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Photoluminescence microscopy of InGaN quantum wells
Appl. Phys. Lett. 70, 1333–1335 (1997)
https://doi.org/10.1063/1.118600
Luminescent observation of multiphoton ionization-fragmentation of chromate ions adsorbed on a disperse surface
Appl. Phys. Lett. 70, 1336–1338 (1997)
https://doi.org/10.1063/1.118572
Photorefractive grating fixing in by ferroelectric domains
Appl. Phys. Lett. 70, 1339–1341 (1997)
https://doi.org/10.1063/1.118573
Double-end crosslinked electro-optic polymer modulators with high optical power handling capability
Appl. Phys. Lett. 70, 1342–1344 (1997)
https://doi.org/10.1063/1.118574
Room temperature infrared intersubband photoluminescence in GaAs quantum wells
Appl. Phys. Lett. 70, 1345–1347 (1997)
https://doi.org/10.1063/1.118601
Photo-pumped ZnCdSe/ZnCdMgSe blue-green quantum well lasers grown on InP substrates
Appl. Phys. Lett. 70, 1351–1353 (1997)
https://doi.org/10.1063/1.118576
Optical antenna: Towards a unity efficiency near-field optical probe
Appl. Phys. Lett. 70, 1354–1356 (1997)
https://doi.org/10.1063/1.118577
Analog circuits simulation of communication with chaotic lasers
Appl. Phys. Lett. 70, 1357–1359 (1997)
https://doi.org/10.1063/1.118578
Spatial soliton robustness against spatially anisotropic phase perturbations
Appl. Phys. Lett. 70, 1363–1365 (1997)
https://doi.org/10.1063/1.118580
Femtosecond continuously tunable second harmonic generation over the entire-visible range in orthorhombic acentric crystals
H. Nishioka; W. Odajima; M. Tateno; K. Ueda; A. A. Kaminskii; A. V. Butashin; S. N. Bagayev; A. A. Pavlyuk
Appl. Phys. Lett. 70, 1366–1368 (1997)
https://doi.org/10.1063/1.118581
An enhancement of pump efficiency of a Ti:sapphire tube laser with an inner spectrum converter
Appl. Phys. Lett. 70, 1369–1371 (1997)
https://doi.org/10.1063/1.118571
High resolution visualization of acoustic wave fields within surface acoustic wave devices
Appl. Phys. Lett. 70, 1372–1374 (1997)
https://doi.org/10.1063/1.119323
Vacuum ultraviolet absorption spectroscopy for absolute density measurements of fluorine atoms in fluorocarbon plasmas
Appl. Phys. Lett. 70, 1375–1377 (1997)
https://doi.org/10.1063/1.118582
Piezoelectric properties of -axis oriented thin films
Appl. Phys. Lett. 70, 1378–1380 (1997)
https://doi.org/10.1063/1.118583
Deposition of n-type diamondlike carbon by using the layer-by-layer technique and its electron emission properties
Appl. Phys. Lett. 70, 1381–1383 (1997)
https://doi.org/10.1063/1.119076
Effect of applied electric field on the molecular orientation of epitaxially grown organic films
Appl. Phys. Lett. 70, 1384–1386 (1997)
https://doi.org/10.1063/1.118584
On the presence of molecular nitrogen in nitrogen-implanted amorphous carbon
Appl. Phys. Lett. 70, 1387–1389 (1997)
https://doi.org/10.1063/1.118585
Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
Appl. Phys. Lett. 70, 1390–1392 (1997)
https://doi.org/10.1063/1.118586
Highly oriented ferroelectric thin films deposited on Si(100) by pulsed laser deposition
Appl. Phys. Lett. 70, 1393–1395 (1997)
https://doi.org/10.1063/1.118587
Improvement of the dielectric properties of through substitution with
R. J. Cava; W. F. Peck, Jr.; J. J. Krajewski; G. L. Roberts; B. P. Barber; H. M. O’Bryan; P. L. Gammel
