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Issues
8 June 1998
ISSN 0003-6951
EISSN 1077-3118
OPTICS
Fabrication and optical characterization of planar thin film optical waveguides
Yalin Lu; G.-H. Jin; M. Cronin-Golomb; S.-W. Liu; H. Jiang; F.-L. Wang; J. Zhao; S.-Q. Wang; A. J. Drehman
Appl. Phys. Lett. 72, 2927–2929 (1998)
https://doi.org/10.1063/1.121496
High resolution imaging microellipsometry of soft surfaces at 3 μm lateral and 5 Å normal resolution
Appl. Phys. Lett. 72, 2930–2932 (1998)
https://doi.org/10.1063/1.121497
The optical gain mechanism in solid conjugated polymers
Appl. Phys. Lett. 72, 2933–2935 (1998)
https://doi.org/10.1063/1.121498
Electrostrictive behavior observed in a low glass-transition temperature photorefractive polymeric composite during a two-beam coupling experiment
Feng Wang; Zhijian Chen; Shufeng Wang; Zhiwen Huang; Qihuang Gong; Zhijie Zhang; Yiwang Chen; Huiying Chen
Appl. Phys. Lett. 72, 2939–2941 (1998)
https://doi.org/10.1063/1.121500
Second-harmonic generation at μm in waveguides using birefringence phase matching
Appl. Phys. Lett. 72, 2942–2944 (1998)
https://doi.org/10.1063/1.121501
Single-mode optical waveguide fabricated by oxidization of selectively doped titanium porous silicon
Appl. Phys. Lett. 72, 2945–2947 (1998)
https://doi.org/10.1063/1.121502
Optically induced rotation of a trapped micro-object about an axis perpendicular to the laser beam axis
Appl. Phys. Lett. 72, 2951–2953 (1998)
https://doi.org/10.1063/1.121504
Single molecule detection and underwater fluorescence imaging with cantilevered near-field fiber optic probes
Appl. Phys. Lett. 72, 2954–2956 (1998)
https://doi.org/10.1063/1.121505
ACOUSTICS
A sensitive detection method for capacitive ultrasonic transducers
Appl. Phys. Lett. 72, 2957–2959 (1998)
https://doi.org/10.1063/1.121506
FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES
Laser-induced breakdown spectroscopy for sizing and elemental analysis of discrete aerosol particles
Appl. Phys. Lett. 72, 2960–2962 (1998)
https://doi.org/10.1063/1.121507
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
Domain structure of epitaxial thin films on miscut (001) substrates
Appl. Phys. Lett. 72, 2963–2965 (1998)
https://doi.org/10.1063/1.121508
Observation of small interfacial strains in sub-micron-thick films grown on substrates
Appl. Phys. Lett. 72, 2966–2968 (1998)
https://doi.org/10.1063/1.121509
Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering
A. Munkholm; C. Thompson; C. M. Foster; J. A. Eastman; O. Auciello; G. B. Stephenson; P. Fini; S. P. DenBaars; J. S. Speck
Appl. Phys. Lett. 72, 2972–2974 (1998)
https://doi.org/10.1063/1.121511
Experimental evidence of photoinduced expansion in hydrogenated amorphous silicon using bending detected optical lever method
Appl. Phys. Lett. 72, 2978–2980 (1998)
https://doi.org/10.1063/1.121513
SEMICONDUCTORS
Time-resolved imaging of gas phase nanoparticle synthesis by laser ablation
Appl. Phys. Lett. 72, 2987–2989 (1998)
https://doi.org/10.1063/1.121516
Optical characterization of lateral epitaxial overgrown GaN layers
Appl. Phys. Lett. 72, 2990–2992 (1998)
https://doi.org/10.1063/1.121517
Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution
Appl. Phys. Lett. 72, 2993–2995 (1998)
https://doi.org/10.1063/1.121518
Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition
Appl. Phys. Lett. 72, 2996–2998 (1998)
https://doi.org/10.1063/1.121519
Incorporation of oxygen and nitrogen in ultrathin films of annealed in NO
Appl. Phys. Lett. 72, 2999–3001 (1998)
https://doi.org/10.1063/1.121520
Comparison of some properties of nanosized silicon clusters in porous glasses
Appl. Phys. Lett. 72, 3005–3007 (1998)
https://doi.org/10.1063/1.121522
Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry
