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Volume 72, Issue 10

9 March 1998

All Issues

ISSN 0003-6951

EISSN 1077-3118

In this Issue

OPTICS
FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
SEMICONDUCTORS
SUPERCONDUCTORS

OPTICS

Fabrication of a low-operating voltage diamond thin film metal–semiconductor–metal photodetector by laser writing lithography

Wei Jiang; Jaeshin Ahn; Feng-Lan Xu; Chin-Yi Liaw; Yuen-Chuen Chan; Yan Zhou; Yee-Loy Lam

Appl. Phys. Lett. 72, 1131–1133 (1998) https://doi.org/10.1063/1.120992

Abstract

View articletitled, Fabrication of a low-operating voltage diamond thin film metal–semiconductor–metal photodetector by laser writing lithography

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A high-speed free-space traveling wave photodetector

Thomas Merlet; Daniel Dolfi; Philippe Collot; Julien Nagle; Jean-Pierre Huignard

Appl. Phys. Lett. 72, 1134–1136 (1998) https://doi.org/10.1063/1.120993

Abstract

View articletitled, A high-speed free-space traveling wave photodetector

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Fiber image guide with subwavelength resolution

H. F. Ghaemi; Yao Li; Tineke Thio; T. Wang

Appl. Phys. Lett. 72, 1137–1139 (1998) https://doi.org/10.1063/1.120994

Abstract

View articletitled, Fiber image guide with subwavelength resolution

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Gain of the mode locked p-Ge laser in the low field region

J. N. Hovenier; T. O. Klaassen; W. Th. Wenckebach; A. V. Muravjov; S. G. Pavlov; V. N. Shastin

Appl. Phys. Lett. 72, 1140–1142 (1998) https://doi.org/10.1063/1.120995

Abstract

View articletitled, Gain of the mode locked p-Ge laser in the low field region

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FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma

C. Cismaru; J. L. Shohet; K. Nauka; J. B. Friedmann

Appl. Phys. Lett. 72, 1143–1145 (1998) https://doi.org/10.1063/1.120996

Abstract

View articletitled, Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma

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Measuring the ion current in electrical discharges using radio-frequency current and voltage measurements

M. A. Sobolewski

Appl. Phys. Lett. 72, 1146–1148 (1998) https://doi.org/10.1063/1.121032

Abstract

View articletitled, Measuring the ion current in electrical discharges using radio-frequency current and voltage measurements

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Novel microwave plasma reactor for diamond synthesis

M. Füner; C. Wild; P. Koidl

Appl. Phys. Lett. 72, 1149–1151 (1998) https://doi.org/10.1063/1.120997

Abstract

View articletitled, Novel microwave plasma reactor for diamond synthesis

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CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

Mechanical parametric amplification in piezoresistive gallium arsenide microcantilevers

A. Dâna; F. Ho; Y. Yamamoto

Appl. Phys. Lett. 72, 1152–1154 (1998) https://doi.org/10.1063/1.120998

Abstract

View articletitled, Mechanical parametric amplification in piezoresistive gallium arsenide microcantilevers

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Growing a periodic microstructure on the superconductor crystal surface by electrocrystallization

X. G. Zheng; M. Taira; M. Suzuki; C. N. Xu

Appl. Phys. Lett. 72, 1155–1157 (1998) https://doi.org/10.1063/1.120999

Abstract

View articletitled, Growing a periodic microstructure on the superconductor crystal surface by electrocrystallization

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Growth of epitaxial ${Al}_{x} {Ga}_{1−x} N$ films by pulsed laser deposition

Tzu-fang Huang; James S. Harris, Jr.

