Skip Nav Destination

Issues

Select Decade

Select Year

Issue

Volume 68, Issue 17

22 April 1996

All Issues

ISSN 0003-6951

EISSN 1077-3118

Voltage‐tunable‐color multilayer organic light emitting diode

J. Kalinowski; P. Di Marco; M. Cocchi; V. Fattori; N. Camaioni; J. Duff

Appl. Phys. Lett. 68, 2317–2319 (1996) https://doi.org/10.1063/1.115843

Abstract

View articletitled, Voltage‐tunable‐color multilayer organic light emitting diode

Open the PDF for in another window

Resistless, area‐selective ultrashallow P⁺/N junction fabrication using projection gas immersion laser doping

K.‐Josef Kramer; Somit Talwar; Isabella T. Lewis; John E. Davison; Kenneth A. Williams; Keith A. Benton; Kurt H. Weiner

Appl. Phys. Lett. 68, 2320–2322 (1996) https://doi.org/10.1063/1.115844

Abstract

View articletitled, Resistless, area‐selective ultrashallow P+/N junction fabrication using projection gas immersion laser doping

Open the PDF for in another window

Pulsed anodic etching: An effective method of preparing light‐emitting porous silicon

Xiao‐yuan Hou; Hong‐lei Fan; Lei Xu; Fu‐long Zhang; Min‐qian Li; Ming‐ren Yu; Xun Wang

Appl. Phys. Lett. 68, 2323–2325 (1996) https://doi.org/10.1063/1.115845

Abstract

View articletitled, Pulsed anodic etching: An effective method of preparing light‐emitting porous silicon

Open the PDF for in another window

Waveguiding in (quantum) wire structures: Impact on the polarization characteristics and the slope of the optical gain

G. Lehr; V. Härle; F. Scholz; H. Schweizer

Appl. Phys. Lett. 68, 2326–2328 (1996) https://doi.org/10.1063/1.115846

Abstract

View articletitled, Waveguiding in (quantum) wire structures: Impact on the polarization characteristics and the slope of the optical gain

Open the PDF for in another window

Vanishing optical isolation barrier in double ion‐implanted lithium niobate waveguide

S. S. Sarkisov; E. K. Williams; D. Ila; P. Venkateswarlu; D. B. Poker

Appl. Phys. Lett. 68, 2329–2331 (1996) https://doi.org/10.1063/1.115847

Abstract

View articletitled, Vanishing optical isolation barrier in double ion‐implanted lithium niobate waveguide

Open the PDF for in another window

ZnSe‐based birefringent waveguide as Pockels retarder in the blue‐green spectral range

H. Babucke; P. Thiele; T. Prasse; M. Rabe; F. Henneberger

Appl. Phys. Lett. 68, 2332–2334 (1996) https://doi.org/10.1063/1.115848

Abstract

View articletitled, ZnSe‐based birefringent waveguide as Pockels retarder in the blue‐green spectral range

Open the PDF for in another window

New method for in situ control of Bragg reflector fabrication

S. Callard; A. Gagnaire; J. Joseph

Appl. Phys. Lett. 68, 2335–2336 (1996) https://doi.org/10.1063/1.115849

Abstract

View articletitled, New method for in situ control of Bragg reflector fabrication

Open the PDF for in another window

Near‐infrared contact mode collection near‐field optical and normal force microscopy of modulated multiple quantum well lasers

U. Ben‐Ami; N. Tessler; N. Ben‐Ami; R. Nagar; G. Fish; K. Lieberman; G. Eisenstein; A. Lewis; J. M. Nielsen; A. Mo/eller‐Larsen

Appl. Phys. Lett. 68, 2337–2339 (1996) https://doi.org/10.1063/1.115850

Abstract

View articletitled, Near‐infrared contact mode collection near‐field optical and normal force microscopy of modulated multiple quantum well lasers

Open the PDF for in another window

Role of heterointerface on enhancement of no‐phonon luminescence in Si‐based neighboring confinement structure

N. Usami; Y. Shiraki; S. Fukatsu

Appl. Phys. Lett. 68, 2340–2342 (1996) https://doi.org/10.1063/1.115851

Abstract

View articletitled, Role of heterointerface on enhancement of no‐phonon luminescence in Si‐based neighboring confinement structure

