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Dynamic response of electro‐optic effect in free‐standing ferroelectric liquid crystal film
Appl. Phys. Lett. 69, 1503–1505 (1996)
https://doi.org/10.1063/1.117985
Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon‐germanium
Appl. Phys. Lett. 69, 1506–1508 (1996)
https://doi.org/10.1063/1.117986
Influence of light on the coercive field of repoled strontium barium niobate: The role of secondary repoling
Appl. Phys. Lett. 69, 1509–1511 (1996)
https://doi.org/10.1063/1.117987
Excitonic optical properties in fractional‐layer‐superlattice wire structures
Appl. Phys. Lett. 69, 1512–1514 (1996)
https://doi.org/10.1063/1.117988
Intracavity spectroscopy in vertical cavity surface‐emitting lasers for micro‐optical‐mechanical systems
Appl. Phys. Lett. 69, 1517–1519 (1996)
https://doi.org/10.1063/1.117990
Polymeric optical intensity modulator optimized in quasi‐single mode operation
Appl. Phys. Lett. 69, 1520–1522 (1996)
https://doi.org/10.1063/1.117991
Time‐resolved luminescence studies of heavily nitrogen doped ZnSe
Appl. Phys. Lett. 69, 1523–1525 (1996)
https://doi.org/10.1063/1.117992
Light distribution measurements in absorbing materials by optical detection of laser‐induced stress waves
Appl. Phys. Lett. 69, 1526–1528 (1996)
https://doi.org/10.1063/1.117993
Monolithic polycapillary focusing optics and their applications in microbeam x‐ray fluorescence
Appl. Phys. Lett. 69, 1529–1531 (1996)
https://doi.org/10.1063/1.117994
8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers
L. J. Mawst; A. Bhattacharya; J. Lopez; D. Botez; D. Z. Garbuzov; L. DeMarco; J. C. Connolly; M. Jansen; F. Fang; R. F. Nabiev
Appl. Phys. Lett. 69, 1532–1534 (1996)
https://doi.org/10.1063/1.117995
Optimization of power extraction in a high‐power soliton fiber ring laser containing a chirped fiber grating
Appl. Phys. Lett. 69, 1535–1537 (1996)
https://doi.org/10.1063/1.117996
High efficiency diode pumping of a saturable Bragg reflector‐mode‐locked Cr:LiSAF femtosecond laser
Appl. Phys. Lett. 69, 1538–1540 (1996)
https://doi.org/10.1063/1.117997
In situ growth of optically active erbium doped Al2O3 thin films by pulsed laser deposition
Appl. Phys. Lett. 69, 1541–1543 (1996)
https://doi.org/10.1063/1.117998
Au49+, Pb50+, and Ta48+ ions from laser‐produced plasmas
E. Woryna; P. Parys; J. Wol/owski; L. Láska; J. Krása; K. Mašek; M. Pfeifer; B. Králiková; J. Skála; P. Straka; K. Rohlena
Appl. Phys. Lett. 69, 1547–1549 (1996)
https://doi.org/10.1063/1.117057
Axial extraction of high‐power microwaves from relativistic traveling wave amplifiers
Appl. Phys. Lett. 69, 1550–1552 (1996)
https://doi.org/10.1063/1.117058
Laser induced stimulated emission for hydrogen atom density measurements in a hydrogen pulsed microwave discharge
Appl. Phys. Lett. 69, 1553–1555 (1996)
https://doi.org/10.1063/1.117059
Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
S. Ruvimov; Z. Liliental‐Weber; J. Washburn; K. J. Duxstad; E. E. Haller; Z.‐F. Fan; S. N. Mohammad; W. Kim; A. E. Botchkarev; H. Morkoç
Appl. Phys. Lett. 69, 1556–1558 (1996)
https://doi.org/10.1063/1.117060
Spectra investigation on Hall–Petch relationship in nanocrystalline Fe78Si9B13 alloy
Appl. Phys. Lett. 69, 1559–1561 (1996)
https://doi.org/10.1063/1.117061
Thermal resistance of thin diamond films deposited at low temperatures
Appl. Phys. Lett. 69, 1562–1564 (1996)
https://doi.org/10.1063/1.117062
Domain inversion in ferroelectric MgO:LiNbO3 by applying electric fields
Appl. Phys. Lett. 69, 1565–1567 (1996)
