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Volume 67, Issue 20

13 November 1995

All Issues

ISSN 0003-6951

EISSN 1077-3118

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

L. J. Mawst; A. Bhattacharya; M. Nesnidal; J. Lopez; D. Botez; J. A. Morris; P. Zory

Appl. Phys. Lett. 67, 2901–2903 (1995) https://doi.org/10.1063/1.114836

Abstract

View articletitled, High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

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Tailoring the heavy‐hole and light‐hole quantum‐confined Stark effect using multistrain‐stepped quantum wells

M. Silver; P. D. Greene; A. R. Adams

Appl. Phys. Lett. 67, 2904–2906 (1995) https://doi.org/10.1063/1.114837

Abstract

View articletitled, Tailoring the heavy‐hole and light‐hole quantum‐confined Stark effect using multistrain‐stepped quantum wells

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Generation of ultrabroadband femtosecond pulses in the mid‐infrared by optical rectification of 15 fs light pulses at 100 MHz repetition rate

A. Bonvalet; M. Joffre; J. L. Martin; A. Migus

Appl. Phys. Lett. 67, 2907–2909 (1995) https://doi.org/10.1063/1.114838

Abstract

View articletitled, Generation of ultrabroadband femtosecond pulses in the mid‐infrared by optical rectification of 15 fs light pulses at 100 MHz repetition rate

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Wide acceptance bandwidth difference frequency generation in quasi‐phase‐matched LiNbO₃

Lew Goldberg; W. K. Burns; R. W. McElhanon

Appl. Phys. Lett. 67, 2910–2912 (1995) https://doi.org/10.1063/1.114839

Abstract

View articletitled, Wide acceptance bandwidth difference frequency generation in quasi‐phase‐matched LiNbO3

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On chirp control in two section distributed feedback semiconductor lasers

J. Feng; T. R. Chen; A. Yariv

Appl. Phys. Lett. 67, 2913–2915 (1995) https://doi.org/10.1063/1.114840

Abstract

View articletitled, On chirp control in two section distributed feedback semiconductor lasers

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Transverse magnetotransport anisotropy in a semiconductor superlattice

F. Aristone; J. F. Palmier; P. Gassot; J. C. Portal; F. Mollot

Appl. Phys. Lett. 67, 2916–2918 (1995) https://doi.org/10.1063/1.114841

Abstract

View articletitled, Transverse magnetotransport anisotropy in a semiconductor superlattice

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Large second‐order optical nonlinearities in pulsed laser ablated silicon carbide thin films

P. M. Lundquist; H. C. Ong; W. P. Lin; R. P. H. Chang; J. B. Ketterson; G. K. Wong

Appl. Phys. Lett. 67, 2919–2921 (1995) https://doi.org/10.1063/1.114842

Abstract

View articletitled, Large second‐order optical nonlinearities in pulsed laser ablated silicon carbide thin films

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Interaction of laser ablation plasma plume with grid screens

V. N. Anisimov; V. Yu. Baranov; V. G. Grishina; O. N. Derkach; A. Yu. Sebrant; M. A. Stepanova

Appl. Phys. Lett. 67, 2922–2924 (1995) https://doi.org/10.1063/1.114843

Abstract

View articletitled, Interaction of laser ablation plasma plume with grid screens

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1 nm deep mechanical processing of muscovite mica by atomic force microscopy

Shojiro Miyake

Appl. Phys. Lett. 67, 2925–2927 (1995) https://doi.org/10.1063/1.114844

Abstract

View articletitled, 1 nm deep mechanical processing of muscovite mica by atomic force microscopy

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Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

J. E. Greene; J.‐E. Sundgren; L. Hultman; I. Petrov; D. B. Bergstrom

Appl. Phys. Lett. 67, 2928–2930 (1995) https://doi.org/10.1063/1.114845

Abstract

View articletitled, Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

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Secondary defect annihilation in ion beam processed Si_xGe_1−x layers using titanium silicide

K. Kyllesbech Larsen; F. La Via; S. Lombardo; V. Raineri; S. U. Campisano

Appl. Phys. Lett. 67, 2931–2933 (1995) https://doi.org/10.1063/1.114846

Abstract

View articletitled, Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide

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Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

A. Weber; R. Poeckelmann; C.‐P. Klages

Appl. Phys. Lett. 67, 2934–2935 (1995) https://doi.org/10.1063/1.114847

Abstract

View articletitled, Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

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Effect of atomic hydrogen on the acetylene adsorbed Si(100)(2×1) surface