Open the PDF for in another window

Heat diffusivity of La_1−xCa_xMnO₃ epitaxial layers

J. Liebe; E. Kraus; L. Haupt; P. Mandal; K. Bärner; R. v. Helmolt

Appl. Phys. Lett. 68, 2343–2345 (1996) https://doi.org/10.1063/1.115852

Abstract

View articletitled, Heat diffusivity of La1−xCaxMnO3 epitaxial layers

Open the PDF for in another window

Polyquinoxaline as an excellent electron injecting material for electroluminescent device

Takashi Fukuda; Takaki Kanbara; Takakazu Yamamoto; Ken Ishikawa; Hideo Takezoe; Atsuo Fukuda

Appl. Phys. Lett. 68, 2346–2348 (1996) https://doi.org/10.1063/1.115853

Abstract

View articletitled, Polyquinoxaline as an excellent electron injecting material for electroluminescent device

Open the PDF for in another window

Surface modification of silicon (111) by annealing at high temperature in hydrogen

Lei Zhong; Ryuji Takeda; Koji Izunome; Yoshiaki Matsushita; Yoshiro Aiba; Junichi Matsushita; Jun Yoshikawa; Kenro Hayashi; Hiroshi Shirai; Hiroyoki Saito

Appl. Phys. Lett. 68, 2349–2351 (1996) https://doi.org/10.1063/1.115854

Abstract

View articletitled, Surface modification of silicon (111) by annealing at high temperature in hydrogen

Open the PDF for in another window

Observation of Si in SiC composite fibers: A micro‐Raman investigation

Jeongyong Kim; Spirit Tlali; Howard E. Jackson; James E. Webb; Raj N. Singh

Appl. Phys. Lett. 68, 2352–2354 (1996) https://doi.org/10.1063/1.115855

Abstract

View articletitled, Observation of Si in SiC composite fibers: A micro‐Raman investigation

Open the PDF for in another window

Measurement of index of refraction of In_xAl_1−xAs epitaxial layer using in situ laser reflectometry

Jong‐Hyeob Baek; Bun Lee; Sung Woo Choi; Jin Hong Lee; El‐Hang Lee

Appl. Phys. Lett. 68, 2355–2357 (1996) https://doi.org/10.1063/1.115856

Abstract

View articletitled, Measurement of index of refraction of InxAl1−xAs epitaxial layer using in situ laser reflectometry

Open the PDF for in another window

Formation and observation of 50 nm polarized domains in PbZr_1−xTi_xO₃ thin film using scanning probe microscope

T. Hidaka; T. Maruyama; M. Saitoh; N. Mikoshiba; M. Shimizu; T. Shiosaki; L. A. Wills; R. Hiskes; S. A. Dicarolis; Jun Amano

Appl. Phys. Lett. 68, 2358–2359 (1996) https://doi.org/10.1063/1.115857

Abstract

View articletitled, Formation and observation of 50 nm polarized domains in PbZr1−xTixO3 thin film using scanning probe microscope

Open the PDF for in another window

Biaxial alignment of TiN films prepared by ion beam assisted deposition

J. W. Gerlach; U. Preckwinkel; H. Wengenmair; T. Kraus; B. Rauschenbach

Appl. Phys. Lett. 68, 2360–2362 (1996) https://doi.org/10.1063/1.115858

Abstract

View articletitled, Biaxial alignment of TiN films prepared by ion beam assisted deposition

Open the PDF for in another window

Quasi‐one‐dimensional CaF₂ islands formed on Si(001) by molecular beam epitaxy

D. Loretto; F. M. Ross; C. A. Lucas

Appl. Phys. Lett. 68, 2363–2365 (1996) https://doi.org/10.1063/1.115859

Abstract

View articletitled, Quasi‐one‐dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy

Open the PDF for in another window

Dry oxidation mechanisms of thin dielectric films formed under N₂O using isotopic tracing methods

J.‐J. Ganem; S. Rigo; I. Trimaille; I. J. R. Baumvol; F. C. Stedile

Appl. Phys. Lett. 68, 2366–2368 (1996) https://doi.org/10.1063/1.116135

Abstract

View articletitled, Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods

Open the PDF for in another window

Local field in ferroelectrics: Direct measurements with an optical probe

L. M. Blinov; K. A. Verkhovskaya; S. P. Palto; A. V. Sorokin

Appl. Phys. Lett. 68, 2369–2371 (1996) https://doi.org/10.1063/1.116136

Abstract

View articletitled, Local field in ferroelectrics: Direct measurements with an optical probe