Appl. Phys. Lett. 72, 1158–1160 (1998) https://doi.org/10.1063/1.121033

Abstract

View articletitled, Growth of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> films by pulsed laser deposition

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Growth and characterization of ${InN}_{x} {As}_{y} P_{1−x−y} / InP$ strained quantum well structures

W. G. Bi; C. W. Tu

Appl. Phys. Lett. 72, 1161–1163 (1998) https://doi.org/10.1063/1.121000

Abstract

View articletitled, Growth and characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">InN</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mtext>1−x−y</mtext></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">InP</mi></math> strained quantum well structures

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Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma

W. Ensinger; K. Volz; G. Schrag; B. Stritzker; B. Rauschenbach

Appl. Phys. Lett. 72, 1164–1166 (1998) https://doi.org/10.1063/1.121001

Abstract

View articletitled, Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma

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An in situ Raman study of polarization-dependent photocrystallization in amorphous selenium films

Vladimir V. Poborchii; Alexander V. Kolobov; Kazunobu Tanaka

Appl. Phys. Lett. 72, 1167–1169 (1998) https://doi.org/10.1063/1.121002

Abstract

View articletitled, An in situ Raman study of polarization-dependent photocrystallization in amorphous selenium films

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Boundary condition effects on field-induced deformation modes in polymer dispersed liquid crystals

Takeshi Yamaguchi; Yasushi Kawata; Yasushi Mori

Appl. Phys. Lett. 72, 1170–1172 (1998) https://doi.org/10.1063/1.121003

Abstract

View articletitled, Boundary condition effects on field-induced deformation modes in polymer dispersed liquid crystals

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Self-organized formation of hexagonal pore arrays in anodic alumina

In Special Collection: APL Classic Papers

O. Jessensky; F. Müller; U. Gösele

Appl. Phys. Lett. 72, 1173–1175 (1998) https://doi.org/10.1063/1.121004

Abstract

View articletitled, Self-organized formation of hexagonal pore arrays in anodic alumina

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Favorable formation of the ${C49-TiSi}_{2}$ phase on Si(001) determined by first-principles calculations

B. D. Yu; Yoshiyuki Miyamoto; Osamu Sugino; T. Sasaki; T. Ohno

Appl. Phys. Lett. 72, 1176–1178 (1998) https://doi.org/10.1063/1.121005

Abstract

View articletitled, Favorable formation of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C49-TiSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> phase on Si(001) determined by first-principles calculations

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$c$ -axis oriented ferroelectric thin films of Si-substituted ${PbTiO}_{3}$ on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application

S. C. Purandare; V. R. Palkar; J. John; M. S. Multani; R. Pinto

Appl. Phys. Lett. 72, 1179–1181 (1998) https://doi.org/10.1063/1.121006

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">c</mi></math>-axis oriented ferroelectric thin films of Si-substituted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application

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SEMICONDUCTORS

Improvement of $({Pb}_{1−x} {La}_{x})({Zr}_{y} {Ti}_{1−y})_{1−x/4} O_{3}$ ferroelectric thin films by use of ${SrRuO}_{3} /Ru/Pt/Ti$ bottom electrodes

Kuo-Shung Liu; Tzu-Feng Tseng; I-Nan Lin

Appl. Phys. Lett. 72, 1182–1184 (1998) https://doi.org/10.1063/1.121007

Abstract

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${SrBi}_{2} {Ta}_{2} O_{9}$ memory capacitor on Si with a silicon nitride buffer

Jin-Ping Han; T. P. Ma

Appl. Phys. Lett. 72, 1185–1186 (1998) https://doi.org/10.1063/1.121008

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math> memory capacitor on Si with a silicon nitride buffer

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Chemical vapor deposition of ultrathin ${Ta}_{2} O_{5}$ films using $Ta [{N(CH}_{3})_{2}]_{5}$

K.-A. Son; A. Y. Mao; Y.-M. Sun; B. Y. Kim; F. Liu; A. Kamath; J. M. White; D. L. Kwong; D. A. Roberts; R. N. Vrtis

Appl. Phys. Lett. 72, 1187–1189 (1998) https://doi.org/10.1063/1.121009

Abstract

View articletitled, Chemical vapor deposition of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math> films using <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Ta</mi><mi xmlns="">[</mi><msub xmlns=""><mi mathvariant="normal">N(CH</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi>]</mi><mrow><mn>5</mn></mrow></msub></math>

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Annealing of ion implanted gallium nitride

H. H. Tan; J. S. Williams; J. Zou; D. J. H. Cockayne; S. J. Pearton; J. C. Zolper; R. A. Stall

Appl. Phys. Lett. 72, 1190–1192 (1998) https://doi.org/10.1063/1.121030

Abstract

View articletitled, Annealing of ion implanted gallium nitride

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Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers

