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Volume 70, Issue 26

30 June 1997

All Issues

ISSN 0003-6951

EISSN 1077-3118

Detecting squeezed phonons through an indirect radiative transition

Ö. E. Müstecaplıoǧlu; A. S. Shumovsky

Appl. Phys. Lett. 70, 3489–3491 (1997) https://doi.org/10.1063/1.119209

Abstract

View articletitled, Detecting squeezed phonons through an indirect radiative transition

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Growth and ultraviolet application of ${Li}_{2} B_{4} O_{7}$ crystals: Generation of the fourth and fifth harmonics of ${Nd:Y}_{3} {Al}_{5} O_{12}$ lasers

R. Komatsu; T. Sugawara; K. Sassa; N. Sarukura; Z. Liu; S. Izumida; Y. Segawa; S. Uda; T. Fukuda; K. Yamanouchi

Appl. Phys. Lett. 70, 3492–3494 (1997) https://doi.org/10.1063/1.119210

Abstract

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Strong pyroelectric response in semiconducting Y-Ba-Cu-O and its application to uncooled infrared detection

A. Jahanzeb; C. M. Travers; D. P. Butler; Z. Çelik-Butler; J. E. Gray

Appl. Phys. Lett. 70, 3495–3497 (1997) https://doi.org/10.1063/1.119211

Abstract

View articletitled, Strong pyroelectric response in semiconducting Y-Ba-Cu-O and its application to uncooled infrared detection

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Ultrafast all-optical gate switch based on frequency shift accompanied by semiconductor band-filling effect

Shigeru Nakamura; Kazuhito Tajima

Appl. Phys. Lett. 70, 3498–3500 (1997) https://doi.org/10.1063/1.119212

Abstract

View articletitled, Ultrafast all-optical gate switch based on frequency shift accompanied by semiconductor band-filling effect

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Active mode locking with a hybrid neodymium laser

Li Yan; Bo Guo

Appl. Phys. Lett. 70, 3501–3503 (1997) https://doi.org/10.1063/1.119213

Abstract

View articletitled, Active mode locking with a hybrid neodymium laser

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Reduction of light-scattering loss in silica glass by the structural relaxation of “frozen-in” density fluctuations

K. Saito; A. J. Ikushima

Appl. Phys. Lett. 70, 3504–3506 (1997) https://doi.org/10.1063/1.119214

Abstract

View articletitled, Reduction of light-scattering loss in silica glass by the structural relaxation of “frozen-in” density fluctuations

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Interference scanning optical probe microscopy

W. S. Bacsa; A. Kulik

Appl. Phys. Lett. 70, 3507–3509 (1997) https://doi.org/10.1063/1.119215

Abstract

View articletitled, Interference scanning optical probe microscopy

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Dynamic polariscopic imaging of laser-induced strain in a tissue phantom

G. Delacrétaz; J. T. Walsh, Jr.; T. Asshauer

Appl. Phys. Lett. 70, 3510–3512 (1997) https://doi.org/10.1063/1.119216

Abstract

View articletitled, Dynamic polariscopic imaging of laser-induced strain in a tissue phantom

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Ordering temperatures in Cu–Al–Ni shape memory alloys

V. Recarte; O. A. Lambri; R. B. Pérez-Sáez; M. L. Nó; J. San Juan

Appl. Phys. Lett. 70, 3513–3515 (1997) https://doi.org/10.1063/1.119217

Abstract

View articletitled, Ordering temperatures in Cu–Al–Ni shape memory alloys

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Highly textured and conductive undoped ZnO film using hydrogen post-treatment

Seung Jae Baik; Jae Hoon Jang; Chang Hyun Lee; Woo Yeong Cho; Koeng Su Lim

Appl. Phys. Lett. 70, 3516–3518 (1997) https://doi.org/10.1063/1.119218

Abstract

View articletitled, Highly textured and conductive undoped ZnO film using hydrogen post-treatment

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A lower bound on implant density to induce wafer splitting in forming compliant substrate structures

L. B. Freund

Appl. Phys. Lett. 70, 3519–3521 (1997) https://doi.org/10.1063/1.119219

Abstract

View articletitled, A lower bound on implant density to induce wafer splitting in forming compliant substrate structures

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Oxygen surface diffusion in three-dimensional ${Cu}_{2} O$ growth on Cu(001) thin films

