Skip Nav Destination

Issues

Select Decade

Select Year

Issue

Volume 68, Issue 22

27 May 1996

All Issues

ISSN 0003-6951

EISSN 1077-3118

Extraction of real‐space correlation function of a rough surface by light scattering using diode array detectors

Y. P. Zhao; H.‐N. Yang; G.‐C. Wang; T.‐M. Lu

Appl. Phys. Lett. 68, 3063–3065 (1996) https://doi.org/10.1063/1.116423

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Spurious momentum mismatch introduced by an approximate model of acousto‐optic interactions

Yih‐Tyng Wu; Betty Lise Anderson

Appl. Phys. Lett. 68, 3066–3068 (1996) https://doi.org/10.1063/1.116424

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Compaction‐ and photoelastic‐induced index changes in fiber Bragg gratings

H. G. Limberger; P.‐Y. Fonjallaz; R. P. Salathé; F. Cochet

Appl. Phys. Lett. 68, 3069–3071 (1996) https://doi.org/10.1063/1.116425

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Faraday rotation of Hoya FR5 glass at cryogenic temperature

Hyeon Gon Lee; Y. H. Won; G. S. Lee

Appl. Phys. Lett. 68, 3072–3074 (1996) https://doi.org/10.1063/1.116426

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Double acceptor doped Ge: A new medium for inter‐valence‐band lasers

E. Bründermann; A. M. Linhart; L. Reichertz; H. P. Röser; O. D. Dubon; W. L. Hansen; G. Sirmain; E. E. Haller

Appl. Phys. Lett. 68, 3075–3077 (1996) https://doi.org/10.1063/1.116427

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Localized Kerr‐type nonlinearities in GaAs/AlGaAs multiple quantum well structures at 1.55 μm

C. J. Hamilton; J. H. Marsh; D. C. Hutchings; J. S. Aitchison; G. T. Kennedy; W. Sibbett

Appl. Phys. Lett. 68, 3078–3080 (1996) https://doi.org/10.1063/1.116428

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Optical switching of coherent VO₂ precipitates formed in sapphire by ion implantation and annealing

Laurence A. Gea; L. A. Boatner

Appl. Phys. Lett. 68, 3081–3083 (1996) https://doi.org/10.1063/1.116429

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ion implantation‐induced strong photosensitivity in high‐purity fused silica: Correlation of index changes with VUV color centers

M. Verhaegen; J. L. Brebner; L. B. Allard; J. Albert

Appl. Phys. Lett. 68, 3084–3086 (1996) https://doi.org/10.1063/1.116430

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Metallic particle sizing on flat surfaces: Application to conducting substrates

F. Moreno; J. M. Saiz; P. J. Valle; F. González

Appl. Phys. Lett. 68, 3087–3089 (1996) https://doi.org/10.1063/1.116431

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes

A. Herrera‐Gómez; P. M. Rousseau; G. Materlik; T. Kendelewicz; J. C. Woicik; P. B. Griffin; J. Plummer; W. E. Spicer

Appl. Phys. Lett. 68, 3090–3092 (1996) https://doi.org/10.1063/1.116432

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Link‐up of 90° domain boundaries with interface dislocations in BaTiO₃/LaAlO₃

Z. R. Dai; Z. L. Wang; X. F. Duan; Jiming Zhang

Appl. Phys. Lett. 68, 3093–3095 (1996) https://doi.org/10.1063/1.116433

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Amorphous films formed by solid‐state reaction in an immiscible Y–Mo system and their structural relaxation

Y. G. Chen; B. X. Liu

Appl. Phys. Lett. 68, 3096–3098 (1996) https://doi.org/10.1063/1.116434

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Bias current dependent resistance peaks in NiFe/Ag giant magnetoresistance multilayers

L. S. Kirschenbaum; C. T. Rogers; P. D. Beale; S. E. Russek; S. C. Sanders

Appl. Phys. Lett. 68, 3099–3101 (1996) https://doi.org/10.1063/1.116435

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Chemical beam epitaxial growth of Si‐doped GaAs and InP by using silicon tetraiodide

Shigekazu Izumi; Norio Hayafuji; Kazuhiko Ito; Kazuhiko Sato; Mutsuyuki Otsubo

Appl. Phys. Lett. 68, 3102–3104 (1996) https://doi.org/10.1063/1.116436

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Band‐edge photoluminescence from pseudomorphic Si_0.96Sn_0.04 alloy

Al‐Sameen T. Khan; Paul R. Berger; Fernando J. Guarin; Subramanian S. Iyer

Appl. Phys. Lett. 68, 3105–3107 (1996) https://doi.org/10.1063/1.116437

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Structural nature of the Si/SiO₂ interface through infrared spectroscopy