Brian R. Bennett; M. J. Yang; B. V. Shanabrook; J. B. Boos; D. Park

Appl. Phys. Lett. 72, 1193–1195 (1998) https://doi.org/10.1063/1.121010

Abstract

View articletitled, Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers

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Spatial resolution of capacitance-voltage profiles in quantum well structures

C. R. Moon; Byung-Doo Choe; S. D. Kwon; H. Lim

Appl. Phys. Lett. 72, 1196–1198 (1998) https://doi.org/10.1063/1.121011

Abstract

View articletitled, Spatial resolution of capacitance-voltage profiles in quantum well structures

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Leakage current models of thin film silicon-on-insulator devices

Hank Shin; Stella Hong; Tom Wetteroth; Syd R. Wilson; Dieter K. Schroder

Appl. Phys. Lett. 72, 1199–1201 (1998) https://doi.org/10.1063/1.121012

Abstract

View articletitled, Leakage current models of thin film silicon-on-insulator devices

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Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition

V. L. Gurtovoi; V. V. Valyaev; S. Yu. Shapoval; A. N. Pustovit

Appl. Phys. Lett. 72, 1202–1204 (1998) https://doi.org/10.1063/1.121013

Abstract

View articletitled, Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition

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Silicon single-electron quantum-dot transistor switch operating at room temperature

Lei Zhuang; Lingjie Guo; Stephen Y. Chou

Appl. Phys. Lett. 72, 1205–1207 (1998) https://doi.org/10.1063/1.121014

Abstract

View articletitled, Silicon single-electron quantum-dot transistor switch operating at room temperature

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Characterization of piezoelectric (111)B InGaAs/GaAs $p-i-n$ quantum well structures using photoreflectance spectroscopy

C. H. Chan; M. C. Chen; H. H. Lin; Y. F. Chen; G. J. Jan; Y. H. Chen

Appl. Phys. Lett. 72, 1208–1210 (1998) https://doi.org/10.1063/1.121015

Abstract

View articletitled, Characterization of piezoelectric (111)B InGaAs/GaAs <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-i-n</mi></math> quantum well structures using photoreflectance spectroscopy

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Deep level defects in n-type GaN grown by molecular beam epitaxy

C. D. Wang; L. S. Yu; S. S. Lau; E. T. Yu; W. Kim; A. E. Botchkarev; H. Morkoç

Appl. Phys. Lett. 72, 1211–1213 (1998) https://doi.org/10.1063/1.121016

Abstract

View articletitled, Deep level defects in n-type GaN grown by molecular beam epitaxy

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Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy

W. Götz; L. T. Romano; J. Walker; N. M. Johnson; R. J. Molnar

Appl. Phys. Lett. 72, 1214–1216 (1998) https://doi.org/10.1063/1.121017

Abstract

View articletitled, Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy

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Excitonic photoluminescence in a shallow quantum well under electric field

J. Tignon; O. Heller; Ph. Roussignol; C. Delalande; G. Bastard; V. Thierry-Mieg; R. Planel; J. F. Palmier

Appl. Phys. Lett. 72, 1217–1219 (1998) https://doi.org/10.1063/1.121018

Abstract

View articletitled, Excitonic photoluminescence in a shallow quantum well under electric field

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A novel self-consistent simulator for current-density–voltage characteristics of semiconductor field emitters

A. DasGupta; D. Arslan; A. Sigurdardottir; H. L. Hartnagel

Appl. Phys. Lett. 72, 1220–1222 (1998) https://doi.org/10.1063/1.121019

Abstract

View articletitled, A novel self-consistent simulator for current-density–voltage characteristics of semiconductor field emitters

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Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon $p–n$ junction

A. M. Emel’yanov; N. A. Sobolev; A. N. Yakimenko

Appl. Phys. Lett. 72, 1223–1225 (1998) https://doi.org/10.1063/1.121020

Abstract

View articletitled, Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–n</mi></math> junction

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Explanation for carrier removal and type conversion in irradiated silicon solar cells

