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Volume 73, Issue 17

26 October 1998

All Issues

ISSN 0003-6951

EISSN 1077-3118

In this Issue

OPTICS
ACOUSTICS
FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
SEMICONDUCTORS
SUPERCONDUCTORS
MAGNETISM
PAPERS IN OTHER FIELDS

OPTICS

Generation of picosecond hard x rays by tera watt laser focusing on a copper target

Masatake Yoshida; Yasushi Fujimoto; Yoichiro Hironaka; Kazutaka G. Nakamura; Ken-ichi Kondo; Masayuki Ohtani; Hiroshi Tsunemi

Appl. Phys. Lett. 73, 2393–2395 (1998) https://doi.org/10.1063/1.122444

Abstract

View articletitled, Generation of picosecond hard x rays by tera watt laser focusing on a copper target

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Two-dimensionally conjugated molecules: The importance of low molecular symmetry for large third-order nonlinear optical effects

U. Gubler; R. Spreiter; Ch. Bosshard; P. Günter; R. R. Tykwinski; F. Diederich

Appl. Phys. Lett. 73, 2396–2398 (1998) https://doi.org/10.1063/1.122445

Abstract

View articletitled, Two-dimensionally conjugated molecules: The importance of low molecular symmetry for large third-order nonlinear optical effects

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High-efficiency, low-drive-voltage, semitransparent stacked organic light-emitting device

G. Gu; V. Khalfin; S. R. Forrest

Appl. Phys. Lett. 73, 2399–2401 (1998) https://doi.org/10.1063/1.122446

Abstract

View articletitled, High-efficiency, low-drive-voltage, semitransparent stacked organic light-emitting device

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Selectable dual-wavelength pulses generated from a laser diode using external feedback from a two-chromatic fiber grating

Y. Zhao; C. Shu

Appl. Phys. Lett. 73, 2402–2404 (1998) https://doi.org/10.1063/1.122447

Abstract

View articletitled, Selectable dual-wavelength pulses generated from a laser diode using external feedback from a two-chromatic fiber grating

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Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN

J. C. Carrano; T. Li; D. L. Brown; P. A. Grudowski; C. J. Eiting; R. D. Dupuis; J. C. Campbell

Appl. Phys. Lett. 73, 2405–2407 (1998) https://doi.org/10.1063/1.122448

Abstract

View articletitled, Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN

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Highly efficient photorefractive polymer-dispersed liquid crystals

A. Golemme; B. Kippelen; N. Peyghambarian

Appl. Phys. Lett. 73, 2408–2410 (1998) https://doi.org/10.1063/1.122449

Abstract

View articletitled, Highly efficient photorefractive polymer-dispersed liquid crystals

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All-optical liquid device derived from negative nonlinear absorption effect in an erbium chloride solution

Yoshinobu Maeda; Yoshiki Akidzuki; Toshikazu Yamada

Appl. Phys. Lett. 73, 2411–2413 (1998) https://doi.org/10.1063/1.122450

Abstract

View articletitled, All-optical liquid device derived from negative nonlinear absorption effect in an erbium chloride solution

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Relationship between optical and structural properties in substituted quaterthiophene crystals

G. Gigli; M. Lomascolo; R. Cingolani; G. Barbarella; M. Zambianchi; L. Antolini; F. Della Sala; A. Di Carlo; P. Lugli

Appl. Phys. Lett. 73, 2414–2416 (1998) https://doi.org/10.1063/1.122451

Abstract

View articletitled, Relationship between optical and structural properties in substituted quaterthiophene crystals

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ACOUSTICS

Electromechanical coupling coefficient for surface acoustic waves in proton-exchanged $128°$ -rotated Y-cut lithium niobate

D. Čiplys; R. Rimeika

Appl. Phys. Lett. 73, 2417–2419 (1998) https://doi.org/10.1063/1.122452

Abstract

View articletitled, Electromechanical coupling coefficient for surface acoustic waves in proton-exchanged <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">128°</mtext></math>-rotated Y-cut lithium niobate

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FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

Relativistic electron-beam generation in a gas-loaded foil-less diode

Bao-Liang Qian; Chuan-Lu Li; Yong-Gui Liu; Jian-De Zhang; Qi-Mei Tan; Jin-Liang Liu; Che-Bo Liu

Appl. Phys. Lett. 73, 2420–2422 (1998) https://doi.org/10.1063/1.122468

Abstract

View articletitled, Relativistic electron-beam generation in a gas-loaded foil-less diode

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CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Diamondlike carbon deposition on silicon using radio-frequency inductive plasma of Ar and $C_{2} H_{2}$ gas mixture in plasma immersion ion deposition

