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Volume 71, Issue 19

10 November 1997

All Issues

ISSN 0003-6951

EISSN 1077-3118

Cooperative effects in blue light emission of poly-(para-phenylene)-type ladderpolymer

G. Kranzelbinder; M. Nisoli; S. Stagira; S. De Silvestri; G. Lanzani; K. Müllen; U. Scherf; W. Graupner; G. Leising

Appl. Phys. Lett. 71, 2725–2727 (1997) https://doi.org/10.1063/1.120118

Abstract

View articletitled, Cooperative effects in blue light emission of poly-(para-phenylene)-type ladderpolymer

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Resonant excitation of visible photoluminescence from an erbium-oxide overlayer on Si

A. Kasuya; M. Suezawa

Appl. Phys. Lett. 71, 2728–2730 (1997) https://doi.org/10.1063/1.120119

Abstract

View articletitled, Resonant excitation of visible photoluminescence from an erbium-oxide overlayer on Si

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Frequency locking of tunable Er:Yb microlasers to absorption lines of ${}^{13}C_{2} H_{2}$ in the 1540–1550 nm wavelength interval

P. Laporta; S. Taccheo; S. Longhi; C. Svelto; P. De Natale

Appl. Phys. Lett. 71, 2731–2733 (1997) https://doi.org/10.1063/1.120120

Abstract

View articletitled, Frequency locking of tunable Er:Yb microlasers to absorption lines of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mmultiscripts><mtext>C</mtext><mprescripts></mprescripts><mtext></mtext><mrow><mn>13</mn></mrow></mmultiscripts><msub><mrow></mrow><mn>2</mn></msub><msub><mtext>H</mtext><mn>2</mn></msub></mrow></math> in the 1540–1550 nm wavelength interval

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Coherent phonons in alkali metal-doped $C_{60}$

S. B. Fleischer; B. Pevzner; D. J. Dougherty; H. J. Zeiger; G. Dresselhaus; M. S. Dresselhaus; E. P. Ippen; A. F. Hebard

Appl. Phys. Lett. 71, 2734–2736 (1997) https://doi.org/10.1063/1.120121

Abstract

View articletitled, Coherent phonons in alkali metal-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math>

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Properties of ion exchanged planar and channel optical waveguides fabricated in Cu doped ${KTiOPO}_{4}$ substrates

L. P. Shi; T. C. Chong; Z. Zhuo; W. X. Hou; P. F. Hu

Appl. Phys. Lett. 71, 2737–2739 (1997) https://doi.org/10.1063/1.120122

Abstract

View articletitled, Properties of ion exchanged planar and channel optical waveguides fabricated in Cu doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KTiOPO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> substrates

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Visible luminescence from Pr-doped sulfide glasses

V. K. Tikhomirov; K. Iakoubovskii; P. W. Hertogen; G. J. Adriaenssens

Appl. Phys. Lett. 71, 2740–2742 (1997) https://doi.org/10.1063/1.120549

Abstract

View articletitled, Visible luminescence from Pr-doped sulfide glasses

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Optical and terahertz power limits in the low-temperature-grown GaAs photomixers

S. Verghese; K. A. McIntosh; E. R. Brown

Appl. Phys. Lett. 71, 2743–2745 (1997) https://doi.org/10.1063/1.120445

Abstract

View articletitled, Optical and terahertz power limits in the low-temperature-grown GaAs photomixers

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Prospects of new planar optical waveguides based on eutectic microcomposites of insulating crystals: The ${ZrO}_{2} (c)- {CaZrO}_{3}$ erbium doped system

V. M. Orera; J. I. Peña; R. I. Merino; J. A. Lázaro; J. A. Vallés; M. A. Rebolledo

Appl. Phys. Lett. 71, 2746–2748 (1997) https://doi.org/10.1063/1.120200

Abstract

View articletitled, Prospects of new planar optical waveguides based on eutectic microcomposites of insulating crystals: The <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">(</mi><mi mathvariant="normal" xmlns="">c</mi><mi mathvariant="normal" xmlns="">)-</mi><msub xmlns=""><mi mathvariant="normal">CaZrO</mi><mrow><mn>3</mn></mrow></msub></math> erbium doped system

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Video rate near-field scanning optical microscopy

S. J. Bukofsky; R. D. Grober

Appl. Phys. Lett. 71, 2749–2751 (1997) https://doi.org/10.1063/1.120123

Abstract

View articletitled, Video rate near-field scanning optical microscopy

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Pulsed laser deposition of liquid crystals