https://doi.org/10.1063/1.117031
High‐resolution x‐ray diffraction study of piezoelectric InGaAs/GaAs multiquantum well p‐i‐n photodiodes grown on (111)B GaAs
A. Sanz‐Hervás; M. Aguilar; J. L. Sánchez‐Rojas; A. Sacedón; E. Calleja; E. Muñoz; E. J. Abril; M. López
Appl. Phys. Lett. 69, 1574–1576 (1996)
https://doi.org/10.1063/1.117034
Ultrastable emission from a metal–oxide–semiconductor field‐effect transistor‐structured Si emitter tip
Appl. Phys. Lett. 69, 1577–1578 (1996)
https://doi.org/10.1063/1.117035
An optical study of interdiffusion in ZnSe/ZnCdSe
Appl. Phys. Lett. 69, 1579–1581 (1996)
https://doi.org/10.1063/1.117036
Densification of amorphous silicon prepared by hydrogen‐ion‐beam‐assisted evaporation
Appl. Phys. Lett. 69, 1582–1584 (1996)
https://doi.org/10.1063/1.117037
Universal curves for optical power degradation of II–VI light‐emitting diodes
Appl. Phys. Lett. 69, 1588–1590 (1996)
https://doi.org/10.1063/1.117039
Effect of BF2 implantation on ultrathin gate oxide reliability
Appl. Phys. Lett. 69, 1591–1592 (1996)
https://doi.org/10.1063/1.117040
Mapping electrically active dopant profiles by field‐emission scanning electron microscopy
Appl. Phys. Lett. 69, 1593–1595 (1996)
https://doi.org/10.1063/1.117041
Longitudinal optical phonon relaxation in a GaAs/AlGaAs triple barrier tunnel diode at strong perpendicular magnetic fields
Appl. Phys. Lett. 69, 1596–1598 (1996)
https://doi.org/10.1063/1.117042
Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current–voltage and capacitance–voltage measurements
Appl. Phys. Lett. 69, 1599–1601 (1996)
https://doi.org/10.1063/1.117043
Time‐dependent study of low energy electron beam irradiation of Mg‐doped GaN grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 69, 1605–1607 (1996)
https://doi.org/10.1063/1.117045
Fabrication of flexible monocrystalline ZnSe‐based foils and membranes
Appl. Phys. Lett. 69, 1608–1610 (1996)
https://doi.org/10.1063/1.117046
Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low‐pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 69, 1614–1616 (1996)
https://doi.org/10.1063/1.117048
High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 °C
Appl. Phys. Lett. 69, 1617–1619 (1996)
https://doi.org/10.1063/1.117049
Determination of crystallite propagation in laser annealed amorphous silicon by normal incidence spectral reflectance
Appl. Phys. Lett. 69, 1623–1625 (1996)
https://doi.org/10.1063/1.117051
Microwave surface resistance of YBa2Cu3Cu3O7−x films on polycrystalline ceramic substrates with textured buffer layers
A. T. Findikoglu; S. R. Foltyn; P. N. Arendt; J. R. Groves; Q. X. Jia; E. J. Peterson; X. D. Wu; D. W. Reagor
Appl. Phys. Lett. 69, 1626–1628 (1996)
https://doi.org/10.1063/1.117052
Observation of ion gettering effects in high‐temperature superconducting oxide material
Appl. Phys. Lett. 69, 1629–1630 (1996)
https://doi.org/10.1063/1.117053
High energy resolution x‐ray detection based on a coupled Fiske cavity and Josephson junction oscillator
Appl. Phys. Lett. 69, 1631–1633 (1996)
https://doi.org/10.1063/1.117054
Shunted bicrystal Josephson junctions arrays for voltage standards
Appl. Phys. Lett. 69, 1634–1636 (1996)
https://doi.org/10.1063/1.117055
Determining the absolute value of penetration depth of large area films
Appl. Phys. Lett. 69, 1637–1639 (1996)
https://doi.org/10.1063/1.117056
Organic insulating films of nanometer thicknesses
Appl. Phys. Lett. 69, 1646–1648 (1996)
https://doi.org/10.1063/1.117444
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.