Skip Nav Destination

Issues

Select Decade

Select Year

Issue

Volume 71, Issue 20

17 November 1997

All Issues

ISSN 0003-6951

EISSN 1077-3118

Maximum output power and maximum operating temperature of quantum well lasers

T. Makino; J. D. Evans; G. Mak

Appl. Phys. Lett. 71, 2871–2873 (1997) https://doi.org/10.1063/1.120201

Abstract

View articletitled, Maximum output power and maximum operating temperature of quantum well lasers

Open the PDF for in another window

Spectroscopy of a ZnCdSe/ZnSSe quantum well diode laser in high magnetic fields

Y.-K. Song; A. V. Nurmikko; T. Schmiedel; C.-C. Chu; J. Han; W.-L. Chen; R. L. Gunshor

Appl. Phys. Lett. 71, 2874–2876 (1997) https://doi.org/10.1063/1.120202

Abstract

View articletitled, Spectroscopy of a ZnCdSe/ZnSSe quantum well diode laser in high magnetic fields

Open the PDF for in another window

Hydrogen-induced light emission from an organic electroluminescent device

Sumio Okuyama; Yasuaki Ito; Toshiyuki Sugawara; Katsuro Okuyama; Koichi Matsushita; Junji Kido

Appl. Phys. Lett. 71, 2877–2879 (1997) https://doi.org/10.1063/1.120203

Abstract

View articletitled, Hydrogen-induced light emission from an organic electroluminescent device

Open the PDF for in another window

Large signal dynamics of distributed feedback lasers with spatial modulation of their coupling coefficient and grating pitch

Thierry Fessant

Appl. Phys. Lett. 71, 2880–2882 (1997) https://doi.org/10.1063/1.120204

Abstract

View articletitled, Large signal dynamics of distributed feedback lasers with spatial modulation of their coupling coefficient and grating pitch

Open the PDF for in another window

Efficient white light-emitting diodes realized with new processable blends of conjugated polymers

S. Tasch; E. J. W. List; O. Ekström; W. Graupner; G. Leising; P. Schlichting; U. Rohr; Y. Geerts; U. Scherf; K. Müllen

Appl. Phys. Lett. 71, 2883–2885 (1997) https://doi.org/10.1063/1.120205

Abstract

View articletitled, Efficient white light-emitting diodes realized with new processable blends of conjugated polymers

Open the PDF for in another window

High-efficiency and high-resolution fiber-optic probes for near field imaging and spectroscopy

M. N. Islam; X. K. Zhao; A. A. Said; S. S. Mickel; C. F. Vail

Appl. Phys. Lett. 71, 2886–2888 (1997) https://doi.org/10.1063/1.120206

Abstract

View articletitled, High-efficiency and high-resolution fiber-optic probes for near field imaging and spectroscopy

Open the PDF for in another window

Novel application of a perturbed photonic crystal: High-quality filter

Xin-Ya Lei; Hua Li; Feng Ding; Weiyi Zhang; Nai-Ben Ming

Appl. Phys. Lett. 71, 2889–2891 (1997) https://doi.org/10.1063/1.120207

Abstract

View articletitled, Novel application of a perturbed photonic crystal: High-quality filter

Open the PDF for in another window

Mid-infrared electroluminescence in GaAs/AlGaAs structures

G. Strasser; P. Kruck; M. Helm; J. N. Heyman; L. Hvozdara; E. Gornik

Appl. Phys. Lett. 71, 2892–2894 (1997) https://doi.org/10.1063/1.119329

Abstract

View articletitled, Mid-infrared electroluminescence in GaAs/AlGaAs structures

Open the PDF for in another window

Highly-sensitive passive integrated optical spiral-shaped waveguide refractometer

G. J. Veldhuis; P. V. Lambeck

Appl. Phys. Lett. 71, 2895–2897 (1997) https://doi.org/10.1063/1.120208

Abstract

View articletitled, Highly-sensitive passive integrated optical spiral-shaped waveguide refractometer

