis of terrace size fluctuations of B-induced stripe structures on the Si (001) surface

Ken Fujita; Masakazu Ichikawa

Appl. Phys. Lett. 73, 605–607 (1998) https://doi.org/10.1063/1.121870

Abstract

View articletitled, Analysis of terrace size fluctuations of B-induced stripe structures on the Si (001) surface

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Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates

M. Fatemi; A. E. Wickenden; D. D. Koleske; M. E. Twigg; J. A. Freitas, Jr.; R. L. Henry; R. J. Gorman

Appl. Phys. Lett. 73, 608–610 (1998) https://doi.org/10.1063/1.121871

Abstract

View articletitled, Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates

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Contrast mechanisms in scanning ion microscope imaging for metals

Y. Sakai; T. Yamada; T. Suzuki; T. Sato; H. Itoh; T. Ichinokawa

Appl. Phys. Lett. 73, 611–613 (1998) https://doi.org/10.1063/1.121872

Abstract

View articletitled, Contrast mechanisms in scanning ion microscope imaging for metals

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Relationships between hardness, elastic modulus, and the work of indentation

Yang-Tse Cheng; Che-Min Cheng

Appl. Phys. Lett. 73, 614–616 (1998) https://doi.org/10.1063/1.121873

Abstract

View articletitled, Relationships between hardness, elastic modulus, and the work of indentation

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Hard hydrogenated carbon films with low stress

R. G. Lacerda; F. C. Marques

Appl. Phys. Lett. 73, 617–619 (1998) https://doi.org/10.1063/1.121874

Abstract

View articletitled, Hard hydrogenated carbon films with low stress

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Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples

Jian-hong Zhu; K. Brunner; G. Abstreiter

Appl. Phys. Lett. 73, 620–622 (1998) https://doi.org/10.1063/1.121875

Abstract

View articletitled, Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples

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Photoacoustic phase transition of the ceramic ${BaTiO}_{3}$

R. Castañeda-Guzmán; M. Villagrán-Muniz; J. M. Saniger-Blesa; O. Pérez-Martı́nez

Appl. Phys. Lett. 73, 623–625 (1998) https://doi.org/10.1063/1.121876

Abstract

View articletitled, Photoacoustic phase transition of the ceramic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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SEMICONDUCTORS

The Ge–C local mode in epitaxial GeC and Ge-rich GeSiC alloys

W. H. Weber; B.-K. Yang; M. Krishnamurthy

Appl. Phys. Lett. 73, 626–628 (1998) https://doi.org/10.1063/1.121877

Abstract

View articletitled, The Ge–C local mode in epitaxial GeC and Ge-rich GeSiC alloys

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High brightness and efficiency blue light-emitting polymer diodes

A. W. Grice; D. D. C. Bradley; M. T. Bernius; M. Inbasekaran; W. W. Wu; E. P. Woo

Appl. Phys. Lett. 73, 629–631 (1998) https://doi.org/10.1063/1.121878

Abstract

View articletitled, High brightness and efficiency blue light-emitting polymer diodes

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Thickness dependence of the effective dielectric constant in a thin film capacitor

Kenji Natori; Daijiro Otani; Nobuyuki Sano

Appl. Phys. Lett. 73, 632–634 (1998) https://doi.org/10.1063/1.121930

Abstract

View articletitled, Thickness dependence of the effective dielectric constant in a thin film capacitor

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Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures

Masahiro Yoshita; Takeaki Sasaki; Motoyoshi Baba; Hidefumi Akiyama

Appl. Phys. Lett. 73, 635–637 (1998) https://doi.org/10.1063/1.121931

Abstract

View articletitled, Application of solid immersion lens to high-spatial resolution photoluminescence imaging of GaAs quantum wells at low temperatures

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Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy

X. H. Shi; S. Rujirawat; R. Ashokan; C. H. Grein; S. Sivananthan

Appl. Phys. Lett. 73, 638–640 (1998) https://doi.org/10.1063/1.121932

Abstract

View articletitled, Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy

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Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

