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Volume 71, Issue 22

1 December 1997

All Issues

ISSN 0003-6951

EISSN 1077-3118

Noncontact nanosecond-time-resolution temperature measurement in excimer laser heating of Ni–P disk substrates

Shaochen Chen; Costas P. Grigoropoulos

Appl. Phys. Lett. 71, 3191–3193 (1997) https://doi.org/10.1063/1.120286

Abstract

View articletitled, Noncontact nanosecond-time-resolution temperature measurement in excimer laser heating of Ni–P disk substrates

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Luminescent intrazeolitic Si nanoclusters: Size study by Si K and $L_{2,3}$ x-ray absorption near-edge structure, x-ray photoelectron and photoluminescence spectroscopies

Jiliang He; Dennis D. Klug; John S. Tse; Chris I. Ratcliffe; Keith F. Preston

Appl. Phys. Lett. 71, 3194–3196 (1997) https://doi.org/10.1063/1.120287

Abstract

View articletitled, Luminescent intrazeolitic Si nanoclusters: Size study by Si K and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>L</mi><mrow><mtext>2,3</mtext></mrow></msub></math> x-ray absorption near-edge structure, x-ray photoelectron and photoluminescence spectroscopies

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Photolithographic patterning of vacuum-deposited organic light emitting devices

P. F. Tian; P. E. Burrows; S. R. Forrest

Appl. Phys. Lett. 71, 3197–3199 (1997) https://doi.org/10.1063/1.120288

Abstract

View articletitled, Photolithographic patterning of vacuum-deposited organic light emitting devices

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Characterization of intra-cavity reflections by Fourier transforming spectral data of optically pumped InGaN lasers

Daniel Hofstetter; Linda T. Romano; Robert L. Thornton; David P. Bour; N. M. Johnson

Appl. Phys. Lett. 71, 3200–3202 (1997) https://doi.org/10.1063/1.120289

Abstract

View articletitled, Characterization of intra-cavity reflections by Fourier transforming spectral data of optically pumped InGaN lasers

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Theoretical analysis of horizontal shear mode piezoelectric surface acoustic waves in potassium niobate

Kiyoshi Nakamura; Mitsuhiro Oshiki

Appl. Phys. Lett. 71, 3203–3205 (1997) https://doi.org/10.1063/1.120290

Abstract

View articletitled, Theoretical analysis of horizontal shear mode piezoelectric surface acoustic waves in potassium niobate

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Mass spectrometric determination of the percent dissociation of a high-density chlorine plasma

G. A. Gaddy; S. F. Webb; Rik Blumenthal

Appl. Phys. Lett. 71, 3206–3208 (1997) https://doi.org/10.1063/1.120291

Abstract

View articletitled, Mass spectrometric determination of the percent dissociation of a high-density chlorine plasma

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Evolution of defect-related structure in the x-ray absorption spectra of buried ${SiN}_{x}$ films

E. C. Paloura

Appl. Phys. Lett. 71, 3209–3211 (1997) https://doi.org/10.1063/1.120292

Abstract

View articletitled, Evolution of defect-related structure in the x-ray absorption spectra of buried <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>x</mi></mrow></msub></math> films

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Dielectric properties of lithium triborate single crystals

Ji Won Kim; Choon Sup Yoon; H. G. Gallagher

Appl. Phys. Lett. 71, 3212–3214 (1997) https://doi.org/10.1063/1.120293

Abstract

View articletitled, Dielectric properties of lithium triborate single crystals

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Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films

J. von Borany; R. Grötzschel; K. H. Heinig; A. Markwitz; W. Matz; B. Schmidt; W. Skorupa

Appl. Phys. Lett. 71, 3215–3217 (1997) https://doi.org/10.1063/1.120294

Abstract

View articletitled, Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films

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An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements

C. H. Ling; Z. Y. Cheng

Appl. Phys. Lett. 71, 3218–3220 (1997) https://doi.org/10.1063/1.120295

Abstract

View articletitled, An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements

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Improvement of leakage current characteristics of ${Ba}_{0.5} {Sr}_{0.5} {TiO}_{3}$ films by $N_{2} O$ plasma surface treatment

Hag-Ju Cho; Sejun Oh; Chang Seok Kang; Cheol Seong Hwang; Byoung Taek Lee; Ki Hoon Lee; Hideki Horii; Sang In Lee; Moon Yong Lee

Appl. Phys. Lett. 71, 3221–3223 (1997) https://doi.org/10.1063/1.120296

Abstract

View articletitled, Improvement of leakage current characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> films by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> plasma surface treatment

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Evidence of compensating centers as origin of yellow luminescence in GaN

E. F. Schubert; I. D. Goepfert; J. M. Redwing

Appl. Phys. Lett. 71, 3224–3226 (1997) https://doi.org/10.1063/1.120297

Abstract

View articletitled, Evidence of compensating centers as origin of yellow luminescence in GaN

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Observation of strain relaxation phenomena in buried and nonburied III–V surface gratings through high resolution x-ray diffraction