J. C. Yang; M. Yeadon; B. Kolasa; J. M. Gibson

Appl. Phys. Lett. 70, 3522–3524 (1997) https://doi.org/10.1063/1.119220

Abstract

View articletitled, Oxygen surface diffusion in three-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> growth on Cu(001) thin films

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The dissolution behavior of the void defects by hydrogen annealing in Czochralski grown silicon crystals

K. Nakamura; T. Saishoji; J. Tomioka

Appl. Phys. Lett. 70, 3525–3527 (1997) https://doi.org/10.1063/1.119221

Abstract

View articletitled, The dissolution behavior of the void defects by hydrogen annealing in Czochralski grown silicon crystals

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Threshold behavior in synchrotron-radiation-stimulated recrystallization during Si homoepitaxy on Si(100)

Housei Akazawa

Appl. Phys. Lett. 70, 3528–3530 (1997) https://doi.org/10.1063/1.119222

Abstract

View articletitled, Threshold behavior in synchrotron-radiation-stimulated recrystallization during Si homoepitaxy on Si(100)

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Density and structural changes in SiC after amorphization and annealing

V. Heera; F. Prokert; N. Schell; H. Seifarth; W. Fukarek; M. Voelskow; W. Skorupa

Appl. Phys. Lett. 70, 3531–3533 (1997) https://doi.org/10.1063/1.119223

Abstract

View articletitled, Density and structural changes in SiC after amorphization and annealing

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Theoretical investigation on δ doping of Se atoms in GaAs

Jun Nara; Taizo Sasaki; Takahisa Ohno

Appl. Phys. Lett. 70, 3534–3536 (1997) https://doi.org/10.1063/1.119224

Abstract

View articletitled, Theoretical investigation on δ doping of Se atoms in GaAs

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Effect of irradiant wavelength during porous silicon formation

Crona Malone; Jacob Jorne

Appl. Phys. Lett. 70, 3537–3539 (1997) https://doi.org/10.1063/1.119225

Abstract

View articletitled, Effect of irradiant wavelength during porous silicon formation

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Optical absorption edge of semi-insulating GaAs and InP at high temperatures

M. Beaudoin; A. J. G. DeVries; S. R. Johnson; H. Laman; T. Tiedje

Appl. Phys. Lett. 70, 3540–3542 (1997) https://doi.org/10.1063/1.119226

Abstract

View articletitled, Optical absorption edge of semi-insulating GaAs and InP at high temperatures

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Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

J. Černe; J. Kono; T. Inoshita; M. Sherwin; M. Sundaram; A. C. Gossard

Appl. Phys. Lett. 70, 3543–3545 (1997) https://doi.org/10.1063/1.119227

Abstract

View articletitled, Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

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Sequential tunneling current through semiconductor superlattices under intense THz radiation

Gloria Platero; Ramón Aguado

Appl. Phys. Lett. 70, 3546–3548 (1997) https://doi.org/10.1063/1.119228

Abstract

View articletitled, Sequential tunneling current through semiconductor superlattices under intense THz radiation

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Influence of growth conditions on electrical characteristics of AlN on SiC

C.-M. Zetterling; M. Östling; N. Nordell; O. Schön; M. Deschler

Appl. Phys. Lett. 70, 3549–3551 (1997) https://doi.org/10.1063/1.119229

Abstract

View articletitled, Influence of growth conditions on electrical characteristics of AlN on SiC

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New ripple patterns observed in excimer-laser irradiated ${SiO}_{2} {/polycrystalline silicon/SiO}_{2}$ structures

G. K. Giust; T. W. Sigmon

Appl. Phys. Lett. 70, 3552–3554 (1997) https://doi.org/10.1063/1.119230

Abstract

View articletitled, New ripple patterns observed in excimer-laser irradiated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/polycrystalline silicon/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> structures

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Near-field scanning optical microscopy studies of ${Cu(In,Ga)Se}_{2}$ solar cells

A. A. McDaniel; J. W. P. Hsu; A. M. Gabor

Appl. Phys. Lett. 70, 3555–3557 (1997) https://doi.org/10.1063/1.119231

Abstract

View articletitled, Near-field scanning optical microscopy studies of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu(In,Ga)Se</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> solar cells

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Band gaps of GaPN and GaAsN alloys