Open the PDF for in another window

The effect of stress on the resistivity of submicron aluminum lines

N. L. Beverly; G. B. Alers; J. A. Prybyla

Appl. Phys. Lett. 68, 2372–2374 (1996) https://doi.org/10.1063/1.116137

Abstract

View articletitled, The effect of stress on the resistivity of submicron aluminum lines

Open the PDF for in another window

Formation of deep thermal donors in heat‐treated Czochralski silicon

V. V. Emtsev; G. A. Oganesyan; K. Schmalz

Appl. Phys. Lett. 68, 2375–2377 (1996) https://doi.org/10.1063/1.116138

Abstract

View articletitled, Formation of deep thermal donors in heat‐treated Czochralski silicon

Open the PDF for in another window

Cathodoluminescence and writing of optical patterns on porous silicon by scanning electron microscopy

A. Bruska; A. Chernook; St. Schulze; M. Hietschold

Appl. Phys. Lett. 68, 2378–2379 (1996) https://doi.org/10.1063/1.116139

Abstract

View articletitled, Cathodoluminescence and writing of optical patterns on porous silicon by scanning electron microscopy

Open the PDF for in another window

Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon

Toshihiro Kamei; Nobuhiro Hata; Akihisa Matsuda; Toyoshi Uchiyama; Shigeru Amano; Kazuyoshi Tsukamoto; Yoshiaki Yoshioka; Takashi Hirao

Appl. Phys. Lett. 68, 2380–2382 (1996) https://doi.org/10.1063/1.116140

Abstract

View articletitled, Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon

Open the PDF for in another window

Polarization effect in light emitting diodes with ordered GaInP active layers

E. Greger; K. H. Gulden; P. Riel; H. P. Schweizer; M. Moser; G. Schmiedel; P. Kiesel; G. H. Döhler

Appl. Phys. Lett. 68, 2383–2385 (1996) https://doi.org/10.1063/1.116141

Abstract

View articletitled, Polarization effect in light emitting diodes with ordered GaInP active layers

Open the PDF for in another window

Observation of temperature‐insensitive emission wavelength in GaInAs strained multiple‐quantum‐wire heterostructures

D. E. Wohlert; S. T. Chou; A. C. Chen; K. Y. Cheng; K. C. Hsieh

Appl. Phys. Lett. 68, 2386–2388 (1996) https://doi.org/10.1063/1.116142

Abstract

View articletitled, Observation of temperature‐insensitive emission wavelength in GaInAs strained multiple‐quantum‐wire heterostructures

Open the PDF for in another window

Ion‐beam synthesis and stability of GaAs nanocrystals in silicon

C. W. White; J. D. Budai; J. G. Zhu; S. P. Withrow; M. J. Aziz

Appl. Phys. Lett. 68, 2389–2391 (1996) https://doi.org/10.1063/1.116143

Abstract

View articletitled, Ion‐beam synthesis and stability of GaAs nanocrystals in silicon

Open the PDF for in another window

Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy

J. W. Huang; T. F. Kuech; Hongqiang Lu; Ishwara Bhat

Appl. Phys. Lett. 68, 2392–2394 (1996) https://doi.org/10.1063/1.116144

Abstract

View articletitled, Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy

Open the PDF for in another window

Simulation of cluster evaporation and transient enhanced diffusion in silicon

C. S. Rafferty; G. H. Gilmer; M. Jaraiz; D. Eaglesham; H.‐J. Gossmann

Appl. Phys. Lett. 68, 2395–2397 (1996) https://doi.org/10.1063/1.116145

Abstract

View articletitled, Simulation of cluster evaporation and transient enhanced diffusion in silicon

Open the PDF for in another window

Strain relaxation mechanism of 250 °C grown Si_0.33Ge_0.67/Si(001) heterostructure

Seung‐Chang Lee

Appl. Phys. Lett. 68, 2398–2400 (1996) https://doi.org/10.1063/1.116146

Abstract

View articletitled, Strain relaxation mechanism of 250 °C grown Si0.33Ge0.67/Si(001) heterostructure

