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Midinfrared molecular gas lasers optically pumped by a continuously tunable infrared optical parametric oscillator
Appl. Phys. Lett. 70, 2215–2217 (1997)
https://doi.org/10.1063/1.118818
Widely tunable efficient intracavity quasiphase-matched midinfrared generation
Appl. Phys. Lett. 70, 2218–2220 (1997)
https://doi.org/10.1063/1.118820
The consistent application of Maxwell–Garnett effective medium theory to anisotropic composites
Appl. Phys. Lett. 70, 2221–2223 (1997)
https://doi.org/10.1063/1.118821
Transverse-electric/transverse-magnetic polarization converter using twisted optic–axis waveguides in poled polymers
Appl. Phys. Lett. 70, 2227–2229 (1997)
https://doi.org/10.1063/1.118823
Optically pumped lasing of ZnO at room temperature
In Special Collection:
APL Classic Papers
Appl. Phys. Lett. 70, 2230–2232 (1997)
https://doi.org/10.1063/1.118824
Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium
Appl. Phys. Lett. 70, 2233–2235 (1997)
https://doi.org/10.1063/1.118849
Tip-surface interactions studied using a force controlled atomic force microscope in ultrahigh vacuum
Appl. Phys. Lett. 70, 2238–2240 (1997)
https://doi.org/10.1063/1.118826
Ferroelectric domain gratings and Barkhausen spikes in potassium lithium tantalate niobate
Appl. Phys. Lett. 70, 2241–2243 (1997)
https://doi.org/10.1063/1.118827
Gas-condensation synthesis of nanocrystalline
Appl. Phys. Lett. 70, 2244–2246 (1997)
https://doi.org/10.1063/1.118828
On the dynamics of the oxidation-induced stacking-fault ring in as-grown Czochralski silicon crystals
Appl. Phys. Lett. 70, 2250–2252 (1997)
https://doi.org/10.1063/1.118829
Spin-on doping of porous silicon and its effect on photoluminescence and transport characteristics
Appl. Phys. Lett. 70, 2253–2255 (1997)
https://doi.org/10.1063/1.118830
Fabrication of ZnSe quantum dots under Volmer–Weber mode by metalorganic chemical vapor deposition
Appl. Phys. Lett. 70, 2256–2258 (1997)
https://doi.org/10.1063/1.118831
Improvement in quality of epitaxial layers grown on (001) InP substrates by using an InP buffer layer
Appl. Phys. Lett. 70, 2259–2261 (1997)
https://doi.org/10.1063/1.118832
Local identification and mapping of the C49 and C54 titanium phases in submicron structures by micro-Raman spectroscopy
Appl. Phys. Lett. 70, 2262–2264 (1997)
https://doi.org/10.1063/1.118833
The pseudo-ordered structure in light emitting porous and nanocrystalline silicon films
Appl. Phys. Lett. 70, 2265–2267 (1997)
https://doi.org/10.1063/1.118834
Synthesis of GaN nanocrystals by sequential ion implantation
Appl. Phys. Lett. 70, 2268–2270 (1997)
https://doi.org/10.1063/1.118850
Differential reflectance spectroscopy of GaAlAs thin films and GaAs bulk under externally applied temperature gradient
Appl. Phys. Lett. 70, 2271–2273 (1997)
https://doi.org/10.1063/1.118835
Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy
Appl. Phys. Lett. 70, 2274–2276 (1997)
https://doi.org/10.1063/1.118836
Schottky barrier detectors on GaN for visible–blind ultraviolet detection
Q. Chen; J. W. Yang; A. Osinsky; S. Gangopadhyay; B. Lim; M. Z. Anwar; M. Asif Khan; D. Kuksenkov; H. Temkin
Appl. Phys. Lett. 70, 2277–2279 (1997)
https://doi.org/10.1063/1.118837
Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC
Appl. Phys. Lett. 70, 2280–2281 (1997)
https://doi.org/10.1063/1.119262
Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
Appl. Phys. Lett. 70, 2282–2284 (1997)
https://doi.org/10.1063/1.118838
B diffusion and clustering in ion implanted Si: The role of B cluster precursors
Appl. Phys. Lett. 70, 2285–2287 (1997)
https://doi.org/10.1063/1.118839
In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature
Appl. Phys. Lett. 70, 2288–2290 (1997)
https://doi.org/10.1063/1.119083
Resonant tunneling through a self-assembled Si quantum dot
Appl. Phys. Lett. 70, 2291–2293 (1997)
https://doi.org/10.1063/1.118816
Electron transport properties through InAs self-assembled quantum dots in modulation doped structures
Appl. Phys. Lett. 70, 2294–2296 (1997)
https://doi.org/10.1063/1.118840
Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage
Appl. Phys. Lett. 70, 2297–2299 (1997)
https://doi.org/10.1063/1.118841
Field-sweep rate dependence of magnetization and current–voltage characteristics in superconducting disks
Appl. Phys. Lett. 70, 2300–2302 (1997)
https://doi.org/10.1063/1.118842
Magnetoresistance in thin films and bulks of layered-perovskite
Appl. Phys. Lett. 70, 2303–2305 (1997)
https://doi.org/10.1063/1.118843
Magnetic domain formation in lithographically defined antidot Permalloy arrays
Appl. Phys. Lett. 70, 2309–2311 (1997)
https://doi.org/10.1063/1.118845
Characteristic improvement of tungsten photocathode by two-wavelength irradiation of the Nd:YAG laser
Koichi Ohkubo; Naoya Nakao; Kunioki Mima; Sadao Nakai; Masayuki Fujita; Kazuo Imasaki; Chiyoe Yamanaka; Takeshi Watanabe; Takayuki Ishida; Nobuhisa Ohigashi; Yoshiaki Tsunawaki
Appl. Phys. Lett. 70, 2312–2314 (1997)
https://doi.org/10.1063/1.118846
Alternative approach to electroless Cu metallization of AlN by a nonaqueous polyol process
Appl. Phys. Lett. 70, 2315–2317 (1997)
https://doi.org/10.1063/1.118847
Self-sharpening tip integrated on micro cantilevers with self-exciting piezoelectric sensor for parallel atomic force microscopy
Appl. Phys. Lett. 70, 2318–2320 (1997)
https://doi.org/10.1063/1.118817
A possible nanometer-scale computing device based on an adding cellular automaton
Appl. Phys. Lett. 70, 2321–2323 (1997)
https://doi.org/10.1063/1.118851
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.