Skip Nav Destination

Issues

Select Decade

Select Year

Issue

OPTICS

A fast-response and short-wavelength nonlinear optical chromophore for a photorefractive composite

Zhijian Chen; Feng Wang; Cong Yao; Zhiwen Huang; Qihuang Gong; Yiwang Chen; Huiying Chen

Appl. Phys. Lett. 73, 3629–3631 (1998) https://doi.org/10.1063/1.122844

Abstract

View articletitled, A fast-response and short-wavelength nonlinear optical chromophore for a photorefractive composite

Open the PDF for in another window

Broadband optical limiting with multiwalled carbon nanotubes

X. Sun; R. Q. Yu; G. Q. Xu; T. S. A. Hor; W. Ji

Appl. Phys. Lett. 73, 3632–3634 (1998) https://doi.org/10.1063/1.122845

Abstract

View articletitled, Broadband optical limiting with multiwalled carbon nanotubes

Open the PDF for in another window

Modulation of second harmonic generation in photochromic materials by the application of electric fields and low intensity light

M. C. J. Large; F. Kajzar; P. Raimond

Appl. Phys. Lett. 73, 3635–3637 (1998) https://doi.org/10.1063/1.122846

Abstract

View articletitled, Modulation of second harmonic generation in photochromic materials by the application of electric fields and low intensity light

Open the PDF for in another window

Two-photon transitions between bound-to-continuum states in AlGaAs/GaAs multiple quantum well

Jin U. Kang; Jacob B. Khurgin; C. C. Yang; H. H. Lin; George I. Stegeman

Appl. Phys. Lett. 73, 3638–3640 (1998) https://doi.org/10.1063/1.122847

Abstract

View articletitled, Two-photon transitions between bound-to-continuum states in AlGaAs/GaAs multiple quantum well

Open the PDF for in another window

J-aggregate electroluminescence in dye doped polymer layers

E. I. Mal’tsev; D. A. Lypenko; B. I. Shapiro; M. A. Brusentseva; V. I. Berendyaev; B. V. Kotov; A. V. Vannikov

Appl. Phys. Lett. 73, 3641–3643 (1998) https://doi.org/10.1063/1.122848

Abstract

View articletitled, J-aggregate electroluminescence in dye doped polymer layers

Open the PDF for in another window

Single-sided alignment of electroclinic liquid crystals for active matrix displays

A. Hermanns; C. M. Wilson; J. Y. Patel; J. W. Naciri; J. R. Lindle; B. R. Ratna

Appl. Phys. Lett. 73, 3644–3646 (1998) https://doi.org/10.1063/1.122849

Abstract

View articletitled, Single-sided alignment of electroclinic liquid crystals for active matrix displays

Open the PDF for in another window

Effect of hydrogenation on room-temperature 1.54 μm ${Er}^{3+}$ photoluminescent properties of erbium-doped silicon-rich silicon oxide

Jung H. Shin; Se-young Seo; Seok-Ju Lee

Appl. Phys. Lett. 73, 3647–3649 (1998) https://doi.org/10.1063/1.122850

Abstract

View articletitled, Effect of hydrogenation on room-temperature 1.54 μm <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> photoluminescent properties of erbium-doped silicon-rich silicon oxide

Open the PDF for in another window

Low temperature periodic electrical poling of flux-grown ${KTiOPO}_{4}$ and isomorphic crystals

G. Rosenman; A. Skliar; D. Eger; M. Oron; M. Katz

Appl. Phys. Lett. 73, 3650–3652 (1998) https://doi.org/10.1063/1.122851

Abstract

View articletitled, Low temperature periodic electrical poling of flux-grown <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KTiOPO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> and isomorphic crystals

Open the PDF for in another window

Highly reflective ${GaN/Al}_{0.34} {Ga}_{0.66} N$ quarter-wave reflectors grown by metal organic chemical vapor deposition

T. Someya; Y. Arakawa

Appl. Phys. Lett. 73, 3653–3655 (1998) https://doi.org/10.1063/1.122852

Abstract

View articletitled, Highly reflective <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaN/Al</mi><mrow><mi mathvariant="normal">0.34</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.66</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> quarter-wave reflectors grown by metal organic chemical vapor deposition

Open the PDF for in another window

Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao; Y. G. Zhao; H. C. Ong; S. T. Ho; J. Y. Dai; J. Y. Wu; R. P. H. Chang

