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Volume 70, Issue 8

24 February 1997

All Issues

ISSN 0003-6951

EISSN 1077-3118

A substrate-mode holographic collimating and beam shaping element for laser diodes

Jen-Tsorng Chang; Der-Chin Su; Zhi-Xian Huang; Yang-Tung Huang

Appl. Phys. Lett. 70, 919–921 (1997) https://doi.org/10.1063/1.118441

Abstract

View articletitled, A substrate-mode holographic collimating and beam shaping element for laser diodes

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Nonlinear scanning laser microscopy by third harmonic generation

Y. Barad; H. Eisenberg; M. Horowitz; Y. Silberberg

Appl. Phys. Lett. 70, 922–924 (1997) https://doi.org/10.1063/1.118442

Abstract

View articletitled, Nonlinear scanning laser microscopy by third harmonic generation

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Third-order nonlinear optical properties of chalcogenide glasses

Hirohisa Kanbara; Seiji Fujiwara; Koichiro Tanaka; Hiroyuki Nasu; Kazuyuki Hirao

Appl. Phys. Lett. 70, 925–927 (1997) https://doi.org/10.1063/1.118443

Abstract

View articletitled, Third-order nonlinear optical properties of chalcogenide glasses

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Spectral broadening measurements in poly(phenylene vinylene) polymer channel waveguides

Th. Gabler; R. Waldhäusl; A. Bräuer; F. Michelotti; H.-H. Hörhold; U. Bartuch

Appl. Phys. Lett. 70, 928–930 (1997) https://doi.org/10.1063/1.118462

Abstract

View articletitled, Spectral broadening measurements in poly(phenylene vinylene) polymer channel waveguides

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Mid-infrared ${In}_{1−x} {Al}_{x} Sb/InSb$ heterostructure diode lasers

T. Ashley; C. T. Elliott; R. Jefferies; A. D. Johnson; G. J. Pryce; A. M. White; M. Carroll

Appl. Phys. Lett. 70, 931–933 (1997) https://doi.org/10.1063/1.118444

Abstract

View articletitled, Mid-infrared <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Sb/InSb</mi></math> heterostructure diode lasers

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Planar light-emitting devices fabricated with luminescent electrochemical polyblends

G. Yu; Q. Pei; A. J. Heeger

Appl. Phys. Lett. 70, 934–936 (1997) https://doi.org/10.1063/1.118445

Abstract

View articletitled, Planar light-emitting devices fabricated with luminescent electrochemical polyblends

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Modified substrate spontaneous emission in broad area semiconductor lasers

Malcolm W. Wright; Gregory C. Dente; David J. Bossert; Michael L. Tilton

Appl. Phys. Lett. 70, 937–939 (1997) https://doi.org/10.1063/1.118446

Abstract

View articletitled, Modified substrate spontaneous emission in broad area semiconductor lasers

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Time-resolved observation of thermal oscillations by transmission electron microscopy

N. Osakabe; K. Harada; M. I. Lutwyche; H. Kasai; A. Tonomura

Appl. Phys. Lett. 70, 940–942 (1997) https://doi.org/10.1063/1.118447

Abstract

View articletitled, Time-resolved observation of thermal oscillations by transmission electron microscopy

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The origin of nonlinearity in ${KTiOPO}_{4}$

Dongfeng Xue; Siyuan Zhang

Appl. Phys. Lett. 70, 943–945 (1997) https://doi.org/10.1063/1.118448

Abstract

View articletitled, The origin of nonlinearity in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KTiOPO</mi><mrow><mn>4</mn></mrow></msub></math>

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Threshold sheath potential for the nucleation and growth of cubic boron nitride by inductively coupled plasma enhanced chemical-vapor deposition

Satoshi Amagi; Daisuke Takahashi; Toyonobu Yoshida

Appl. Phys. Lett. 70, 946–948 (1997) https://doi.org/10.1063/1.118449

Abstract

View articletitled, Threshold sheath potential for the nucleation and growth of cubic boron nitride by inductively coupled plasma enhanced chemical-vapor deposition

