Skip Nav Destination
Issues
Intensity profile in a distributed feedback fiber laser characterized by a green fluorescence scanning technique
Appl. Phys. Lett. 69, 3773–3775 (1996)
https://doi.org/10.1063/1.116994
Oxide‐free blue photoluminescence from photochemically etched porous silicon
Appl. Phys. Lett. 69, 3779–3781 (1996)
https://doi.org/10.1063/1.116996
Heterodyne interferometer with two‐wave mixing in photorefractive crystals for ultrasound detection on rough surfaces
Appl. Phys. Lett. 69, 3782–3784 (1996)
https://doi.org/10.1063/1.116997
Mach–Zehnder interferometer measurement of the Pockels effect in a poled polymer film with a coplanar electrode structure
Appl. Phys. Lett. 69, 3788–3790 (1996)
https://doi.org/10.1063/1.116999
Time evolution of structural changes and second‐order optical nonlinearity of hemicyanine doped silica film
Appl. Phys. Lett. 69, 3791–3793 (1996)
https://doi.org/10.1063/1.117000
Efficient green light‐emitting diodes from a phenylated derivative of poly(p‐phenylene–vinylene)
Appl. Phys. Lett. 69, 3794–3796 (1996)
https://doi.org/10.1063/1.117001
Defect structures in metallic photonic crystals
Appl. Phys. Lett. 69, 3797–3799 (1996)
https://doi.org/10.1063/1.117002
Output performance of a dye‐doped sol‐gel silica laser in the near UV
Appl. Phys. Lett. 69, 3800–3802 (1996)
https://doi.org/10.1063/1.117109
Large photoinduced ferroelectric coercive field increase and photodefined domain pattern in lithium‐tantalate crystal
Appl. Phys. Lett. 69, 3803–3805 (1996)
https://doi.org/10.1063/1.117110
High resolution fluorescence imaging with cantilevered near‐field fiber optic probes
Appl. Phys. Lett. 69, 3809–3811 (1996)
https://doi.org/10.1063/1.117112
Fourth‐harmonic generation of picosecond glass laser pulses with cesium lithium borate crystals
Appl. Phys. Lett. 69, 3812–3814 (1996)
https://doi.org/10.1063/1.117113
Improving the plasma immersion ion implantation impact energy inside a cylindrical bore by using an auxiliary electrode
Appl. Phys. Lett. 69, 3815–3817 (1996)
https://doi.org/10.1063/1.117114
Stochastic electron heating in bounded radio‐frequency plasmas
Appl. Phys. Lett. 69, 3818–3820 (1996)
https://doi.org/10.1063/1.117115
Kinetics of processes in the Ti–Si1−xGex systems
Appl. Phys. Lett. 69, 3821–3823 (1996)
https://doi.org/10.1063/1.117116
Characterization of 3C–SiC crystals grown by thermal decomposition of methyltrichlorosilane
Appl. Phys. Lett. 69, 3824–3826 (1996)
https://doi.org/10.1063/1.117117
Brillouin spectroscopy on dried sonogels
M. García‐Hernández; R. J. Jiménez‐Riobóo; C. Prieto; J. J. Fuentes‐Gallego; E. Blanco; M. Ramírez‐del‐Solar
Appl. Phys. Lett. 69, 3827–3829 (1996)
https://doi.org/10.1063/1.117118
Measuring Ge segregation by real‐time stress monitoring during Si1−xGex molecular beam epitaxy
Appl. Phys. Lett. 69, 3830–3832 (1996)
https://doi.org/10.1063/1.117119
Quantitative orientational analysis of a polymeric material (Kevlar® fibers) with x‐ray microspectroscopy
Appl. Phys. Lett. 69, 3833–3835 (1996)
https://doi.org/10.1063/1.117120
Electron paramagnetic resonance characterization of diamond films fabricated with different methane concentrations
Appl. Phys. Lett. 69, 3836–3838 (1996)
https://doi.org/10.1063/1.117121
Helium ion‐induced stoichiometry modification in hydrogenated silicon oxide films
Appl. Phys. Lett. 69, 3845–3847 (1996)
https://doi.org/10.1063/1.117124
Thermal stability of hydrogen in LiAlO2 and LiGaO2
Appl. Phys. Lett. 69, 3848–3850 (1996)
https://doi.org/10.1063/1.117125
Electron paramagnetic resonance of erbium doped silicon
Appl. Phys. Lett. 69, 3854–3856 (1996)
https://doi.org/10.1063/1.117127
Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors
Appl. Phys. Lett. 69, 3857–3859 (1996)
https://doi.org/10.1063/1.117128
Leakage current and electrical breakdown in metal‐organic chemical vapor deposited TiO2 dielectrics on silicon substrates
Appl. Phys. Lett. 69, 3860–3862 (1996)
https://doi.org/10.1063/1.117129
p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source
