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Volume 71, Issue 4

28 July 1997

All Issues

ISSN 0003-6951

EISSN 1077-3118

Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

C.-K. Sun; T.-L. Chiu; S. Keller; G. Wang; M. S. Minsky; S. P. DenBaars; J. E. Bowers

Appl. Phys. Lett. 71, 425–427 (1997) https://doi.org/10.1063/1.119568

Abstract

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Preparation and characterization of sol-gel derived ${Er}^{3+} :$ ${Al}_{2} O_{3} {-SiO}_{2}$ planar waveguides

M. Benatsou; B. Capoen; M. Bouazaoui; W. Tchana; J. P. Vilcot

Appl. Phys. Lett. 71, 428–430 (1997) https://doi.org/10.1063/1.119569

Abstract

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Changes in electrical conductance of hydrogenated amorphous silicon deposited on optical waveguides in glass

P. Danesh; B. Pantchev

Appl. Phys. Lett. 71, 431–433 (1997) https://doi.org/10.1063/1.119570

Abstract

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Ultrafast all-optical switch using complex refractive index changes of thin films containing photochromic dye

Kyoichi Sasaki; Toshihiko Nagamura

Appl. Phys. Lett. 71, 434–436 (1997) https://doi.org/10.1063/1.119571

Abstract

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Use of solid electrolytic erosion for generating nano-aperture near-field collectors

David Mulin; Daniel Courjon; Jean-Pierre Malugani; Bernard Gauthier-Manuel

Appl. Phys. Lett. 71, 437–439 (1997) https://doi.org/10.1063/1.120439

Abstract

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Electrically pumped tunable terahertz emitter based on intersubband transition

Bin Xu; Qing Hu; Michael R. Melloch

Appl. Phys. Lett. 71, 440–442 (1997) https://doi.org/10.1063/1.119572

Abstract

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Active mode locking of a $p$ -Ge hot hole laser

J. N. Hovenier; A. V. Muravjov; S. G. Pavlov; V. N. Shastin; R. C. Strijbos; W. Th. Wenckebach

Appl. Phys. Lett. 71, 443–445 (1997) https://doi.org/10.1063/1.119573

Abstract

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An optically addressed modulator based on low-temperature-grown multiple quantum well GaAlAs

Parviz Tayebati; Christos Hantzis; Ergun Canoglu; Robert N. Sacks

Appl. Phys. Lett. 71, 446–448 (1997) https://doi.org/10.1063/1.119574

Abstract

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THz optical beat frequency generation from a single mode locked semiconductor laser

M. D. Pelusi; H. F. Liu; D. Novak; Y. Ogawa

Appl. Phys. Lett. 71, 449–451 (1997) https://doi.org/10.1063/1.119575

Abstract

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Demonstration of a micro far-infrared Smith–Purcell emitter

M. Goldstein; J. E. Walsh; M. F. Kimmitt; J. Urata; C. L. Platt

Appl. Phys. Lett. 71, 452–454 (1997) https://doi.org/10.1063/1.119576

Abstract

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Optical metastability in bulk GaN single crystals

I. K. Shmagin; J. F. Muth; J. H. Lee; R. M. Kolbas; C. M. Balkas; Z. Sitar; R. F. Davis

Appl. Phys. Lett. 71, 455–457 (1997) https://doi.org/10.1063/1.119577

Abstract

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Aspect ratio independent etching of dielectrics

Gyeong S. Hwang; Konstantinos P. Giapis

Appl. Phys. Lett. 71, 458–460 (1997) https://doi.org/10.1063/1.119578

Abstract

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Switching behavior of surface stabilized ferroelectric liquid crystals induced by pulse voltages

Teiyu Sako; Nobuyuki Itoh; Akira Sakaigawa; Mitsuhiro Koden

Appl. Phys. Lett. 71, 461–463 (1997) https://doi.org/10.1063/1.119579

Abstract

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Bulk amorphous alloys with high mechanical strength and good soft magnetic properties in Fe–TM–B (⁠ $TM=IV–VIII$ group transition metal) system

Akihisa Inoue; Tao Zhang; Akira Takeuchi

Appl. Phys. Lett. 71, 464–466 (1997) https://doi.org/10.1063/1.119580

Abstract

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Thermal stability of Ir/polycrystalline-Si structure for bottom electrode of integrated ferroelectric capacitors

Yoo-Chan Jeon; Jeong-Min Seon; Jae-Hyun Joo; Ki-Young Oh; Jae-Sung Roh; Jae-Jeong Kim; Dae-Sik Kim

Appl. Phys. Lett. 71, 467–469 (1997) https://doi.org/10.1063/1.119581

Abstract

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Powder diffraction from compressed molecular hydrogen in a diamond-anvil cell