L. Leprince; G. T. Baumbach; A. Talneau; M. Gailhanou; J. Schneck

Appl. Phys. Lett. 71, 3227–3229 (1997) https://doi.org/10.1063/1.120298

Abstract

View articletitled, Observation of strain relaxation phenomena in buried and nonburied III–V surface gratings through high resolution x-ray diffraction

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Ultimate limit for defect generation in ultra-thin silicon dioxide

D. J. DiMaria; J. H. Stathis

Appl. Phys. Lett. 71, 3230–3232 (1997) https://doi.org/10.1063/1.120299

Abstract

View articletitled, Ultimate limit for defect generation in ultra-thin silicon dioxide

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Mechanism of organization of three-dimensional islands in SiGe/Si multilayers

E. Mateeva; P. Sutter; J. C. Bean; M. G. Lagally

Appl. Phys. Lett. 71, 3233–3235 (1997) https://doi.org/10.1063/1.120300

Abstract

View articletitled, Mechanism of organization of three-dimensional islands in SiGe/Si multilayers

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$1/f$ dielectric polarization noise in silicon $p-n$ junctions

Makoto Akiba

Appl. Phys. Lett. 71, 3236–3238 (1997) https://doi.org/10.1063/1.120301

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1/f</mtext></math> dielectric polarization noise in silicon <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-n</mi></math> junctions

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Conduction band spectra in self-assembled InAs/GaAs dots: A comparison of effective mass and an eight-band approach

Hongtao Jiang; Jasprit Singh

Appl. Phys. Lett. 71, 3239–3241 (1997) https://doi.org/10.1063/1.120302

Abstract

View articletitled, Conduction band spectra in self-assembled InAs/GaAs dots: A comparison of effective mass and an eight-band approach

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Polarization of an organic monomeric glass

T. E. Karis; R. J. Twieg; P. M. Lundquist; J. F. Castro

Appl. Phys. Lett. 71, 3242–3244 (1997) https://doi.org/10.1063/1.120303

Abstract

View articletitled, Polarization of an organic monomeric glass

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Polarization threshold switches based on ordered GaInP

E. Greger; P. Riel; M. Moser; T. Kippenberg; P. Kiesel; G. H. Döhler

Appl. Phys. Lett. 71, 3245–3247 (1997) https://doi.org/10.1063/1.120304

Abstract

View articletitled, Polarization threshold switches based on ordered GaInP

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Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

C. C. Hsu; Y. F. Yang; H. J. Ou; E. S. Yang; H. B. Lo

Appl. Phys. Lett. 71, 3248–3250 (1997) https://doi.org/10.1063/1.120305

Abstract

View articletitled, Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

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High performance ${InAs/Ga}_{1-x} {In}_{x} Sb$ superlattice infrared photodiodes

F. Fuchs; U. Weimer; W. Pletschen; J. Schmitz; E. Ahlswede; M. Walther; J. Wagner; P. Koidl

Appl. Phys. Lett. 71, 3251–3253 (1997) https://doi.org/10.1063/1.120551

Abstract

View articletitled, High performance <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">InAs/Ga</mi><mrow><mi mathvariant="normal">1-x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Sb</mi></math> superlattice infrared photodiodes

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Selective positioning of InAs self-organized quantum dots on sub-250 nm GaAs facets

R. Tsui; R. Zhang; K. Shiralagi; H. Goronkin

Appl. Phys. Lett. 71, 3254–3256 (1997) https://doi.org/10.1063/1.120306

Abstract

View articletitled, Selective positioning of InAs self-organized quantum dots on sub-250 nm GaAs facets

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Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy

J. Y. Leem; J. S. Son; C. R. Lee; C. S. Kim; Y. K. Cho; Hwack J. Lee; S. K. Noh; I. H. Bae

Appl. Phys. Lett. 71, 3257–3259 (1997) https://doi.org/10.1063/1.120307

Abstract

View articletitled, Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy

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Short-wavelength photoluminescence and electroluminescence in Ga(Al)P/GaP staggered type II quantum wells

M. Gerhold; K. Kamath; P. Bhattacharya

Appl. Phys. Lett. 71, 3260–3262 (1997) https://doi.org/10.1063/1.120320

Abstract

View articletitled, Short-wavelength photoluminescence and electroluminescence in Ga(Al)P/GaP staggered type II quantum wells

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The analysis of one-dimensional conductance quantization in ${V|amorphous-V}_{2} O_{5} |V$ thin film devices

Eui-Jung Yun; Jwa-Yeon Kim; R. M. Walser

Appl. Phys. Lett. 71, 3263–3265 (1997) https://doi.org/10.1063/1.120321

Abstract

View articletitled, The analysis of one-dimensional conductance quantization in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">V|amorphous-V</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><mi mathvariant="normal" xmlns="">|V</mi></math> thin film devices

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Is the $c(4×4)$ reconstruction of Si(001) associated with the presence of carbon?

Kazushi Miki; Kunihiro Sakamoto; Tsunenori Sakamoto

Appl. Phys. Lett. 71, 3266–3268 (1997) https://doi.org/10.1063/1.120308

Abstract

View articletitled, Is the <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">c(4×4)</mtext></math> reconstruction of Si(001) associated with the presence of carbon?