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${Al}_{x} {Ga}_{1−x} N$ (0⩽ $x ⩽ 1$ ⁠) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

D. Walker; X. Zhang; A. Saxler; P. Kung; J. Xu; M. Razeghi

Appl. Phys. Lett. 70, 949–951 (1997) https://doi.org/10.1063/1.118450

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> (0⩽<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">x</mi><mi mathvariant="bold" xmlns="">⩽</mi><mn xmlns="">1</mn></math>⁠) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

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Misfit grainlets: Point strain sources compensating misfit during epitaxial growth

M. Albrecht; S. Christiansen; H. P. Strunk

Appl. Phys. Lett. 70, 952–954 (1997) https://doi.org/10.1063/1.118451

Abstract

View articletitled, Misfit grainlets: Point strain sources compensating misfit during epitaxial growth

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Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

A. A. Darhuber; V. Holy; J. Stangl; G. Bauer; A. Krost; F. Heinrichsdorff; M. Grundmann; D. Bimberg; V. M. Ustinov; P. S. Kop’ev; A. O. Kosogov; P. Werner

Appl. Phys. Lett. 70, 955–957 (1997) https://doi.org/10.1063/1.118463

Abstract

View articletitled, Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

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Raman spectroscopy investigation of size effects in cubic boron nitride

T. Werninghaus; J. Hahn; F. Richter; D. R. T. Zahn

Appl. Phys. Lett. 70, 958–960 (1997) https://doi.org/10.1063/1.118452

Abstract

View articletitled, Raman spectroscopy investigation of size effects in cubic boron nitride

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Determining the distribution of silicon monofluoride on hydrofluoric acid-treated Si (111) surface by exchange reaction with molecules at the solid/liquid interface

Munehisa Mitsuya

Appl. Phys. Lett. 70, 961–963 (1997) https://doi.org/10.1063/1.118311

Abstract

View articletitled, Determining the distribution of silicon monofluoride on hydrofluoric acid-treated Si (111) surface by exchange reaction with molecules at the solid/liquid interface

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Time-resolved high-resolution electron microscopy of solid state direct bonding of gold and zinc oxide nanocrystallites at ambient temperature

Tokushi Kizuka; Kanji Yamada; Nobuo Tanaka

Appl. Phys. Lett. 70, 964–966 (1997) https://doi.org/10.1063/1.118312

Abstract

View articletitled, Time-resolved high-resolution electron microscopy of solid state direct bonding of gold and zinc oxide nanocrystallites at ambient temperature

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Temperature determination in shocked condensed materials using Raman scattering

G. I. Pangilinan; Y. M. Gupta

Appl. Phys. Lett. 70, 967–969 (1997) https://doi.org/10.1063/1.118477

Abstract

View articletitled, Temperature determination in shocked condensed materials using Raman scattering

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Lateral stiffness of the tip and tip-sample contact in frictional force microscopy

M. A. Lantz; S. J. O’Shea; A. C. F. Hoole; M. E. Welland

Appl. Phys. Lett. 70, 970–972 (1997) https://doi.org/10.1063/1.118476

Abstract

View articletitled, Lateral stiffness of the tip and tip-sample contact in frictional force microscopy

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Novel post-etching treatment of small windows in oxide for selective epitaxial growth

J. W. H. Maes; J. Caro; C. C. G. Visser; T. Zijlstra; E. W. J. M. van der Drift; S. Radelaar; F. D. Tichelaar; E. J. M. Fakkeldij

Appl. Phys. Lett. 70, 973–975 (1997) https://doi.org/10.1063/1.118471

Abstract

View articletitled, Novel post-etching treatment of small windows in oxide for selective epitaxial growth

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Electronic properties of osmium disilicide