Appl. Phys. Lett. 73, 3656–3658 (1998) https://doi.org/10.1063/1.122853

Abstract

View articletitled, Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

Open the PDF for in another window

Blue-light laser source by sum-frequency mixing in ${Nd:YAl}_{3} {(BO}_{3})_{4}$

D. Jaque; J. Capmany; F. Molero; J. García Solé

Appl. Phys. Lett. 73, 3659–3661 (1998) https://doi.org/10.1063/1.122854

Abstract

View articletitled, Blue-light laser source by sum-frequency mixing in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd:YAl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">(BO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

Open the PDF for in another window

FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

MeV γ-ray yield from solid targets irradiated with fs-laser pulses

C. Gahn; G. Pretzler; A. Saemann; G. D. Tsakiris; K. J. Witte; D. Gassmann; T. Schätz; U. Schramm; P. Thirolf; D. Habs

Appl. Phys. Lett. 73, 3662–3664 (1998) https://doi.org/10.1063/1.122855

Abstract

View articletitled, MeV γ-ray yield from solid targets irradiated with fs-laser pulses

Open the PDF for in another window

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Newtonian to non-Newtonian master flow curves of a bulk glass alloy ${Pd}_{40} {Ni}_{10} {Cu}_{30} P_{20}$

Hidemi Kato; Yoshihito Kawamura; Akihisa Inoue; H. S. Chen

Appl. Phys. Lett. 73, 3665–3667 (1998) https://doi.org/10.1063/1.122856

Abstract

Open the PDF for in another window

Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating

N. S. Xu; J. C. She; S. E. Huq; J. Chen; S. Z. Deng

Appl. Phys. Lett. 73, 3668–3670 (1998) https://doi.org/10.1063/1.122857

Abstract

View articletitled, Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating

Open the PDF for in another window

Cubic $C_{3} N_{4}$ particles prepared in an induction thermal plasma

Yingguo Peng; Takamasa Ishigaki; Shigeo Horiuchi

Appl. Phys. Lett. 73, 3671–3673 (1998) https://doi.org/10.1063/1.122858

Abstract

View articletitled, Cubic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> particles prepared in an induction thermal plasma

Open the PDF for in another window

Retention characteristics of ${SrBi}_{2} {Ta}_{2} O_{9}$ thin films prepared by metalorganic decomposition

Z. G. Zhang; Y. N. Wang; J. S. Zhu; F. Yan; X. M. Lu; H. M. Shen; J. S. Liu

Appl. Phys. Lett. 73, 3674–3676 (1998) https://doi.org/10.1063/1.122859

Abstract

View articletitled, Retention characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math> thin films prepared by metalorganic decomposition

Open the PDF for in another window

Effect of compression on grain growth in Al films

C. A. Volkert; C. Lingk

Appl. Phys. Lett. 73, 3677–3679 (1998) https://doi.org/10.1063/1.122860

Abstract

View articletitled, Effect of compression on grain growth in Al films

Open the PDF for in another window

Influence of tunneling voltage on the imaging of carbon nanotube rafts by scanning tunneling microscopy

L. P. Biró; P. A. Thiry; Ph. Lambin; C. Journet; P. Bernier; A. A. Lucas

Appl. Phys. Lett. 73, 3680–3682 (1998) https://doi.org/10.1063/1.122861

Abstract

View articletitled, Influence of tunneling voltage on the imaging of carbon nanotube rafts by scanning tunneling microscopy

Open the PDF for in another window

Lead-free high-strain single-crystal piezoelectrics in the alkaline–bismuth–titanate perovskite family

Yet-Ming Chiang; Gregory W. Farrey; Andrey N. Soukhojak

Appl. Phys. Lett. 73, 3683–3685 (1998) https://doi.org/10.1063/1.122862

Abstract

View articletitled, Lead-free high-strain single-crystal piezoelectrics in the alkaline–bismuth–titanate perovskite family

Open the PDF for in another window

SEMICONDUCTORS

Influence of the surface morphology on the yellow and “edge” emissions in wurtzite GaN

M. Godlewski; E. M. Goldys; M. R. Phillips; R. Langer; A. Barski

Appl. Phys. Lett. 73, 3686–3688 (1998) https://doi.org/10.1063/1.122863

Abstract

View articletitled, Influence of the surface morphology on the yellow and “edge” emissions in wurtzite GaN

Open the PDF for in another window

Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

T. J. Schmidt; S. Bidnyk; Yong-Hoon Cho; A. J. Fischer; J. J. Song; S. Keller; U. K. Mishra; S. P. DenBaars

Appl. Phys. Lett. 73, 3689–3691 (1998) https://doi.org/10.1063/1.122864

Abstract

View articletitled, Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

Open the PDF for in another window

Fowler–Nordheim tunneling of holes through thermally grown ${SiO}_{2}$ on $p^{+}$ 6H–SiC