D. H. Lee; X. M. He; K. C. Walter; M. Nastasi; J. R. Tesmer; M. Tuszewski; D. R. Tallant

Appl. Phys. Lett. 73, 2423–2425 (1998) https://doi.org/10.1063/1.122469

Abstract

View articletitled, Diamondlike carbon deposition on silicon using radio-frequency inductive plasma of Ar and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas mixture in plasma immersion ion deposition

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Te substitution in disordered dilute ${Se}_{1−x} {Te}_{x}$ alloys

A. K. Bhatnagar; Vipin Srivastava; K. V. Reddy

Appl. Phys. Lett. 73, 2426–2428 (1998) https://doi.org/10.1063/1.122470

Abstract

View articletitled, Te substitution in disordered dilute <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Se</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mi>x</mi></mrow></msub></math> alloys

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The thickness dependence of the flow stress of capped and uncapped polycrystalline Ag thin films

Mauro J. Kobrinsky; Carl V. Thompson

Appl. Phys. Lett. 73, 2429–2431 (1998) https://doi.org/10.1063/1.122471

Abstract

View articletitled, The thickness dependence of the flow stress of capped and uncapped polycrystalline Ag thin films

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Characterization of pitting corrosion in aluminum films by light scattering

Y.-P. Zhao; C.-F. Cheng; G.-C. Wang; T.-M. Lu

Appl. Phys. Lett. 73, 2432–2434 (1998) https://doi.org/10.1063/1.122472

Abstract

View articletitled, Characterization of pitting corrosion in aluminum films by light scattering

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Site-selective radiation damage of collapsed carbon nanotubes

Vincent H. Crespi; Nasreen G. Chopra; Marvin L. Cohen; A. Zettl; Velimir Radmilovíc

Appl. Phys. Lett. 73, 2435–2437 (1998) https://doi.org/10.1063/1.122473

Abstract

View articletitled, Site-selective radiation damage of collapsed carbon nanotubes

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Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces

Jian-hong Zhu; K. Brunner; G. Abstreiter

Appl. Phys. Lett. 73, 2438–2440 (1998) https://doi.org/10.1063/1.122474

Abstract

View articletitled, Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces

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Octahedral boron nitride fullerenes formed by electron beam irradiation

D. Golberg; Y. Bando; O. Stéphan; K. Kurashima

Appl. Phys. Lett. 73, 2441–2443 (1998) https://doi.org/10.1063/1.122475

Abstract

View articletitled, Octahedral boron nitride fullerenes formed by electron beam irradiation

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SEMICONDUCTORS

Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors

N. B. Lukyanchikova; M. V. Petrichuk; N. P. Garbar; E. Simoen; C. Claeys

Appl. Phys. Lett. 73, 2444–2446 (1998) https://doi.org/10.1063/1.122476

Abstract

View articletitled, Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors

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Single- and multi-wall carbon nanotube field-effect transistors

In Special Collection: APL Classic Papers

R. Martel; T. Schmidt; H. R. Shea; T. Hertel; Ph. Avouris

Appl. Phys. Lett. 73, 2447–2449 (1998) https://doi.org/10.1063/1.122477

Abstract

View articletitled, Single- and multi-wall carbon nanotube field-effect transistors

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Green electroluminescence from Er-doped GaN Schottky barrier diodes

A. J. Steckl; M. Garter; R. Birkhahn; J. Scofield

Appl. Phys. Lett. 73, 2450–2452 (1998) https://doi.org/10.1063/1.122478

Abstract

View articletitled, Green electroluminescence from Er-doped GaN Schottky barrier diodes

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Electrochemical determination of the ionization potential and electron affinity of poly(9,9-dioctylfluorene)

S. Janietz; D. D. C. Bradley; M. Grell; C. Giebeler; M. Inbasekaran; E. P. Woo

Appl. Phys. Lett. 73, 2453–2455 (1998) https://doi.org/10.1063/1.122479

Abstract

View articletitled, Electrochemical determination of the ionization potential and electron affinity of poly(9,9-dioctylfluorene)

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Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon

N. M. J. Conway; A. Ilie; J. Robertson; W. I. Milne; A. Tagliaferro

Appl. Phys. Lett. 73, 2456–2458 (1998) https://doi.org/10.1063/1.122480

Abstract

View articletitled, Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon

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Fluorine diffusion and accumulation in Si step-doped InAlAs layers

A. Wakejima; K. Onda; A. Fujihara; E. Mizuki; M. Kanamori

Appl. Phys. Lett. 73, 2459–2461 (1998) https://doi.org/10.1063/1.122481

Abstract

View articletitled, Fluorine diffusion and accumulation in Si step-doped InAlAs layers

