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Volume 68, Issue 13

25 March 1996

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ISSN 0003-6951

EISSN 1077-3118

Continuous wave operation of midinfrared (7.4–8.6 μm) quantum cascade lasers up to 110 K temperature

Carlo Sirtori; Jérôme Faist; Federico Capasso; Deborah L. Sivco; Albert L. Hutchinson; S. N. George Chu; Alfred Y. Cho

Appl. Phys. Lett. 68, 1745–1747 (1996) https://doi.org/10.1063/1.116654

Abstract

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Birefringence, Pockels, and Kerr effects in photorefractive polymers

B. Kippelen; Sandalphon; K. Meerholz; N. Peyghambarian

Appl. Phys. Lett. 68, 1748–1750 (1996) https://doi.org/10.1063/1.116653

Abstract

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Study of anomalous peak in the dielectric spectra of CdTe thin films using photoellipsometry

P. D. Paulson; V. Dutta

Appl. Phys. Lett. 68, 1751–1753 (1996) https://doi.org/10.1063/1.116655

Abstract

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Second‐harmonic generation of blue light from [112]‐oriented III‐V antiresonant waveguide heterostructures

P. A. Ramos; E. Towe

Appl. Phys. Lett. 68, 1754–1756 (1996) https://doi.org/10.1063/1.116656

Abstract

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Estimation of scattering losses in dielectrically apertured vertical cavity lasers

E. R. Hegblom; D. I. Babic; B. J. Thibeault; L. A. Coldren

Appl. Phys. Lett. 68, 1757–1759 (1996) https://doi.org/10.1063/1.116657

Abstract

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Quasi‐phase‐matched second harmonic generation in a polymer waveguide with a periodic poled structure

Satoru Tomaru; Toshio Watanabe; Makoto Hikita; Michiyuki Amano; Yoshito Shuto; Itaru Yokohoma; Toshikuni Kaino; Masaki Asobe

Appl. Phys. Lett. 68, 1760–1762 (1996) https://doi.org/10.1063/1.116658

Abstract

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Incoherently coupled soliton pairs in biased photorefractive crystals

D. N. Christodoulides; S. R. Singh; M. I. Carvalho; M. Segev

Appl. Phys. Lett. 68, 1763–1765 (1996) https://doi.org/10.1063/1.116659

Abstract

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Early phenomena of capillary discharges for an electrothermal gun

T. Sueda; S. Katsuki; H. Akiyama

Appl. Phys. Lett. 68, 1766–1768 (1996) https://doi.org/10.1063/1.116660

Abstract

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Surface periodic structures induced by pulsed laser irradiation of fullerite

P. Milani; M. Manfredini

Appl. Phys. Lett. 68, 1769–1771 (1996) https://doi.org/10.1063/1.116661

Abstract

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Nanometer‐sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas

Takehito Yoshida; Shigeru Takeyama; Yuka Yamada; Katsuhiko Mutoh

Appl. Phys. Lett. 68, 1772–1774 (1996) https://doi.org/10.1063/1.116662

Abstract

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Electrical properties of Ta₂O₅ films obtained by plasma enhanced chemical vapor deposition using a TaF₅ source

R. A. B. Devine; L. Vallier; J. L. Autran; P. Paillet; J. L. Leray

Appl. Phys. Lett. 68, 1775–1777 (1996) https://doi.org/10.1063/1.116663

Abstract

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Microcrystallography using atomic force microscopy

H. F. Helbig; J. V. Beasock; G. O. Ramseyer; L. H. Walsh

Appl. Phys. Lett. 68, 1778–1780 (1996) https://doi.org/10.1063/1.116664

Abstract

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All laser‐assisted heteroepitaxial growth of Si_0.8Ge_0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification

R. Serna; A. Blasco; T. Missana; J. Solís; C. N. Afonso; A. Rodríguez; T. Rodríguez; M. F. da Silva

Appl. Phys. Lett. 68, 1781–1783 (1996) https://doi.org/10.1063/1.116665

Abstract

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Metastable γ phase in ion beam synthesized FeSi₂

Z. Yang; G. Shao; K. P. Homewood

Appl. Phys. Lett. 68, 1784–1786 (1996) https://doi.org/10.1063/1.116666

Abstract

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Growth of dark spots by interdiffusion across organic layers in organic electroluminescent devices

Masamichi Fujihira; Lee‐Mi Do; Amane Koike; Eun‐Mi Han

Appl. Phys. Lett. 68, 1787–1789 (1996) https://doi.org/10.1063/1.116667

Abstract

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Strain‐induced phase separation in annealed low‐temperature grown Al_0.3Ga_0.7As