Richard Waters; Bart Van Zeghbroeck

Appl. Phys. Lett. 73, 3692–3694 (1998) https://doi.org/10.1063/1.122865

Abstract

View articletitled, Fowler–Nordheim tunneling of holes through thermally grown <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup></math> 6H–SiC

Open the PDF for in another window

Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation

M. S. Carroll; C-L. Chang; J. C. Sturm; T. Büyüklimanli

Appl. Phys. Lett. 73, 3695–3697 (1998) https://doi.org/10.1063/1.122866

Abstract

View articletitled, Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation

Open the PDF for in another window

Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC

J. Grillenberger; N. Achtziger; F. Günther; W. Witthuhn

Appl. Phys. Lett. 73, 3698–3699 (1998) https://doi.org/10.1063/1.122867

Abstract

View articletitled, Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC

Open the PDF for in another window

Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface

N. Ozaki; Y. Ohno; S. Takeda

Appl. Phys. Lett. 73, 3700–3702 (1998) https://doi.org/10.1063/1.122868

Abstract

View articletitled, Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface

Open the PDF for in another window

Pressure and temperature dependence of the absorption edge of a thick ${Ga}_{0.92} {In}_{0.08} {As}_{0.985} N_{0.015}$ layer

Piotr Perlin; Sudhir G. Subramanya; Dan E. Mars; Joachim Kruger; Noad A. Shapiro; Henrik Siegle; Eicke R. Weber

Appl. Phys. Lett. 73, 3703–3705 (1998) https://doi.org/10.1063/1.122869

Abstract

View articletitled, Pressure and temperature dependence of the absorption edge of a thick <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.92</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.08</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi mathvariant="normal">0.985</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">0.015</mi></mrow></msub></math> layer

Open the PDF for in another window

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Q. D. Zhuang; J. M. Li; H. X. Li; Y. P. Zeng; L. Pan; Y. H. Chen; M. Y. Kong; L. Y. Lin

Appl. Phys. Lett. 73, 3706–3708 (1998) https://doi.org/10.1063/1.122870

Abstract

View articletitled, Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Open the PDF for in another window

Si δ-layers embedded in GaAs

P. O. Holtz; B. Sernelius; A. V. Buyanov; G. Pozina; H. H. Radamson; L. D. Madsen; J. P. McCaffrey; B. Monemar; J. Thordson; T. G. Andersson

Appl. Phys. Lett. 73, 3709–3711 (1998) https://doi.org/10.1063/1.122871

Abstract

View articletitled, Si δ-layers embedded in GaAs

Open the PDF for in another window

Direct tunneling diode structure with a multilayer charge injection barrier

E. M. Dons; C. S. Skowronski; K. R. Farmer

Appl. Phys. Lett. 73, 3712–3714 (1998) https://doi.org/10.1063/1.122872

Abstract

View articletitled, Direct tunneling diode structure with a multilayer charge injection barrier

Open the PDF for in another window

Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

N. Stelmakh; J. Mangeney; A. Alexandrou; E. L. Portnoi

Appl. Phys. Lett. 73, 3715–3717 (1998) https://doi.org/10.1063/1.122873

Abstract

View articletitled, Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

Open the PDF for in another window

Cation vacancy formation and migration in the AlGaAs heterostructure system

P. Mitev; S. Seshadri; L. J. Guido; D. T. Schaafsma; D. H. Christensen

Appl. Phys. Lett. 73, 3718–3720 (1998) https://doi.org/10.1063/1.122874

Abstract

View articletitled, Cation vacancy formation and migration in the AlGaAs heterostructure system

Open the PDF for in another window

Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

M. K. Weldon; M. Collot; Y. J. Chabal; V. C. Venezia; A. Agarwal; T. E. Haynes; D. J. Eaglesham; S. B. Christman; E. E. Chaban

Appl. Phys. Lett. 73, 3721–3723 (1998) https://doi.org/10.1063/1.122875

Abstract

View articletitled, Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Open the PDF for in another window

Far-infrared $(λ=88 μ m)$ electroluminescence in a quantum cascade structure

Michel Rochat; Jérôme Faist; Mattias Beck; Ursula Oesterle; Marc Ilegems

Appl. Phys. Lett. 73, 3724–3726 (1998) https://doi.org/10.1063/1.122895

Abstract

View articletitled, Far-infrared <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(λ=88 μ</mtext><mi mathvariant="normal" xmlns="">m</mi><mi xmlns="">)</mi></math> electroluminescence in a quantum cascade structure