Open the PDF for in another window

Optical properties of GaN/AlGaN multiple quantum well microdisks

R. A. Mair; K. C. Zeng; J. Y. Lin; H. X. Jiang; B. Zhang; L. Dai; H. Tang; A. Botchkarev; W. Kim; H. Morkoç

Appl. Phys. Lett. 71, 2898–2900 (1997) https://doi.org/10.1063/1.120209

Abstract

View articletitled, Optical properties of GaN/AlGaN multiple quantum well microdisks

Open the PDF for in another window

Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors

Gong-Ru Lin; Ci-Ling Pan

Appl. Phys. Lett. 71, 2901–2903 (1997) https://doi.org/10.1063/1.120210

Abstract

View articletitled, Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors

Open the PDF for in another window

Photoluminescence of Nd-doped ${LiNbO}_{3}$ films prepared by pulsed laser deposition

J. E. Alfonso; M. J. Martı́n; C. Zaldo

Appl. Phys. Lett. 71, 2904–2906 (1997) https://doi.org/10.1063/1.120211

Abstract

View articletitled, Photoluminescence of Nd-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> films prepared by pulsed laser deposition

Open the PDF for in another window

Control of liquid crystal alignment by polyimide surface modification using atomic force microscopy

A. J. Pidduck; S. D. Haslam; G. P. Bryan-Brown; R. Bannister; I. D. Kitely

Appl. Phys. Lett. 71, 2907–2909 (1997) https://doi.org/10.1063/1.120212

Abstract

View articletitled, Control of liquid crystal alignment by polyimide surface modification using atomic force microscopy

Open the PDF for in another window

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers

S. D. McDougall; B. Vögele; C. R. Stanley; C. N. Ironside

Appl. Phys. Lett. 71, 2910–2912 (1997) https://doi.org/10.1063/1.120213

Abstract

View articletitled, The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers

Open the PDF for in another window

Ellipsometric monitoring of an oriented diamond nucleation process in bias-enhanced chemical vapor deposition

Yasuaki Hayashi; Xi Li; Shigehiro Nishino

Appl. Phys. Lett. 71, 2913–2915 (1997) https://doi.org/10.1063/1.120214

Abstract

View articletitled, Ellipsometric monitoring of an oriented diamond nucleation process in bias-enhanced chemical vapor deposition

Open the PDF for in another window

Removal of thin layer for trace element analysis of solid surface in subnanometer scale using laser-ablation atomic fluorescence spectroscopy

Yuji Oki; Kenji Matsunaga; Takumi Nomura; Mitsuo Maeda

Appl. Phys. Lett. 71, 2916–2918 (1997) https://doi.org/10.1063/1.120215

Abstract

View articletitled, Removal of thin layer for trace element analysis of solid surface in subnanometer scale using laser-ablation atomic fluorescence spectroscopy

Open the PDF for in another window

Photoconductivity and charge transporting properties of metal-containing poly(⁠ $p$ -phenylenevinylene)s

Wai Kin Chan; Xiong Gong; Wai Yue Ng

Appl. Phys. Lett. 71, 2919–2921 (1997) https://doi.org/10.1063/1.120548

Abstract

View articletitled, Photoconductivity and charge transporting properties of metal-containing poly(⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-phenylenevinylene)s

Open the PDF for in another window

Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 μm

Y. C. Yan; A. J. Faber; H. de Waal; P. G. Kik; A. Polman

Appl. Phys. Lett. 71, 2922–2924 (1997) https://doi.org/10.1063/1.120216

Abstract

View articletitled, Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 μm

Open the PDF for in another window

Investigations of double capillary discharge scheme for production of wave guide in plasma

D. Kaganovich; P. V. Sasorov; Y. Ehrlich; C. Cohen; A. Zigler

Appl. Phys. Lett. 71, 2925–2927 (1997) https://doi.org/10.1063/1.120217

Abstract

View articletitled, Investigations of double capillary discharge scheme for production of wave guide in plasma

Open the PDF for in another window

How tunneling currents reduce plasma-induced charging

Gyeong S. Hwang; Konstantinos P. Giapis

Appl. Phys. Lett. 71, 2928–2930 (1997) https://doi.org/10.1063/1.120218

Abstract

View articletitled, How tunneling currents reduce plasma-induced charging

Open the PDF for in another window

Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy

Sergei Ruvimov; Zuzanna Liliental-Weber; Jack Washburn; Timothy J. Drummond; Michael Hafich; Stephen R. Lee