C. K. Shu; J. Ou; H. C. Lin; W. K. Chen; M. C. Lee

Appl. Phys. Lett. 73, 641–643 (1998) https://doi.org/10.1063/1.121933

Abstract

View articletitled, Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

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Infrared study of light-induced reactivation of neutralized dopants in hydrogenated n-type GaAs doped with silicon

D. Loridant-Bernard; S. Mezière; M. Constant; N. Dupuy; B. Sombret; J. Chevallier

Appl. Phys. Lett. 73, 644–646 (1998) https://doi.org/10.1063/1.121934

Abstract

View articletitled, Infrared study of light-induced reactivation of neutralized dopants in hydrogenated n-type GaAs doped with silicon

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Deep-level transient spectroscopy of ${Si/Si}_{1−x−y} {Ge}_{x} C_{y}$ heterostructures

B. L. Stein; E. T. Yu; E. T. Croke; A. T. Hunter; T. Laursen; J. W. Mayer; C. C. Ahn

Appl. Phys. Lett. 73, 647–649 (1998) https://doi.org/10.1063/1.121935

Abstract

View articletitled, Deep-level transient spectroscopy of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mtext>1−x−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>y</mi></mrow></msub></math> heterostructures

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Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor

B. Mishori; M. Leibovitch; Yoram Shapira; Fred.-H. Pollak; Dwight C. Streit; Michael Wojtowicz

Appl. Phys. Lett. 73, 650–652 (1998) https://doi.org/10.1063/1.121936

Abstract

View articletitled, Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor

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Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes

Binghui Li; Lihui Cao; Jian H. Zhao

Appl. Phys. Lett. 73, 653–655 (1998) https://doi.org/10.1063/1.121937

Abstract

View articletitled, Evaluation of damage induced by inductively coupled plasma etching of 6H–SiC using Au Schottky barrier diodes

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Optical creation of a metastable two-dimensional electron gas in a ZnSe/BeTe quantum structure

S. Lovisa; R. T. Cox; T. Baron; M. Keim; A. Waag; G. Landwehr

Appl. Phys. Lett. 73, 656–658 (1998) https://doi.org/10.1063/1.121938

Abstract

View articletitled, Optical creation of a metastable two-dimensional electron gas in a ZnSe/BeTe quantum structure

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Carbon-induced germanium dots: Kinetically-limited islanding process prevents coherent vertical alignment

O. G. Schmidt; S. Schieker; K. Eberl; O. Kienzle; F. Ernst

Appl. Phys. Lett. 73, 659–661 (1998) https://doi.org/10.1063/1.121939

Abstract

View articletitled, Carbon-induced germanium dots: Kinetically-limited islanding process prevents coherent vertical alignment

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Molecular level alignment at organic semiconductor-metal interfaces

I. G. Hill; A. Rajagopal; A. Kahn; Y. Hu

Appl. Phys. Lett. 73, 662–664 (1998) https://doi.org/10.1063/1.121940

Abstract

View articletitled, Molecular level alignment at organic semiconductor-metal interfaces

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Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

R. Driad; Z. H. Lu; S. Charbonneau; W. R. McKinnon; S. Laframboise; P. J. Poole; S. P. McAlister

Appl. Phys. Lett. 73, 665–667 (1998) https://doi.org/10.1063/1.121941

Abstract

View articletitled, Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

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Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

J. L. Rouviere; J. L. Weyher; M. Seelmann-Eggebert; S. Porowski

Appl. Phys. Lett. 73, 668–670 (1998) https://doi.org/10.1063/1.121942

Abstract

View articletitled, Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

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Permittivity of GaAs epilayers containing arsenic precipitates

A. Vasudevan; S. Carin; M. R. Melloch; E. S. Harmon

Appl. Phys. Lett. 73, 671–673 (1998) https://doi.org/10.1063/1.121943

Abstract

View articletitled, Permittivity of GaAs epilayers containing arsenic precipitates

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Chemical kinetics of mobile-proton generation and annihilation in ${SiO}_{2}$ thin films