Open the PDF for in another window

Fine structure in the secondary electron emission peak for diamond crystal with (100) negative electron affinity surface

V. M. Asnin; I. L. Krainsky

Appl. Phys. Lett. 73, 3727–3729 (1998) https://doi.org/10.1063/1.122876

Abstract

View articletitled, Fine structure in the secondary electron emission peak for diamond crystal with (100) negative electron affinity surface

Open the PDF for in another window

Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size

T. Riedl; E. Fehrenbacher; A. Hangleiter; M. K. Zundel; K. Eberl

Appl. Phys. Lett. 73, 3730–3732 (1998) https://doi.org/10.1063/1.122877

Abstract

View articletitled, Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size

Open the PDF for in another window

Anomalous high carrier mobility in smectic E phase of a 2-phenylnaphthalene derivative

Masahiro Funahashi; Jun-ichi Hanna

Appl. Phys. Lett. 73, 3733–3735 (1998) https://doi.org/10.1063/1.122896

Abstract

View articletitled, Anomalous high carrier mobility in smectic E phase of a 2-phenylnaphthalene derivative

Open the PDF for in another window

Strain relaxation in InAs/GaSb heterostructures

Brian R. Bennett

Appl. Phys. Lett. 73, 3736–3738 (1998) https://doi.org/10.1063/1.122878

Abstract

View articletitled, Strain relaxation in InAs/GaSb heterostructures

Open the PDF for in another window

Highly efficient electron emission from diode-type plane emitters using chemical-vapor-deposited single-crystalline diamond

Toshimichi Ito; Masaki Nishimura; Akimitsu Hatta

Appl. Phys. Lett. 73, 3739–3741 (1998) https://doi.org/10.1063/1.122879

Abstract

View articletitled, Highly efficient electron emission from diode-type plane emitters using chemical-vapor-deposited single-crystalline diamond

Open the PDF for in another window

Effect of heating rate on positive-temperature-coefficient-of-resistivity behavior of conductive composite thin films

S. Hirano; A. Kishimoto

Appl. Phys. Lett. 73, 3742–3744 (1998) https://doi.org/10.1063/1.122880

Abstract

View articletitled, Effect of heating rate on positive-temperature-coefficient-of-resistivity behavior of conductive composite thin films

Open the PDF for in another window

Electrical characterization of two deep electron traps introduced in epitaxially grown $n- GaN$ during He-ion irradiation

F. D. Auret; S. A. Goodman; F. K. Koschnick; J-M. Spaeth; B. Beaumont; P. Gibart

Appl. Phys. Lett. 73, 3745–3747 (1998) https://doi.org/10.1063/1.122881

Abstract

View articletitled, Electrical characterization of two deep electron traps introduced in epitaxially grown <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> during He-ion irradiation

Open the PDF for in another window

{311} defects in silicon: The source of the loops

Jinghong Li; Kevin S. Jones

Appl. Phys. Lett. 73, 3748–3750 (1998) https://doi.org/10.1063/1.122882

Abstract

View articletitled, {311} defects in silicon: The source of the loops

Open the PDF for in another window

A mechanically flexible tunneling contact operating at radio frequencies

A. Erbe; R. H. Blick; A. Tilke; A. Kriele; J. P. Kotthaus

Appl. Phys. Lett. 73, 3751–3753 (1998) https://doi.org/10.1063/1.122883

Abstract

View articletitled, A mechanically flexible tunneling contact operating at radio frequencies

Open the PDF for in another window

Nitrogen radical adsorption on InAs (001) surface studied by scanning tunneling microscopy and x-ray photoelectronic spectroscopy

M. Kasu; N. Kobayashi; H. Tanaka; O. Mikami

Appl. Phys. Lett. 73, 3754–3756 (1998) https://doi.org/10.1063/1.122884

Abstract

View articletitled, Nitrogen radical adsorption on InAs (001) surface studied by scanning tunneling microscopy and x-ray photoelectronic spectroscopy

Open the PDF for in another window

Zero-dimensional excitonic properties of self-organized quantum dots of CdTe grown by molecular beam epitaxy

Yoshikazu Terai; Shinji Kuroda; Kôki Takita; Tsuyoshi Okuno; Yasuaki Masumoto

Appl. Phys. Lett. 73, 3757–3759 (1998) https://doi.org/10.1063/1.122885

Abstract

View articletitled, Zero-dimensional excitonic properties of self-organized quantum dots of CdTe grown by molecular beam epitaxy