J. Gonzalo; P. E. Dyer; M. Hird

Appl. Phys. Lett. 71, 2752–2754 (1997) https://doi.org/10.1063/1.120124

Abstract

View articletitled, Pulsed laser deposition of liquid crystals

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Correlation between the pretilt angle of liquid crystal and the inclination angle of the polyimide backbone structure

R. Arafune; K. Sakamoto; S. Ushioda

Appl. Phys. Lett. 71, 2755–2757 (1997) https://doi.org/10.1063/1.119566

Abstract

View articletitled, Correlation between the pretilt angle of liquid crystal and the inclination angle of the polyimide backbone structure

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Direct writing of conductive aluminum line on aluminum nitride ceramics by transversely excited atmospheric ${CO}_{2}$ laser

Hiroyuki Yabe; Akihisa Takahashi; Tetsumi Sumiyoshi; Minoru Obara; Katsunori Ishii

Appl. Phys. Lett. 71, 2758–2760 (1997) https://doi.org/10.1063/1.120125

Abstract

View articletitled, Direct writing of conductive aluminum line on aluminum nitride ceramics by transversely excited atmospheric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> laser

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Thermal conductivity and heat transfer in superlattices

G. Chen; M. Neagu

Appl. Phys. Lett. 71, 2761–2763 (1997) https://doi.org/10.1063/1.120126

Abstract

View articletitled, Thermal conductivity and heat transfer in superlattices

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${SiO}_{2}$ film thickness metrology by x-ray photoelectron spectroscopy

Z. H. Lu; J. P. McCaffrey; B. Brar; G. D. Wilk; R. M. Wallace; L. C. Feldman; S. P. Tay

Appl. Phys. Lett. 71, 2764–2766 (1997) https://doi.org/10.1063/1.120438

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> film thickness metrology by x-ray photoelectron spectroscopy

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Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Xiang Lu; S. Sundar Kumar Iyer; Chenming Hu; Nathan W. Cheung; Jing Min; Zhineng Fan; Paul K. Chu

Appl. Phys. Lett. 71, 2767–2769 (1997) https://doi.org/10.1063/1.120127

Abstract

View articletitled, Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

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Highly ordered nanochannel-array architecture in anodic alumina

Hideki Masuda; Haruki Yamada; Masahiro Satoh; Hidetaka Asoh; Masashi Nakao; Toshiaki Tamamura

Appl. Phys. Lett. 71, 2770–2772 (1997) https://doi.org/10.1063/1.120128

Abstract

View articletitled, Highly ordered nanochannel-array architecture in anodic alumina

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A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates

Carrie Carter-Coman; April S. Brown; Robert A. Metzger; Nan Marie Jokerst; Jason Pickering; Lawrence A. Bottomley

Appl. Phys. Lett. 71, 2773–2775 (1997) https://doi.org/10.1063/1.120129

Abstract

View articletitled, A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates

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Effect of surface polarity on gallium adsorption on 6H-SiC surfaces

L. Li; C. Tindall; Y. Hasegawa; T. Sakurai

Appl. Phys. Lett. 71, 2776–2778 (1997) https://doi.org/10.1063/1.120130

Abstract

View articletitled, Effect of surface polarity on gallium adsorption on 6H-SiC surfaces

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Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

G. Segschneider; T. Dekorsy; H. Kurz; R. Hey; K. Ploog

Appl. Phys. Lett. 71, 2779–2781 (1997) https://doi.org/10.1063/1.120131

Abstract

View articletitled, Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

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Cu crystallographic texture control in Cu/refractory-metal layered structure as interconnects

Kazuhide Abe; Yusuke Harada; Hiroshi Onoda

Appl. Phys. Lett. 71, 2782–2784 (1997) https://doi.org/10.1063/1.120132

Abstract

View articletitled, Cu crystallographic texture control in Cu/refractory-metal layered structure as interconnects

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Intraband absorption in $n$ -doped InAs/GaAs quantum dots

S. Sauvage; P. Boucaud; F. H. Julien; J.-M. Gérard; V. Thierry-Mieg

Appl. Phys. Lett. 71, 2785–2787 (1997) https://doi.org/10.1063/1.120133

Abstract

View articletitled, Intraband absorption in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-doped InAs/GaAs quantum dots

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Fourier transform analysis of electromodulation spectra: Effects of the modulation amplitude

