Skip Nav Destination
Issues
Integrated three‐color organic light‐emitting devices
Appl. Phys. Lett. 69, 3117–3119 (1996)
https://doi.org/10.1063/1.116800
Native‐oxide laterally confined whispering‐gallery mode laser with vertical emission
Appl. Phys. Lett. 69, 3120–3122 (1996)
https://doi.org/10.1063/1.116801
Narrow linewidth, tunable distributed feedback photodetector
Appl. Phys. Lett. 69, 3123–3124 (1996)
https://doi.org/10.1063/1.116802
Linearly polarized, single‐frequency, widely tunable Er:Yb bulk laser at around 1550 nm wavelength
Appl. Phys. Lett. 69, 3128–3130 (1996)
https://doi.org/10.1063/1.116804
45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver
Appl. Phys. Lett. 69, 3131–3133 (1996)
https://doi.org/10.1063/1.116805
Influence of carrier transport/capture and gain flattening in picosecond pulse generation of InGaAs microcavity lasers
Appl. Phys. Lett. 69, 3137–3139 (1996)
https://doi.org/10.1063/1.116807
Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser
Appl. Phys. Lett. 69, 3140–3142 (1996)
https://doi.org/10.1063/1.116808
Asymmetric, reflection mode nonlinear Fabry–Perot modulator using bacteriorhodopsin
Appl. Phys. Lett. 69, 3143–3145 (1996)
https://doi.org/10.1063/1.116809
Laser ablation of dielectrics with pulse durations between 20 fs and 3 ps
Appl. Phys. Lett. 69, 3146–3148 (1996)
https://doi.org/10.1063/1.116810
Photoluminescence in amorphous Si/SiO2 superlattices fabricated by magnetron sputtering
Appl. Phys. Lett. 69, 3149–3151 (1996)
https://doi.org/10.1063/1.116811
Size effects in small oxide confined vertical‐cavity surface‐emitting lasers
Appl. Phys. Lett. 69, 3152–3154 (1996)
https://doi.org/10.1063/1.116812
Femtosecond violet light generation by quasi‐phase‐matched frequency doubling in optical superlattice LiNbO3
Yan‐Qing Lu; Ya‐Lin Lu; Chen‐Chen Xue; Jian‐Jun Zheng; Xiang‐Fei Chen; Gui‐Peng Luo; Nai‐Ben Ming; Bao‐Hua Feng; Xiu‐Lan Zhang
Appl. Phys. Lett. 69, 3155–3157 (1996)
https://doi.org/10.1063/1.116813
A desensitized displacement interferometer applied to impact recovery experiments
Appl. Phys. Lett. 69, 3161–3163 (1996)
https://doi.org/10.1063/1.116815
Observation of a large dc Kerr effect in the intervalence subband of Si1−xGex/Si multiple quantum wells
Appl. Phys. Lett. 69, 3164–3166 (1996)
https://doi.org/10.1063/1.116816
The effect of dislocation contrast on x‐ray line broadening: A new approach to line profile analysis
Appl. Phys. Lett. 69, 3173–3175 (1996)
https://doi.org/10.1063/1.117951
Implantation and growth of large β‐FeSi2 precipitates and α‐FeSi2 network structures in silicon
Appl. Phys. Lett. 69, 3176–3178 (1996)
https://doi.org/10.1063/1.117952
Controlled manipulation of ethen molecules and lead atoms on Cu(211) with a low temperature scanning tunneling microscope
Appl. Phys. Lett. 69, 3185–3187 (1996)
https://doi.org/10.1063/1.117955
X‐ray diffraction and nuclear magnetic resonance studies of Y2Fe17
Appl. Phys. Lett. 69, 3194–3196 (1996)
https://doi.org/10.1063/1.117958
Evidence for electron trapping by Sm dimer and trimer centers in Sm doped CaF2
Appl. Phys. Lett. 69, 3197–3199 (1996)
https://doi.org/10.1063/1.117959
Kohlrausch exponent of amorphous Zr65Al7.5Cu27.5 determined by anelastic relaxation measurements
Appl. Phys. Lett. 69, 3200–3202 (1996)
https://doi.org/10.1063/1.117960
Control of structure and optical anisotropy in porous Si by magnetic‐field assisted anodization
Appl. Phys. Lett. 69, 3206–3208 (1996)
https://doi.org/10.1063/1.117962
p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm
D. K. Sengupta; S. L. Jackson; D. Ahmari; H. C. Kuo; J. I. Malin; S. Thomas; M. Feng; G. E. Stillman; Y. C. Chang; L. Li; H. C. Liu