K. C. Hsieh; K. Y. Hsieh; Y. L. Hwang; T. Zhang; R. M. Kolbas

Appl. Phys. Lett. 68, 1790–1792 (1996) https://doi.org/10.1063/1.116668

Abstract

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Carbon implantation in Al_xGa_1−xAs

S. J. Pearton; C. R. Abernathy

Appl. Phys. Lett. 68, 1793–1795 (1996) https://doi.org/10.1063/1.116015

Abstract

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Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP

H. Murata; T. C. Hsu; I. H. Ho; L. C. Su; Y. Hosokawa; G. B. Stringfellow

Appl. Phys. Lett. 68, 1796–1798 (1996) https://doi.org/10.1063/1.116016

Abstract

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Fabrication of polymer nanodots with single electron patterning technology

Toshiyuki Yoshimura; Hiroshi Shiraishi; Jiro Yamamoto; Tsuneo Terasawa; Shinji Okazaki

Appl. Phys. Lett. 68, 1799–1801 (1996) https://doi.org/10.1063/1.116017

Abstract

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Carbon‐doped boron nitride cold cathodes

R. W. Pryor

Appl. Phys. Lett. 68, 1802–1804 (1996) https://doi.org/10.1063/1.116018

Abstract

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Strain and phonon shifts in GaAs_1−xP_x alloys

G. Armelles; M. J. Sanjuán; L. González; Y. González

Appl. Phys. Lett. 68, 1805–1807 (1996) https://doi.org/10.1063/1.116019

Abstract

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Metastability and persistent photoconductivity in Mg‐doped p‐type GaN

C. Johnson; J. Y. Lin; H. X. Jiang; M. Asif Khan; C. J. Sun

Appl. Phys. Lett. 68, 1808–1810 (1996) https://doi.org/10.1063/1.116020

Abstract

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Scanning‐tunneling‐microscopy modification of nitrogen‐passivated GaAs (001) surfaces on a nanometer scale

Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi

Appl. Phys. Lett. 68, 1811–1813 (1996) https://doi.org/10.1063/1.116021

Abstract

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A model of size‐dependent photoluminescence in amorphous silicon nanostructures: Comparison with observations of porous silicon

M. J. Estes; G. Moddel

Appl. Phys. Lett. 68, 1814–1816 (1996) https://doi.org/10.1063/1.116022

Abstract

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Low‐temperature epitaxial growth of CoGe₂(001)/GaAs(100) films using the partially ionized beam deposition technique

K. E. Mello; S. R. Soss; S. P. Murarka; T.‐M. Lu; S. L. Lee

Appl. Phys. Lett. 68, 1817–1819 (1996) https://doi.org/10.1063/1.116023

Abstract

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Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy

T. J. Schmidt; X. H. Yang; W. Shan; J. J. Song; A. Salvador; W. Kim; Ö. Aktas; A. Botchkarev; H. Morkoç

Appl. Phys. Lett. 68, 1820–1822 (1996) https://doi.org/10.1063/1.116024

Abstract

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Atomic steps on a silicon (001) surface tilted toward an arbitrary direction

Lei Zhong; Akimichi Hojo; Yoshiro Aiba; Katuhiro Chaki; Jun Yoshikawa; Kenro Hayashi

Appl. Phys. Lett. 68, 1823–1825 (1996) https://doi.org/10.1063/1.116025

Abstract

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Generation of hole traps in thin silicon oxide layers under high‐field electron injection

Tomasz Brożek; Chand R. Viswanathan

Appl. Phys. Lett. 68, 1826–1828 (1996) https://doi.org/10.1063/1.116026

Abstract

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Role of hydrogen in doping of GaN

Jörg Neugebauer; Chris G. Van de Walle

Appl. Phys. Lett. 68, 1829–1831 (1996) https://doi.org/10.1063/1.116027

Abstract

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Voltage‐tunable two‐color detection by interband and intersubband transitions in a p‐i‐n‐i‐n structure

H. Schneider; C. Schönbein; G. Bihlmann

Appl. Phys. Lett. 68, 1832–1834 (1996) https://doi.org/10.1063/1.116028

Abstract

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Photocurrent multiplication in hydrogenated amorphous silicon staircase photodiode films

Kazuaki Sawada; Shinya Akata; Toshinori Takeuchi; Takao Ando

Appl. Phys. Lett. 68, 1835–1837 (1996) https://doi.org/10.1063/1.116029

Abstract

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Dynamical switching behavior of n‐i‐p‐i modulator structures

