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Experimental characterization of reactive ion etched germanium diffraction gratings at 10.6 μm
J. Stiens; W. Ranson; R. Cottam; C. De Tandt; R. Vounckx; V. Kotov; G. Shkerdin; B. Dhoedt; R. Baets
Appl. Phys. Lett. 69, 3453–3455 (1996)
https://doi.org/10.1063/1.117249
Photoluminescence related to the two‐dimensional electron gas at a GaN/AlGaN heterointerface
Appl. Phys. Lett. 69, 3456–3458 (1996)
https://doi.org/10.1063/1.117250
Vacuum field induced mixing of light and heavy‐hole excitons in a semiconductor microcavity
Appl. Phys. Lett. 69, 3465–3467 (1996)
https://doi.org/10.1063/1.117253
Near field scanning optical microscopy measurements of optical intensity distributions in semiconductor channel waveguides
Appl. Phys. Lett. 69, 3471–3473 (1996)
https://doi.org/10.1063/1.117255
Wide bandwidth (100) GaAs/fluorides quarter‐wavelength Bragg reflectors grown by molecular beam epitaxy
Appl. Phys. Lett. 69, 3474–3476 (1996)
https://doi.org/10.1063/1.117256
Ring and stripe oxide‐confined vertical‐cavity surface‐emitting lasers
Appl. Phys. Lett. 69, 3477–3479 (1996)
https://doi.org/10.1063/1.117257
Manipulation of growth modes in heteroepitaxy: Ni/Cu(111)
Appl. Phys. Lett. 69, 3492–3494 (1996)
https://doi.org/10.1063/1.117222
High electron mobility in bipolar composites of organic molecules
Appl. Phys. Lett. 69, 3495–3497 (1996)
https://doi.org/10.1063/1.117223
Control of Co flux through ternary compound for the formation of epitaxial CoSi2 using Co/Ti/Si system
Appl. Phys. Lett. 69, 3498–3500 (1996)
https://doi.org/10.1063/1.117224
Structural and mechanical properties of (B0.5−xSix)N0.5 films synthesized by dual‐ion‐beam deposition
Appl. Phys. Lett. 69, 3501–3503 (1996)
https://doi.org/10.1063/1.117225
Local electron field emission characteristics of pulsed laser deposited diamondlike carbon films
Appl. Phys. Lett. 69, 3504–3506 (1996)
https://doi.org/10.1063/1.117226
Evidence of the role of positive bias in diamond growth by hot filament chemical vapor deposition
Appl. Phys. Lett. 69, 3507–3509 (1996)
https://doi.org/10.1063/1.117227
Comparison of electrical and luminescence data for the A center in CdTe
Appl. Phys. Lett. 69, 3510–3512 (1996)
https://doi.org/10.1063/1.117228
Effect of thermal annealing on optical emission properties of low‐temperature grown AlGaAs/GaAs multiple quantum wells
Appl. Phys. Lett. 69, 3513–3515 (1996)
https://doi.org/10.1063/1.117229
High‐reliability blue‐shifted InGaAsP/InP lasers
J.‐P. Noël; D. Melville; T. Jones; F. R. Shepherd; C. J. Miner; N. Puetz; K. Fox; P. J. Poole; Y. Feng; E. S. Koteles; S. Charbonneau; R. D. Goldberg; I. V. Mitchell
Appl. Phys. Lett. 69, 3516–3518 (1996)
https://doi.org/10.1063/1.117230
A near‐field scanning optical microscopy study of the photoluminescence from GaN films
Appl. Phys. Lett. 69, 3519–3521 (1996)
https://doi.org/10.1063/1.117231
Far‐infrared emission from parabolically graded quantum wells
Appl. Phys. Lett. 69, 3522–3524 (1996)
https://doi.org/10.1063/1.117232
Vacuum ultraviolet reflectivity measurements of thin‐film electroluminescent phosphors
Appl. Phys. Lett. 69, 3525–3527 (1996)
https://doi.org/10.1063/1.117233
Submicron and low‐temperature ohmic contacts on δ‐doped GaAs
Appl. Phys. Lett. 69, 3528–3530 (1996)
https://doi.org/10.1063/1.117234
InAs channel heterostructure‐field effect transistors with InAs/AlSb short‐period superlattice barriers