L. Bellaiche; S.-H. Wei; Alex Zunger

Appl. Phys. Lett. 70, 3558–3560 (1997) https://doi.org/10.1063/1.119232

Abstract

View articletitled, Band gaps of GaPN and GaAsN alloys

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Synthesis and control of conductivity of ultraviolet transmitting $β- {Ga}_{2} O_{3}$ single crystals

Naoyuki Ueda; Hideo Hosono; Ryuta Waseda; Hiroshi Kawazoe

Appl. Phys. Lett. 70, 3561–3563 (1997) https://doi.org/10.1063/1.119233

Abstract

View articletitled, Synthesis and control of conductivity of ultraviolet transmitting <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> single crystals

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Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates

V. Bousquet; E. Tournié; M. Laügt; P. Vennéguès; J. P. Faurie

Appl. Phys. Lett. 70, 3564–3566 (1997) https://doi.org/10.1063/1.119234

Abstract

View articletitled, Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates

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Impact ionization coefficients in GaInP p–i–n diodes

R. Ghin; J. P. R. David; M. Hopkinson; M. A. Pate; G. J. Rees; P. N. Robson

Appl. Phys. Lett. 70, 3567–3569 (1997) https://doi.org/10.1063/1.119235

Abstract

View articletitled, Impact ionization coefficients in GaInP p–i–n diodes

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Laser crystallization and structuring of amorphous germanium

M. Mulato; D. Toet; G. Aichmayr; P. V. Santos; I. Chambouleyron

Appl. Phys. Lett. 70, 3570–3572 (1997) https://doi.org/10.1063/1.119236

Abstract

View articletitled, Laser crystallization and structuring of amorphous germanium

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Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing

D. K. Sengupta; T. Horton; W. Fang; A. Curtis; J. Li; S. L. Chuang; H. Chen; M. Feng; G. E. Stillman; A. Kar; J. Mazumder; L. Li; H. C. Liu

Appl. Phys. Lett. 70, 3573–3575 (1997) https://doi.org/10.1063/1.119237

Abstract

View articletitled, Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing

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Transient ion drift detection of low level copper contamination in silicon

T. Heiser; S. McHugo; H. Hieslmair; E. R. Weber

Appl. Phys. Lett. 70, 3576–3578 (1997) https://doi.org/10.1063/1.119238

Abstract

View articletitled, Transient ion drift detection of low level copper contamination in silicon

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Spontaneous lateral alignment of ${In}_{0.25} {Ga}_{0.75} As$ self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy

Kenichi Nishi; Takayoshi Anan; Akiko Gomyo; Shigeru Kohmoto; Shigeo Sugou

Appl. Phys. Lett. 70, 3579–3581 (1997) https://doi.org/10.1063/1.119239

Abstract

View articletitled, Spontaneous lateral alignment of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.25</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.75</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy

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Subband electron densities of Si δ-doped pseudomorphic ${In}_{0.2} {Ga}_{0.8} As/GaAs$ heterostructures

G. Li; A. Babinski; C. Jagadish

Appl. Phys. Lett. 70, 3582–3584 (1997) https://doi.org/10.1063/1.119240

Abstract

View articletitled, Subband electron densities of Si δ-doped pseudomorphic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> heterostructures

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Evaluation of the CdS/CdTe interface using free-electron laser internal photoemission technique

Kazuhisa Nishi; Hideaki Ohyama; Toshiji Suzuki; Tsuneo Mitsuyu; Takio Tomimasu

Appl. Phys. Lett. 70, 3585–3587 (1997) https://doi.org/10.1063/1.119241

Abstract

View articletitled, Evaluation of the CdS/CdTe interface using free-electron laser internal photoemission technique

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Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

J. Walachová; J. Zelinka; J. Vaniš; D. H. Chow; J. N. Schulman; S. Karamazov; M. Cukr; P. Zich; J. Král; T. C. McGill

Appl. Phys. Lett. 70, 3588–3590 (1997) https://doi.org/10.1063/1.119274

Abstract

View articletitled, Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

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Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm

C. De Matos; A. Le Corre; H. L’Haridon; S. Gosselin; B. Lambert

Appl. Phys. Lett. 70, 3591–3593 (1997) https://doi.org/10.1063/1.119242

Abstract

View articletitled, Fe-doped InGaAs/InGaAsP photorefractive multiple quantum well devices operating at 1.55 μm

