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Direct measurements of the true vibrational amplitudes in shear force microscopy
Appl. Phys. Lett. 67, 3835–3837 (1995)
https://doi.org/10.1063/1.115289
Broadband pump wavelength tuning of a low threshold N‐(4‐nitrophenyl)‐L prolinol near infrared optical parametric oscillator
Appl. Phys. Lett. 67, 3841–3843 (1995)
https://doi.org/10.1063/1.115291
Terahertz photomixing with diode lasers in low‐temperature‐grown GaAs
Appl. Phys. Lett. 67, 3844–3846 (1995)
https://doi.org/10.1063/1.115292
Metallization to asymmetric cladding separate confinement heterostructure lasers
Appl. Phys. Lett. 67, 3847–3849 (1995)
https://doi.org/10.1063/1.115293
Enhanced nonlinear absorption and optical limiting in semiconducting polymer/methanofullerene charge transfer films
Appl. Phys. Lett. 67, 3850–3852 (1995)
https://doi.org/10.1063/1.115294
Highly efficient blue electroluminescence from a distyrylarylene emitting layer with a new dopant
Appl. Phys. Lett. 67, 3853–3855 (1995)
https://doi.org/10.1063/1.115295
Near‐field direct‐write ultraviolet lithography and shear force microscopic studies of the lithographic process
Appl. Phys. Lett. 67, 3859–3861 (1995)
https://doi.org/10.1063/1.115297
Transmission electron microscopy of 〈100〉 dark line defects in CdZnSe quantum well structures
Appl. Phys. Lett. 67, 3862–3864 (1995)
https://doi.org/10.1063/1.115298
Three‐terminal laser structure for high‐speed modulation using dynamic carrier heating
Appl. Phys. Lett. 67, 3868–3870 (1995)
https://doi.org/10.1063/1.115300
Polymeric electro‐optic Mach–Zehnder switches
Appl. Phys. Lett. 67, 3874–3876 (1995)
https://doi.org/10.1063/1.115302
Pulse‐shaping mechanism in colliding‐pulse mode‐locked laser diodes
Appl. Phys. Lett. 67, 3877–3879 (1995)
https://doi.org/10.1063/1.115303
Discharge frequency dependence of particulate growth in high frequency silane plasmas
Appl. Phys. Lett. 67, 3880–3882 (1995)
https://doi.org/10.1063/1.115304
Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases
Appl. Phys. Lett. 67, 3883–3885 (1995)
https://doi.org/10.1063/1.115305
Importance of channeled implantation to the synthesis of erbium silicide layers
Appl. Phys. Lett. 67, 3886–3888 (1995)
https://doi.org/10.1063/1.115306
Photoacoustic procedure for measuring thermal parameters of transparent solids
Appl. Phys. Lett. 67, 3892–3894 (1995)
https://doi.org/10.1063/1.115308
Electro‐optical characteristics and switching behavior of the in‐plane switching mode
Appl. Phys. Lett. 67, 3895–3897 (1995)
https://doi.org/10.1063/1.115309
Work function and desorption energy of H− from heated CaH2
Appl. Phys. Lett. 67, 3904–3905 (1995)
https://doi.org/10.1063/1.115312
Novel laser gain media based on Cr3+‐doped mixed borates RX3(BO3)4
Appl. Phys. Lett. 67, 3906–3908 (1995)
https://doi.org/10.1063/1.115313
Molecular light‐emitting diodes using quinquethiophene Langmuir–Blodgett films
Appl. Phys. Lett. 67, 3909–3911 (1995)
https://doi.org/10.1063/1.115314
Observation of a negative electron affinity for boron nitride
M. J. Powers; M. C. Benjamin; L. M. Porter; R. J. Nemanich; R. F. Davis; J. J. Cuomo; G. L. Doll; Stephen J. Harris
Appl. Phys. Lett. 67, 3912–3914 (1995)
https://doi.org/10.1063/1.115315
Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)
Appl. Phys. Lett. 67, 3915–3917 (1995)
https://doi.org/10.1063/1.115316
Parallel atomic force microscopy using cantilevers with integrated piezoresistive sensors and integrated piezoelectric actuators