Appl. Phys. Lett. 71, 2931–2933 (1997) https://doi.org/10.1063/1.120219

Abstract

View articletitled, Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy

Open the PDF for in another window

Nanostructure array fabrication with a size-controllable natural lithography

Chiseki Haginoya; Masayoshi Ishibashi; Kazuyuki Koike

Appl. Phys. Lett. 71, 2934–2936 (1997) https://doi.org/10.1063/1.120220

Abstract

View articletitled, Nanostructure array fabrication with a size-controllable natural lithography

Open the PDF for in another window

Molecular scale alignment strategies: An investigation of Ag adsorption on patterned fullerene layers

A. W. Dunn; B. N. Cotier; A. Nogaret; P. Moriarty; P. H. Beton; S. P. Beaumont

Appl. Phys. Lett. 71, 2937–2939 (1997) https://doi.org/10.1063/1.120221

Abstract

View articletitled, Molecular scale alignment strategies: An investigation of Ag adsorption on patterned fullerene layers

Open the PDF for in another window

Scanning tunneling microscopy of ordered coated cluster layers on graphite

P. J. Durston; J. Schmidt; R. E. Palmer; J. P. Wilcoxon

Appl. Phys. Lett. 71, 2940–2942 (1997) https://doi.org/10.1063/1.120222

Abstract

View articletitled, Scanning tunneling microscopy of ordered coated cluster layers on graphite

Open the PDF for in another window

Formation of a crystalline phase in amorphous hydrogenated carbon-germanium films by electron beam irradiation

J. Tyczkowski; B. Pietrzyk; R. Mazurczyk; K. Polański; J. Balcerski; M. Delamar

Appl. Phys. Lett. 71, 2943–2945 (1997) https://doi.org/10.1063/1.120223

Abstract

View articletitled, Formation of a crystalline phase in amorphous hydrogenated carbon-germanium films by electron beam irradiation

Open the PDF for in another window

Microstructures of phased-in Cr–Cu/Cu/Au bump-limiting metallization and its soldering behavior with high Pb content and eutectic PbSn solders

G. Z. Pan; Ann A. Liu; H. K. Kim; K. N. Tu; Paul A. Totta

Appl. Phys. Lett. 71, 2946–2948 (1997) https://doi.org/10.1063/1.120224

Abstract

View articletitled, Microstructures of phased-in Cr–Cu/Cu/Au bump-limiting metallization and its soldering behavior with high Pb content and eutectic PbSn solders

Open the PDF for in another window

An analysis technique for extraction of thin film stresses from x-ray data

Guido Cornella; Seok-Hee Lee; William D. Nix; John C. Bravman

Appl. Phys. Lett. 71, 2949–2951 (1997) https://doi.org/10.1063/1.120225

Abstract

View articletitled, An analysis technique for extraction of thin film stresses from x-ray data

Open the PDF for in another window

In-plane aligned $\Pr_{6} O_{11}$ buffer layers by ion-beam assisted pulsed laser deposition on metal substrates

V. Betz; B. Holzapfel; D. Raouser; L. Schultz

Appl. Phys. Lett. 71, 2952–2954 (1997) https://doi.org/10.1063/1.120226

Abstract

View articletitled, In-plane aligned <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">11</mi></mrow></msub></math> buffer layers by ion-beam assisted pulsed laser deposition on metal substrates

Open the PDF for in another window

Deposition of in-plane textured MgO on amorphous ${Si}_{3} N_{4}$ substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia

C. P. Wang; K. B. Do; M. R. Beasley; T. H. Geballe; R. H. Hammond

Appl. Phys. Lett. 71, 2955–2957 (1997) https://doi.org/10.1063/1.120227

Abstract

View articletitled, Deposition of in-plane textured MgO on amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia

Open the PDF for in another window

A novel dual-gate high electron mobility transistor using a split-gate structure

N. J. Collier; J. R. A. Cleaver

Appl. Phys. Lett. 71, 2958–2960 (1997) https://doi.org/10.1063/1.120228

Abstract

View articletitled, A novel dual-gate high electron mobility transistor using a split-gate structure

