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20 April 1998
ISSN 0003-6951
EISSN 1077-3118
OPTICS
Organic light-emitting diodes using a gallium complex
Yuji Hamada; Hiroshi Kanno; Takeshi Sano; Hiroyuki Fujii; Yoshitaka Nishio; Hisakazu Takahashi; Tatsuro Usuki; Kenichi Shibata
Appl. Phys. Lett. 72, 1939–1941 (1998)
https://doi.org/10.1063/1.121448
Photorefractive Bragg diffraction in high- and low-molar-mass liquid crystal mixtures
Appl. Phys. Lett. 72, 1942–1944 (1998)
https://doi.org/10.1063/1.121230
Thermally-actuated reflection mode asymmetric Fabry–Perot modulator utilizing a thin transparent elastomeric film
Appl. Phys. Lett. 72, 1951–1953 (1998)
https://doi.org/10.1063/1.121233
Electrical wavelength tunable and multiwavelength actively mode-locked fiber ring laser
Appl. Phys. Lett. 72, 1954–1956 (1998)
https://doi.org/10.1063/1.121263
Spontaneous emission from fluorescent molecules embedded in photonic crystals consisting of polystyrene microspheres
Appl. Phys. Lett. 72, 1957–1959 (1998)
https://doi.org/10.1063/1.121234
All-optical beam deflection and switching in strontium–barium–niobate waveguides
Appl. Phys. Lett. 72, 1960–1962 (1998)
https://doi.org/10.1063/1.121317
Frequency control in laser ultrasound with computer generated holography
Appl. Phys. Lett. 72, 1963–1965 (1998)
https://doi.org/10.1063/1.121235
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
Synthesis of boron nitride nanotubes by means of excimer laser ablation at high temperature
D. P. Yu; X. S. Sun; C. S. Lee; I. Bello; S. T. Lee; H. D. Gu; K. M. Leung; G. W. Zhou; Z. F. Dong; Z. Zhang
Appl. Phys. Lett. 72, 1966–1968 (1998)
https://doi.org/10.1063/1.121236
The effect of composition on the thermal stability of heterostructures
Appl. Phys. Lett. 72, 1972–1974 (1998)
https://doi.org/10.1063/1.121238
Optical unwinding and reentrance phenomena in chiral smectic-C liquid crystals
Appl. Phys. Lett. 72, 1975–1977 (1998)
https://doi.org/10.1063/1.121264
Reflective mode of a nematic liquid crystal with chirality in a hybrid aligned configuration
Appl. Phys. Lett. 72, 1978–1980 (1998)
https://doi.org/10.1063/1.121239
The role of nonstoichiometry in 180° domain switching of crystals
Appl. Phys. Lett. 72, 1981–1983 (1998)
https://doi.org/10.1063/1.121491
SEMICONDUCTORS
Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy
Appl. Phys. Lett. 72, 1987–1989 (1998)
https://doi.org/10.1063/1.121241
The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
Appl. Phys. Lett. 72, 1990–1992 (1998)
https://doi.org/10.1063/1.121242
Doping-density dependence of scanning tunneling spectroscopy on lightly doped silicon
Appl. Phys. Lett. 72, 1993–1995 (1998)
https://doi.org/10.1063/1.121243
Truly ohmic contacts in engineered Al/Si/InGaAs(001) diodes
Silvano De Franceschi; Fabio Beltram; Claudio Marinelli; Lucia Sorba; Marco Lazzarino; Bernhard H. Müller; Alfonso Franciosi
Appl. Phys. Lett. 72, 1996–1998 (1998)
https://doi.org/10.1063/1.121244
Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine
Appl. Phys. Lett. 72, 1999–2001 (1998)
https://doi.org/10.1063/1.121245
Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311)A substrates
Richard Nötzel; Uwe Jahn; Zhichuan Niu; Achim Trampert; Jörg Fricke; Hans-Peter Schönherr; Thomas Kurth; Detlef Heitmann; Lutz Däweritz; Klaus H. Ploog
Appl. Phys. Lett. 72, 2002–2004 (1998)
https://doi.org/10.1063/1.121246
Carrier capture into InGaAs/GaAs quantum wells via impurity mediated resonant tunneling
Appl. Phys. Lett. 72, 2008–2010 (1998)
https://doi.org/10.1063/1.121248
Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals
Appl. Phys. Lett. 72, 2011–2013 (1998)
https://doi.org/10.1063/1.121249
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
Shuji Nakamura; Masayuki Senoh; Shin-ichi Nagahama; Naruhito Iwasa; Takao Yamada; Toshio Matsushita; Hiroyuki Kiyoku; Yasunobu Sugimoto; Tokuya Kozaki; Hitoshi Umemoto; Masahiko Sano; Kazuyuki Chocho
Appl. Phys. Lett. 72, 2014–2016 (1998)
https://doi.org/10.1063/1.121250
Electrical properties of semiconductive Nb-doped thin films prepared by metal–organic chemical-vapor deposition
Appl. Phys. Lett. 72, 2017–2019 (1998)
https://doi.org/10.1063/1.121251
Far-infrared photoconductivity in self-organized InAs quantum dots
Appl. Phys. Lett. 72, 2020–2022 (1998)
https://doi.org/10.1063/1.121252
heterostructures for nuclear radiation detectors: Effect of epitaxial growth on substrate properties
Appl. Phys. Lett. 72, 2023–2025 (1998)
https://doi.org/10.1063/1.121253
Comparison of the annealing behavior of high-dose aluminum-, and boron-implanted 4H–SiC
Appl. Phys. Lett. 72, 2026–2028 (1998)
https://doi.org/10.1063/1.121681
SUPERCONDUCTORS
A design of planar multi-turn flux transformers for radio frequency SQUID magnetometers
Appl. Phys. Lett. 72, 2029–2031 (1998)
https://doi.org/10.1063/1.121254
Planar thin film Josephson junctions via nanolithography and ion damage
Appl. Phys. Lett. 72, 2032–2034 (1998)
https://doi.org/10.1063/1.121255
MAGNETISM
Magnetoresistance of artificial grain boundaries as a function of misorientation angle
Appl. Phys. Lett. 72, 2038–2040 (1998)
https://doi.org/10.1063/1.121257
Magnetoelastic properties of epitaxial holmium and erbium thin films
Appl. Phys. Lett. 72, 2044–2046 (1998)
https://doi.org/10.1063/1.121259
Spin dependent electron absorption in : A new candidate for a stable and efficient electron polarization analyzer
Appl. Phys. Lett. 72, 2050–2052 (1998)
https://doi.org/10.1063/1.121261
Effect of magnetic field on the superparamagnetic relaxation in granular Co-Ag samples
Appl. Phys. Lett. 72, 2053–2055 (1998)
https://doi.org/10.1063/1.121262
PAPERS IN OTHER FIELDS
Effect of Ti substitution on the thermoelectric properties of the pentatelluride materials
R. T. Littleton, IV; Terry M. Tritt; C. R. Feger; J. Kolis; M. L. Wilson; M. Marone; J. Payne; D. Verebeli; F. Levy
Appl. Phys. Lett. 72, 2056–2058 (1998)
https://doi.org/10.1063/1.121406
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.