Appl. Phys. Lett. 69, 3531–3533 (1996)
https://doi.org/10.1063/1.117235
Recrystallization of MeV Si implanted 6H‐SiC
Appl. Phys. Lett. 69, 3534–3536 (1996)
https://doi.org/10.1063/1.117236
Schottky barriers and contact resistances on p‐type GaN
Appl. Phys. Lett. 69, 3537–3539 (1996)
https://doi.org/10.1063/1.117237
Evidence for the role of the surface potential and native oxide on thermal properties of crystalline Si
Appl. Phys. Lett. 69, 3546–3548 (1996)
https://doi.org/10.1063/1.117240
Study of the ground state splitting of N–O complexes in Cz–Si grown under nitrogen atmosphere
Appl. Phys. Lett. 69, 3549–3550 (1996)
https://doi.org/10.1063/1.117241
Inhibited oxidation in low‐temperature grown GaAs surface layers observed by photoelectron spectroscopy
Appl. Phys. Lett. 69, 3551–3553 (1996)
https://doi.org/10.1063/1.117242
Carrier dynamics in InP with metallic precipitates
Appl. Phys. Lett. 69, 3554–3556 (1996)
https://doi.org/10.1063/1.117243
Rectification properties and interface states of heterojunctions between solid C60 and n‐type GaAs
Appl. Phys. Lett. 69, 3557–3559 (1996)
https://doi.org/10.1063/1.117244
Low resistivity copper germanide on (100) Si for contacts and interconnections
Appl. Phys. Lett. 69, 3560–3562 (1996)
https://doi.org/10.1063/1.117245
High quality GaN–InGaN heterostructures grown on (111) silicon substrates
J. W. Yang; C. J. Sun; Q. Chen; M. Z. Anwar; M. Asif Khan; S. A. Nikishin; G. A. Seryogin; A. V. Osinsky; L. Chernyak; H. Temkin; Chimin Hu; S. Mahajan
Appl. Phys. Lett. 69, 3566–3568 (1996)
https://doi.org/10.1063/1.117247
Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodes
Appl. Phys. Lett. 69, 3569–3571 (1996)
https://doi.org/10.1063/1.117248
Disordering of the ZnCdSe single quantum well structure by Cd diffusion
Appl. Phys. Lett. 69, 3572–3574 (1996)
https://doi.org/10.1063/1.117210
Transient subpicosecond Raman studies of electron velocity overshoot in an InP p‐i‐n nanostructure semiconductor
Appl. Phys. Lett. 69, 3575–3577 (1996)
https://doi.org/10.1063/1.117211
InGaAs metal‐semiconductor‐metal photodetectors with engineered Schottky barrier heights
Appl. Phys. Lett. 69, 3578–3580 (1996)
https://doi.org/10.1063/1.117212
Investigation of transverse Peltier effect on top‐seeded melt textureYBa2Cu3O7−δ
Appl. Phys. Lett. 69, 3587–3589 (1996)
https://doi.org/10.1063/1.117215
Magneto‐optic observation of anomalous Meissner current flow in superconducting thin films with slits
Appl. Phys. Lett. 69, 3590–3592 (1996)
https://doi.org/10.1063/1.117216
NiMn‐pinned spin valves with high pinning field made by ion beam sputtering
Appl. Phys. Lett. 69, 3593–3595 (1996)
https://doi.org/10.1063/1.117217
Magnetocaloric effect in La0.67Ca0.33MnOδ and La0.60Y0.07Ca0.33MnOδ bulk materials
Appl. Phys. Lett. 69, 3596–3598 (1996)
https://doi.org/10.1063/1.117218
Effect of trivalent ion composition on the magnetoresistance behavior of LaxNd0.6−xSr0.40MnO3−δ films
Appl. Phys. Lett. 69, 3599–3601 (1996)
https://doi.org/10.1063/1.117219
Piezoelectric properties of Ca‐modified PbTiO3 thin films
Appl. Phys. Lett. 69, 3602–3604 (1996)
https://doi.org/10.1063/1.117220
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Shining light in a heartbeat: Controlling cardiac bioelectricity with membrane-targeted photoswitches
Chiara Florindi, Giulia Simoncini, et al.
First-principles study of defects and doping limits in CaO
Zhenkun Yuan, Geoffroy Hautier