Open the PDF for in another window

Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates

N. Bécourt; F. Peiró; A. Cornet; J. R. Morante; P. Gorostiza; G. Halkias; K. Michelakis; A. Georgakilas

Appl. Phys. Lett. 71, 2961–2963 (1997) https://doi.org/10.1063/1.120229

Abstract

View articletitled, Surface step bunching and crystal defects in InAlAs films grown by molecular beam epitaxy on (111)B InP substrates

Open the PDF for in another window

Low temperature photo-oxidation of silicon using a xenon excimer lamp

Jun-Ying Zhang; Ian W. Boyd

Appl. Phys. Lett. 71, 2964–2966 (1997) https://doi.org/10.1063/1.120230

Abstract

View articletitled, Low temperature photo-oxidation of silicon using a xenon excimer lamp

Open the PDF for in another window

Transverse energy spread of photoelectrons emitted from GaAs photocathodes with negative electron affinity

S. Pastuszka; D. Kratzmann; D. Schwalm; A. Wolf; A. S. Terekhov

Appl. Phys. Lett. 71, 2967–2969 (1997) https://doi.org/10.1063/1.120231

Abstract

View articletitled, Transverse energy spread of photoelectrons emitted from GaAs photocathodes with negative electron affinity

Open the PDF for in another window

Atomic origin of deep levels in $p$ -type GaN: Theory

D. J. Chadi

Appl. Phys. Lett. 71, 2970–2971 (1997) https://doi.org/10.1063/1.120232

Abstract

View articletitled, Atomic origin of deep levels in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type GaN: Theory

Open the PDF for in another window

Structural and optical properties of vertically aligned InP quantum dots

M. K. Zundel; P. Specht; K. Eberl; N. Y. Jin-Phillipp; F. Phillipp

Appl. Phys. Lett. 71, 2972–2974 (1997) https://doi.org/10.1063/1.120233

Abstract

View articletitled, Structural and optical properties of vertically aligned InP quantum dots

Open the PDF for in another window

Direct excitation spectroscopy of Er centers in porous silicon

M. Stepikhova; W. Jantsch; G. Kocher; L. Palmetshofer; M. Schoisswohl; H. J. von Bardeleben

Appl. Phys. Lett. 71, 2975–2977 (1997) https://doi.org/10.1063/1.120234

Abstract

View articletitled, Direct excitation spectroscopy of Er centers in porous silicon

Open the PDF for in another window

Ultrathin ${SiO}_{x} N_{y}$ by rapid thermal heating of silicon in $N_{2}$ at $T=760–1050 ° C$

M. L. Green; T. Sorsch; L. C. Feldman; W. N. Lennard; E. P. Gusev; E. Garfunkel; H. C. Lu; T. Gustafsson

Appl. Phys. Lett. 71, 2978–2980 (1997) https://doi.org/10.1063/1.120235

Abstract

View articletitled, Ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>y</mi></mrow></msub></math> by rapid thermal heating of silicon in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> at <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">T=760–1050 °</mtext><mi mathvariant="normal" xmlns="">C</mi></math>

Open the PDF for in another window

Investigations of Stranski-Krastanov growth kinetics of Si-dots on 6H-SiC(0001)

Andreas Fissel; Kay Pfennighaus; Wolfgang Richter

Appl. Phys. Lett. 71, 2981–2983 (1997) https://doi.org/10.1063/1.120236

Abstract

View articletitled, Investigations of Stranski-Krastanov growth kinetics of Si-dots on 6H-SiC(0001)

Open the PDF for in another window

Growth of HgCdTe and CdTe(331)B on germanium substrate by molecular beam epitaxy

J. P. Zanatta; P. Duvaut; P. Ferret; A. Million; G. Destefanis; P. Rambaud; C. Vannuffel

Appl. Phys. Lett. 71, 2984–2986 (1997) https://doi.org/10.1063/1.120237

Abstract

View articletitled, Growth of HgCdTe and CdTe(331)B on germanium substrate by molecular beam epitaxy