R. A. B. Devine

Appl. Phys. Lett. 68, 3108–3110 (1996) https://doi.org/10.1063/1.116438

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Using doping superlattices to study transient‐enhanced diffusion of boron in regrown silicon

K. S. Jones; R. G. Elliman; M. M. Petravić; P. Kringho/j

Appl. Phys. Lett. 68, 3111–3113 (1996) https://doi.org/10.1063/1.116439

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Potential chirp‐free characteristics (negative chirp parameter) in electroabsorption modulation using a wide tensile‐strained quantum well structure

Takayuki Yamanaka; Koichi Wakita; Kiyoyuki Yokoyama

Appl. Phys. Lett. 68, 3114–3116 (1996) https://doi.org/10.1063/1.115795

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electric field screening in a multiple‐quantum‐well optically addressed spatial light modulator

S. L. Smith; L. Hesselink; A. Partovi

Appl. Phys. Lett. 68, 3117–3119 (1996) https://doi.org/10.1063/1.115796

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Exciton diffusion and dissociation in a poly(p‐phenylenevinylene)/C₆₀ heterojunction photovoltaic cell

J. J. M. Halls; K. Pichler; R. H. Friend; S. C. Moratti; A. B. Holmes

Appl. Phys. Lett. 68, 3120–3122 (1996) https://doi.org/10.1063/1.115797

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si

J. M. Gérard; O. Cabrol; B. Sermage

Appl. Phys. Lett. 68, 3123–3125 (1996) https://doi.org/10.1063/1.115798

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of hydrogen on structural relaxation and defect evolution in amorphous silicon

Y. Hiroyama; T. Motooka; R. Suzuki; Y. Hirano; F. Sato

Appl. Phys. Lett. 68, 3126–3128 (1996) https://doi.org/10.1063/1.115799

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications

O. Blum; K. M. Geib; M. J. Hafich; J. F. Klem; C. I. H. Ashby

Appl. Phys. Lett. 68, 3129–3131 (1996) https://doi.org/10.1063/1.115800

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Transport characterization of in‐plane gate devices fabricated by direct epitaxial growth on patterned substrates

M. Dilger; R. J. Haug; K. Eberl; A. Kurtenbach; Y. Kershaw; K. v. Klitzing

Appl. Phys. Lett. 68, 3132–3134 (1996) https://doi.org/10.1063/1.115801

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Change in bulk defect density of hydrogenated amorphous silicon by bias stress in thin film transistor structures

Hyuk‐Ryeol Park; Dong‐Sun Oh; Jin Jang

Appl. Phys. Lett. 68, 3135–3137 (1996) https://doi.org/10.1063/1.115802

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low frequency noise in two‐dimensional metal‐semiconductor field effect transistor

M. E. Levinshtein; S.‐L. Rumyantsev; G. S. Simin; H. Park; W. C. B. Peatman; M. S. Shur

Appl. Phys. Lett. 68, 3138–3140 (1996) https://doi.org/10.1063/1.115803

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation

Masafumi Yamaguchi; Stephen J. Taylor; Sumio Matsuda; Osamu Kawasaki

Appl. Phys. Lett. 68, 3141–3143 (1996) https://doi.org/10.1063/1.115804

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Activation energies of Si donors in GaN

W. Götz; N. M. Johnson; C. Chen; H. Liu; C. Kuo; W. Imler

Appl. Phys. Lett. 68, 3144–3146 (1996) https://doi.org/10.1063/1.115805

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Growth and characterization of bulk InGaN films and quantum wells

S. Keller; B. P. Keller; D. Kapolnek; A. C. Abare; H. Masui; L. A. Coldren; U. K. Mishra; S. P. Den Baars

Appl. Phys. Lett. 68, 3147–3149 (1996) https://doi.org/10.1063/1.115806

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Highly efficient band‐edge emission from InP quantum dots

Olga I. Mićić; Julian Sprague; Zhenghao Lu; Arthur J. Nozik

Appl. Phys. Lett. 68, 3150–3152 (1996) https://doi.org/10.1063/1.115807

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Dielectric function of biaxially strained silicon layer

Hosun Lee; E. D. Jones

Appl. Phys. Lett. 68, 3153–3155 (1996) https://doi.org/10.1063/1.115808

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth

Rajeev Malik; Erdogan Gulari

Appl. Phys. Lett. 68, 3156–3158 (1996) https://doi.org/10.1063/1.115809

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Determination of the activation energy ε₃ for impurity conduction in n‐type 4H–SiC

