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Volume 68, Issue 18

29 April 1996

All Issues

ISSN 0003-6951

EISSN 1077-3118

Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98 μm) laser diodes

G. Beister; J. Maege; D. Gutsche; G. Erbert; J. Sebastian; K. Vogel; M. Weyers; J. Würfl; O. P. Daga

Appl. Phys. Lett. 68, 2467–2468 (1996) https://doi.org/10.1063/1.115822

Abstract

View articletitled, Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98 μm) laser diodes

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Photorefractive hologram fixing by a 4 K cooldown to the phase transition in K_1−xLi_xTa_1−yNb_yO₃

Aharon J. Agranat; Meir Razvag; Michal Balberg

Appl. Phys. Lett. 68, 2469–2471 (1996) https://doi.org/10.1063/1.115823

Abstract

View articletitled, Photorefractive hologram fixing by a 4 K cooldown to the phase transition in K1−xLixTa1−yNbyO3

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Operation and stability of antiguided flared amplifiers

S. Ramanujan; H. G. Winful

Appl. Phys. Lett. 68, 2472–2474 (1996) https://doi.org/10.1063/1.115824

Abstract

View articletitled, Operation and stability of antiguided flared amplifiers

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Scattering spectroscopy of molecules at nanometer resolution

Y. Martin; F. Zenhausern; H. K. Wickramasinghe

Appl. Phys. Lett. 68, 2475–2477 (1996) https://doi.org/10.1063/1.115825

Abstract

View articletitled, Scattering spectroscopy of molecules at nanometer resolution

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Phase matching of rutile single crystal

Tadanori Hashimoto; Toshinobu Yoko

Appl. Phys. Lett. 68, 2478–2479 (1996) https://doi.org/10.1063/1.115826

Abstract

View articletitled, Phase matching of rutile single crystal

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Photopumped infrared vertical‐cavity surface‐emitting laser

E. Hadji; J. Bleuse; N. Magnea; J. L. Pautrat

Appl. Phys. Lett. 68, 2480–2482 (1996) https://doi.org/10.1063/1.115827

Abstract

View articletitled, Photopumped infrared vertical‐cavity surface‐emitting laser

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Coherent tunable THz‐wave generation from LiNbO₃ with monolithic grating coupler

Kodo Kawase; Manabu Sato; Tetsuo Taniuchi; Hiromasa Ito

Appl. Phys. Lett. 68, 2483–2485 (1996) https://doi.org/10.1063/1.115828

Abstract

View articletitled, Coherent tunable THz‐wave generation from LiNbO3 with monolithic grating coupler

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Dynamics of barrier state electron self‐localization in InGaAs/InGaAsP multiple quantum well lasers

D. Finzi; N. Tessler; V. Mikhaelashvili; G. Eisenstein; A. G. Dentai; S. Chandraskhar; C. H. Joyner

Appl. Phys. Lett. 68, 2486–2488 (1996) https://doi.org/10.1063/1.115829

Abstract

View articletitled, Dynamics of barrier state electron self‐localization in InGaAs/InGaAsP multiple quantum well lasers

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Validation of a scattering state model for liquid crystal polymer composites

D. Bosc; C. Trubert; B. Vinouze; M. Guilbert

Appl. Phys. Lett. 68, 2489–2490 (1996) https://doi.org/10.1063/1.115830

Abstract

View articletitled, Validation of a scattering state model for liquid crystal polymer composites

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Pulsed laser‐induced desorption and optical imaging on a nanometer scale with scanning near‐field microscopy using chemically etched fiber tips

Dieter Zeisel; Stefan Nettesheim; Bertrand Dutoit; Renato Zenobi

Appl. Phys. Lett. 68, 2491–2492 (1996) https://doi.org/10.1063/1.115831

Abstract

View articletitled, Pulsed laser‐induced desorption and optical imaging on a nanometer scale with scanning near‐field microscopy using chemically etched fiber tips

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Second‐harmonic generation in a LiTaO₃ waveguide domain‐inverted by proton exchange and masked heat treatment

Sang‐Yun Yi; Sang‐Yung Shin; Yong‐Sung Jin; Yung‐Sung Son

Appl. Phys. Lett. 68, 2493–2495 (1996) https://doi.org/10.1063/1.115832

Abstract

View articletitled, Second‐harmonic generation in a LiTaO3 waveguide domain‐inverted by proton exchange and masked heat treatment

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Reduction of relative intensity noise of the output field of semiconductor lasers due to propagation in dispersive optical fiber