Yan Chen; Zhaohui Liu; Qingzhe Zhang; Kean Feng; Zhangda Lin

Appl. Phys. Lett. 67, 2936–2938 (1995) https://doi.org/10.1063/1.114848

Abstract

View articletitled, Effect of atomic hydrogen on the acetylene adsorbed Si(100)(2×1) surface

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Photoacoustic study of the effect of degassing temperature on thermal diffusivity of hydroxyl loaded alumina

S. Sankara Raman; V. P. N. Nampoori; C. P. G. Vallabhan; G. Ambadas; S. Sugunan

Appl. Phys. Lett. 67, 2939–2941 (1995) https://doi.org/10.1063/1.114818

Abstract

View articletitled, Photoacoustic study of the effect of degassing temperature on thermal diffusivity of hydroxyl loaded alumina

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Enhancement of room‐temperature photoluminescence in thin‐film polycrystalline silicon produced by low power laser annealing

S. Ostapenko; A. U. Savchuk; G. Nowak; J. Lagowski; A. M. Hoff

Appl. Phys. Lett. 67, 2942–2944 (1995) https://doi.org/10.1063/1.114819

Abstract

View articletitled, Enhancement of room‐temperature photoluminescence in thin‐film polycrystalline silicon produced by low power laser annealing

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Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy

N. Teraguchi; H. Mouri; Y. Tomomura; A. Suzuki; H. Taniguchi; J. Rorison; G. Duggan

Appl. Phys. Lett. 67, 2945–2947 (1995) https://doi.org/10.1063/1.114820

Abstract

View articletitled, Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy

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Photoinduced intersubband absorption in Si/SiGe quantum wells

P. Boucaud; L. Gao; Z. Moussa; F. Visocekas; F. H. Julien; J.‐M. Lourtioz; I. Sagnes; Y. Campidelli; P.‐A. Badoz

Appl. Phys. Lett. 67, 2948–2950 (1995) https://doi.org/10.1063/1.114821

Abstract

View articletitled, Photoinduced intersubband absorption in Si/SiGe quantum wells

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Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition

K. A. Pacheco; B. A. Ferguson; C. Li; S. John; S. Banerjee; C. B. Mullins

Appl. Phys. Lett. 67, 2951–2953 (1995) https://doi.org/10.1063/1.114822

Abstract

View articletitled, Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition

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Band‐gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation

S. Charbonneau; P. J. Poole; Y. Feng; G. C. Aers; M. Dion; M. Davies; R. D. Goldberg; I. V. Mitchell

Appl. Phys. Lett. 67, 2954–2956 (1995) https://doi.org/10.1063/1.114823

Abstract

View articletitled, Band‐gap tuning of InGaAs/InGaAsP/InP laser using high energy ion implantation

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Time‐resolved measurement of single‐electron tunneling in a Si single‐electron transistor with satellite Si islands

A. Fujiwara; Y. Takahashi; K. Murase; M. Tabe

Appl. Phys. Lett. 67, 2957–2959 (1995) https://doi.org/10.1063/1.114824

Abstract

View articletitled, Time‐resolved measurement of single‐electron tunneling in a Si single‐electron transistor with satellite Si islands

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GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

J. N. Baillargeon; K. Y. Cheng; A. Y. Cho

Appl. Phys. Lett. 67, 2960–2962 (1995) https://doi.org/10.1063/1.114825

Abstract

View articletitled, GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

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Compositional and structural analysis of AlSb(As) tunneling barriers in InAs/AlSb(As)/GaSb resonant interband‐tunneling structures

J. Wagner; J. Schmitz; H. Obloh; P. Koidl

Appl. Phys. Lett. 67, 2963–2965 (1995) https://doi.org/10.1063/1.114826

Abstract

View articletitled, Compositional and structural analysis of AlSb(As) tunneling barriers in InAs/AlSb(As)/GaSb resonant interband‐tunneling structures

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Anisotropic high‐field transverse differential mobility of holes in silicon

J. M. Hinckley; J. Singh

Appl. Phys. Lett. 67, 2966–2968 (1995) https://doi.org/10.1063/1.114827

Abstract

View articletitled, Anisotropic high‐field transverse differential mobility of holes in silicon

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Band alignment at the CdS/Cu₂In₄Se₇ heterojunction interface

A. J. Nelson; C. R. Schwerdtfeger; W. L. O’Brien

Appl. Phys. Lett. 67, 2969–2971 (1995) https://doi.org/10.1063/1.114828

Abstract

View articletitled, Band alignment at the CdS/Cu2In4Se7 heterojunction interface

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Nitrogen doping of tellurium‐based II–VI compounds during growth by molecular beam epitaxy