U. Pfeiffer; M. Kneissl; B. Knüpfer; N. Müller; P. Kiesel; G. H. Döhler; J. S. Smith

Appl. Phys. Lett. 68, 1838–1840 (1996) https://doi.org/10.1063/1.116030

Abstract

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Pd/Zn/Pd/Au and Pd/Zn/Au/LaB₆/Au ohmic contacts to p‐type In_0.53Ga_0.47As

P. Ressel; P. W. Leech; G. K. Reeves; W. Zhou; E. Kuphal

Appl. Phys. Lett. 68, 1841–1843 (1996) https://doi.org/10.1063/1.116031

Abstract

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Screening effects on the band‐gap renormalization of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

Seoung‐Hwan Park; Doyeol Ahn

Appl. Phys. Lett. 68, 1844–1846 (1996) https://doi.org/10.1063/1.116032

Abstract

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Observation of lateral confinement effect in Ge quantum wires self‐aligned at step edges on Si(100)

H. Sunamura; N. Usami; Y. Shiraki; S. Fukatsu

Appl. Phys. Lett. 68, 1847–1849 (1996) https://doi.org/10.1063/1.116033

Abstract

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Low interface trap density for remote plasma deposited SiO₂ on n‐type GaN

H. C. Casey, Jr.; G. G. Fountain; R. G. Alley; B. P. Keller; Steven P. DenBaars

Appl. Phys. Lett. 68, 1850–1852 (1996) https://doi.org/10.1063/1.116034

Abstract

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ab‐plane anisotropy of the critical currents in twinned YBa₂Cu₃O_7−δ superconductors

H. Safar; S. Foltyn; H. Kung; M. P. Maley; J. O. Willis; P. Arendt; X. D. Wu

Appl. Phys. Lett. 68, 1853–1855 (1996) https://doi.org/10.1063/1.116035

Abstract

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Low noise YBa₂Cu₃O_7−x SQUID magnetometers operated with additional positive feedback

D. Drung; E. Dantsker; F. Ludwig; H. Koch; R. Kleiner; John Clarke; S. Krey; D. Reimer; B. David; O. Doessel

Appl. Phys. Lett. 68, 1856–1858 (1996) https://doi.org/10.1063/1.116036

Abstract

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Properties of NdBa₂Cu₃O_7−δ thin film prepared by off‐axis rf sputtering

In‐Seon Kim; Kyu Won Lee; Yong Ki Park; Jong‐Chul Park

Appl. Phys. Lett. 68, 1859–1861 (1996) https://doi.org/10.1063/1.116037

Abstract

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A low‐noise micromachined millimeter‐wave heterodyne mixer using Nb superconducting tunnel junctions

Gert de Lange; Brian R. Jacobson; Qing Hu

Appl. Phys. Lett. 68, 1862–1864 (1996) https://doi.org/10.1063/1.116038

Abstract

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Study of the leakage field of magnetic force microscopy thin‐film tips using electron holography

B. G. Frost; N. F. van Hulst; E. Lunedei; G. Matteucci; E. Rikkers

Appl. Phys. Lett. 68, 1865–1867 (1996) https://doi.org/10.1063/1.116039

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Comment on ‘‘Iron diffusivity in silicon: Impact of charge state’’ [Appl. Phys. Lett. 66, 860 (1995)]

T. Heiser; A. Mesli

Appl. Phys. Lett. 68, 1868–1869 (1996) https://doi.org/10.1063/1.116040

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Response to ‘‘Comment on ‘Iron diffusivity in silicon: Impact of charge state’ ’’ [Appl. Phys. Lett. 68, 1868 (1996)]

Sergei Koveshnikov; George Rozgonyi

Appl. Phys. Lett. 68, 1870–1871 (1996) https://doi.org/10.1063/1.116041

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Comment on ‘‘Normal incidence second‐harmonic generation in L‐valley AlSb/GaSb/Ga_1−xAl_xSb/AlSb stepped quantum wells’’ [Appl. Phys. Lett. 65, 2048 (1994)]

M. Zal/użny; V. Bondarenko

Appl. Phys. Lett. 68, 1872 (1996) https://doi.org/10.1063/1.116125

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Response to ‘‘Comment on ‘Normal incidence second‐harmonic generation in L‐valley AlSb/GaSb/Ga_1−xAl_xSb/AlSb stepped quantum wells’ ’’ [Appl. Phys. Lett. 68, 1872 (1996)]

L. R. Ram‐Mohan; J. R. Meyer; H. Xie; W. I. Wang

Appl. Phys. Lett. 68, 1873 (1996) https://doi.org/10.1063/1.116126

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