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Elimination of spectral shifts associated with tip-induced band bending in scanning tunneling spectroscopy of lightly doped silicon

Hai-An Lin; Ralph J. Jaccodine; Michael S. Freund

Appl. Phys. Lett. 73, 2462–2464 (1998) https://doi.org/10.1063/1.122482

Abstract

View articletitled, Elimination of spectral shifts associated with tip-induced band bending in scanning tunneling spectroscopy of lightly doped silicon

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Carbon diffusion in silicon

P. Werner; U. Gösele; H.-J. Gossmann; D. C. Jacobson

Appl. Phys. Lett. 73, 2465–2467 (1998) https://doi.org/10.1063/1.122483

Abstract

View articletitled, Carbon diffusion in silicon

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Transport properties of two-dimensional electron gases containing InAs self-assembled dots

G. H. Kim; D. A. Ritchie; M. Pepper; G. D. Lian; J. Yuan; L. M. Brown

Appl. Phys. Lett. 73, 2468–2470 (1998) https://doi.org/10.1063/1.122484

Abstract

View articletitled, Transport properties of two-dimensional electron gases containing InAs self-assembled dots

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Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

Jian-Ping Zhang; Dian-Zhao Sun; Xiao-Liang Wang; Mei-Ying Kong; Yi-Ping Zeng; Jin-Min Li; Lan-Ying Lin

Appl. Phys. Lett. 73, 2471–2472 (1998) https://doi.org/10.1063/1.122485

Abstract

View articletitled, Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

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Nitrogenated tetrahedral amorphous carbon films prepared by ion-beam-assisted filtered cathodic vacuum arc technique for solar cells application

L. K. Cheah; X. Shi; E. Liu; J. R. Shi

Appl. Phys. Lett. 73, 2473–2475 (1998) https://doi.org/10.1063/1.122486

Abstract

View articletitled, Nitrogenated tetrahedral amorphous carbon films prepared by ion-beam-assisted filtered cathodic vacuum arc technique for solar cells application

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Plasma heating in highly excited GaN/AlGaN multiple quantum wells

K. C. Zeng; R. Mair; J. Y. Lin; H. X. Jiang; W. W. Chow; A. Botchkarev; H. Morkoç

Appl. Phys. Lett. 73, 2476–2478 (1998) https://doi.org/10.1063/1.122487

Abstract

View articletitled, Plasma heating in highly excited GaN/AlGaN multiple quantum wells

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Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using ${Ga}_{2} O_{3}$ thin film as a mask material

Cheol Koo Hahn; Young Ju Park; Eun Kyu Kim; Suk-Ki Min; Suk Koo Jung; Jung Ho Park

Appl. Phys. Lett. 73, 2479–2481 (1998) https://doi.org/10.1063/1.122488

Abstract

View articletitled, Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin film as a mask material

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Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide

Hideo Sugiura; Manabu Mitsuhara; Susumu Kondo

Appl. Phys. Lett. 73, 2482–2484 (1998) https://doi.org/10.1063/1.122489

Abstract

View articletitled, Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide

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Multisubband hot-electron transport in GaN-based quantum wells

N. A. Zakhleniuk; C. R. Bennett; B. K. Ridley; M. Babiker

Appl. Phys. Lett. 73, 2485–2487 (1998) https://doi.org/10.1063/1.122490

Abstract

View articletitled, Multisubband hot-electron transport in GaN-based quantum wells

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Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode

V. Gružinskis; J. Liberis; A. Matulionis; P. Sakalas; E. Starikov; P. Shiktorov; B. Szentpáli; V. Van Tuyen; H. L. Hartnagel

Appl. Phys. Lett. 73, 2488–2490 (1998) https://doi.org/10.1063/1.122491

Abstract

View articletitled, Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode

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SUPERCONDUCTORS

Microwave near-field imaging of electric fields in a superconducting microstrip resonator

Ashfaq S. Thanawalla; S. K. Dutta; C. P. Vlahacos; D. E. Steinhauer; B. J. Feenstra; Steven M. Anlage; F. C. Wellstood; Robert B. Hammond

Appl. Phys. Lett. 73, 2491–2493 (1998) https://doi.org/10.1063/1.122492

Abstract

View articletitled, Microwave near-field imaging of electric fields in a superconducting microstrip resonator

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Magnetic field dependence of quasiparticle losses in a superconductor

J. N. Ullom; P. A. Fisher; M. Nahum

Appl. Phys. Lett. 73, 2494–2496 (1998) https://doi.org/10.1063/1.122493

Abstract

View articletitled, Magnetic field dependence of quasiparticle losses in a superconductor