T. Baron; K. Saminadayar; N. Magnea

Appl. Phys. Lett. 67, 2972–2974 (1995) https://doi.org/10.1063/1.114829

Abstract

View articletitled, Nitrogen doping of tellurium‐based II–VI compounds during growth by molecular beam epitaxy

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Carrier collection losses in amorphous silicon and amorphous silicon–germanium alloy solar cells

A. Banerjee; X. Xu; J. Yang; S. Guha

Appl. Phys. Lett. 67, 2975–2977 (1995) https://doi.org/10.1063/1.114830

Abstract

View articletitled, Carrier collection losses in amorphous silicon and amorphous silicon–germanium alloy solar cells

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Theory of quasiequilibrium nonlinear optical absorption in semiconductor superlattices

K.‐C. Je; T. Meier; F. Rossi; S. W. Koch

Appl. Phys. Lett. 67, 2978–2980 (1995) https://doi.org/10.1063/1.114831

Abstract

View articletitled, Theory of quasiequilibrium nonlinear optical absorption in semiconductor superlattices

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Transmission electron microscopy investigation of the morphology of InP Stranski–Krastanow islands grown by metalorganic chemical vapor deposition

K. Georgsson; N. Carlsson; L. Samuelson; W. Seifert; L. R. Wallenberg

Appl. Phys. Lett. 67, 2981–2982 (1995) https://doi.org/10.1063/1.114832

Abstract

View articletitled, Transmission electron microscopy investigation of the morphology of InP Stranski–Krastanow islands grown by metalorganic chemical vapor deposition

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Application to optical components of dielectric porous silicon multilayers

C. Mazzoleni; L. Pavesi

Appl. Phys. Lett. 67, 2983–2985 (1995) https://doi.org/10.1063/1.114833

Abstract

View articletitled, Application to optical components of dielectric porous silicon multilayers

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Structural properties of low temperature plasma enhanced chemical vapor deposited silicon oxide films using disilane and nitrous oxide

Juho Song; G. S. Lee

Appl. Phys. Lett. 67, 2986–2988 (1995) https://doi.org/10.1063/1.114834

Abstract

View articletitled, Structural properties of low temperature plasma enhanced chemical vapor deposited silicon oxide films using disilane and nitrous oxide

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Resistless high resolution optical lithography on silicon

N. Kramer; M. Niesten; C. Schönenberger

Appl. Phys. Lett. 67, 2989–2991 (1995) https://doi.org/10.1063/1.114835

Abstract

View articletitled, Resistless high resolution optical lithography on silicon

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Proximity gettering of transition metals in separation by implanted oxygen structures

W. Skorupa; N. Hatzopoulos; R. A. Yankov; A. B. Danilin

Appl. Phys. Lett. 67, 2992–2994 (1995) https://doi.org/10.1063/1.114929

Abstract

View articletitled, Proximity gettering of transition metals in separation by implanted oxygen structures

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Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

T. Egawa; Y. Hasegawa; T. Jimbo; M. Umeno

Appl. Phys. Lett. 67, 2995–2997 (1995) https://doi.org/10.1063/1.114930

Abstract

View articletitled, Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

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Influence of hydrogen on chemical vapor deposition of tungsten on sputter‐deposited TiN layers

S.‐L. Zhang; R. Palmans; J. Keinonen; C. S. Petersson; K. Maex

Appl. Phys. Lett. 67, 2998–3000 (1995) https://doi.org/10.1063/1.114931

Abstract

View articletitled, Influence of hydrogen on chemical vapor deposition of tungsten on sputter‐deposited TiN layers

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Boron incorporation in Si_1−xGe_x films grown by ultrahigh vacuum chemical vapor deposition using Si₂H₆ and GeH₄

L. P. Chen; C. T. Chou; G. W. Huang; W. C. Tsai; C. Y. Chang

Appl. Phys. Lett. 67, 3001–3003 (1995) https://doi.org/10.1063/1.114932

Abstract

View articletitled, Boron incorporation in Si1−xGex films grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4

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Effect of growth temperature on the electrical properties of CCl₄‐doped semi‐insulating InP

Nathan F. Gardner; Quesnell J. Hartmann; Judith E. Baker; Gregory E. Stillman

Appl. Phys. Lett. 67, 3004–3006 (1995) https://doi.org/10.1063/1.114933

Abstract

View articletitled, Effect of growth temperature on the electrical properties of CCl4‐doped semi‐insulating InP