T. Yamaguchi; S. J. Taylor; S. Watanabe; K. Ando; M. Yamaguchi; T. Hisamatsu; S. Matsuda

Appl. Phys. Lett. 72, 1226–1228 (1998) https://doi.org/10.1063/1.121021

Abstract

View articletitled, Explanation for carrier removal and type conversion in irradiated silicon solar cells

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Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures

D. Caputo; G. de Cesare; A. Nascetti; F. Palma; M. Petri

Appl. Phys. Lett. 72, 1229–1231 (1998) https://doi.org/10.1063/1.121022

Abstract

View articletitled, Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures

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Electron paramagnetic resonance and photoluminescence studies of chromium in SrS

J. Kreissl; U. Troppenz; B. Hüttl; L. Schrottke; C. Fouassier

Appl. Phys. Lett. 72, 1232–1234 (1998) https://doi.org/10.1063/1.121023

Abstract

View articletitled, Electron paramagnetic resonance and photoluminescence studies of chromium in SrS

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Carbon doping of InSb using ${CBr}_{4}$ during growth by gas-source molecular beam epitaxy

W. V. Schoenfeld; M. J. Antonell; C. R. Abernathy

Appl. Phys. Lett. 72, 1235–1237 (1998) https://doi.org/10.1063/1.121024

Abstract

View articletitled, Carbon doping of InSb using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CBr</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> during growth by gas-source molecular beam epitaxy

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Nanometer scale surface clustering on ZnSe epilayers

J. B. Smathers; E. Kneedler; B. R. Bennett; B. T. Jonker

Appl. Phys. Lett. 72, 1238–1240 (1998) https://doi.org/10.1063/1.121025

Abstract

View articletitled, Nanometer scale surface clustering on ZnSe epilayers

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Electrical properties and crystal structures of $({Ba,Sr)TiO}_{3}$ films and ${BaRuO}_{3}$ bottom electrodes prepared by sputtering

Chung Ming Chu; Pang Lin

Appl. Phys. Lett. 72, 1241–1243 (1998) https://doi.org/10.1063/1.121026

Abstract

View articletitled, Electrical properties and crystal structures of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba,Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> films and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaRuO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> bottom electrodes prepared by sputtering

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Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

D. M. Hansen; R. Zhang; N. R. Perkins; S. Safvi; L. Zhang; K. L. Bray; T. F. Kuech

Appl. Phys. Lett. 72, 1244–1246 (1998) https://doi.org/10.1063/1.121034

Abstract

View articletitled, Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

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Effect of fluorine on chemical and electrical properties of room temperature oxide films prepared by plasma enhanced chemical vapor deposition

Kihong Kim; Juho Song; Daehyuk Kwon; G. S. Lee

Appl. Phys. Lett. 72, 1247–1249 (1998) https://doi.org/10.1063/1.121027

Abstract

View articletitled, Effect of fluorine on chemical and electrical properties of room temperature oxide films prepared by plasma enhanced chemical vapor deposition

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Electrical characteristics of plasma oxidized ${Si}_{1−x−y} {Ge}_{x} C_{y}$ metal–oxide–semiconductor capacitors

S. K. Ray; L. K. Bera; C. K. Maiti; S. John; S. K. Banerjee

Appl. Phys. Lett. 72, 1250–1252 (1998) https://doi.org/10.1063/1.121028

Abstract

View articletitled, Electrical characteristics of plasma oxidized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>y</mi></mrow></msub></math> metal–oxide–semiconductor capacitors

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SUPERCONDUCTORS

Liquid source metal–organic chemical-vapor deposition of high-quality ${YBa}_{2} {Cu}_{3} O_{7−x}$ films on polycrystalline silver substrates

D. B. Studebaker; J. Zhang; T. J. Marks; Y. Y. Wang; V. P. Dravid; J. L. Schindler; C. R. Kannewurf

Appl. Phys. Lett. 72, 1253–1255 (1998) https://doi.org/10.1063/1.121029

Abstract

View articletitled, Liquid source metal–organic chemical-vapor deposition of high-quality <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−x</mtext></mrow></msub></math> films on polycrystalline silver substrates

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OPTICS

FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

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SUPERCONDUCTORS

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