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Defect formation in glass by poling with ArF laser excitation
Appl. Phys. Lett. 71, 993–995 (1997)
https://doi.org/10.1063/1.119749
Formation and laser-induced-fluorescence study of SiO+ ions produced by laser ablation of Si in oxygen gas
Appl. Phys. Lett. 71, 996–998 (1997)
https://doi.org/10.1063/1.119750
Solid-state tunable cavity lasing in a poly(para-phenylene vinylene) derivative alternating block co-polymer
Appl. Phys. Lett. 71, 999–1001 (1997)
https://doi.org/10.1063/1.119751
Using strained system materials to improve the performance of 850 nm surface- and edge-emitting lasers
Appl. Phys. Lett. 71, 1002–1004 (1997)
https://doi.org/10.1063/1.119708
Deposition-induced photoluminescence quenching of tris-(8-hydroxyquinoline) aluminum
Appl. Phys. Lett. 71, 1005–1007 (1997)
https://doi.org/10.1063/1.119709
Contradirectional two-wave mixing in Rh-doped crystal
Appl. Phys. Lett. 71, 1011–1013 (1997)
https://doi.org/10.1063/1.119711
Demonstration of waveguide couplers fabricated using microtransfer molding
Appl. Phys. Lett. 71, 1017–1019 (1997)
https://doi.org/10.1063/1.119713
Room temperature 1.54 m light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
Appl. Phys. Lett. 71, 1023–1025 (1997)
https://doi.org/10.1063/1.119715
Wavelength control in II–VI laser diodes with first order distributed Bragg reflectors
Appl. Phys. Lett. 71, 1026–1028 (1997)
https://doi.org/10.1063/1.119716
Second-harmonic generation in germanosilicate glass poled with ArF laser irradiation
Appl. Phys. Lett. 71, 1032–1034 (1997)
https://doi.org/10.1063/1.119718
Effects of the auxiliary electrode radius during plasma immersion ion implantation of a small cylindrical bore
Appl. Phys. Lett. 71, 1035–1037 (1997)
https://doi.org/10.1063/1.119719
Selective thermal decomposition of ultrathin silicon oxide layers induced by electron-stimulated oxygen desorption
Appl. Phys. Lett. 71, 1038–1040 (1997)
https://doi.org/10.1063/1.119720
Thin films of layered-structure solid solution for ferroelectric random access memory devices
Appl. Phys. Lett. 71, 1041–1043 (1997)
https://doi.org/10.1063/1.119721
Observation and control of surface morphology of AlP grown by atomic layer epitaxy
Appl. Phys. Lett. 71, 1044–1046 (1997)
https://doi.org/10.1063/1.119722
Epitaxial thin films on (001)
C. L. Chen; Y. Cao; Z. J. Huang; Q. D. Jiang; Z. Zhang; Y. Y. Sun; W. N. Kang; L. M. Dezaneti; W. K. Chu; C. W. Chu
Appl. Phys. Lett. 71, 1047–1049 (1997)
https://doi.org/10.1063/1.119723
Surface tensions and anchoring transitions of nematic liquid crystals on gradually oxidized substrates
Appl. Phys. Lett. 71, 1050–1052 (1997)
https://doi.org/10.1063/1.119724
Microstructure studies of bulk amorphous alloy by electron diffraction intensity analysis
Appl. Phys. Lett. 71, 1053–1055 (1997)
https://doi.org/10.1063/1.119725
Determination of the bonding of alkyl monolayers to the Si(111) surface using chemical-shift, scanned-energy photoelectron diffraction
Jeff Terry; Matthew R. Linford; Christer Wigren; Renyu Cao; Piero Pianetta; Christopher E. D. Chidsey
Appl. Phys. Lett. 71, 1056–1058 (1997)
https://doi.org/10.1063/1.119726
Effect of roughness on the measurement of nanohardness—a computer simulation study
Appl. Phys. Lett. 71, 1059–1061 (1997)
https://doi.org/10.1063/1.119727
Role of defect distributions and mobility on ferroelectric phase transformations in lead zirconate titanate
Appl. Phys. Lett. 71, 1062–1064 (1997)
https://doi.org/10.1063/1.119728
Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films
Appl. Phys. Lett. 71, 1065–1067 (1997)
https://doi.org/10.1063/1.119729
High carrier lifetime InSb grown on GaAs substrates
E. Michel; H. Mohseni; J. D. Kim; J. Wojkowski; J. Sandven; J. Xu; M. Razeghi; R. Bredthauer; P. Vu; W. Mitchel; M. Ahoujja
Appl. Phys. Lett. 71, 1071–1073 (1997)
https://doi.org/10.1063/1.119731
Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si
Appl. Phys. Lett. 71, 1074–1076 (1997)
https://doi.org/10.1063/1.119732
Atomic nitrogen doping in -ZnSe molecular beam epitaxial growth with almost 100% activation ratio
Appl. Phys. Lett. 71, 1077–1079 (1997)
https://doi.org/10.1063/1.119733
Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots
Appl. Phys. Lett. 71, 1083–1085 (1997)
https://doi.org/10.1063/1.120553
Semiconductor nanostructures formed by the Turing instability
Appl. Phys. Lett. 71, 1086–1088 (1997)
https://doi.org/10.1063/1.119735
Persistent photoconductivity in -type GaN
Appl. Phys. Lett. 71, 1092–1094 (1997)
https://doi.org/10.1063/1.119924
Selection of substrate orientation and phosphorus flux to achieve -type carbon doping of by molecular beam epitaxy
Appl. Phys. Lett. 71, 1095–1097 (1997)
https://doi.org/10.1063/1.119737
Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film dielectrics
Appl. Phys. Lett. 71, 1101–1103 (1997)
https://doi.org/10.1063/1.119739
Indirect enhancement of PbS photoconductivity by ferroelectric field effect in a heterostructure
Appl. Phys. Lett. 71, 1104–1106 (1997)
https://doi.org/10.1063/1.119740
Gettering of iron in silicon-on-insulator wafers
Kevin L. Beaman; Aditya Agarwal; Oleg Kononchuk; Sergei Koveshnikov; Irina Bondarenko; George A. Rozgonyi
Appl. Phys. Lett. 71, 1107–1109 (1997)
https://doi.org/10.1063/1.119741
Possibility of a single electron tunneling diode and a controllable saturated tunneling current
Appl. Phys. Lett. 71, 1113–1115 (1997)
https://doi.org/10.1063/1.119743
Optically detected cyclotron resonance properties of high purity ZnSe epitaxial layers grown on GaAs
Appl. Phys. Lett. 71, 1116–1117 (1997)
https://doi.org/10.1063/1.119744
Space-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs
Appl. Phys. Lett. 71, 1118–1120 (1997)
https://doi.org/10.1063/1.119745
High temperature superconducting Josephson junctions in a stacked bicrystal geometry
Appl. Phys. Lett. 71, 1121–1123 (1997)
https://doi.org/10.1063/1.119746
Low-field magnetoresistive properties of polycrystalline and epitaxial perovskite manganite films
Appl. Phys. Lett. 71, 1124–1126 (1997)
https://doi.org/10.1063/1.119747
New equations for domain wall dynamics with nonconservation of magnetization modulus
Appl. Phys. Lett. 71, 1127–1129 (1997)
https://doi.org/10.1063/1.119748
Irreversible refrigerators under per-unit-time coefficient of performance optimization
Appl. Phys. Lett. 71, 1130–1132 (1997)
https://doi.org/10.1063/1.120437
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.