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Auger recombination in 4H-SiC: Unusual temperature behavior

A. Galeckas; J. Linnros; V. Grivickas; U. Lindefelt; C. Hallin

Appl. Phys. Lett. 71, 3269–3271 (1997) https://doi.org/10.1063/1.120309

Abstract

View articletitled, Auger recombination in 4H-SiC: Unusual temperature behavior

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Comparison of trimethylgallium and triethylgallium for the growth of GaN

A. Saxler; D. Walker; P. Kung; X. Zhang; M. Razeghi; J. Solomon; W. C. Mitchel; H. R. Vydyanath

Appl. Phys. Lett. 71, 3272–3274 (1997) https://doi.org/10.1063/1.120310

Abstract

View articletitled, Comparison of trimethylgallium and triethylgallium for the growth of GaN

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Simultaneous mapping of bulk and surface recombination in silicon

Hans-Christoph Ostendorf; Arthur L. Endrös

Appl. Phys. Lett. 71, 3275–3277 (1997) https://doi.org/10.1063/1.120311

Abstract

View articletitled, Simultaneous mapping of bulk and surface recombination in silicon

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Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?

E. S. Tok; T. S. Jones; J. H. Neave; J. Zhang; B. A. Joyce

Appl. Phys. Lett. 71, 3278–3280 (1997) https://doi.org/10.1063/1.120312

Abstract

View articletitled, Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?

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Low-threshold quasi-cw type-II quantum well lasers at wavelengths beyond 4 μm

Chih-Hsiang Lin; S. S. Pei; H. Q. Le; J. R. Meyer; C. L. Felix

Appl. Phys. Lett. 71, 3281–3283 (1997) https://doi.org/10.1063/1.120313

Abstract

View articletitled, Low-threshold quasi-cw type-II quantum well lasers at wavelengths beyond 4 μm

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Photoinduced hole-doping effect in ${(Y}_{0.5} {Ca}_{0.5} {)Ba}_{2} {Cu}_{3} O_{δ}$ films

C. L. Lin; Y. K. Lin; C. C. Chi; W. Y. Guan; M. K. Wu

Appl. Phys. Lett. 71, 3284–3286 (1997) https://doi.org/10.1063/1.120323

Abstract

View articletitled, Photoinduced hole-doping effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Y</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)Ba</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">δ</mi></mrow></msub></math> films

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Current carrying capability of multifilamentary ${(BiPb)}_{2} {Sr}_{2} {Ca}_{2} {Cu}_{3} O_{x}$ tapes determined from transport and magnetization measurements

C. Reimann; O. Waldmann; P. Müller; M. Leghissa; B. Roas

Appl. Phys. Lett. 71, 3287–3289 (1997) https://doi.org/10.1063/1.120314

Abstract

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Magnetic properties and magnetic domain structures of ${NdFe}_{10.5} {Mo}_{1.5}$ and ${NdFe}_{10.5} {Mo}_{1.5} N_{x}$

Jinbo Yang; Weihua Mao; Benpei Cheng; Yingchang Yang; Hai Xu; Baoshan Han; Senlin Ge; Wanjun Ku

Appl. Phys. Lett. 71, 3290–3292 (1997) https://doi.org/10.1063/1.120315

Abstract

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Improved spatial resolution in magnetic force microscopy

George D. Skidmore; E. Dan Dahlberg

Appl. Phys. Lett. 71, 3293–3295 (1997) https://doi.org/10.1063/1.120316

Abstract

View articletitled, Improved spatial resolution in magnetic force microscopy

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Magnetic tunnel junctions with in situ naturally-oxidized tunnel barrier

H. Tsuge; T. Mitsuzuka

Appl. Phys. Lett. 71, 3296–3298 (1997) https://doi.org/10.1063/1.120317

Abstract

View articletitled, Magnetic tunnel junctions with in situ naturally-oxidized tunnel barrier

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Contribution of current perpendicular to the plane to the giant magnetoresistance of laterally modulated spin values

A. Encinas; F. Nguyen Van Dau; M. Sussiau; A. Schuhl; P. Galtier

Appl. Phys. Lett. 71, 3299–3301 (1997) https://doi.org/10.1063/1.120318

Abstract

View articletitled, Contribution of current perpendicular to the plane to the giant magnetoresistance of laterally modulated spin values

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Charging of substrates irradiated by particle beams

P. N. Guzdar; A. S. Sharma; S. K. Guharay

Appl. Phys. Lett. 71, 3302–3304 (1997) https://doi.org/10.1063/1.120319

Abstract

View articletitled, Charging of substrates irradiated by particle beams

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Determination of the energy diagram of the dithioketopyrrolopyrrole/ ${SnO}_{2} :F$ heterojunction by surface photovoltage spectroscopy

Ellen Moons; Martin Eschle; Michael Grätzel

Appl. Phys. Lett. 71, 3305–3307 (1997) https://doi.org/10.1063/1.120322

Abstract

View articletitled, Determination of the energy diagram of the dithioketopyrrolopyrrole/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SnO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">:F</mi></math> heterojunction by surface photovoltage spectroscopy

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