Appl. Phys. Lett. 69, 3863–3865 (1996)
https://doi.org/10.1063/1.117130
Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6
Appl. Phys. Lett. 69, 3869–3871 (1996)
https://doi.org/10.1063/1.117132
High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
Appl. Phys. Lett. 69, 3872–3874 (1996)
https://doi.org/10.1063/1.117133
Formation of self‐assembled InP islands on a GaInP/GaAs(311)A surface
Appl. Phys. Lett. 69, 3878–3880 (1996)
https://doi.org/10.1063/1.117135
Epitaxy‐ready Si/SiO2 Bragg reflectors by multiple separation‐by‐implanted‐oxygen
Appl. Phys. Lett. 69, 3881–3883 (1996)
https://doi.org/10.1063/1.117557
Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy
Appl. Phys. Lett. 69, 3884–3886 (1996)
https://doi.org/10.1063/1.117558
Self‐assembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation
Appl. Phys. Lett. 69, 3887–3889 (1996)
https://doi.org/10.1063/1.117559
Nondestructive measurements of stoichiometry in undoped semi‐insulating gallium arsenide by x‐ray bond method
Appl. Phys. Lett. 69, 3890–3892 (1996)
https://doi.org/10.1063/1.117560
Gain characteristics of gain‐guided II–VI laser diodes
H. Yoshida; Y. Gonno; K. Nakano; S. Taniguchi; T. Hino; A. Ishibashi; M. Ikeda; S. L. Chuang; J. Hegarty
Appl. Phys. Lett. 69, 3893–3895 (1996)
https://doi.org/10.1063/1.117561
Room‐temperature luminescence from erbium‐doped silicon thin films prepared by laser ablation
Appl. Phys. Lett. 69, 3896–3898 (1996)
https://doi.org/10.1063/1.117562
Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon
Appl. Phys. Lett. 69, 3899–3901 (1996)
https://doi.org/10.1063/1.117563
Photoluminescence wandering in single CdSe nanocrystals
Appl. Phys. Lett. 69, 3905–3907 (1996)
https://doi.org/10.1063/1.117565
Room‐temperature visible photoluminescence from silicon‐rich oxide layers deposited by an electron cyclotron resonance plasma source
Keunjoo Kim; M. S. Suh; T S. Kim; C. J. Youn; E. K. Suh; Y. J. Shin; K. B. Lee; H. J. Lee; M. H. An; H. J. Lee; H. Ryu
Appl. Phys. Lett. 69, 3908–3910 (1996)
https://doi.org/10.1063/1.117566
Uniform deposition of YBa2Cu3O7 thin films over an 8 inch diameter area by a 90° off‐axis sputtering technique
Appl. Phys. Lett. 69, 3911–3913 (1996)
https://doi.org/10.1063/1.117567
Critical currents and Josephson penetration depth in planar thin‐film high‐Tc Josephson junctions
Appl. Phys. Lett. 69, 3914–3916 (1996)
https://doi.org/10.1063/1.117568
An increase of structural order parameter in Fe–Co–V soft magnetic alloy after thermal aging
Appl. Phys. Lett. 69, 3917–3919 (1996)
https://doi.org/10.1063/1.117569
Micromechanical detection of magnetic resonance by angular momentum absorption
Appl. Phys. Lett. 69, 3920–3922 (1996)
https://doi.org/10.1063/1.117570
Optical and magneto‐optical properties of Co(001)/Ge/Co sandwiches
S. S. Kang; G. J. Jin; X. N. Xu; A. Hu; H. R. Zhai; S. S. Jiang; Y. Chen; W. R. Zhu; G. S. Dong; S. M. Zhou; X. Jin; J. W. Feng
Appl. Phys. Lett. 69, 3923–3925 (1996)
https://doi.org/10.1063/1.117571
Lattice effects on the magnetic and transport properties of La2/3−xNdxCa1/3MnO3
Appl. Phys. Lett. 69, 3926–3928 (1996)
https://doi.org/10.1063/1.117572
The effects of oxygen content on the magnetoresistive behavior in La–Ca–Mn–O films grown on Si
Appl. Phys. Lett. 69, 3929–3931 (1996)
https://doi.org/10.1063/1.117573
Use of the anisotropic magnetoresistance to measure exchange anisotropy in Co/CoO bilayers
Appl. Phys. Lett. 69, 3932–3934 (1996)
https://doi.org/10.1063/1.117574
Magnetostatic effects in giant magnetoresistive spin‐valve devices
Appl. Phys. Lett. 69, 3935–3937 (1996)
https://doi.org/10.1063/1.117575
Nonequilibrium photon‐induced hotspot: A new mechanism for photodetection in ultrathin metallic films
Appl. Phys. Lett. 69, 3938–3940 (1996)
https://doi.org/10.1063/1.117576
Electromigration of aluminum cathodes in polymer‐based electroluminescent devices
Appl. Phys. Lett. 69, 3941–3943 (1996)
https://doi.org/10.1063/1.117577
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.