Appl. Phys. Lett. 72, 3008–3010 (1998)
https://doi.org/10.1063/1.121523
MeV ion induced delamination of diamond films
Appl. Phys. Lett. 72, 3014–3016 (1998)
https://doi.org/10.1063/1.121525
SiC/Si heterostructure negative-differential-resistance diode for high-temperature applications
Appl. Phys. Lett. 72, 3017–3019 (1998)
https://doi.org/10.1063/1.121526
Surface photovoltage spectroscopy of and AlGaAs/GaAs heterojunctions
Appl. Phys. Lett. 72, 3020–3022 (1998)
https://doi.org/10.1063/1.121527
Thermal stability of the negative electron affinity condition on cubic boron nitride
Appl. Phys. Lett. 72, 3023–3025 (1998)
https://doi.org/10.1063/1.121528
Electrical characterization of hole traps in type ZnSe and ZnSSe grown by molecular beam epitaxy
Appl. Phys. Lett. 72, 3026–3028 (1998)
https://doi.org/10.1063/1.121529
Identification of Ag-acceptor related photoluminescence in doped CdTe
J. Hamann; A. Burchard; M. Deicher; T. Filz; V. Ostheimer; C. Schmitz; H. Wolf; Th. Wichert; The ISOLDE Collaboration
Appl. Phys. Lett. 72, 3029–3031 (1998)
https://doi.org/10.1063/1.121530
Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy
Appl. Phys. Lett. 72, 3032–3034 (1998)
https://doi.org/10.1063/1.121531
Observation of quantum confined excited states of GaN nanocrystals
Appl. Phys. Lett. 72, 3035–3037 (1998)
https://doi.org/10.1063/1.121532
Current–voltage characteristic of organic light emitting diodes
Appl. Phys. Lett. 72, 3038–3040 (1998)
https://doi.org/10.1063/1.121533
Annealing kinetics and reversibility of stress-induced leakage current in thin oxides
Appl. Phys. Lett. 72, 3041–3043 (1998)
https://doi.org/10.1063/1.121534
Electrical characterization of the threshold fluence for extended defect formation in -type silicon implanted with MeV Si ions
Appl. Phys. Lett. 72, 3044–3046 (1998)
https://doi.org/10.1063/1.121535
Photoluminescence of pseudomorphic SiGe formed by ion implantation in the overlayer of silicon-on-insulator material
Appl. Phys. Lett. 72, 3047–3049 (1998)
https://doi.org/10.1063/1.121536
Metalorganic molecular beam epitaxial growth of semi-insulating optical waveguides for integrated photonic devices
Appl. Phys. Lett. 72, 3050–3052 (1998)
https://doi.org/10.1063/1.121537
Low-frequency noise in GaN/GaAlN heterojunctions
M. E. Levinshtein; F. Pascal; S. Contreras; W. Knap; S. L. Rumyantsev; R. Gaska; J. W. Yang; M. S. Shur
Appl. Phys. Lett. 72, 3053–3055 (1998)
https://doi.org/10.1063/1.121538
Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN
Appl. Phys. Lett. 72, 3056–3058 (1998)
https://doi.org/10.1063/1.121539
SUPERCONDUCTORS
Fabrication and properties of all-refractory junctions for microbolometers and microrefrigerators
Appl. Phys. Lett. 72, 3062–3064 (1998)
https://doi.org/10.1063/1.121541
Pulsed laser deposition of superconducting Nb-doped strontium titanate thin films
Appl. Phys. Lett. 72, 3065–3067 (1998)
https://doi.org/10.1063/1.121542
Directly coupled direct current superconducting quantum interference device magnetometers based on ramp-edge junctions
Appl. Phys. Lett. 72, 3068–3070 (1998)
https://doi.org/10.1063/1.121543
PAPERS IN OTHER FIELDS
A metal/oxide tunneling transistor
Appl. Phys. Lett. 72, 3071–3073 (1998)
https://doi.org/10.1063/1.121544
Femtosecond tunneling response of surface plasmon polaritons
Appl. Phys. Lett. 72, 3074–3076 (1998)
https://doi.org/10.1063/1.121545
Humidity-dependent impedance in porous spinel nickel germanate ceramic
Appl. Phys. Lett. 72, 3077–3079 (1998)
https://doi.org/10.1063/1.121546
Experimental verification of super resolution in nonlinear inverse scattering
Appl. Phys. Lett. 72, 3080–3082 (1998)
https://doi.org/10.1063/1.121547
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
J. Wang, D. G. Rickel, et al.