Open the PDF for in another window

Resistless patterning for selective growth

Kumar Shiralagi; Raymond Tsui; Herbert Goronkin

Appl. Phys. Lett. 71, 2987–2989 (1997) https://doi.org/10.1063/1.120238

Abstract

View articletitled, Resistless patterning for selective growth

Open the PDF for in another window

Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study

G. Scherb; A. Kazimirov; J. Zegenhagen; T. Schultz; R. Feidenhans’l; B. O. Fimland

Appl. Phys. Lett. 71, 2990–2992 (1997) https://doi.org/10.1063/1.120239

Abstract

View articletitled, Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study

Open the PDF for in another window

The $V^{3+}$ center in AlN

P. Thurian; I. Loa; P. Maxim; A. Hoffmann; C. Thomsen; K. Pressel

Appl. Phys. Lett. 71, 2993–2995 (1997) https://doi.org/10.1063/1.120240

Abstract

View articletitled, The <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">V</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> center in AlN

Open the PDF for in another window

Planar aluminum-implanted 1400 V $4H$ silicon carbide $p-n$ diodes with low on resistance

D. Peters; R. Schörner; K.-H. Hölzlein; P. Friedrichs

Appl. Phys. Lett. 71, 2996–2997 (1997) https://doi.org/10.1063/1.120241

Abstract

View articletitled, Planar aluminum-implanted 1400 V <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">4H</mtext></math> silicon carbide <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-n</mi></math> diodes with low on resistance

Open the PDF for in another window

The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures

A. Saher Helmy; J. S. Aitchison; J. H. Marsh

Appl. Phys. Lett. 71, 2998–3000 (1997) https://doi.org/10.1063/1.120242

Abstract

View articletitled, The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures

Open the PDF for in another window

Photothermal reflectance investigation of ion implanted 6H–SiC

K. L. Muratikov; I. O. Usov; H. G. Walther; H. Karge; A. V. Suvorov

Appl. Phys. Lett. 71, 3001–3003 (1997) https://doi.org/10.1063/1.120243

Abstract

View articletitled, Photothermal reflectance investigation of ion implanted 6H–SiC

Open the PDF for in another window

Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure

M. W. Cole; F. Ren; S. J. Pearton

Appl. Phys. Lett. 71, 3004–3006 (1997) https://doi.org/10.1063/1.120244

Abstract

View articletitled, Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure

Open the PDF for in another window

Substrate imposed stress-strain effect on photoluminescence in hydrogenated amorphous silicon alloys

Keunjoo Kim; M. S. Suh; H. W. Shim; C. J. Youn; E-K. Suh; K. B. Lee; H. J. Lee; Hwack Joo Lee; Hyun Ryu

Appl. Phys. Lett. 71, 3007–3009 (1997) https://doi.org/10.1063/1.120245

Abstract

View articletitled, Substrate imposed stress-strain effect on photoluminescence in hydrogenated amorphous silicon alloys

Open the PDF for in another window

Critical-current measurements in planar Josephson junctions

M. S. Rzchowski; B. M. Hinaus

Appl. Phys. Lett. 71, 3010–3012 (1997) https://doi.org/10.1063/1.120246

Abstract

View articletitled, Critical-current measurements in planar Josephson junctions

Open the PDF for in another window

Solution deposition and heteroepitaxial crystallization of ${LaNiO}_{3}$ electrodes for integrated ferroelectric devices

Chae Ryong Cho; David A. Payne; Seong Lae Cho

Appl. Phys. Lett. 71, 3013–3015 (1997) https://doi.org/10.1063/1.120247

Abstract

View articletitled, Solution deposition and heteroepitaxial crystallization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaNiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> electrodes for integrated ferroelectric devices

Open the PDF for in another window

Transparent nanocrystalline diamond ceramics fabricated from $C_{60}$ fullerene by shock compression

H. Hirai; K. Kondo; M. Kim; H. Koinuma; K. Kurashima; Y. Bando

Appl. Phys. Lett. 71, 3016–3018 (1997) https://doi.org/10.1063/1.120248

Abstract

View articletitled, Transparent nanocrystalline diamond ceramics fabricated from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">60</mi></mrow></msub></math> fullerene by shock compression

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Compact widely tunable laser integrated on an indium phosphide membrane platform

Tasfia Kabir, Yi Wang, et al.

Feedback cooling of an insulating high-Q diamagnetically levitated plate

S. Tian, K. Jadeja, et al.

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only