W. K. Marshall; J. Paslaski; A. Yariv

Appl. Phys. Lett. 68, 2496–2498 (1996) https://doi.org/10.1063/1.115833

Abstract

View articletitled, Reduction of relative intensity noise of the output field of semiconductor lasers due to propagation in dispersive optical fiber

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Rapid two‐dimensional self‐consistent simulation of inductively coupled plasma and comparison with experimental data

Richard S. Wise; Dimitris P. Lymberopoulos; Demetre J. Economou

Appl. Phys. Lett. 68, 2499–2501 (1996) https://doi.org/10.1063/1.115834

Abstract

View articletitled, Rapid two‐dimensional self‐consistent simulation of inductively coupled plasma and comparison with experimental data

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Epitaxial growth of metal phthalocyanines on hydrogen terminated vicinal surfaces of Si(111)

Toshihiro Shimada; Akira Suzuki; Takafumi Sakurada; Atsushi Koma

Appl. Phys. Lett. 68, 2502–2504 (1996) https://doi.org/10.1063/1.115835

Abstract

View articletitled, Epitaxial growth of metal phthalocyanines on hydrogen terminated vicinal surfaces of Si(111)

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Effect of LaNiO₃/Pt double layers on the characteristics of (Pb_xLa_1−x)(Zr_yTi_1−y)O₃ thin films

Tzu‐Feng Tseng; Kuo‐Shung Liu; Tai‐Bar Wu; I.‐Nan Lin

Appl. Phys. Lett. 68, 2505–2510 (1996) https://doi.org/10.1063/1.115836

Abstract

View articletitled, Effect of LaNiO3/Pt double layers on the characteristics of (PbxLa1−x)(ZryTi1−y)O3 thin films

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Tantalum deposition on and reaction with the hydrogen terminated diamond (100) surface studied by Auger electron and electron energy loss spectroscopy

M. Pitter; M. B. Hugenschmidt; R. J. Behm

Appl. Phys. Lett. 68, 2508–2510 (1996) https://doi.org/10.1063/1.115837

Abstract

View articletitled, Tantalum deposition on and reaction with the hydrogen terminated diamond (100) surface studied by Auger electron and electron energy loss spectroscopy

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The role of quantum‐confined excitons vs defects in the visible luminescence of SiO₂ films containing Ge nanocrystals

K. S. Min; K. V. Shcheglov; C. M. Yang; Harry A. Atwater; M. L. Brongersma; A. Polman

Appl. Phys. Lett. 68, 2511–2513 (1996) https://doi.org/10.1063/1.115838

Abstract

View articletitled, The role of quantum‐confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals

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Initial stage of layer‐by‐layer sputtering of Si(111) surfaces studied by scanning reflection electron microscopy

Heiji Watanabe; Masakazu Ichikawa

Appl. Phys. Lett. 68, 2514–2516 (1996) https://doi.org/10.1063/1.115839

Abstract

View articletitled, Initial stage of layer‐by‐layer sputtering of Si(111) surfaces studied by scanning reflection electron microscopy

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Neutron‐capture‐induced radiation treatment of polymeric materials

Donald J. Rej; Mark M. Pickrell; Debra A. Wrobleski

Appl. Phys. Lett. 68, 2517–2519 (1996) https://doi.org/10.1063/1.115840

Abstract

View articletitled, Neutron‐capture‐induced radiation treatment of polymeric materials

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Synthesis of 15R polytype of diamond in oxy‐acetylene flame grown diamond thin films

R. Kapil; B. R. Mehta; V. D. Vankar

Appl. Phys. Lett. 68, 2520–2522 (1996) https://doi.org/10.1063/1.115841

Abstract

View articletitled, Synthesis of 15R polytype of diamond in oxy‐acetylene flame grown diamond thin films

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Growth of highly textured LiNbO₃ thin film on Si with MgO buffer layer through the sol‐gel process

Jong‐Gul Yoon; Kun Kim

Appl. Phys. Lett. 68, 2523–2525 (1996) https://doi.org/10.1063/1.115842

Abstract

View articletitled, Growth of highly textured LiNbO3 thin film on Si with MgO buffer layer through the sol‐gel process

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Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

J. W. Lyding; K. Hess; I. C. Kizilyalli

Appl. Phys. Lett. 68, 2526–2528 (1996) https://doi.org/10.1063/1.116172

Abstract

View articletitled, Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

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Nitrogen containing hydrogenated amorphous carbon for thin‐film field emission cathodes

Gehan A. J. Amaratunga; S. R. P. Silva

Appl. Phys. Lett. 68, 2529–2531 (1996) https://doi.org/10.1063/1.116173

Abstract

View articletitled, Nitrogen containing hydrogenated amorphous carbon for thin‐film field emission cathodes