A. O. Evwaraye; S. R. Smith; W. C. Mitchel; M. D. Roth

Appl. Phys. Lett. 68, 3159–3161 (1996) https://doi.org/10.1063/1.115810

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Size classification of silicon nanocrystals

Renato P. Camata; Harry A. Atwater; Kerry J. Vahala; Richard C. Flagan

Appl. Phys. Lett. 68, 3162–3164 (1996) https://doi.org/10.1063/1.115811

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Single‐crystal Si islands on SiO₂ obtained via excimer‐laser irradiation of a patterned Si film

H. Jin Song; James S. Im

Appl. Phys. Lett. 68, 3165–3167 (1996) https://doi.org/10.1063/1.115812

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Oxidation of GaAs/AlGaAs heterostructures studied by atomic force microscopy in air

F. Reinhardt; B. Dwir; E. Kapon

Appl. Phys. Lett. 68, 3168–3170 (1996) https://doi.org/10.1063/1.115813

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

A pulse‐driven programmable Josephson voltage standard

S. P. Benz; C. A. Hamilton

Appl. Phys. Lett. 68, 3171–3173 (1996) https://doi.org/10.1063/1.115814

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Highly sensitive and wideband optical detection in patterned YBa₂Cu₃O_7−δ thin films

Ken’ichi Tanaka; Yoshiro Arikawa; Matsuo Sekine; Motoichi Ohtsu; Yuichi Harada; Martin Danerud

Appl. Phys. Lett. 68, 3174–3176 (1996) https://doi.org/10.1063/1.115815

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Processing of highly oriented (Hg_1−xRe_x)Ba₂Ca₂Cu₃O_8+δ tape with x∼0.1

R. L. Meng; B. Hickey; Y. Q. Wang; Y. Y. Sun; L. Gao; Y. Y. Xue; C. W. Chu

Appl. Phys. Lett. 68, 3177–3179 (1996) https://doi.org/10.1063/1.115816

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Discrete voltage states in one‐dimensional parallel array of Josephson junctions

Y. Braiman; F. Family; H. G. E. Hentschel

Appl. Phys. Lett. 68, 3180–3182 (1996) https://doi.org/10.1063/1.115817

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Magnetic properties of melt‐textured YBa₂Cu₃O₇ prepared in a solar furnace

S. Reich; T. Godin

Appl. Phys. Lett. 68, 3183–3185 (1996) https://doi.org/10.1063/1.115818

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Large exchange bias and its connection to interface structure in FeF₂–Fe bilayers

J. Nogués; D. Lederman; T. J. Moran; Ivan K. Schuller; K. V. Rao

Appl. Phys. Lett. 68, 3186–3188 (1996) https://doi.org/10.1063/1.115819

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ferromagnetism above room temperature in Mn–Si–C alloy films

M. Gajdzik; C. Sürgers; M. Kelemen; B. Hillebrands; H. v. Löhneysen

Appl. Phys. Lett. 68, 3189–3190 (1996) https://doi.org/10.1063/1.115820

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Magnetic properties and giant magnetoresistance in La_0.67Ca_0.33MnO_x bulk material

X. X. Zhang; R. H. Yu; J. Tejada; G. F. Sun; Y. Xin; K. W. Wong

Appl. Phys. Lett. 68, 3191–3193 (1996) https://doi.org/10.1063/1.115821

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Polymer and polymer/metal interface characterization via Fowler–Nordheim tunneling measurements

I. A. Hümmelgen; L. S. Roman; F. C. Nart; L. O. Péres; E. L. de Sá

Appl. Phys. Lett. 68, 3194–3196 (1996) https://doi.org/10.1063/1.116056

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Comment on ‘‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)]

D. M. Bagnall; K. P. O’Donnell

Appl. Phys. Lett. 68, 3197 (1996) https://doi.org/10.1063/1.116057

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Response to ‘‘Comment on ‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’ ’’ [Appl. Phys. Lett. 68, 3197 (1996)]

M. Asif Khan; S. Krishnankutty; R. A. Skogman; J. N. Kuznia; D. T. Olson; T. George

Appl. Phys. Lett. 68, 3198 (1996) https://doi.org/10.1063/1.116058

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Hard x-ray photoemission study of bulk single-crystalline InGaZnO₄

Goro Shibata, Yunosuke Takahashi, et al.

Membrane phononic crystals for high-

Q_{m}

mechanical defect modes at MHz frequencies in piezoelectric aluminum nitride

Anastasiia Ciers, Laurentius Radit Nindito, et al.

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only