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Volume 72, Issue 24

15 June 1998

All Issues

ISSN 0003-6951

EISSN 1077-3118

In this Issue

OPTICS
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
SEMICONDUCTORS
SUPERCONDUCTORS
MAGNETISM
PAPERS IN OTHER FIELDS

OPTICS

Patterning the second-order optical nonlinearity of asymmetric quantum wells by ion implantation enhanced intermixing

S. Janz; M. Buchanan; P. van der Meer; Z. R. Wasilewski; D.-X. Xu; P. Piva; I. V. Mitchell; U. G. Akano; A. Fiore

Appl. Phys. Lett. 72, 3097–3099 (1998) https://doi.org/10.1063/1.121558

Abstract

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A photoconductive, miniature terahertz source

Richard K. Lai; Jiunn-Ren Hwang; Theodore B. Norris; John F. Whitaker

Appl. Phys. Lett. 72, 3100–3102 (1998) https://doi.org/10.1063/1.121559

Abstract

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Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers

Seoung-Hwan Park; Shun-Lien Chuang

Appl. Phys. Lett. 72, 3103–3105 (1998) https://doi.org/10.1063/1.121560

Abstract

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Metalorganic molecular-beam-epitaxy-grown ${In}_{0.77} {Ga}_{0.23} As/InGaAs$ multiple quantum well lasers emitting at 2.07 μm wavelength

Manabu Mitsuhara; Matsuyuki Ogasawara; Mamoru Oishi; Hideo Sugiura

Appl. Phys. Lett. 72, 3106–3108 (1998) https://doi.org/10.1063/1.121561

Abstract

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Dynamics of infrared absorption caused by hydroxyl groups and its effect on refractive index evolution in ultraviolet exposed hydrogen loaded ${GeO}_{2}$ -doped fibers

F. M. Araújo; E. Joanni; M. B. Marques; O. G. Okhotnikov

Appl. Phys. Lett. 72, 3109–3111 (1998) https://doi.org/10.1063/1.121562

Abstract

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Spectrally-resolved near-field investigation of proton implanted vertical cavity surface emitting lasers

Jeongyong Kim; David E. Pride; Joseph T. Boyd; Howard E. Jackson

Appl. Phys. Lett. 72, 3112–3114 (1998) https://doi.org/10.1063/1.121563

Abstract

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High definition aperture probes for near-field optical microscopy fabricated by focused ion beam milling

J. A. Veerman; A. M. Otter; L. Kuipers; N. F. van Hulst

Appl. Phys. Lett. 72, 3115–3117 (1998) https://doi.org/10.1063/1.121564

Abstract

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Reduction of effects of Fabry–Perot fringing in wavelength modulation experiments

A. N. Dharamsi; P. C. Shea; A. M. Bullock

Appl. Phys. Lett. 72, 3118–3120 (1998) https://doi.org/10.1063/1.121565

Abstract

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Optically induced domain waveguides in ${Sr}_{x} {Ba}_{1−x} {Nb}_{2} O_{6}$ crystals

Alexander Bekker; Aviad Peda’el; Naum K. Berger; Moshe Horowitz; Baruch Fischer

Appl. Phys. Lett. 72, 3121–3123 (1998) https://doi.org/10.1063/1.121566

Abstract

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Polarization switching in a tensile-strained InGaAs/InGaAsP multiple quantum well distributed feedback laser diode

Natsuhiko Mizutani; Sei-ichi Miyazawa; Masahiro Nakanishi; Masao Majima; Jun Nitta; Yoshinobu Sekiguchi; Hidetoshi Nojiri; Yuichi Handa

Appl. Phys. Lett. 72, 3124–3126 (1998) https://doi.org/10.1063/1.121567

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Green photoluminescence from Er-containing amorphous SiN thin films

A. R. Zanatta; L. A. O. Nunes

Appl. Phys. Lett. 72, 3127–3129 (1998) https://doi.org/10.1063/1.121568

Abstract

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High-power $λ≈8 μ m$ quantum cascade lasers with near optimum performance

Claire Gmachl; Alessandro Tredicucci; Federico Capasso; Albert L. Hutchinson; Deborah L. Sivco; James N. Baillargeon; Alfred Y. Cho

Appl. Phys. Lett. 72, 3130–3132 (1998) https://doi.org/10.1063/1.121569

Abstract

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Focused ion-beam fabrication of fiber probes with well-defined apertures for use in near-field scanning optical microscopy

Saeed Pilevar; Klaus Edinger; Walid Atia; Igor Smolyaninov; Christopher Davis

Appl. Phys. Lett. 72, 3133–3135 (1998) https://doi.org/10.1063/1.121570

Abstract

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Red–green–blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP

L. Zeng; B. X. Yang; A. Cavus; W. Lin; Y. Y. Luo; M. C. Tamargo; Y. Guo; Y. C. Chen

Appl. Phys. Lett. 72, 3136–3138 (1998) https://doi.org/10.1063/1.121571

Abstract

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Polymer-based highly multimode electro-optic waveguide modulator

De-Gui Sun; Ray T. Chen

Appl. Phys. Lett. 72, 3139–3141 (1998) https://doi.org/10.1063/1.121572

Abstract

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CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Elastic and plastic deformation of diamondlike carbons

A. M. Stoneham; P. D. Godwin; A. P. Sutton; S. J. Bull

Appl. Phys. Lett. 72, 3142–3144 (1998) https://doi.org/10.1063/1.121573

Abstract

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Determination of the ordered structures of ${Pb(Mg}_{1/3} {Nb}_{2/3}) O_{3}$ and ${Ba(Mg}_{1/3} {Nb}_{2/3}) O_{3}$ by atomic-resolution Z-contrast imaging

Y. Yan; S. J. Pennycook; Z. Xu; D. Viehland

Appl. Phys. Lett. 72, 3145–3147 (1998) https://doi.org/10.1063/1.121574

Abstract

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Topography measurements of the critical thickness of ZnSe grown on GaAs

G. Horsburgh; K. A. Prior; W. Meredith; I. Galbraith; B. C. Cavenett; C. R. Whitehouse; G. Lacey; A. G. Cullis; P. J. Parbrook; P. Möck; K. Mizuno

Appl. Phys. Lett. 72, 3148–3150 (1998) https://doi.org/10.1063/1.121575

Abstract

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Self-regulated growth of tilted superlattices by atomic layer epitaxy

J. M. Hartmann; M. Charleux; J. Cibert; H. Mariette

Appl. Phys. Lett. 72, 3151–3153 (1998) https://doi.org/10.1063/1.121576

Abstract

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High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope

Shin’ichi Kitamura; Masashi Iwatsuki

Appl. Phys. Lett. 72, 3154–3156 (1998) https://doi.org/10.1063/1.121577

Abstract

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SEMICONDUCTORS

Intense visible photoluminescence in amorphous ${SiO}_{x}$ and ${SiO}_{x} : H$ films prepared by evaporation

H. Rinnert; M. Vergnat; G. Marchal; A. Burneau

Appl. Phys. Lett. 72, 3157–3159 (1998) https://doi.org/10.1063/1.121578

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Relaxed ${Ge}_{0.9} {Si}_{0.1}$ alloy layers with low threading dislocation densities grown on low-temperature Si buffers

C. S. Peng; Z. Y. Zhao; H. Chen; J. H. Li; Y. K. Li; L. W. Guo; D. Y. Dai; Q. Huang; J. M. Zhou; Y. H. Zhang; T. T. Sheng; C. H. Tung

Appl. Phys. Lett. 72, 3160–3162 (1998) https://doi.org/10.1063/1.121579

Abstract

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Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process

M. Passlack; R. Droopad; Z. Yu; C. Overgaard; B. Bowers; J. Abrokwah

Appl. Phys. Lett. 72, 3163–3165 (1998) https://doi.org/10.1063/1.121580

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Minority carrier diffusion length and lifetime in GaN

Z. Z. Bandić; P. M. Bridger; E. C. Piquette; T. C. McGill

Appl. Phys. Lett. 72, 3166–3168 (1998) https://doi.org/10.1063/1.121581

Abstract

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Fabrication of multiperiod ${Si/SiO}_{2} / Ge$ layered structure through chemical bond manipulation

K. Prabhakaran; T. Matsumoto; T. Ogino; Y. Masumoto

Appl. Phys. Lett. 72, 3169–3171 (1998) https://doi.org/10.1063/1.121582

Abstract

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Electronic states tuning of InAs self-assembled quantum dots

J. M. Garcı́a; T. Mankad; P. O. Holtz; P. J. Wellman; P. M. Petroff

Appl. Phys. Lett. 72, 3172–3174 (1998) https://doi.org/10.1063/1.121583

Abstract

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Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

L. Colace; G. Masini; F. Galluzzi; G. Assanto; G. Capellini; L. Di Gaspare; E. Palange; F. Evangelisti

Appl. Phys. Lett. 72, 3175–3177 (1998) https://doi.org/10.1063/1.121584

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Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped $p$ -type Si by alpha particle irradiation

M. Mamor; F. D. Auret; S. A. Goodman; W. E. Meyer; G. Myburg

Appl. Phys. Lett. 72, 3178–3180 (1998) https://doi.org/10.1063/1.121585

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Materials integration of gallium arsenide and silicon by wafer bonding