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Current conduction in quantum well infrared photodetectors under low bias operation

Daniel C. Wang; Gijs Bosman; Sheng S. Li

Appl. Phys. Lett. 68, 2532–2534 (1996) https://doi.org/10.1063/1.116174

Abstract

View articletitled, Current conduction in quantum well infrared photodetectors under low bias operation

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Separation of partition noise from generation‐recombination noise in a three‐terminal quantum well infrared photodetector

C. J. Chen; Ç. Kurdak; D. C. Tsui; K. K. Choi

Appl. Phys. Lett. 68, 2535–2537 (1996) https://doi.org/10.1063/1.116175

Abstract

View articletitled, Separation of partition noise from generation‐recombination noise in a three‐terminal quantum well infrared photodetector

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In‐plane‐gate transistors on nonepitaxial silicon directly written by focused‐ion‐beam implantation

C. Crell; K. Wieczorek; H.‐U. Schreiber; A. D. Wieck

Appl. Phys. Lett. 68, 2538–2540 (1996) https://doi.org/10.1063/1.116176

Abstract

View articletitled, In‐plane‐gate transistors on nonepitaxial silicon directly written by focused‐ion‐beam implantation

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Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

G. Martin; A. Botchkarev; A. Rockett; H. Morkoç

Appl. Phys. Lett. 68, 2541–2543 (1996) https://doi.org/10.1063/1.116177

Abstract

View articletitled, Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

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Ultrafast dynamics of nonlinear absorption in low‐temperature‐grown GaAs

S. D. Benjamin; H. S. Loka; A. Othonos; P. W. E. Smith

Appl. Phys. Lett. 68, 2544–2546 (1996) https://doi.org/10.1063/1.116178

Abstract

View articletitled, Ultrafast dynamics of nonlinear absorption in low‐temperature‐grown GaAs

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Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

C. Wetzel; E. E. Haller; H. Amano; I. Akasaki

Appl. Phys. Lett. 68, 2547–2549 (1996) https://doi.org/10.1063/1.116179

Abstract

View articletitled, Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

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Influence of the semi‐insulating GaAs Schottky pad on the Schottky barrier in the active layer

J. Wu; Z. G. Wang; L. Y. Lin; C. B. Han; M. Zhang; S. W. Bai

Appl. Phys. Lett. 68, 2550–2552 (1996) https://doi.org/10.1063/1.116180

Abstract

View articletitled, Influence of the semi‐insulating GaAs Schottky pad on the Schottky barrier in the active layer

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Infrared light emission from semiconductor double wells

W. Pötz

Appl. Phys. Lett. 68, 2553–2555 (1996) https://doi.org/10.1063/1.116181

Abstract

View articletitled, Infrared light emission from semiconductor double wells

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Strongly localized excitons in gallium nitride

C. Wetzel; S. Fischer; J. Krüger; E. E. Haller; R. J. Molnar; T. D. Moustakas; E. N. Mokhov; P. G. Baranov

Appl. Phys. Lett. 68, 2556–2558 (1996) https://doi.org/10.1063/1.116182

Abstract

View articletitled, Strongly localized excitons in gallium nitride

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Magnetically tunable YBaCuO microstrip resonators and bandpass filters

A. Trotel; M. Pyée; B. Lavigne; D. Chambonnet; P. Lederer

Appl. Phys. Lett. 68, 2559–2561 (1996) https://doi.org/10.1063/1.116183

Abstract

View articletitled, Magnetically tunable YBaCuO microstrip resonators and bandpass filters

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Tunneling through grain boundaries of YBa₂Cu₃O₇ step‐edge junctions

H. R. Yi; D. Winkler; T. Claeson

Appl. Phys. Lett. 68, 2562–2564 (1996) https://doi.org/10.1063/1.116184

Abstract

View articletitled, Tunneling through grain boundaries of YBa2Cu3O7 step‐edge junctions

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Growth of HgBa₂Ca₂Cu₃O_8+δ thin films on LaAlO₃ substrates using fast temperature ramping Hg‐vapor annealing

S. H. Yun; J. Z. Wu; S. C. Tidrow; D. W. Eckart

Appl. Phys. Lett. 68, 2565–2567 (1996) https://doi.org/10.1063/1.116185

Abstract

View articletitled, Growth of HgBa2Ca2Cu3O8+δ thin films on LaAlO3 substrates using fast temperature ramping Hg‐vapor annealing

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High‐precision laser cutting of high‐temperature superconductors

Th. Schuster; H. Kuhn; A. Raiber; T. Abeln; F. Dausinger; H. Hügel; M. Kläser; G. Müller‐Vogt