V. L. Alperovich; A. S. Jaroshevich; H. E. Scheibler; A. S. Terekhov; Richard L. Tober

Appl. Phys. Lett. 71, 2788–2790 (1997) https://doi.org/10.1063/1.120134

Abstract

View articletitled, Fourier transform analysis of electromodulation spectra: Effects of the modulation amplitude

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Effect of phonon bottleneck on quantum-dot laser performance

Mitsuru Sugawara; Kohki Mukai; Hajime Shoji

Appl. Phys. Lett. 71, 2791–2793 (1997) https://doi.org/10.1063/1.120135

Abstract

View articletitled, Effect of phonon bottleneck on quantum-dot laser performance

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Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

E. T. Yu; G. J. Sullivan; P. M. Asbeck; C. D. Wang; D. Qiao; S. S. Lau

Appl. Phys. Lett. 71, 2794–2796 (1997) https://doi.org/10.1063/1.120138

Abstract

View articletitled, Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

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Does a dipole layer at the $p–i$ interface reduce the built-in voltage of amorphous silicon $p–i–n$ solar cells?

A. Nuruddin; J. R. Abelson

Appl. Phys. Lett. 71, 2797–2799 (1997) https://doi.org/10.1063/1.120139

Abstract

View articletitled, Does a dipole layer at the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–i</mi></math> interface reduce the built-in voltage of amorphous silicon <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–i–n</mi></math> solar cells?

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Ion-induced effective surface diffusion in ion sputtering

Maxim A. Makeev; Albert-László Barabási

Appl. Phys. Lett. 71, 2800–2802 (1997) https://doi.org/10.1063/1.120140

Abstract

View articletitled, Ion-induced effective surface diffusion in ion sputtering

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Lateral current-constriction in vertical devices using openings in buried lattices of metallic discs

L.-E. Wernersson; N. Carlsson; B. Gustafson; A. Litwin; L. Samuelson

Appl. Phys. Lett. 71, 2803–2805 (1997) https://doi.org/10.1063/1.120141

Abstract

View articletitled, Lateral current-constriction in vertical devices using openings in buried lattices of metallic discs

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Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films

M. Nagao; T. Kondo; Y. Gotoh; H. Tsuji; J. Ishikawa; K. Miyata; K. Kobashi

Appl. Phys. Lett. 71, 2806–2808 (1997) https://doi.org/10.1063/1.120142

Abstract

View articletitled, Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films

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Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

L. Rebohle; J. von Borany; R. A. Yankov; W. Skorupa; I. E. Tyschenko; H. Fröb; K. Leo

Appl. Phys. Lett. 71, 2809–2811 (1997) https://doi.org/10.1063/1.120143

Abstract

View articletitled, Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

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Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

D. Lubben; G. Eres; G. E. Jellison, Jr.; R. D. Westbrook; R. F. Wood

Appl. Phys. Lett. 71, 2812–2814 (1997) https://doi.org/10.1063/1.120194

Abstract

View articletitled, Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

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$p$ -type arsenic doping of ${Hg}_{1−x} {Cd}_{x} Te$ by molecular beam epitaxy

M. Zandian; A. C. Chen; D. D. Edwall; J. G. Pasko; J. M. Arias

Appl. Phys. Lett. 71, 2815–2817 (1997) https://doi.org/10.1063/1.120144

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type arsenic doping of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Hg</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te</mi></math> by molecular beam epitaxy

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Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

S. Fréchengues; V. Drouot; B. Lambert; D. Lemoine; S. Loualiche; A. Le Corre; H. L’Haridon

Appl. Phys. Lett. 71, 2818–2820 (1997) https://doi.org/10.1063/1.120145

Abstract

View articletitled, Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

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Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped $n^{+}$ silicon film

Yue Kuo

Appl. Phys. Lett. 71, 2821–2823 (1997) https://doi.org/10.1063/1.120146

Abstract

View articletitled, Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup></math>silicon film

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Hot electron impact excitation cross-section of ${Er}^{3+}$ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes

S. Wang; A. Eckau; E. Neufeld; R. Carius; Ch. Buchal

Appl. Phys. Lett. 71, 2824–2826 (1997) https://doi.org/10.1063/1.120147

Abstract

View articletitled, Hot electron impact excitation cross-section of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes

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Avalanche breakdown mechanism originating from Γ–X–Γ transfer in GaAs/AlAs superlattices

M. Hosoda; K. Tominaga; N. Ohtani; K. Kuroyanagi; N. Egami; H. Mimura; K. Kawashima; K. Fujiwara

Appl. Phys. Lett. 71, 2827–2829 (1997) https://doi.org/10.1063/1.120148

Abstract

View articletitled, Avalanche breakdown mechanism originating from Γ–X–Γ transfer in GaAs/AlAs superlattices