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Depth dependent collection functions in thin film chalcopyrite solar cells

R. Scheer; C. Knieper; L. Stolt

Appl. Phys. Lett. 67, 3007–3009 (1995) https://doi.org/10.1063/1.114934

Abstract

View articletitled, Depth dependent collection functions in thin film chalcopyrite solar cells

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Optical characterization of continuous compositional gradients in thin films by real time spectroscopic ellipsometry

Sangbo Kim; R. W. Collins

Appl. Phys. Lett. 67, 3010–3012 (1995) https://doi.org/10.1063/1.114935

Abstract

View articletitled, Optical characterization of continuous compositional gradients in thin films by real time spectroscopic ellipsometry

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Theory of optical gain in ideal GaN heterostructure lasers

A. T. Meney; E. P. O’Reilly

Appl. Phys. Lett. 67, 3013–3015 (1995) https://doi.org/10.1063/1.114936

Abstract

View articletitled, Theory of optical gain in ideal GaN heterostructure lasers

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Deep level transient spectroscopy of InP quantum dots

S. Anand; N. Carlsson; M‐E Pistol; L. Samuelson; W. Seifert

Appl. Phys. Lett. 67, 3016–3018 (1995) https://doi.org/10.1063/1.114937

Abstract

View articletitled, Deep level transient spectroscopy of InP quantum dots

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Polarization of porous silicon luminescence

S. V. Gaponenko; V. K. Kononenko; E. P. Petrov; I. N. Germanenko; A. P. Stupak; Y. H. Xie

Appl. Phys. Lett. 67, 3019–3021 (1995) https://doi.org/10.1063/1.114938

Abstract

View articletitled, Polarization of porous silicon luminescence

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Pulsed terahertz‐beam spectroscopy as a probe of the thermal and quantum response of YBa₂Cu₃O_7−δ superfluid

Yongqian Liu; John F. Whitaker; Ctirad Uher; S. Y. Hou; J. M. Phillips

Appl. Phys. Lett. 67, 3022–3024 (1995) https://doi.org/10.1063/1.114939

Abstract

View articletitled, Pulsed terahertz‐beam spectroscopy as a probe of the thermal and quantum response of YBa2Cu3O7−δ superfluid

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Effects of axial tensile and bending strains on critical currents of monoand

M. Suenaga; Y. Fukumoto; P. Haldar; T. R. Thurston; U. Wildgrüber

Appl. Phys. Lett. 67, 3025–3027 (1995) https://doi.org/10.1063/1.114940

Abstract

View articletitled, Effects of axial tensile and bending strains on critical currents of monoand

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Transport properties of magnetic field/liquid assisted textured YBa₂Cu₃O_7−x thick films

J. A. Lewis; M. Wegmann

Appl. Phys. Lett. 67, 3028–3030 (1995) https://doi.org/10.1063/1.115443

Abstract

View articletitled, Transport properties of magnetic field/liquid assisted textured YBa2Cu3O7−x thick films

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Giant magnetoresistive memory effect in Nd_0.7Sr_0.3MnO_z films

G. C. Xiong; Q. Li; H. L. Ju; S. M. Bhagat; S. E. Lofland; R. L. Greene; T. Venkatesan

Appl. Phys. Lett. 67, 3031–3033 (1995) https://doi.org/10.1063/1.115444

Abstract

View articletitled, Giant magnetoresistive memory effect in Nd0.7Sr0.3MnOz films

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Localized heating of nickel nitride/aluminum nitride nanocomposite films for data storage

L. Maya; T. Thundat; J. R. Thompson; R. J. Stevenson

Appl. Phys. Lett. 67, 3034–3036 (1995) https://doi.org/10.1063/1.115445

Abstract

View articletitled, Localized heating of nickel nitride/aluminum nitride nanocomposite films for data storage

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Electron‐electron interaction in linear arrays of small tunnel junctions

K. K. Likharev; K. A. Matsuoka

Appl. Phys. Lett. 67, 3037–3039 (1995) https://doi.org/10.1063/1.115446

Abstract

View articletitled, Electron‐electron interaction in linear arrays of small tunnel junctions

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Experimental apparatus for determining charge exchange between hydrogen and hydrocarbon groups in the hot filament deposition of diamond

R. I. Cherry; T. Whitmore

Appl. Phys. Lett. 67, 3040–3042 (1995) https://doi.org/10.1063/1.115447

Abstract

View articletitled, Experimental apparatus for determining charge exchange between hydrogen and hydrocarbon groups in the hot filament deposition of diamond

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