Appl. Phys. Lett. 69, 3209–3211 (1996)
https://doi.org/10.1063/1.117963
Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond
Appl. Phys. Lett. 69, 3215–3217 (1996)
https://doi.org/10.1063/1.117965
InAs/GaSb(001) valence‐band offset: Independence of interface composition and strain
Appl. Phys. Lett. 69, 3218–3220 (1996)
https://doi.org/10.1063/1.118015
Molecular‐beam epitaxy of high‐quality ZnSe homo‐epitaxial layers on solid‐phase recrystallized substrates
Appl. Phys. Lett. 69, 3221–3223 (1996)
https://doi.org/10.1063/1.118016
Room temperature optical gain in sol‐gel derived CdS quantum dots
Appl. Phys. Lett. 69, 3224–3226 (1996)
https://doi.org/10.1063/1.118017
Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine
Appl. Phys. Lett. 69, 3227–3229 (1996)
https://doi.org/10.1063/1.118018
Synthesis of nanocrystalline gallium nitride in silica aerogels
T. J. Goodwin; V. J. Leppert; C. A. Smith; S. H. Risbud; M. Niemeyer; P. P. Power; H. W. H. Lee; L. W. Hrubesh
Appl. Phys. Lett. 69, 3230–3232 (1996)
https://doi.org/10.1063/1.118019
Tuning of ZnSe–GaAs band discontinuities in heterojunction diodes
Vittorio Pellegrini; Marco Börger; Michele Lazzeri; Fabio Beltram; Jens J. Paggel; Lucia Sorba; Silvia Rubini; Marco Lazzarino; Alfonso Franciosi; Jean‐Marc Bonard; Jean‐Daniel Ganiére
Appl. Phys. Lett. 69, 3233–3235 (1996)
https://doi.org/10.1063/1.118020
Site‐specific reaction kinetics for gallium arsenide metalorganic vapor‐phase epitaxy
Appl. Phys. Lett. 69, 3236–3238 (1996)
https://doi.org/10.1063/1.118021
Structure of high resistivity GaAs film grown by low‐temperature metalorganic chemical vapor deposition
Appl. Phys. Lett. 69, 3239–3241 (1996)
https://doi.org/10.1063/1.118022
Correlation between the valence‐ and conduction‐band‐tail energies in hydrogenated amorphous silicon
Appl. Phys. Lett. 69, 3242–3244 (1996)
https://doi.org/10.1063/1.118023
Strain field imaging on Si/SiGe(001)‐(2×1) surfaces by low‐energy electron microscopy and scanning tunneling microscopy
Appl. Phys. Lett. 69, 3245–3247 (1996)
https://doi.org/10.1063/1.118024
Pyroelectricity in gallium nitride thin films
Appl. Phys. Lett. 69, 3254–3256 (1996)
https://doi.org/10.1063/1.118027
High‐temperature superconducting Josephson fluxon–antifluxon transistors
Appl. Phys. Lett. 69, 3257–3259 (1996)
https://doi.org/10.1063/1.118028
Infrared quenching of photoinduced persistent conductivity in YBa2Cu3O6+x
Appl. Phys. Lett. 69, 3260–3262 (1996)
https://doi.org/10.1063/1.118029
Observation of large low‐field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites
J. Z. Sun; W. J. Gallagher; P. R. Duncombe; L. Krusin‐Elbaum; R. A. Altman; A. Gupta; Yu Lu; G. Q. Gong; Gang Xiao
Appl. Phys. Lett. 69, 3266–3268 (1996)
https://doi.org/10.1063/1.118031
Imaging and magnetometry of switching in nanometer‐scale iron particles
S. Gider; J. Shi; D. D. Awschalom; P. F. Hopkins; K. L. Campman; A. C. Gossard; A. D. Kent; S. von Molnár
Appl. Phys. Lett. 69, 3269–3271 (1996)
https://doi.org/10.1063/1.118032
Near‐field scanning microwave microscope with 100 μm resolution
Appl. Phys. Lett. 69, 3272–3274 (1996)
https://doi.org/10.1063/1.118033
A nonvolatile ferroelectric memory device with a floating gate
Appl. Phys. Lett. 69, 3275–3276 (1996)
https://doi.org/10.1063/1.118034
Uncooled thermal imaging using a piezoresistive microcantilever
Appl. Phys. Lett. 69, 3277–3279 (1996)
https://doi.org/10.1063/1.117309
Microlithographic techniques for laser assisted fabrication of bioelectronic devices
Appl. Phys. Lett. 69, 3280–3282 (1996)
https://doi.org/10.1063/1.117310
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.