Stanislav P. Besedin; Andrew P. Jephcoat; Michael Hanfland; Daniel Häusermann

Appl. Phys. Lett. 71, 470–472 (1997) https://doi.org/10.1063/1.119582

Abstract

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Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy

Oliver Brandt; Hui Yang; Achim Trampert; Matthias Wassermeier; Klaus H. Ploog

Appl. Phys. Lett. 71, 473–475 (1997) https://doi.org/10.1063/1.119583

Abstract

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Fracture toughness and fatigue-crack propagation in a Zr–Ti–Ni–Cu–Be bulk metallic glass

C. J. Gilbert; R. O. Ritchie; W. L. Johnson

Appl. Phys. Lett. 71, 476–478 (1997) https://doi.org/10.1063/1.119610

Abstract

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Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy

Marko Jalonen; Mika Toivonen; Pekka Savolainen; Jukka Köngäs; Markus Pessa

Appl. Phys. Lett. 71, 479–481 (1997) https://doi.org/10.1063/1.119584

Abstract

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Photoluminescence of ${CuInS}_{2}$ thin films and solar cells modified by postdeposition treatments

K. Töpper; J. Bruns; R. Scheer; M. Weber; A. Weidinger; D. Bräunig

Appl. Phys. Lett. 71, 482–484 (1997) https://doi.org/10.1063/1.119585

Abstract

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The effect of nitrogen ions emitted from a plasma source on molecular beam epitaxial growth of p-ZnSe:N

K. Kimura; S. Miwa; H. Kajiyama; T. Yasuda; L. H. Kuo; C. G. Jin; K. Tanaka; T. Yao

Appl. Phys. Lett. 71, 485–487 (1997) https://doi.org/10.1063/1.119586

Abstract

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Laser emission from photonic dots

M. Röhner; J. P. Reithmaier; A. Forchel; F. Schäfer; H. Zull

Appl. Phys. Lett. 71, 488–490 (1997) https://doi.org/10.1063/1.119587

Abstract

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Auger recombination dynamics of ${Hg}_{0.795} {Cd}_{0.205} Te$ in the high excitation regime

C. M. Ciesla; B. N. Murdin; T. J. Phillips; A. M. White; A. R. Beattie; C. J. G. M. Langerak; C. T. Elliott; C. R. Pidgeon; S. Sivananthan

Appl. Phys. Lett. 71, 491–493 (1997) https://doi.org/10.1063/1.119588

Abstract

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AlGaAs/GaAs high electron mobility transistor with a low-temperature grown GaAs ion damage blocking layer

Ching-Hui Chen; James P. Ibbetson; Evelyn L. Hu; Umesh K. Mishra

Appl. Phys. Lett. 71, 494–496 (1997) https://doi.org/10.1063/1.119608

Abstract

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Far-infrared study of a laterally confined electron gas formed by molecular beam epitaxial regrowth on a patterned (100) $n^{+}$ -GaAs substrate

D. D. Arnone; S. Cina; J. H. Burroughes; S. N. Holmes; T. Burke; H. P. Hughes; D. A. Ritchie; M. Pepper

Appl. Phys. Lett. 71, 497–499 (1997) https://doi.org/10.1063/1.119589

Abstract

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Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide $({Ta}_{2} O_{5})$ films by zero-bias thermally stimulated current spectroscopy

W. S. Lau; L. Zhong; Allen Lee; C. H. See; Taejoon Han; N. P. Sandler; T. C. Chong

Appl. Phys. Lett. 71, 500–502 (1997) https://doi.org/10.1063/1.119590

Abstract

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The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopy

J. Dalfors; T. Lundström; P. O. Holtz; H. H. Radamson; B. Monemar; J. Wallin; G. Landgren

Appl. Phys. Lett. 71, 503–505 (1997) https://doi.org/10.1063/1.119591

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Deep level capture barrier in molecular beam epitaxial grown ${AlAs}_{y} {Sb}_{1−y}$ measured by isothermal capacitance transient spectroscopy

D. K. Johnstone; Y. K. Yeo; R. L. Hengehold; G. W. Turner

Appl. Phys. Lett. 71, 506–508 (1997) https://doi.org/10.1063/1.119592

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Novel wet chemical etch for nanostructures based on II-VI compounds

A. Osinsky; Y. Qiu; J. Mahan; H. Temkin; S. A. Gurevich; S. I. Nesterov; E. M. Tanklevskaia; V. Tretyakov; O. A. Lavrova; V. I. Skopina

Appl. Phys. Lett. 71, 509–511 (1997) https://doi.org/10.1063/1.119593

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Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers

H. Kitabayashi; T. Waho; M. Yamamoto

Appl. Phys. Lett. 71, 512–514 (1997) https://doi.org/10.1063/1.119594

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Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

