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Issues
4 May 1998
ISSN 0003-6951
EISSN 1077-3118
OPTICS
Wavelength dependence of carrier-type in reduced
Appl. Phys. Lett. 72, 2199–2201 (1998)
https://doi.org/10.1063/1.121321
Optical properties of heterostructures on sapphire by spectroscopic ellipsometry
Appl. Phys. Lett. 72, 2202–2204 (1998)
https://doi.org/10.1063/1.121322
High-finesse nonabsorbing optical cavity
Hyun-Eoi Shin; Young-Gu Ju; Hyun-Woo Song; Dae-Sung Song; Il-Young Han; Jung-Hoon Ser; Han-Youl Ryu; Yong-Hee Lee; Hyo-Hoon Park
Appl. Phys. Lett. 72, 2205–2207 (1998)
https://doi.org/10.1063/1.121323
Strongly enhanced soft x-ray emission at 8 nm from plasma on a neodymium-doped glass surface heated by femtosecond laser pulses
Appl. Phys. Lett. 72, 2208–2210 (1998)
https://doi.org/10.1063/1.121324
Generation of -switched Er:YAG laser pulses using evanescent wave absorption in ethanol
Appl. Phys. Lett. 72, 2211–2213 (1998)
https://doi.org/10.1063/1.121325
Mid-infrared interband cascade lasers with quantum efficiencies >200%
Appl. Phys. Lett. 72, 2220–2222 (1998)
https://doi.org/10.1063/1.121265
Far-field emission narrowing effect of microdisk lasers
Appl. Phys. Lett. 72, 2223–2225 (1998)
https://doi.org/10.1063/1.121328
Low voltage cathodoluminescence properties of blue emitting and phosphors
Appl. Phys. Lett. 72, 2226–2228 (1998)
https://doi.org/10.1063/1.121266
Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches
Appl. Phys. Lett. 72, 2229–2231 (1998)
https://doi.org/10.1063/1.121329
On the lack of influence of disorder in -doped
Appl. Phys. Lett. 72, 2232–2234 (1998)
https://doi.org/10.1063/1.121330
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
Picosecond ultrasonics study of the modification of interfacial bonding by ion implantation
Appl. Phys. Lett. 72, 2235–2237 (1998)
https://doi.org/10.1063/1.121276
Anisotropic modulated structures upon annealing of epitaxial AuNi ultrathin films on Au(001)
Appl. Phys. Lett. 72, 2241–2243 (1998)
https://doi.org/10.1063/1.121267
Electron emission induced modifications in amorphous tetrahedral diamondlike carbon
Appl. Phys. Lett. 72, 2244–2246 (1998)
https://doi.org/10.1063/1.121332
Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on sapphire by metalorganic chemical vapor deposition
P. J. Hansen; Y. E. Strausser; A. N. Erickson; E. J. Tarsa; P. Kozodoy; E. G. Brazel; J. P. Ibbetson; U. Mishra; V. Narayanamurti; S. P. DenBaars; J. S. Speck
Appl. Phys. Lett. 72, 2247–2249 (1998)
https://doi.org/10.1063/1.121268
Measurements of thermal transport in low stress silicon nitride films
Appl. Phys. Lett. 72, 2250–2252 (1998)
https://doi.org/10.1063/1.121269
A method for the formation of polymer walls in liquid crystal/polymer mixtures
Appl. Phys. Lett. 72, 2253–2255 (1998)
https://doi.org/10.1063/1.121333
Current–voltage characteristics of metal-insulator-semiconductor structures via quantum mechanical tunneling
Appl. Phys. Lett. 72, 2256–2258 (1998)
https://doi.org/10.1063/1.121270
SEMICONDUCTORS
Observation of a Cole–Davidson type complex conductivity in the limit of very low carrier densities in doped silicon
Appl. Phys. Lett. 72, 2259–2261 (1998)
https://doi.org/10.1063/1.121271
quantum wells grown on vicinal substrates: Morphology, dislocation dynamics, and transport properties
Appl. Phys. Lett. 72, 2262–2264 (1998)
https://doi.org/10.1063/1.121272
Atomic structure of faceted planes of three-dimensional islands on studied by scanning tunneling microscope