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Remote electron beam induced current imaging of electrically active regions in ${YBa}_{2} {Cu}_{3} O_{7−x}$ single crystals

C. Dı́az-Guerra; J. Piqueras

Appl. Phys. Lett. 71, 2830–2832 (1997) https://doi.org/10.1063/1.120419

Abstract

View articletitled, Remote electron beam induced current imaging of electrically active regions in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−x</mtext></mrow></msub></math> single crystals

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Reorientational magnetic transition in mesoscopic cobalt dots

M. Hehn; K. Ounadjela; R. Ferré; W. Grange; F. Rousseaux

Appl. Phys. Lett. 71, 2833–2835 (1997) https://doi.org/10.1063/1.119567

Abstract

View articletitled, Reorientational magnetic transition in mesoscopic cobalt dots

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The structure, magnetostriction, and anisotropy compensation of ${(Tb}_{1−x} \Pr_{x})({Fe}_{0.4} {Co}_{0.6})_{1.9}$ alloys

Z. J. Guo; B. W. Wang; Z. D. Zhang; X. G. Zhao; X. M. Jin; W. Liu; Q. F. Xiao

Appl. Phys. Lett. 71, 2836–2838 (1997) https://doi.org/10.1063/1.120193

Abstract

View articletitled, The structure, magnetostriction, and anisotropy compensation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Tb</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">)(</mi><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">0.6</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>1.9</mtext></mrow></msub></math> alloys

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Current distribution effects in magnetoresistive tunnel junctions

R. J. M. van de Veerdonk; J. Nowak; R. Meservey; J. S. Moodera; W. J. M. de Jonge

Appl. Phys. Lett. 71, 2839–2841 (1997) https://doi.org/10.1063/1.120149

Abstract

View articletitled, Current distribution effects in magnetoresistive tunnel junctions

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Demonstrated low radiative loss of a quadrupole ultrashort electrical pulse propagated on a three strip coplanar transmission line

R. W. McGowan; D. Grischkowsky; J. A. Misewich

Appl. Phys. Lett. 71, 2842–2844 (1997) https://doi.org/10.1063/1.120150

Abstract

View articletitled, Demonstrated low radiative loss of a quadrupole ultrashort electrical pulse propagated on a three strip coplanar transmission line

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Junction properties of aluminum/polypyrrole (polypyrrole derivatives) Schottky diodes

Ramadhar Singh; Amarjeet K. Narula

Appl. Phys. Lett. 71, 2845–2847 (1997) https://doi.org/10.1063/1.120151

Abstract

View articletitled, Junction properties of aluminum/polypyrrole (polypyrrole derivatives) Schottky diodes

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Microwave plasma chemical vapor deposited diamond tips for scanning tunneling microscopy

Sacharia Albin; Jianli Zheng; John B. Cooper; Weihai Fu; Arnel C. Lavarias

Appl. Phys. Lett. 71, 2848–2850 (1997) https://doi.org/10.1063/1.120152

Abstract

View articletitled, Microwave plasma chemical vapor deposited diamond tips for scanning tunneling microscopy

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Rubbing-free, vertically aligned nematic liquid crystal display controlled by in-plane field

S. H. Lee; H. Y. Kim; I. C. Park; B. G. Rho; J. S. Park; H. S. Park; C. H. Lee

Appl. Phys. Lett. 71, 2851–2853 (1997) https://doi.org/10.1063/1.120153

Abstract

View articletitled, Rubbing-free, vertically aligned nematic liquid crystal display controlled by in-plane field

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Photoinduced poling of lead titanate zirconate thin films

A. L. Kholkin; N. Setter

Appl. Phys. Lett. 71, 2854–2856 (1997) https://doi.org/10.1063/1.120154

Abstract

View articletitled, Photoinduced poling of lead titanate zirconate thin films

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Erratum: “Nanoscale metal/self-assembled monolayer/metal heterostructures” [Appl. Phys. Lett. 71, 611 (1997)]

C. Zhou; M. R. Deshpande; M. A. Reed; L. Jones, II; J. M. Tour

Appl. Phys. Lett. 71, 2857 (1997) https://doi.org/10.1063/1.120566

View articletitled, Erratum: “Nanoscale metal/self-assembled monolayer/metal heterostructures” [Appl. Phys. Lett. 71, 611 (1997)]

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