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MAGNETISM

Atomically defined epitaxy and physical properties of strained ${La}_{0.6} {Sr}_{0.4} {MnO}_{3}$ films

M. Izumi; Y. Konishi; T. Nishihara; S. Hayashi; M. Shinohara; M. Kawasaki; Y. Tokura

Appl. Phys. Lett. 73, 2497–2499 (1998) https://doi.org/10.1063/1.122494

Abstract

View articletitled, Atomically defined epitaxy and physical properties of strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.6</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> films

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On the synthesis and magnetic properties of ${Nd(Fe,Mo,Ti)}_{12}$

Q. M. Cheng; J. H. Lin; M. Z. Su

Appl. Phys. Lett. 73, 2500–2502 (1998) https://doi.org/10.1063/1.122495

Abstract

View articletitled, On the synthesis and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd(Fe,Mo,Ti)</mi><mrow><mi mathvariant="normal">12</mi></mrow></msub></math>

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Easy axis distribution in interacting fine-particle systems

R. Iglesias; H. Rubio; S. Suárez

Appl. Phys. Lett. 73, 2503–2505 (1998) https://doi.org/10.1063/1.122496

Abstract

View articletitled, Easy axis distribution in interacting fine-particle systems

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Tunneling-like magnetoresistance in bicrystal ${La}_{0.8} {Sr}_{0.2} {MnO}_{3−δ}$ thin films

K. Steenbeck; T. Eick; K. Kirsch; H.-G. Schmidt; E. Steinbeiß

Appl. Phys. Lett. 73, 2506–2508 (1998) https://doi.org/10.1063/1.122497

Abstract

View articletitled, Tunneling-like magnetoresistance in bicrystal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3−δ</mi></mrow></msub></math> thin films

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Forced magnetostriction in FeZr-based amorphous alloys

J. Arcas; A. Hernando; J. M Barandiarán; M. Schwetz; R. Grössinger

Appl. Phys. Lett. 73, 2509–2511 (1998) https://doi.org/10.1063/1.122498

Abstract

View articletitled, Forced magnetostriction in FeZr-based amorphous alloys

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Site occupancy of Zr in Nd(FeZr)B magnet during hydrogenation disproportionation desorption recombination process

A. Ashfaq; M. Matsuura; M. Sakurai

Appl. Phys. Lett. 73, 2512–2514 (1998) https://doi.org/10.1063/1.122499

Abstract

View articletitled, Site occupancy of Zr in Nd(FeZr)B magnet during hydrogenation disproportionation desorption recombination process

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PAPERS IN OTHER FIELDS

Operation of logic function in a Coulomb blockade device

K. Tsukagoshi; B. W. Alphenaar; K. Nakazato

Appl. Phys. Lett. 73, 2515–2517 (1998) https://doi.org/10.1063/1.122500

Abstract

View articletitled, Operation of logic function in a Coulomb blockade device

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Nonferroelectric epitaxial Sr–Bi–Ta oxide thin film with a high dielectric constant

S. J. Hyun; B. H. Park; S. D. Bu; J. H. Jung; T. W. Noh

Appl. Phys. Lett. 73, 2518–2520 (1998) https://doi.org/10.1063/1.122501

Abstract

View articletitled, Nonferroelectric epitaxial Sr–Bi–Ta oxide thin film with a high dielectric constant

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Laser-induced thermal expansion of a scanning tunneling microscope tip measured with an atomic force microscope cantilever

R. Huber; M. Koch; J. Feldmann

Appl. Phys. Lett. 73, 2521–2523 (1998) https://doi.org/10.1063/1.122502

Abstract

View articletitled, Laser-induced thermal expansion of a scanning tunneling microscope tip measured with an atomic force microscope cantilever

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Electrical field impact on the gas adsorptivity of thin metal oxide films

M. Bögner; A. Fuchs; K. Scharnagl; R. Winter; T. Doll; I. Eisele

Appl. Phys. Lett. 73, 2524–2526 (1998) https://doi.org/10.1063/1.122503

Abstract

View articletitled, Electrical field impact on the gas adsorptivity of thin metal oxide films

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Noncontact nanolithography using the atomic force microscope

Kathryn Wilder; Calvin F. Quate; Dennis Adderton; Robert Bernstein; Virgil Elings

Appl. Phys. Lett. 73, 2527–2529 (1998) https://doi.org/10.1063/1.122504

Abstract

View articletitled, Noncontact nanolithography using the atomic force microscope

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Issues

OPTICS

ACOUSTICS

FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

SEMICONDUCTORS

SUPERCONDUCTORS

MAGNETISM

PAPERS IN OTHER FIELDS

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