A. G. U. Perera; W. Z. Shen; W. C. Mallard; M. O. Tanner; K. L. Wang

Appl. Phys. Lett. 71, 515–517 (1997) https://doi.org/10.1063/1.119595

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High voltage GaInP/GaAs dual-material Schottky rectifiers

K. J. Schoen; E. S. Harmon; J. M. Woodall; T. P. Chin

Appl. Phys. Lett. 71, 518–520 (1997) https://doi.org/10.1063/1.119596

Abstract

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Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots

G. A. M. Sáfar; W. N. Rodrigues; L. A. Cury; H. Chacham; M. V. B. Moreira; S. L. S. Freire; A. G. de Oliveira

Appl. Phys. Lett. 71, 521–523 (1997) https://doi.org/10.1063/1.119597

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Characterization of the dominant midgap levels in Si-doped GaN by optical-isothermal capacitance transient spectroscopy

P. Hacke; H. Okushi

Appl. Phys. Lett. 71, 524–526 (1997) https://doi.org/10.1063/1.119598

Abstract

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Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)

H. Marchand; P. Desjardins; S. Guillon; J.-E. Paultre; Z. Bougrioua; R. Y.-F. Yip; R. A. Masut

Appl. Phys. Lett. 71, 527–529 (1997) https://doi.org/10.1063/1.119609

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Microwave measurement of shot noise in resonant tunneling diodes

A. Przadka; K. J. Webb; D. B. Janes; H. C. Liu; Z. R. Wasilewski

Appl. Phys. Lett. 71, 530–532 (1997) https://doi.org/10.1063/1.119599

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Improved quality of ${CuGaSe}_{2}$ and ${CuAlSe}_{2}$ epilayers grown on ${CuGa}_{0.96} {In}_{0.04} {Se}_{2}$ substrates

Shigefusa Chichibu; Hisayuki Nakanishi; Sho Shirakata; Shigehiro Isomura; Hideto Miyake; Koichi Sugiyama

Appl. Phys. Lett. 71, 533–535 (1997) https://doi.org/10.1063/1.119600

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Current-density enhancements of the highest- $T_{c}$ superconductors with GeV protons

J. R. Thompson; L. Krusin-Elbaum; D. K. Christen; K. J. Song; M. Paranthaman; J. L. Ullmann; J. Z. Wu; Z. F. Ren; J. H. Wang; J. E. Tkaczyk; J. A. DeLuca

Appl. Phys. Lett. 71, 536–538 (1997) https://doi.org/10.1063/1.119601

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Switching fields and magnetostatic interactions of thin film magnetic nanoelements

K. J. Kirk; J. N. Chapman; C. D. W. Wilkinson

Appl. Phys. Lett. 71, 539–541 (1997) https://doi.org/10.1063/1.119602

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Photothermal approach to magnetoresistance monitoring in magnetic multilayers

J. P. Roger; A. C. Boccara; T. Valet

Appl. Phys. Lett. 71, 542–544 (1997) https://doi.org/10.1063/1.119603

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Study of shear force between glass microprobe and mica surface under controlled humidity

Takaharu Okajima; Shunsuke Hirotsu

Appl. Phys. Lett. 71, 545–547 (1997) https://doi.org/10.1063/1.119604

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Preparation of piezoelectric-coefficient modulated multilayer film ${ZnO/Al}_{2} O_{3}$ and its ultrahigh frequency resonance

W. S. Hu; Z. G. Liu; R. X. Wu; Y.-F. Chen; W. Ji; T. Yu; D. Feng

Appl. Phys. Lett. 71, 548–550 (1997) https://doi.org/10.1063/1.119605

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Velocity distributions of molecules ejected in laser ablation

Leonid V. Zhigilei; Barbara J. Garrison

Appl. Phys. Lett. 71, 551–553 (1997) https://doi.org/10.1063/1.119606

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Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process

J. S. Lee; K. S. Liu; I. N. Lin

Appl. Phys. Lett. 71, 554–556 (1997) https://doi.org/10.1063/1.119607

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Erratum: “Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors” [Appl. Phys. Lett. 68, 1972 (1996)]

R. P. Joshi; J. A. McAdoo

Appl. Phys. Lett. 71, 557 (1997) https://doi.org/10.1063/1.120558

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Erratum: “Cathodoluminescence study of GaAs quantum wells and of submicron dots fabricated by magnetron reactive ion etching” [Appl. Phys. Lett. 70, 408 (1997)]

L.-L. Chao; G. S. Cargill, III; M. Levy; R. M. Osgood, Jr.; G. F. McLane

Appl. Phys. Lett. 71, 558 (1997) https://doi.org/10.1063/1.120559

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Erratum: “A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel” [Appl. Phys. Lett. 70, 850 (1997)]

Lingjie Guo; Effendi Leobandung; Stephen Y. Chou

Appl. Phys. Lett. 71, 558 (1997) https://doi.org/10.1063/1.120560

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