Appl. Phys. Lett. 68, 2568–2570 (1996) https://doi.org/10.1063/1.116186

Abstract

View articletitled, High‐precision laser cutting of high‐temperature superconductors

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Ultra‐smooth, highly ordered, thin films of La_0.67Ca_0.33MnO_3±d

V. A. Vas’ko; C. A. Nordman; P. A. Kraus; V. S. Achutharaman; A. R. Ruosi; A. M. Goldman

Appl. Phys. Lett. 68, 2571–2573 (1996) https://doi.org/10.1063/1.116187

Abstract

View articletitled, Ultra‐smooth, highly ordered, thin films of La0.67Ca0.33MnO3±d

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An approach to electrical studies of single nanocrystals

David L. Klein; Paul L. McEuen; Janet E. Bowen Katari; Richard Roth; A. Paul Alivisatos

Appl. Phys. Lett. 68, 2574–2576 (1996) https://doi.org/10.1063/1.116188

Abstract

View articletitled, An approach to electrical studies of single nanocrystals

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Fatigue of piezoelectric properties in Pb(Zr,Ti)O₃ films

A. L. Kholkin; E. L. Colla; A. K. Tagantsev; D. V. Taylor; N. Setter

Appl. Phys. Lett. 68, 2577–2579 (1996) https://doi.org/10.1063/1.116189

Abstract

View articletitled, Fatigue of piezoelectric properties in Pb(Zr,Ti)O3 films

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Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition

Y. H. Chang; J. S. Chun; J. E. Oh; S. J. Won; S. H. Paek; H. D. Lee; S. I. Lee; J. S. Choi; J. G. Lee

Appl. Phys. Lett. 68, 2580–2582 (1996) https://doi.org/10.1063/1.116190

Abstract

View articletitled, Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition

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Two‐bandpass fiber‐optic radiometry for monitoring the temperature of photoresist during dry processing

Yair Dankner; O. Eyal; A. Katzir

Appl. Phys. Lett. 68, 2583–2585 (1996) https://doi.org/10.1063/1.116191

Abstract

View articletitled, Two‐bandpass fiber‐optic radiometry for monitoring the temperature of photoresist during dry processing

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Nanolithographic templates from diblock copolymer thin films

P. Mansky; C. K. Harrison; P. M. Chaikin; R. A. Register; N. Yao

Appl. Phys. Lett. 68, 2586–2588 (1996) https://doi.org/10.1063/1.116192

Abstract

View articletitled, Nanolithographic templates from diblock copolymer thin films

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Comment on ‘‘Temporal response of a high‐c superconducting field‐effect transistor’’ [Appl. Phys. Lett. 67, 2076 (1995)]

N. Chandrasekhar; Oriol T. Valls; A. M. Goldman

Appl. Phys. Lett. 68, 2589 (1996) https://doi.org/10.1063/1.116193

View articletitled, Comment on ‘‘Temporal response of a high‐c superconducting field‐effect transistor’’ [Appl. Phys. Lett. 67, 2076 (1995)]

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Response to ‘‘Comment on ‘Temporal response of a high‐c superconducting field effect transistor’ ’’ [Appl. Phys. Lett. 68, 2589 (1996)]

R. Schneider; R. Auer

Appl. Phys. Lett. 68, 2590 (1996) https://doi.org/10.1063/1.116194

View articletitled, Response to ‘‘Comment on ‘Temporal response of a high‐c superconducting field effect transistor’ ’’ [Appl. Phys. Lett. 68, 2589 (1996)]

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Erratum: ‘‘Nitrogen diffusion mechanism in the R₂Fe₁₇ lattice’’ [Appl. Phys. Lett. 67, 208 (1995)]

Y. D. Zhang; J. I. Budnick; W. A. Hines; D. P. Yang

Appl. Phys. Lett. 68, 2591 (1996) https://doi.org/10.1063/1.116791

View articletitled, Erratum: ‘‘Nitrogen diffusion mechanism in the R2Fe17 lattice’’ [Appl. Phys. Lett. 67, 208 (1995)]

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Erratum: ‘‘Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells’’ [Appl. Phys. Lett. 67, 3432 (1995)]

W. Z. Shen; S. C. Shen; W. G. Tang; Y. Zhao; A. Z. Li; W. Z. Shen; S. C. Shen; W. G. Tang; Y. Zhao; A. Z. Li

Appl. Phys. Lett. 68, 2591 (1996) https://doi.org/10.1063/1.116792

View articletitled, Erratum: ‘‘Optical investigation of quaternary GalnAsSb/AlGaAsSb strained multiple quantum wells’’ [Appl. Phys. Lett. 67, 3432 (1995)]

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