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Modulational instability oscillation and solitary waves in a nonlinear dispersive cavity with parametric gain
Appl. Phys. Lett. 67, 3060–3062 (1995)
https://doi.org/10.1063/1.114864
Optical activity in the vacancy ordered III2VI3 compound semiconductor (Ga0.3In0.7)2Se3
Appl. Phys. Lett. 67, 3066–3068 (1995)
https://doi.org/10.1063/1.114866
Nanometer‐scale imaging of potential profiles in optically excited n‐i‐p‐i heterostructure using Kelvin probe force microscopy
Appl. Phys. Lett. 67, 3069–3071 (1995)
https://doi.org/10.1063/1.114867
New grating fabrication technology for optoelectronic devices: Cascaded self‐induced holography
Appl. Phys. Lett. 67, 3072–3074 (1995)
https://doi.org/10.1063/1.114868
Spectroscopic ellipsometry of RuO2 films prepared by metalorganic chemical vapor deposition
Appl. Phys. Lett. 67, 3078–3080 (1995)
https://doi.org/10.1063/1.114870
Thermo‐optic tuning sensitivity of phase matched second‐harmonic generation in 2‐amino‐5‐nitropyridinium‐dihydrogen crystals
Appl. Phys. Lett. 67, 3081–3083 (1995)
https://doi.org/10.1063/1.114871
Critical mechanical behavior in the fluid/solid transition of suspensions
Appl. Phys. Lett. 67, 3087–3089 (1995)
https://doi.org/10.1063/1.114873
Acoustic surface shape resonances of circularly symmetric defects on solid surfaces
Appl. Phys. Lett. 67, 3090–3092 (1995)
https://doi.org/10.1063/1.114874
Mechanisms for polycrystalline silicon defect passivation by hydrogenation in an electron cyclotron resonance plasma
Appl. Phys. Lett. 67, 3099–3101 (1995)
https://doi.org/10.1063/1.114877
Origin of compositional variations in sputter‐deposited TixW1−x diffusion barrier layers
Appl. Phys. Lett. 67, 3102–3104 (1995)
https://doi.org/10.1063/1.114878
Controlling opacity and gain coefficients of soft x‐ray transitions by ion dilution
Appl. Phys. Lett. 67, 3105–3107 (1995)
https://doi.org/10.1063/1.114879
UV modification of surface pretilt of alignment layers for multidomain liquid crystal displays
Appl. Phys. Lett. 67, 3108–3110 (1995)
https://doi.org/10.1063/1.114849
Imprint of sub‐25 nm vias and trenches in polymers
In Special Collection:
APL Classic Papers
Appl. Phys. Lett. 67, 3114–3116 (1995)
https://doi.org/10.1063/1.114851
Laser deposition of diamondlike carbon films at high intensities
Appl. Phys. Lett. 67, 3120–3122 (1995)
https://doi.org/10.1063/1.114853
Direct observation of precipitates and self‐organized nanostructures in molecular‐beam epitaxy grown heavily doped GaAs:Si
Appl. Phys. Lett. 67, 3123–3125 (1995)
https://doi.org/10.1063/1.114854
Heteroepitaxy of β‐SiC from methyltrichlorosilane and methyltribromosilane on Si(100) without a carbon buffer layer
Appl. Phys. Lett. 67, 3126–3128 (1995)
https://doi.org/10.1063/1.114855
Damage introduction in InGaP by electron cyclotron resonance Ar plasmas
Appl. Phys. Lett. 67, 3129–3131 (1995)
https://doi.org/10.1063/1.114856
Self‐restoration of p‐n junctions in (Hg,Cd)Te
Appl. Phys. Lett. 67, 3132–3134 (1995)
https://doi.org/10.1063/1.114857
Fast metal diffusers in Si in the presence of Si self‐interstitial traps
Appl. Phys. Lett. 67, 3135–3137 (1995)
https://doi.org/10.1063/1.114858