Appl. Phys. Lett. 67, 3918–3920 (1995)
https://doi.org/10.1063/1.115317
Strain relaxation in silicon‐germanium microstructures observed by resonant tunneling spectroscopy
Appl. Phys. Lett. 67, 3921–3923 (1995)
https://doi.org/10.1063/1.115318
Photon‐assisted tunneling through a quantum dot at high microwave frequencies
Appl. Phys. Lett. 67, 3924–3926 (1995)
https://doi.org/10.1063/1.114406
Nitrogen doping during atomic layer epitaxial growth of ZnSe
Appl. Phys. Lett. 67, 3927–3929 (1995)
https://doi.org/10.1063/1.114407
Recombination activity of iron‐related complexes in silicon studied by temperature dependent carrier lifetime measurements
Appl. Phys. Lett. 67, 3930–3932 (1995)
https://doi.org/10.1063/1.114408
Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures
Appl. Phys. Lett. 67, 3933–3935 (1995)
https://doi.org/10.1063/1.114409
High‐performance InGaAs photodetectors on Si and GaAs substrates
Appl. Phys. Lett. 67, 3936–3938 (1995)
https://doi.org/10.1063/1.114410
Deposition of high dielectric constant materials by dual spectral sources assisted metalorganic chemical vapor deposition
Appl. Phys. Lett. 67, 3939–3941 (1995)
https://doi.org/10.1063/1.114411
Surface‐related breakdown in silicon: Imaging of current filaments in long p+‐n−‐n+ structures
Appl. Phys. Lett. 67, 3942–3944 (1995)
https://doi.org/10.1063/1.114412
Detailed experimental investigation of a local defect layer used for Si solar cells
Appl. Phys. Lett. 67, 3945–3947 (1995)
https://doi.org/10.1063/1.114413
Indium desorption from InAs surfaces and its dependence on As coverage
Appl. Phys. Lett. 67, 3948–3950 (1995)
https://doi.org/10.1063/1.114414
Determination of silicon evaporation rate at 1200 °C in hydrogen
Lei Zhong; Hiroyuki Fujimori; Masaro Shimbo; Kazuhiko Kashima; Yoshiaki Matsushita; Yoshiro Aiba; Kenro Hayashi; Ryuji Takeda; Hiroshi Shirai; Hiroyuki Saito; Jun‐ichi Matsushita; Jun Yoshikawa
Appl. Phys. Lett. 67, 3951–3953 (1995)
https://doi.org/10.1063/1.114415
Quantum transport in sputtered, epitaxial Si/Si1−xGex heterostructures
Appl. Phys. Lett. 67, 3954–3956 (1995)
https://doi.org/10.1063/1.114416
Atomic structure of the CdTe(001) C(2×2) reconstructed surface: A grazing incidence x‐ray diffraction study
Appl. Phys. Lett. 67, 3957–3959 (1995)
https://doi.org/10.1063/1.114417
Symmetric light emitting devices from poly(p‐di ethynylene phenylene) (p‐di phenylene vinylene) derivatives
Appl. Phys. Lett. 67, 3960–3962 (1995)
https://doi.org/10.1063/1.114418
Intermodulation distortion measurements of a microstrip band‐pass filter made from double‐sided YBa2Cu3Ox films
Appl. Phys. Lett. 67, 3963–3965 (1995)
https://doi.org/10.1063/1.114419
Enhancement of the superconducting properties of TlBa2CaCu2O7+δ thin films via postannealing
Appl. Phys. Lett. 67, 3966–3968 (1995)
https://doi.org/10.1063/1.114420
Coulomb blockade and electrical field effect in nanoscale granular microbridges
Appl. Phys. Lett. 67, 3969–3971 (1995)
https://doi.org/10.1063/1.114421
Diamond synthesis by capacitively coupled radio frequency plasma with the addition of direct current power
Appl. Phys. Lett. 67, 3972–3974 (1995)
https://doi.org/10.1063/1.114422
Novel switching phenomena in ferroelectric Langmuir–Blodgett films
Appl. Phys. Lett. 67, 3975–3977 (1995)
https://doi.org/10.1063/1.114423
Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphere
Appl. Phys. Lett. 67, 3978–3980 (1995)
https://doi.org/10.1063/1.114424
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.