K. Vanheusden; W. L. Warren; D. M. Fleetwood; J. R. Schwank; M. R. Shaneyfelt; B. L. Draper; P. S. Winokur; R. A. B. Devine; L. B. Archer; G. A. Brown; R. M. Wallace

Appl. Phys. Lett. 73, 674–676 (1998) https://doi.org/10.1063/1.121944

Abstract

View articletitled, Chemical kinetics of mobile-proton generation and annihilation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films

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Transmission electron microscopy study of Si nanowires

Guang Wen Zhou; Ze Zhang; Zhi Gang Bai; Sun Qi Feng; Da Peng Yu

Appl. Phys. Lett. 73, 677–679 (1998) https://doi.org/10.1063/1.121945

Abstract

View articletitled, Transmission electron microscopy study of Si nanowires

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SUPERCONDUCTORS

Terahertz NbN/AlN/NbN mixers with Al/SiO/NbN microstrip tuning circuits

Yoshinori Uzawa; Zhen Wang; Akira Kawakami

Appl. Phys. Lett. 73, 680–682 (1998) https://doi.org/10.1063/1.121946

Abstract

View articletitled, Terahertz NbN/AlN/NbN mixers with Al/SiO/NbN microstrip tuning circuits

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Properties of superconducting ${Nd}_{1+x} {Ba}_{2−x} {Cu}_{3} O_{7−δ}$ thin films deposited by dc magnetron sputtering

M. Salluzzo; I. Maggio-Aprile; O/. Fischer

Appl. Phys. Lett. 73, 683–685 (1998) https://doi.org/10.1063/1.121947

Abstract

View articletitled, Properties of superconducting <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>1+x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>2−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7−δ</mi></mrow></msub></math> thin films deposited by dc magnetron sputtering

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Submillimeter-band high-power generation using multilayered Josephson junctions

A. V. Ustinov; S. Sakai

Appl. Phys. Lett. 73, 686–688 (1998) https://doi.org/10.1063/1.121948

Abstract

View articletitled, Submillimeter-band high-power generation using multilayered Josephson junctions

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MAGNETISM

Positive giant magnetoresistance in a ${Fe}_{3} O_{4} {/SrTiO}_{3} {/La}_{0.7} {Sr}_{0.3} {MnO}_{3}$ heterostructure

K. Ghosh; S. B. Ogale; S. P. Pai; M. Robson; Eric Li; I. Jin; Zi-wen Dong; R. L. Greene; R. Ramesh; T. Venkatesan; M. Johnson

Appl. Phys. Lett. 73, 689–691 (1998) https://doi.org/10.1063/1.121949

Abstract

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Magnetostriction in $({Ce}_{x} {Tb}_{1−x})_{0.5} \Pr_{0.5} {Fe}_{2}$ compounds

Chengchun Tang; Jiang Du; Yangxian Li; Fangwei Wang; Guanghen Wu; Wenshan Zhan; Jingping Qu

Appl. Phys. Lett. 73, 692–694 (1998) https://doi.org/10.1063/1.121950

Abstract

View articletitled, Magnetostriction in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Tb</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> compounds

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Effect of in-plane epitaxy on magnetotransport properties of $({La}_{0.5} {Sr}_{0.5}) {CoO}_{3}$ thin films

C. Kwon; Y. Gim; Y. Fan; M. F. Hundley; J. M. Roper; P. N. Arendt; Q. X. Jia

Appl. Phys. Lett. 73, 695–697 (1998) https://doi.org/10.1063/1.121951

Abstract

View articletitled, Effect of in-plane epitaxy on magnetotransport properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">CoO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

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Magnetoresistance of ferromagnetic tunnel junctions with ${Al}_{2} O_{3}$ barriers formed by rf sputter etching in ${Ar/O}_{2}$ plasma

J. Nassar; M. Hehn; A. Vaurès; F. Petroff; A. Fert

Appl. Phys. Lett. 73, 698–700 (1998) https://doi.org/10.1063/1.121952

Abstract

View articletitled, Magnetoresistance of ferromagnetic tunnel junctions with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> barriers formed by rf sputter etching in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ar/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma

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