P. Kopperschmidt; S. Senz; G. Kästner; D. Hesse; U. M. Gösele

Appl. Phys. Lett. 72, 3181–3183 (1998) https://doi.org/10.1063/1.121586

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Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers

R. C. Tu; Y. K. Su; H. J. Chen; Y. S. Huang; S. T. Chou

Appl. Phys. Lett. 72, 3184–3186 (1998) https://doi.org/10.1063/1.121587

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Electrical evaluation of damage on the sidewalls of InP mesa structures fabricated by reactive ion etching with methane and hydrogen

Norio Yamamoto; Hiroyasu Mawatari; Kenji Kishi

Appl. Phys. Lett. 72, 3187–3189 (1998) https://doi.org/10.1063/1.121588

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Band edge versus deep luminescence of ${In}_{x} {Ga}_{1−x} N$ layers grown by molecular beam epitaxy

N. Grandjean; J. Massies; M. Leroux; P. De Mierry

Appl. Phys. Lett. 72, 3190–3192 (1998) https://doi.org/10.1063/1.121589

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Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells

I. P. Smorchkova; N. Samarth

Appl. Phys. Lett. 72, 3193–3195 (1998) https://doi.org/10.1063/1.121590

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Role of defects in producing negative temperature dependence of breakdown voltage in SiC

R. Raghunathan; B. J. Baliga

Appl. Phys. Lett. 72, 3196–3198 (1998) https://doi.org/10.1063/1.121591

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Effects of Ga addition to ${CuInSe}_{2}$ on its electronic, structural, and defect properties

Su-Huai Wei; S. B. Zhang; Alex Zunger

Appl. Phys. Lett. 72, 3199–3201 (1998) https://doi.org/10.1063/1.121548

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SUPERCONDUCTORS

Stability of ultrasmooth surface morphology of $(110) {YBa}_{2} {Cu}_{3} O_{7−δ}$ homoepitaxial films and ${Nb/Au/(110) YBa}_{2} {Cu}_{3} O_{7−δ}$ junctions

Toshiyuki Usagawa; Jianguo Wen; Yoshihiro Ishimaru; Satoshi Koyama; Tadashi Utagawa; Youichi Enomoto

Appl. Phys. Lett. 72, 3202–3204 (1998) https://doi.org/10.1063/1.121549

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Low noise operation of integrated ${YBa}_{2} {Cu}_{3} O_{7}$ magnetometers in static magnetic fields

S. Krey; B. David; R. Eckart; O. Dössel

Appl. Phys. Lett. 72, 3205–3207 (1998) https://doi.org/10.1063/1.121550

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MAGNETISM

Effects of inhomogeneous oxygen content in ${(La,Gd)}_{0.7} {Ca}_{0.3} {MnO}_{3+δ}$ perovskites

J. R. Sun; G. H. Rao; Y. Z. Zhang

Appl. Phys. Lett. 72, 3208–3210 (1998) https://doi.org/10.1063/1.121551

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Perpendicular magnetization and dipolar antiferromagnetism in double layer nanostripe arrays of Fe(110) on W(110)

J. Hauschild; U. Gradmann; H. J. Elmers

Appl. Phys. Lett. 72, 3211–3213 (1998) https://doi.org/10.1063/1.121552

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PAPERS IN OTHER FIELDS

Boltzmann machine neuron device using quantum-coupled single electrons

Nan-Jian Wu; Naoto Shibata; Yoshihito Amemiya

Appl. Phys. Lett. 72, 3214–3216 (1998) https://doi.org/10.1063/1.121553

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Removal of 90° domain pinning in $(100) {Pb(Zr}_{0.15} {Ti}_{0.85} {)O}_{3}$ thin films by pulsed operation

Markus Kohli; Paul Muralt; Nava Setter

Appl. Phys. Lett. 72, 3217–3219 (1998) https://doi.org/10.1063/1.121554

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High sensitivity spin-valve strain sensor

H. J. Mamin; B. A. Gurney; D. R. Wilhoit; V. S. Speriosu

Appl. Phys. Lett. 72, 3220–3222 (1998) https://doi.org/10.1063/1.121555

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Atomic force measurement of low-frequency dielectric noise

L. E. Walther; E. Vidal Russell; N. E. Israeloff; H. Alvarez Gomariz

Appl. Phys. Lett. 72, 3223–3225 (1998) https://doi.org/10.1063/1.121556

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Theoretical analysis of the resistively coupled single-electron transistor

Alexander N. Korotkov

Appl. Phys. Lett. 72, 3226–3228 (1998) https://doi.org/10.1063/1.121557

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