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Theoretical and experimental study of silicon‐based angular filters
Appl. Phys. Lett. 68, 3525–3527 (1996)
https://doi.org/10.1063/1.116518
Optical matrix for clock distribution and synchronous operation in two‐dimensional array devices
Appl. Phys. Lett. 68, 3528–3530 (1996)
https://doi.org/10.1063/1.116519
Multipurpose sensor tips for scanning near‐field microscopy
Appl. Phys. Lett. 68, 3531–3533 (1996)
https://doi.org/10.1063/1.116520
All‐optical synchronization of self‐pulsating laser diodes
Appl. Phys. Lett. 68, 3534–3536 (1996)
https://doi.org/10.1063/1.116521
A four channel polarization and wavelength separation element using substrate‐mode stacked holograms
Appl. Phys. Lett. 68, 3537–3539 (1996)
https://doi.org/10.1063/1.116522
Fivefold femtosecond pulse compression by sum frequency generation
Appl. Phys. Lett. 68, 3540–3542 (1996)
https://doi.org/10.1063/1.116523
Stable operation of self‐sustained pulsation in 650‐nm‐band AlGaInP visible lasers with highly doped saturable absorbing layer
Appl. Phys. Lett. 68, 3543–3545 (1996)
https://doi.org/10.1063/1.116524
Upconversion dye‐doped polymer fiber laser
Appl. Phys. Lett. 68, 3549–3551 (1996)
https://doi.org/10.1063/1.116633
Optical quadratic nonlinearity in multilayer corona‐poled glass films
Appl. Phys. Lett. 68, 3552–3554 (1996)
https://doi.org/10.1063/1.116634
Low‐frequency optical response in epitaxial thin films of La0.67Ca0.33MnO3 exhibiting colossal magnetoresistance
Appl. Phys. Lett. 68, 3555–3557 (1996)
https://doi.org/10.1063/1.116635
The nucleation of highly oriented diamond on silicon via an alternating current substrate bias
Appl. Phys. Lett. 68, 3558–3560 (1996)
https://doi.org/10.1063/1.116636
Epicentral and near epicenter surface displacements on pulsed laser irradiated metallic surfaces
Appl. Phys. Lett. 68, 3561–3563 (1996)
https://doi.org/10.1063/1.116637
Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane
Appl. Phys. Lett. 68, 3567–3569 (1996)
https://doi.org/10.1063/1.116639
Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon
Appl. Phys. Lett. 68, 3570–3572 (1996)
https://doi.org/10.1063/1.116640
Photorefractive p‐i‐n diode quantum well operating at 1.55 μm
Appl. Phys. Lett. 68, 3576–3578 (1996)
https://doi.org/10.1063/1.116642
Real‐time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)
Appl. Phys. Lett. 68, 3579–3581 (1996)
https://doi.org/10.1063/1.116643
Photoluminescence in ultrafine zinc sulfide thin film
Appl. Phys. Lett. 68, 3582–3584 (1996)
https://doi.org/10.1063/1.116644
Electrical and structural properties of PtSi films in deep submicron lines
Appl. Phys. Lett. 68, 3588–3590 (1996)
https://doi.org/10.1063/1.116646
Deposition of hydrogen‐free diamond‐like carbon film by plasma enhanced chemical vapor deposition
Appl. Phys. Lett. 68, 3594–3595 (1996)
https://doi.org/10.1063/1.116648
InGaAs quantum wires grown by low pressure metalorganic chemical vapor deposition on InP V‐grooves
Appl. Phys. Lett. 68, 3596–3598 (1996)
https://doi.org/10.1063/1.116649
Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy
Appl. Phys. Lett. 68, 3605–3607 (1996)
https://doi.org/10.1063/1.116652
Growth and strain symmetrization of Si/Ge/C/Sn quaternary alloys by molecular beam epitaxy
Appl. Phys. Lett. 68, 3608–3610 (1996)
https://doi.org/10.1063/1.115745
Photoluminescence studies of self‐assembled InSb, GaSb, and AlSb quantum dot heterostructures
Appl. Phys. Lett. 68, 3614–3616 (1996)
https://doi.org/10.1063/1.115747
Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source
Appl. Phys. Lett. 68, 3617–3619 (1996)
https://doi.org/10.1063/1.115748
A design of reflection scanning near‐field optical microscope and its application to AlGaAs/GaAs heterostructures
Appl. Phys. Lett. 68, 3620–3622 (1996)
https://doi.org/10.1063/1.115749
Spatially resolved analyses of epitaxial and electrical properties of YBa2Cu3O7 devices
Appl. Phys. Lett. 68, 3626–3628 (1996)
https://doi.org/10.1063/1.115751
Overcoming weak links at grain boundaries in Bi2Sr2CaCu2Ox thick films by incorporation of superconducting whiskers
Ryoji Funahashi; Ichiro Matsubara; Lucangelo Dimesso; Toru Ogura; Kazuo Ueno; Hiroshi Ishikawa; Masayoshi Konishi; Nobuhito Ohno
Appl. Phys. Lett. 68, 3629–3631 (1996)
https://doi.org/10.1063/1.115752
Nanometer‐scale surface modifications of YBa2Cu3O7−δ thin films using a scanning tunneling microscope
Appl. Phys. Lett. 68, 3632–3634 (1996)
https://doi.org/10.1063/1.115753
Structure of cross‐tie wall in thin Co films resolved by magnetic force microscopy
Appl. Phys. Lett. 68, 3635–3637 (1996)
https://doi.org/10.1063/1.115754
Giant magnetoresistance of a two‐dimensional ferromagnet La2−2xCa1+2xMn2O7
Appl. Phys. Lett. 68, 3638–3640 (1996)
https://doi.org/10.1063/1.115755
Positive giant magnetoresistance in antiferromagnetic RE2Ni3Si5 (RE=Tb, Sm, Nd)
Chandan Mazumdar; A. K. Nigam; R. Nagarajan; C. Godart; L. C. Gupta; B. D. Padalia; G. Chandra; R. Vijayaraghavan
Appl. Phys. Lett. 68, 3647–3649 (1996)
https://doi.org/10.1063/1.115758
A ferroelectric transparent thin‐film transistor
M. W. J. Prins; K.‐O. Grosse‐Holz; G. Müller; J. F. M. Cillessen; J. B. Giesbers; R. P. Weening; R. M. Wolf
Appl. Phys. Lett. 68, 3650–3652 (1996)
https://doi.org/10.1063/1.115759
Simulation of scanning tunneling microscope interaction with resists
Appl. Phys. Lett. 68, 3653–3655 (1996)
https://doi.org/10.1063/1.115760
Experimental investigation of dipole‐dipole interaction in a water‐free glass particle/oil electrorheological fluid
Appl. Phys. Lett. 68, 3659–3661 (1996)
https://doi.org/10.1063/1.115762
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.