Appl. Phys. Lett. 72, 2265–2267 (1998)
https://doi.org/10.1063/1.121273
Behavior of single-electron transistors from 85 mK to 5 K
Appl. Phys. Lett. 72, 2268–2270 (1998)
https://doi.org/10.1063/1.121334
Hydrogen-induced thermal interface degradation in (111) revealed by electron-spin resonance
Appl. Phys. Lett. 72, 2271–2273 (1998)
https://doi.org/10.1063/1.121335
Near-band-edge photoluminescence emission in under high pressure
W. Shan; J. W. Ager, III; W. Walukiewicz; E. E. Haller; B. D. Little; J. J. Song; M. Schurman; Z. C. Feng; R. A. Stall; B. Goldenberg
Appl. Phys. Lett. 72, 2274–2276 (1998)
https://doi.org/10.1063/1.121277
Deep centers in grown by reactive molecular beam epitaxy
Appl. Phys. Lett. 72, 2277–2279 (1998)
https://doi.org/10.1063/1.121274
Correlation between nitrogen concentration profile and infrared spectroscopy in silicon dioxide
Appl. Phys. Lett. 72, 2280–2282 (1998)
https://doi.org/10.1063/1.121336
Measurement of interface trap states in metal–ferroelectric–silicon heterostructures
Appl. Phys. Lett. 72, 2283–2285 (1998)
https://doi.org/10.1063/1.121337
Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for heterostructures
Appl. Phys. Lett. 72, 2286–2288 (1998)
https://doi.org/10.1063/1.121338
Native point defects in Si with a film: Single crystal versus polycrystalline
Appl. Phys. Lett. 72, 2289–2291 (1998)
https://doi.org/10.1063/1.121275
New buffer concept inherent to pulsed laser induced epitaxy
Appl. Phys. Lett. 72, 2292–2294 (1998)
https://doi.org/10.1063/1.121339
Local oxidation of silicon surfaces by dynamic force microscopy: Nanofabrication and water bridge formation
Appl. Phys. Lett. 72, 2295–2297 (1998)
https://doi.org/10.1063/1.121340
Surface photovoltage analysis of copper in -type silicon
Appl. Phys. Lett. 72, 2298–2300 (1998)
https://doi.org/10.1063/1.121341
Lattice relaxation in ZnS epilayers grown on GaP
Appl. Phys. Lett. 72, 2304–2306 (1998)
https://doi.org/10.1063/1.121354
Demonstration of Si homojunction far-infrared detectors
Appl. Phys. Lett. 72, 2307–2309 (1998)
https://doi.org/10.1063/1.121344
Self-stopping selective-oxidation process of AlAs
Appl. Phys. Lett. 72, 2310–2312 (1998)
https://doi.org/10.1063/1.121345
Surface characterization of silicon on insulator material
Appl. Phys. Lett. 72, 2313–2315 (1998)
https://doi.org/10.1063/1.121346
Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface
Appl. Phys. Lett. 72, 2319–2321 (1998)
https://doi.org/10.1063/1.121348
Electron transfer efficiency of Si δ-modulation-doped pseudomorphic quantum wells
Appl. Phys. Lett. 72, 2322–2324 (1998)
https://doi.org/10.1063/1.121349
SUPERCONDUCTORS
Suppressed rf dissipation in ion irradiated single crystals by enhanced flux line tilt modulus
Y. S. Sudershan; Amit Rastogi; S. V. Bhat; A. K. Grover; Y. Yamaguchi; K. Oka; Y. Nishihara; L. Senapati; D. Kanjilal
Appl. Phys. Lett. 72, 2325–2327 (1998)
https://doi.org/10.1063/1.121350
Measurement of the dynamic error rate of a high temperature superconductor rapid single flux quantum comparator
Appl. Phys. Lett. 72, 2328–2330 (1998)
https://doi.org/10.1063/1.121351
MAGNETISM
Probing structure and magnetism of CoNi/Pt interfaces by nonlinear magneto-optics
Appl. Phys. Lett. 72, 2331–2333 (1998)
https://doi.org/10.1063/1.121352
PAPERS IN OTHER FIELDS
Automated parallel high-speed atomic force microscopy
Appl. Phys. Lett. 72, 2340–2342 (1998)
https://doi.org/10.1063/1.121353
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.