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Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
Appl. Phys. Lett. 67, 733–735 (1995)
https://doi.org/10.1063/1.115208
Photorefractive asymmetric Fabry–Pérot quantum wells: Transverse‐field geometry
Appl. Phys. Lett. 67, 736–738 (1995)
https://doi.org/10.1063/1.115209
Subwavelength amorphous silicon transmission gratings and applications in polarizers and waveplates
Appl. Phys. Lett. 67, 742–744 (1995)
https://doi.org/10.1063/1.115211
Measurement of elastic impedance with high spatial resolution using acoustic microscopy
Appl. Phys. Lett. 67, 745–747 (1995)
https://doi.org/10.1063/1.115212
Depth profile of the nonlinear optical susceptibility of ion‐implanted KNbO3 waveguides
Appl. Phys. Lett. 67, 748–750 (1995)
https://doi.org/10.1063/1.115213
Type‐II quantum‐well lasers for the mid‐wavelength infrared
In Special Collection:
On-Chip Mid-Infrared and THz Frequency Combs for Spectroscopy
Appl. Phys. Lett. 67, 757–759 (1995)
https://doi.org/10.1063/1.115216
Postphotobleaching method for the control of coupling constant in an electro‐optic polymer directional coupler switch
Appl. Phys. Lett. 67, 763–765 (1995)
https://doi.org/10.1063/1.115218
Blue and red laser action in Nd3+:Pr3+ co‐doped fluorozirconate glass
Appl. Phys. Lett. 67, 768–770 (1995)
https://doi.org/10.1063/1.115461
Blocking injected dark current in impurity‐band‐conduction photodetectors using a PtSi Schottky barrier
Appl. Phys. Lett. 67, 774–776 (1995)
https://doi.org/10.1063/1.115463
Phononic band structure in a mass chain
Appl. Phys. Lett. 67, 777–779 (1995)
https://doi.org/10.1063/1.115464
Spontaneous vitrification in the Au–Ta system with a small size difference
Appl. Phys. Lett. 67, 780–782 (1995)
https://doi.org/10.1063/1.115465
Light emission of C60 embedded in porous silicon
Appl. Phys. Lett. 67, 783–785 (1995)
https://doi.org/10.1063/1.115466
Direct writing of nanostructures from silane on silicon (111)
Appl. Phys. Lett. 67, 786–788 (1995)
https://doi.org/10.1063/1.115467
Strain relaxation of Ge1−xSix buffer systems grown on Ge (001)
Appl. Phys. Lett. 67, 789–791 (1995)
https://doi.org/10.1063/1.115468
X‐ray characterization of the domain structure of epitaxial lead titanate thin films on (001) strontium titanate
Appl. Phys. Lett. 67, 792–794 (1995)
https://doi.org/10.1063/1.115469
Optical and dielectric properties of photochromic dye in amorphous state and its application
Appl. Phys. Lett. 67, 795–797 (1995)
https://doi.org/10.1063/1.115470
Dynamics of transgranular voids in metallic thin films under electromigration conditions
Appl. Phys. Lett. 67, 798–800 (1995)
https://doi.org/10.1063/1.115471
Carrier capture efficiency of AlGaAs/GaAs quantum wires affected by composition nonuniformity of an AlGaAs barrier layer
Appl. Phys. Lett. 67, 804–806 (1995)
https://doi.org/10.1063/1.115449
Comparison of high temperature thermal stabilities of Ru and RuO2 Schottky contacts to GaAs
Appl. Phys. Lett. 67, 807–809 (1995)
https://doi.org/10.1063/1.115450
Current transport in amorphous silicon n/p junctions and their application as ‘‘tunnel’’ junctions in tandem solar cells
Appl. Phys. Lett. 67, 813–815 (1995)
https://doi.org/10.1063/1.115452
Picosecond laser dynamics of gain‐coupled and index‐coupled InGaAs/InGaAlAs quantum well distributed feedback lasers
Appl. Phys. Lett. 67, 816–818 (1995)
https://doi.org/10.1063/1.115453
Improved compositional abruptness at the InGaAs on GaAs interface by presaturation with In during molecular‐beam epitaxy
Appl. Phys. Lett. 67, 819–821 (1995)
https://doi.org/10.1063/1.115454
Preparation and characterization of Cu(In1−xGax)3Se5 thin films
Appl. Phys. Lett. 67, 825–827 (1995)
https://doi.org/10.1063/1.115456
Transport characteristics of polycrystalline‐silicon wire influenced by single‐electron charging at room temperature
Appl. Phys. Lett. 67, 828–830 (1995)
https://doi.org/10.1063/1.115457
Structural phase behavior in II–VI semiconductor nanoparticles
Appl. Phys. Lett. 67, 831–833 (1995)
https://doi.org/10.1063/1.115458
A high‐current‐gain, high‐speed P‐n‐p AlGaAs/InGaAs/GaAs collector‐up heterojunction bipolar transistor
Appl. Phys. Lett. 67, 837–839 (1995)
https://doi.org/10.1063/1.115521
Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure
Appl. Phys. Lett. 67, 846–847 (1995)
https://doi.org/10.1063/1.115524
Exploring the dissipative regime of superconductors for practical current‐lead applications
Appl. Phys. Lett. 67, 848–850 (1995)
https://doi.org/10.1063/1.115525
Jc enhancement of electrophoretically deposited YBa2Cu3O7−δ superconducting wire by BaF2 addition
Appl. Phys. Lett. 67, 851–853 (1995)
https://doi.org/10.1063/1.115526
High transport critical currents in flexible screen‐printed Ag‐(Bi,Pb)2Sr2Ca2Cu3Ox tapes
Appl. Phys. Lett. 67, 854–856 (1995)
https://doi.org/10.1063/1.115527
Role of magnetic anisotropy in the magnetoimpedance effect in amorphous alloys
Appl. Phys. Lett. 67, 857–859 (1995)
https://doi.org/10.1063/1.115528
Transport‐magnetism correlations in the ferromagnetic oxide La0.7Ca0.3MnO3
M. F. Hundley; M. Hawley; R. H. Heffner; Q. X. Jia; J. J. Neumeier; J. Tesmer; J. D. Thompson; X. D. Wu
Appl. Phys. Lett. 67, 860–862 (1995)
https://doi.org/10.1063/1.115529
What determines the lateral bonding speed in silicon wafer bonding?
Appl. Phys. Lett. 67, 863–865 (1995)
https://doi.org/10.1063/1.115530
Voltage shifts and imprint in ferroelectric capacitors
Appl. Phys. Lett. 67, 866–868 (1995)
https://doi.org/10.1063/1.115531
A simple velocity model for low‐pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 67, 869–871 (1995)
https://doi.org/10.1063/1.115532
High aspect ratio micromachining Teflon by direct exposure to synchrotron radiation
Appl. Phys. Lett. 67, 872–874 (1995)
https://doi.org/10.1063/1.115533
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.