A. B. Filonov; D. B. Migas; V. L. Shaposhnikov; N. N. Dorozhkin; V. E. Borisenko; H. Lange

Appl. Phys. Lett. 70, 976–977 (1997) https://doi.org/10.1063/1.118453

Abstract

View articletitled, Electronic properties of osmium disilicide

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Cubo-octahedral $B_{12}$ clusters in silicon crystal

Masakuni Okamoto; Kazunobu Hashimoto; Kunio Takayanagi

Appl. Phys. Lett. 70, 978–980 (1997) https://doi.org/10.1063/1.118454

Abstract

View articletitled, Cubo-octahedral <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>B</mi><mrow><mn>12</mn></mrow></msub></math> clusters in silicon crystal

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Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Yukio Narukawa; Yoichi Kawakami; Mitsuru Funato; Shizuo Fujita; Shigeo Fujita; Shuji Nakamura

Appl. Phys. Lett. 70, 981–983 (1997) https://doi.org/10.1063/1.118455

Abstract

View articletitled, Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

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Surface emission of ${In}_{x} {Ga}_{1−x} N$ epilayers under strong optical excitation

H. X. Jiang; J. Y. Lin; M. Asif Khan; Q. Chen; J. W. Yang

Appl. Phys. Lett. 70, 984–986 (1997) https://doi.org/10.1063/1.118456

Abstract

View articletitled, Surface emission of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> epilayers under strong optical excitation

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Optical gain for wurtzite GaN with anisotropic strain in $c$ plane

K. Domen; K. Horino; A. Kuramata; T. Tanahashi

Appl. Phys. Lett. 70, 987–989 (1997) https://doi.org/10.1063/1.118457

Abstract

View articletitled, Optical gain for wurtzite GaN with anisotropic strain in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">c</mi></math> plane

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Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy

Q. Z. Liu; L. Shen; K. V. Smith; C. W. Tu; E. T. Yu; S. S. Lau; N. R. Perkins; T. F. Kuech

Appl. Phys. Lett. 70, 990–992 (1997) https://doi.org/10.1063/1.118458

Abstract

View articletitled, Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy

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Emission mechanisms and band filling effects in GaAs–AlGaAs V-groove quantum wires

W. R. Tribe; M. J. Steer; D. J. Mowbray; M. S. Skolnick; A. N. Forshaw; J. S. Roberts; G. Hill; M. A. Pate; C. R. Whitehouse; G. M. Williams

Appl. Phys. Lett. 70, 993–995 (1997) https://doi.org/10.1063/1.118459

Abstract

View articletitled, Emission mechanisms and band filling effects in GaAs–AlGaAs V-groove quantum wires

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Quality improvement of low-pressure chemical-vapor-deposited oxide by $N_{2} O$ nitridation

P. T. Lai; Xu Jingping; H. B. Lo; Y. C. Cheng

Appl. Phys. Lett. 70, 996–998 (1997) https://doi.org/10.1063/1.118460

Abstract

View articletitled, Quality improvement of low-pressure chemical-vapor-deposited oxide by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> nitridation

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Loss of electrical conductivity in boron-doped diamond due to ion-induced damage

R. Kalish; C. Uzan-Saguy; B. Philosoph; V. Richter; S. Prawer

Appl. Phys. Lett. 70, 999–1001 (1997) https://doi.org/10.1063/1.118461

Abstract

View articletitled, Loss of electrical conductivity in boron-doped diamond due to ion-induced damage

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Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure

Jan-Shing Su; Wei-Chou Hsu; Yu-Shyan Lin; Wei Lin

Appl. Phys. Lett. 70, 1002–1004 (1997) https://doi.org/10.1063/1.118465

Abstract

View articletitled, Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure

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Fermi energy pinning at the surface during growth of n- and p-type GaAs

C. Y. Chen; R. M. Cohen; D. S. Simons; P. H. Chi

Appl. Phys. Lett. 70, 1005–1007 (1997) https://doi.org/10.1063/1.118474

Abstract

View articletitled, Fermi energy pinning at the surface during growth of n- and p-type GaAs