Open the PDF for in another window

Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing

H. H. Tan; J. S. Williams; C. Jagadish; P. T. Burke; M. Gal

Appl. Phys. Lett. 68, 2401–2403 (1996) https://doi.org/10.1063/1.116147

Abstract

View articletitled, Large energy shifts in GaAs‐AlGaAs quantum wells by proton irradiation‐induced intermixing

Open the PDF for in another window

Resonant Raman scattering in hexagonal GaN

D. Behr; J. Wagner; J. Schneider; H. Amano; I. Akasaki

Appl. Phys. Lett. 68, 2404–2406 (1996) https://doi.org/10.1063/1.116148

Abstract

View articletitled, Resonant Raman scattering in hexagonal GaN

Open the PDF for in another window

Synthesis and characterization of heteroepitaxial diamond‐structured Ge_1−xC_x (x=1.5–5.0%) alloys using chemical vapor deposition

M. Todd; J. Kouvetakis; David J. Smith

Appl. Phys. Lett. 68, 2407–2409 (1996) https://doi.org/10.1063/1.116149

Abstract

View articletitled, Synthesis and characterization of heteroepitaxial diamond‐structured Ge1−xCx (x=1.5–5.0%) alloys using chemical vapor deposition

Open the PDF for in another window

Room‐temperature, short‐wavelength (400–500 nm) photoluminescence from silicon‐implanted silicon dioxide films

W. Skorupa; R. A. Yankov; I. E. Tyschenko; H. Fröb; T. Böhme; K. Leo

Appl. Phys. Lett. 68, 2410–2412 (1996) https://doi.org/10.1063/1.116150

Abstract

View articletitled, Room‐temperature, short‐wavelength (400–500 nm) photoluminescence from silicon‐implanted silicon dioxide films

Open the PDF for in another window

Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

L. H. Kuo; K. Kimura; T. Yasuda; S. Miwa; C. G. Jin; K. Tanaka; T. Yao

Appl. Phys. Lett. 68, 2413–2415 (1996) https://doi.org/10.1063/1.116151

Abstract

View articletitled, Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

Open the PDF for in another window

Charge‐free etching process using positive and negative ions in pulse‐time modulated electron cyclotron resonance plasma with low‐frequency bias

Hiroto Ohtake; Seiji Samukawa

Appl. Phys. Lett. 68, 2416–2417 (1996) https://doi.org/10.1063/1.116152

Abstract

View articletitled, Charge‐free etching process using positive and negative ions in pulse‐time modulated electron cyclotron resonance plasma with low‐frequency bias

Open the PDF for in another window

Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy

Edith D. Bourret‐Courchesne

Appl. Phys. Lett. 68, 2418–2420 (1996) https://doi.org/10.1063/1.116153

Abstract

View articletitled, Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy

Open the PDF for in another window

Role of codopants in the luminescent output from Si:Er

Frederick G. Anderson

Appl. Phys. Lett. 68, 2421–2423 (1996) https://doi.org/10.1063/1.116154

Abstract

View articletitled, Role of codopants in the luminescent output from Si:Er

Open the PDF for in another window

Shallow donor neutralization in CdTe:In by atomic hydrogen

Suma Gurumurthy; H. L. Bhat; B. Sundersheshu; R. K. Bagai; Vikram Kumar

Appl. Phys. Lett. 68, 2424–2426 (1996) https://doi.org/10.1063/1.116155

Abstract

View articletitled, Shallow donor neutralization in CdTe:In by atomic hydrogen

Open the PDF for in another window

Direct scanning tunneling microscopy observation of non‐unit‐cell growth of YBa₂Cu₃O_7−δ thin films

T. Haage; Q. D. Jiang; M. Cardona; H.‐U. Habermeier; J. Zegenhagen

Appl. Phys. Lett. 68, 2427–2429 (1996) https://doi.org/10.1063/1.116156

Abstract

View articletitled, Direct scanning tunneling microscopy observation of non‐unit‐cell growth of YBa2Cu3O7−δ thin films

Open the PDF for in another window

Molecular beam epitaxy growth of a layered cuprate having a multiple fluorite‐type block for use in trilayer junctions

Sumio Ikegawa; Yuichi Motoi

Appl. Phys. Lett. 68, 2430–2432 (1996) https://doi.org/10.1063/1.116157

Abstract

View articletitled, Molecular beam epitaxy growth of a layered cuprate having a multiple fluorite‐type block for use in trilayer junctions