Open the PDF for in another window

Magneto-optics of ${InAs/Ga}_{1−x} {In}_{x} Sb$ infrared superlattice diodes

F. Fuchs; E. Ahlswede; U. Weimar; W. Pletschen; J. Schmitz; M. Hartung; B. Jager; F. Szmulowicz

Appl. Phys. Lett. 73, 3760–3762 (1998) https://doi.org/10.1063/1.122886

Abstract

View articletitled, Magneto-optics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">InAs/Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Sb</mi></math> infrared superlattice diodes

Open the PDF for in another window

SUPERCONDUCTORS

Nanocrack junctions in unidirectionally twinned thin films of ${YBa}_{2} {Cu}_{3} O_{7−δ}$ on (001) ${NdGaO}_{3}$

G. Koren; E. Polturak; N. Levy; G. Deutscher; N. D. Zakharov

Appl. Phys. Lett. 73, 3763–3765 (1998) https://doi.org/10.1063/1.122887

Abstract

View articletitled, Nanocrack junctions in unidirectionally twinned thin films of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> on (001) <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NdGaO</mi><mrow><mn>3</mn></mrow></msub></math>

Open the PDF for in another window

MAGNETISM

Micromagnetic tailoring of periodic antidot permalloy arrays for high density storage

L. Torres; L. Lopez-Diaz; J. Iñiguez

Appl. Phys. Lett. 73, 3766–3768 (1998) https://doi.org/10.1063/1.122888

Abstract

View articletitled, Micromagnetic tailoring of periodic antidot permalloy arrays for high density storage

Open the PDF for in another window

Nonlinear magneto-optical Kerr effect and second harmonic generation interferometry in Co–Cu granular films

T. V. Murzina; E. A. Ganshina; S. V. Guschin; T. V. Misuryaev; O. A. Aktsipetrov

Appl. Phys. Lett. 73, 3769–3771 (1998) https://doi.org/10.1063/1.122889

Abstract

View articletitled, Nonlinear magneto-optical Kerr effect and second harmonic generation interferometry in Co–Cu granular films

Open the PDF for in another window

Neutron diffraction evidence for a new ferromagnetic phase in Cr doped $\Pr_{0.5} {Ca}_{0.5} {MnO}_{3}$

F. Damay; C. Martin; A. Maignan; M. Hervieu; B. Raveau; F. Bourée; G. André

Appl. Phys. Lett. 73, 3772–3774 (1998) https://doi.org/10.1063/1.122890

Abstract

View articletitled, Neutron diffraction evidence for a new ferromagnetic phase in Cr doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

Open the PDF for in another window

PAPERS IN OTHER FIELDS

Bulk and surface characterization of a dewetting thin film polymer bilayer

H. Ade; D. A. Winesett; A. P. Smith; S. Anders; T. Stammler; C. Heske; D. Slep; M. H. Rafailovich; J. Sokolov; J. Stöhr

Appl. Phys. Lett. 73, 3775–3777 (1998) https://doi.org/10.1063/1.122891

Abstract

View articletitled, Bulk and surface characterization of a dewetting thin film polymer bilayer

Open the PDF for in another window

An optimal magnetic tip configuration for magnetic-resonance force microscopy of microscale buried features

John A. Marohn; Raúl Fainchtein; Doran D. Smith

Appl. Phys. Lett. 73, 3778–3780 (1998) https://doi.org/10.1063/1.122892

Abstract

View articletitled, An optimal magnetic tip configuration for magnetic-resonance force microscopy of microscale buried features

Open the PDF for in another window

Analytical descriptions of the tapping-mode atomic force microscopy response

Lugen Wang

Appl. Phys. Lett. 73, 3781–3783 (1998) https://doi.org/10.1063/1.122893

Abstract

View articletitled, Analytical descriptions of the tapping-mode atomic force microscopy response

Open the PDF for in another window

A study of electron field emission as a function of film thickness from amorphous carbon films

R. D. Forrest; A. P. Burden; S. R. P. Silva; L. K. Cheah; X. Shi

Appl. Phys. Lett. 73, 3784–3786 (1998) https://doi.org/10.1063/1.122894

Abstract

View articletitled, A study of electron field emission as a function of film thickness from amorphous carbon films

Open the PDF for in another window

Issues

OPTICS

FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

SEMICONDUCTORS

SUPERCONDUCTORS

MAGNETISM

PAPERS IN OTHER FIELDS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only