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Novel cost-effective bifacial silicon solar cells with 19.4% front and 18.1% rear efficiency

Andreas Hübner; Armin G. Aberle; Rudolf Hezel

Appl. Phys. Lett. 70, 1008–1010 (1997) https://doi.org/10.1063/1.118466

Abstract

View articletitled, Novel cost-effective bifacial silicon solar cells with 19.4% front and 18.1% rear efficiency

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Temperature dependent electron beam induced current experiments on chalcopyrite thin film solar cells

R. Scheer; M. Wilhelm; L. Stolt

Appl. Phys. Lett. 70, 1011–1013 (1997) https://doi.org/10.1063/1.118467

Abstract

View articletitled, Temperature dependent electron beam induced current experiments on chalcopyrite thin film solar cells

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Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC

C. Peppermüller; R. Helbig; K. Rottner; A. Schöner

Appl. Phys. Lett. 70, 1014–1016 (1997) https://doi.org/10.1063/1.118468

Abstract

View articletitled, Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC

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High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

Andrés Cuevas; Matthew Stocks; Stephane Armand; Michael Stuckings; Andrew Blakers; Francesca Ferrazza

Appl. Phys. Lett. 70, 1017–1019 (1997) https://doi.org/10.1063/1.118469

Abstract

View articletitled, High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

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Evidence of strain and lattice distortion in lead sulfide nanocrystallites

S. B. Qadri; J. P. Yang; E. F. Skelton; B. R. Ratna

Appl. Phys. Lett. 70, 1020–1021 (1997) https://doi.org/10.1063/1.118470

Abstract

View articletitled, Evidence of strain and lattice distortion in lead sulfide nanocrystallites

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Preparation and termination of well-defined CdTe(100) and Cd(Zn)Te(100) surfaces

C. Heske; U. Winkler; H. Neureiter; M. Sokolowski; R. Fink; E. Umbach; Ch. Jung; P. R. Bressler

Appl. Phys. Lett. 70, 1022–1024 (1997) https://doi.org/10.1063/1.118432

Abstract

View articletitled, Preparation and termination of well-defined CdTe(100) and Cd(Zn)Te(100) surfaces

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Arsenic mediated reconstructions on cubic (001) GaN

G. Feuillet; H. Hamaguchi; K. Ohta; P. Hacke; H. Okumura; S. Yoshida

Appl. Phys. Lett. 70, 1025–1027 (1997) https://doi.org/10.1063/1.118433

Abstract

View articletitled, Arsenic mediated reconstructions on cubic (001) GaN

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Fabrication of $n$ -type nickel doped $B_{5} C_{1+δ}$ homojunction and heterojunction diodes

Seong-Don Hwang; Ken Yang; P. A. Dowben; Ahmad A. Ahmad; N. J. Ianno; J. Z. Li; J. Y. Lin; H. X. Jiang; D. N. McIlroy

Appl. Phys. Lett. 70, 1028–1030 (1997) https://doi.org/10.1063/1.118434

Abstract

View articletitled, Fabrication of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type nickel doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>B</mtext><mn>5</mn></msub></mrow><mrow xmlns=""><msub><mtext>C</mtext><mn>1+δ</mn></msub></mrow></math> homojunction and heterojunction diodes

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Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction

K. Paschke; T. Geue; T. A. Barberka; A. Bolm; U. Pietsch; M. Rösch; E. Batke; F. Faller; K. Kerkel; J. Oshinowo; A. Forchel

Appl. Phys. Lett. 70, 1031–1033 (1997) https://doi.org/10.1063/1.118473

Abstract

View articletitled, Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction

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On the role of pre-existing, unhealed cracks on the bending strain response of Ag-clad $({Bi,Pb)}_{2} {Sr}_{2} {Ca}_{2} {Cu}_{3} O_{x}$ tapes