(111)A CdTe rotation growth on (111) Si with low growth rate by metalorganic chemical vapor deposition
Appl. Phys. Lett. 67, 3138–3140 (1995)
https://doi.org/10.1063/1.114859
Surface dimerization induced CuPtB versus CuPtA ordering of GaInP alloys
Appl. Phys. Lett. 67, 3141–3143 (1995)
https://doi.org/10.1063/1.114860
Contact and distributed effects in quantum well infrared photodetectors
Appl. Phys. Lett. 67, 3147–3149 (1995)
https://doi.org/10.1063/1.114862
Mott ionization of excitons in n‐type Zn1−xMnxSe epilayers
Appl. Phys. Lett. 67, 3150–3152 (1995)
https://doi.org/10.1063/1.115145
Auger lifetime in InAs, InAsSb, and InAsSb‐InAlAsSb quantum wells
Appl. Phys. Lett. 67, 3153–3155 (1995)
https://doi.org/10.1063/1.115146
Space‐charge‐limited injection in n+‐i‐n+ structures fabricated by a focused ion beam
Appl. Phys. Lett. 67, 3159–3161 (1995)
https://doi.org/10.1063/1.115148
Production of atomic hydrogen in Al–SiO2–Si systems by vacuum ultraviolet radiation
Appl. Phys. Lett. 67, 3162–3164 (1995)
https://doi.org/10.1063/1.115149
Plasmons in a superlattice in a parabolic quantum well
Appl. Phys. Lett. 67, 3165–3167 (1995)
https://doi.org/10.1063/1.115150
Edge‐emitting quantum well heterostructure laser diodes with auxiliary native‐oxide vertical cavity confinement
Appl. Phys. Lett. 67, 3168–3170 (1995)
https://doi.org/10.1063/1.115151
Direct measurement of the internal electric field distribution in a multilayer organic light‐emitting diode
Appl. Phys. Lett. 67, 3171–3173 (1995)
https://doi.org/10.1063/1.115152
YBa2Cu3O7 step‐edge dc SQUID with coplanar control lines
Appl. Phys. Lett. 67, 3177–3179 (1995)
https://doi.org/10.1063/1.115154
Alternating‐current losses in silver‐sheathed (Bi,Pb)2Sr2Ca2Cu3O10 tapes II: Role of interfilamentary coupling
Appl. Phys. Lett. 67, 3180–3182 (1995)
https://doi.org/10.1063/1.115155
Operation of high‐temperature rf SQUID magnetometers using dielectric SrTiO3 resonators
Appl. Phys. Lett. 67, 3183–3185 (1995)
https://doi.org/10.1063/1.115156
Critical currents and pinning forces in a‐axis oriented EuBa2Cu3O7/PrBa2Cu3O7 superlattices
Appl. Phys. Lett. 67, 3186–3188 (1995)
https://doi.org/10.1063/1.115157
Measurement of the ac power loss of (Bi,Pb)2Sr2Ca2Cu3Ox composite tapes using the transport technique
S. Fleshler; L. T. Cronis; G. E. Conway; A. P. Malozemoff; T. Pe; J. McDonald; J. R. Clem; G. Vellego; P. Metra
Appl. Phys. Lett. 67, 3189–3191 (1995)
https://doi.org/10.1063/1.115158
Fabrication of NiFe thin film elements by dry etching using CH4/H2/O2
Appl. Phys. Lett. 67, 3194–3196 (1995)
https://doi.org/10.1063/1.115160
Magnetic properties of rapidly quenched high remanence Zr added Sm–Fe–N isotropic powders
Appl. Phys. Lett. 67, 3197–3199 (1995)
https://doi.org/10.1063/1.115161
Reversible hydrogen annealing of metal‐oxide‐silicon carbide devices at high temperatures
Appl. Phys. Lett. 67, 3203–3205 (1995)
https://doi.org/10.1063/1.115163
Binary coding and correlations in the noise frequencies of an oscillator
Appl. Phys. Lett. 67, 3206–3208 (1995)
https://doi.org/10.1063/1.115164
Nucleation of homoepitaxial films grown with ion assistance on Pt(111)
Appl. Phys. Lett. 67, 3209–3211 (1995)
https://doi.org/10.1063/1.115165
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.