Open the PDF for in another window

The intrinsic determinants of the critical current in SIS′ and SIS high‐T_c Josephson junctions

R. S. Gonnelli; D. Puttero; G. A. Ummarino

Appl. Phys. Lett. 68, 2433–2435 (1996) https://doi.org/10.1063/1.116158

Abstract

View articletitled, The intrinsic determinants of the critical current in SIS′ and SIS high‐Tc Josephson junctions

Open the PDF for in another window

The shape of a nanoprobe determined by imaging spherical clusters

M. Sumetskii; A. A. Kornyshev; U. Stimming

Appl. Phys. Lett. 68, 2436–2438 (1996) https://doi.org/10.1063/1.116159

Abstract

View articletitled, The shape of a nanoprobe determined by imaging spherical clusters

Open the PDF for in another window

Transparent zinc oxide films prepared by electrochemical reaction

Masanobu Izaki; Takashi Omi

Appl. Phys. Lett. 68, 2439–2440 (1996) https://doi.org/10.1063/1.116160

Abstract

View articletitled, Transparent zinc oxide films prepared by electrochemical reaction

Open the PDF for in another window

Study of a novel C₆₀−2,6‐bis(2,2‐bicyanovinyl)pyridine complex thin film

M. Ouyang; K. Z. Wang; H. X. Zhang; Z. Q. Xue; C. H. Huang; D. Qiang

Appl. Phys. Lett. 68, 2441–2443 (1996) https://doi.org/10.1063/1.116161

Abstract

View articletitled, Study of a novel C60−2,6‐bis(2,2‐bicyanovinyl)pyridine complex thin film

Open the PDF for in another window

Analysis of capacitance‐voltage characteristics for two‐dimensional multi‐conductor in liquid crystal displays

Kun‐Wei Lin; Han‐Ping D. Shieh; Feng‐Cheng D. Su

Appl. Phys. Lett. 68, 2444–2446 (1996) https://doi.org/10.1063/1.116162

Abstract

View articletitled, Analysis of capacitance‐voltage characteristics for two‐dimensional multi‐conductor in liquid crystal displays

Open the PDF for in another window

Conductive thin films of bis(ethylenedithio)tetrathiafulvalene salt fabricated by a successive dry‐wet process

Yasuhiro F. Miura; Satomi Ohnishi; Masahiko Hara; Hiroyuki Sasabe; Wolfgang Knoll

Appl. Phys. Lett. 68, 2447–2449 (1996) https://doi.org/10.1063/1.116163

Abstract

View articletitled, Conductive thin films of bis(ethylenedithio)tetrathiafulvalene salt fabricated by a successive dry‐wet process

Open the PDF for in another window

Electron‐emission‐enhanced diamond nucleation on Si by hot filament chemical vapor deposition

Qijin Chen; Zhangda Lin

Appl. Phys. Lett. 68, 2450–2452 (1996) https://doi.org/10.1063/1.116164

Abstract

View articletitled, Electron‐emission‐enhanced diamond nucleation on Si by hot filament chemical vapor deposition

Open the PDF for in another window

Comment on ‘‘Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes’’ [Appl. Phys. Lett. 65, 2725 (1994)]

R. K. Bhan; V. Dhar; P. K. Chaudhury; P. K. Basu; A. V. R. Warrier

Appl. Phys. Lett. 68, 2453–2454 (1996) https://doi.org/10.1063/1.116165

View articletitled, Comment on ‘‘Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes’’ [Appl. Phys. Lett. 65, 2725 (1994)]

Open the PDF for in another window

Response to ‘‘Comment on ‘Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes’ ’’ [Appl. Phys. Lett. 68, 2453 (1996)]

G. Bahir; V. Ariel; V. Garber; D. Rosenfeld; A. Sher

Appl. Phys. Lett. 68, 2455 (1996) https://doi.org/10.1063/1.116318

View articletitled, Response to ‘‘Comment on ‘Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes’ ’’ [Appl. Phys. Lett. 68, 2453 (1996)]

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials

Christina M. Rost, Alessandro R. Mazza, et al.

Topological and chiral matter—Physics and applications

Maia G. Vergniory, Takeshi Kondo, et al.

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only