M. Polak; J. A. Parrell; A. A. Polyanskii; A. E. Pashitski; D. C. Larbalestier

Appl. Phys. Lett. 70, 1034–1036 (1997) https://doi.org/10.1063/1.118435

Abstract

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Nuclear magnetic resonance using a high temperature superconducting quantum interference device

S. Kumar; R. Matthews; S. G. Haupt; D. K. Lathrop; M. Takigawa; J. R. Rozen; S. L. Brown; R. H. Koch

Appl. Phys. Lett. 70, 1037–1039 (1997) https://doi.org/10.1063/1.118436

Abstract

View articletitled, Nuclear magnetic resonance using a high temperature superconducting quantum interference device

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Photoinduced magnetic pole inversion in a ferro–ferrimagnet: $({Fe}_{0.40}^{II} {Mn}_{0.60}^{II})_{1.5} {Cr}^{III} {(CN)}_{6}$

Shin-ichi Ohkoshi; Shinsuke Yorozu; Osamu Sato; Tomokazu Iyoda; Akira Fujishima; Kazuhito Hashimoto

Appl. Phys. Lett. 70, 1040–1042 (1997) https://doi.org/10.1063/1.118475

Abstract

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Self-organized Fe nanowire arrays prepared by shadow deposition on NaCl(110) templates

Akira Sugawara; T. Coyle; G. G. Hembree; M. R. Scheinfein

Appl. Phys. Lett. 70, 1043–1045 (1997) https://doi.org/10.1063/1.118437

Abstract

View articletitled, Self-organized Fe nanowire arrays prepared by shadow deposition on NaCl(110) templates

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Magnetoresistance behavior of submicron ${Ni}_{80} {Fe}_{20}$ wires

A. O. Adeyeye; G. Lauhoff; J. A. C. Bland; C. Daboo; D. G. Hasko; H. Ahmed

Appl. Phys. Lett. 70, 1046–1048 (1997) https://doi.org/10.1063/1.118438

Abstract

View articletitled, Magnetoresistance behavior of submicron <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>80</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">20</mi></mrow></msub></math> wires

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Experimental test of models of radio-frequency plasma sheaths

M. A. Sobolewski

Appl. Phys. Lett. 70, 1049–1051 (1997) https://doi.org/10.1063/1.118464

Abstract

View articletitled, Experimental test of models of radio-frequency plasma sheaths

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${CH}_{3}$ detection in a low-density supersonic arcjet plasma during diamond synthesis

Michael H. Loh; Mark A. Cappelli

Appl. Phys. Lett. 70, 1052–1054 (1997) https://doi.org/10.1063/1.118439

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mn>3</mn></mrow></msub></math> detection in a low-density supersonic arcjet plasma during diamond synthesis

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Comment on “Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect” [Appl. Phys. Lett. 67, 392 (1995)]

C. Özkul

Appl. Phys. Lett. 70, 1055–1056 (1997) https://doi.org/10.1063/1.118440

Abstract

View articletitled, Comment on “Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect” [Appl. Phys. Lett. 67, 392 (1995)]

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Response to “Comment on ‘Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect’ ’’ [Appl. Phys. Lett. 70, 1055 (1997)]

G. Wittmann; A. Winnacker

Appl. Phys. Lett. 70, 1057 (1997) https://doi.org/10.1063/1.118472

View articletitled, Response to “Comment on ‘Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect’ ’’ [Appl. Phys. Lett. 70, 1055 (1997)]

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Erratum: “An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications” [Appl. Phys. Lett. 69, 4011 (1996)]

Jia-lin Chen; Hong-ming Chen; Joseph Ya-min Lee

Appl. Phys. Lett. 70, 1058 (1997) https://doi.org/10.1063/1.119268

View articletitled, Erratum: “An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead–zirconate–titanate thin film capacitors for memory device applications” [Appl. Phys. Lett. 69, 4011 (1996)]

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