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Thermally stimulated luminescence from x-irradiated porous silicon

D. W. Cooke; B. L. Bennett; E. H. Farnum; W. L. Hults; R. E. Muenchausen; J. L. Smith

Appl. Phys. Lett. 70, 3594–3596 (1997) https://doi.org/10.1063/1.119243

Abstract

View articletitled, Thermally stimulated luminescence from x-irradiated porous silicon

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Photoluminescence study of implantation dose and dose-rate dependence of Si doping of GaAs

M. Kotani; M. Zafar Iqbal; Y. Makita; R. Morton; S. S. Lau

Appl. Phys. Lett. 70, 3597–3599 (1997) https://doi.org/10.1063/1.119244

Abstract

View articletitled, Photoluminescence study of implantation dose and dose-rate dependence of Si doping of GaAs

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Carbon doping and etching of ${Al}_{x} {Ga}_{1−x} As$ $(0⩽x⩽1)$ with carbon tetrachloride in metalorganic vapor phase epitaxy

H. Q. Hou

Appl. Phys. Lett. 70, 3600–3602 (1997) https://doi.org/10.1063/1.119245

Abstract

View articletitled, Carbon doping and etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0⩽x⩽1)</mtext></math> with carbon tetrachloride in metalorganic vapor phase epitaxy

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Overdamped Josephson junctions with ${Nb/AlO}_{x} / {Al/AlO}_{x} / Nb$ structure for integrated circuit application

Masaaki Maezawa; Akira Shoji

Appl. Phys. Lett. 70, 3603–3605 (1997) https://doi.org/10.1063/1.119246

Abstract

View articletitled, Overdamped Josephson junctions with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nb/AlO</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Al/AlO</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Nb</mi></math> structure for integrated circuit application

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Domain-orientation dependence of levitation force in seeded melt grown single-domain ${YBa}_{2} {Cu}_{3} O_{x}$

Donglu Shi; D. Qu; S. Sagar; K. Lahiri

Appl. Phys. Lett. 70, 3606–3608 (1997) https://doi.org/10.1063/1.119247

Abstract

View articletitled, Domain-orientation dependence of levitation force in seeded melt grown single-domain <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>x</mi></mrow></msub></math>

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Critical change of magnetoresistance with bandwidth and doping in perovskite manganites

Y. Tomioka; H. Kuwahara; A. Asamitsu; M. Kasai; Y. Tokura

Appl. Phys. Lett. 70, 3609–3611 (1997) https://doi.org/10.1063/1.119248

Abstract

View articletitled, Critical change of magnetoresistance with bandwidth and doping in perovskite manganites

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Quantitative analysis of magnetization reversal based on time-dependent domain patterns

Sug-Bong Choe; Sung-Chul Shin

Appl. Phys. Lett. 70, 3612–3614 (1997) https://doi.org/10.1063/1.119249

Abstract

View articletitled, Quantitative analysis of magnetization reversal based on time-dependent domain patterns

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Reduction mechanism of surface oxide in aluminum alloy powders containing magnesium studied by x-ray photoelectron spectroscopy using synchrotron radiation

Atsushi Kimura; Masahiro Shibata; Katsuyoshi Kondoh; Yoshinobu Takeda; Makoto Katayama; Tomohiko Kanie; Hiroshi Takada

Appl. Phys. Lett. 70, 3615–3617 (1997) https://doi.org/10.1063/1.119250

Abstract

View articletitled, Reduction mechanism of surface oxide in aluminum alloy powders containing magnesium studied by x-ray photoelectron spectroscopy using synchrotron radiation

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Comment on “Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes” [Appl. Phys. Lett. 69, 1975 (1996)]

Andrew N. Farley

Appl. Phys. Lett. 70, 3618 (1997) https://doi.org/10.1063/1.119251

View articletitled, Comment on “Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes” [Appl. Phys. Lett. 69, 1975 (1996)]

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Response to “Comment on ‘Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes’ ” [Appl. Phys. Lett. 70, 3618 (1996)]

F. Houzé; R. Meyer; O. Schneegans; L. Boyer

Appl. Phys. Lett. 70, 3619 (1997) https://doi.org/10.1063/1.119257

View articletitled, Response to “Comment on ‘Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes’ ” [Appl. Phys. Lett. 70, 3618 (1996)]

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