Appl. Phys. Lett. 70, 1396–1398 (1997)
https://doi.org/10.1063/1.119088
Electrical properties and microstructures of capacitors
Appl. Phys. Lett. 70, 1405–1407 (1997)
https://doi.org/10.1063/1.118590
Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy
Appl. Phys. Lett. 70, 1411–1413 (1997)
https://doi.org/10.1063/1.118569
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
Shuji Nakamura; Masayuki Senoh; Shin-ichi Nagahama; Naruhito Iwasa; Takao Yamada; Toshio Matsushita; Yasunobu Sugimoto; Hiroyuki Kiyoku
Appl. Phys. Lett. 70, 1417–1419 (1997)
https://doi.org/10.1063/1.118593
As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy
Appl. Phys. Lett. 70, 1423–1425 (1997)
https://doi.org/10.1063/1.118595
Very low density two-dimensional hole gas in an inverted GaAs/AlAs interface
Appl. Phys. Lett. 70, 1426–1428 (1997)
https://doi.org/10.1063/1.118596
Single-level interface states in semiconductor structures investigated by admittance spectroscopy
Appl. Phys. Lett. 70, 1432–1434 (1997)
https://doi.org/10.1063/1.118598
Submicron processing of InAs based quantum wells: A new, highly selective wet etchant for AlSb
Appl. Phys. Lett. 70, 1435–1437 (1997)
https://doi.org/10.1063/1.118599
Hole effective masses in relaxed and alloys
Appl. Phys. Lett. 70, 1441–1443 (1997)
https://doi.org/10.1063/1.118558
Mg-doped green light emitting diodes over cubic (111) substrates
C. J. Sun; J. W. Yang; B. W. Lim; Q. Chen; M. Zubair Anwar; M. Asif Khan; A. Osinsky; H. Temkin; J. F. Schetzina
Appl. Phys. Lett. 70, 1444–1446 (1997)
https://doi.org/10.1063/1.118557
Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure
Appl. Phys. Lett. 70, 1447–1449 (1997)
https://doi.org/10.1063/1.118559
Microphotoluminescence of single disks comprising buried quantum wells fabricated by in situ electron-beam lithography
Appl. Phys. Lett. 70, 1450–1452 (1997)
https://doi.org/10.1063/1.119077
ZnSe nitrogen doping using an ion-free electron-cyclotron-resonance plasma beam
Appl. Phys. Lett. 70, 1453–1455 (1997)
https://doi.org/10.1063/1.118644
Study of composition and critical-point broadening in Sb superlattices using spectroscopic ellipsometry
Appl. Phys. Lett. 70, 1456–1458 (1997)
https://doi.org/10.1063/1.118560
Polarization anisotropy in the electroabsorption of ordered GaInP
Appl. Phys. Lett. 70, 1459–1461 (1997)
https://doi.org/10.1063/1.118561
Dramatic effect of postoxidation annealing on (100) roughness
Appl. Phys. Lett. 70, 1462–1464 (1997)
https://doi.org/10.1063/1.118562
Surface acoustic wave measurements of thin films and single crystals
Appl. Phys. Lett. 70, 1468–1470 (1997)
https://doi.org/10.1063/1.118564
Formation of phase intergrowth in the syntheses of Bi-superconducting thin films
Appl. Phys. Lett. 70, 1471–1473 (1997)
https://doi.org/10.1063/1.118565
Large enhancement by ion irradiation for thick films prepared by photoassisted metalorganic chemical vapor deposition
Appl. Phys. Lett. 70, 1474–1476 (1997)
https://doi.org/10.1063/1.118566
Large positive magnetoresistance in Cr/Ag/Cr trilayers
Appl. Phys. Lett. 70, 1477–1479 (1997)
https://doi.org/10.1063/1.118567
High power electrochemical capacitors based on carbon nanotube electrodes
Appl. Phys. Lett. 70, 1480–1482 (1997)
https://doi.org/10.1063/1.118568
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.