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Volume 67, Issue 16

16 October 1995

All Issues

ISSN 0003-6951

EISSN 1077-3118

High second‐harmonic conversion efficiency of quasi‐phase‐matched LiTaO₃ waveguides pumped by single‐mode pulsed AlGaAs laser diodes

A. Azouz; N. Stelmakh; J.‐M. Lourtioz; D. Delacourt; D. Papillon; J. Lehoux

Appl. Phys. Lett. 67, 2263–2265 (1995) https://doi.org/10.1063/1.115120

Abstract

View articletitled, High second‐harmonic conversion efficiency of quasi‐phase‐matched LiTaO3 waveguides pumped by single‐mode pulsed AlGaAs laser diodes

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Lifetime determination for high‐lying excited states using Z scan

Tai‐Huei Wei; Tzer‐Hsiang Huang; Huang‐Der Lin; Sheng‐Hsien Lin

Appl. Phys. Lett. 67, 2266–2268 (1995) https://doi.org/10.1063/1.115121

Abstract

View articletitled, Lifetime determination for high‐lying excited states using Z scan

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Ray optics model and numerical computations for the radiation pressure micromotor

Robert C. Gauthier

Appl. Phys. Lett. 67, 2269–2271 (1995) https://doi.org/10.1063/1.115122

Abstract

View articletitled, Ray optics model and numerical computations for the radiation pressure micromotor

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Nonlinear optical polymers with dipole moment aligned transverse to main chain

Naoto Tsutsumi; Osamu Matsumoto; Wataru Sakai; Tsuyoshi Kiyotsukuri

Appl. Phys. Lett. 67, 2272–2274 (1995) https://doi.org/10.1063/1.115123

Abstract

View articletitled, Nonlinear optical polymers with dipole moment aligned transverse to main chain

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Study on self‐built optical path production in Ce‐doped BaTiO₃ stimulated photorefractive scattering self‐pumped phase conjugator

Xiaodong Mu; Zongshu Shao; Jingwen Zhang; Liangmin Zhang; Minhua Jiang; Haosu Luo; Weizhuo Zhong

Appl. Phys. Lett. 67, 2275–2277 (1995) https://doi.org/10.1063/1.115124

Abstract

View articletitled, Study on self‐built optical path production in Ce‐doped BaTiO3 stimulated photorefractive scattering self‐pumped phase conjugator

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Ultrafast intensity switching and nonthermal carrier effects in semiconductor microcavity lasers

Frank Jahnke; Stephan W. Koch

Appl. Phys. Lett. 67, 2278–2280 (1995) https://doi.org/10.1063/1.115125

Abstract

View articletitled, Ultrafast intensity switching and nonthermal carrier effects in semiconductor microcavity lasers

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Single‐layer white light‐emitting organic electroluminescent devices based on dye‐dispersed poly(N‐vinylcarbazole)

J. Kido; H. Shionoya; K. Nagai

Appl. Phys. Lett. 67, 2281–2283 (1995) https://doi.org/10.1063/1.115126

Abstract

View articletitled, Single‐layer white light‐emitting organic electroluminescent devices based on dye‐dispersed poly(N‐vinylcarbazole)

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Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy

W. Qian; G. S. Rohrer; M. Skowronski; K. Doverspike; L. B. Rowland; D. K. Gaskill

Appl. Phys. Lett. 67, 2284–2286 (1995) https://doi.org/10.1063/1.115127

Abstract

View articletitled, Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy

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Pseudomorphic Si_1−xSn_x alloy films grown by molecular beam epitaxy on Si

S. Yu. Shiryaev; J. Lundsgaard Hansen; P. Kringho/j; A. Nylandsted Larsen

Appl. Phys. Lett. 67, 2287–2289 (1995) https://doi.org/10.1063/1.115128

Abstract

View articletitled, Pseudomorphic Si1−xSnx alloy films grown by molecular beam epitaxy on Si

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Effect of pressure on the crystallization of amorphous Fe–Mo–Si–B alloy with diffusion reaction at its surface

Bin Yao; Bingzhe Ding; Aimin Wang; Zhuangqi Hu

Appl. Phys. Lett. 67, 2290–2292 (1995) https://doi.org/10.1063/1.115129

Abstract

View articletitled, Effect of pressure on the crystallization of amorphous Fe–Mo–Si–B alloy with diffusion reaction at its surface

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Stability hierarchy of the pseudomorphic FeSi₂ phases: α, γ, and defected CsCl

Leo Miglio; Francesca Tavazza; Giovanna Malegori

Appl. Phys. Lett. 67, 2293–2295 (1995) https://doi.org/10.1063/1.115130

Abstract

View articletitled, Stability hierarchy of the pseudomorphic FeSi2 phases: α, γ, and defected CsCl

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The microstructural stability of Al(Cu) lines during electromigration

T. M. Shaw; C‐K. Hu; K. Y. Lee; R. Rosenberg

Appl. Phys. Lett. 67, 2296–2298 (1995) https://doi.org/10.1063/1.115131

Abstract

View articletitled, The microstructural stability of Al(Cu) lines during electromigration

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Deposition of continuous and well adhering diamond films on steel

A. Fayer; O. Glozman; A. Hoffman

Appl. Phys. Lett. 67, 2299–2301 (1995) https://doi.org/10.1063/1.115132

Abstract

View articletitled, Deposition of continuous and well adhering diamond films on steel

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The role of the surface in transient enhanced diffusion

D. R. Lim; C. S. Rafferty; F. P. Klemens

Appl. Phys. Lett. 67, 2302–2304 (1995) https://doi.org/10.1063/1.115133

Abstract

View articletitled, The role of the surface in transient enhanced diffusion

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Integrated micro‐scanning tunneling microscope

Y. Xu; N. C. MacDonald; S. A. Miller

Appl. Phys. Lett. 67, 2305–2307 (1995) https://doi.org/10.1063/1.115134

Abstract

View articletitled, Integrated micro‐scanning tunneling microscope

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Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi₂ thin films on deep‐sub‐micron n⁺ type polycrystalline silicon lines

J. A. Kittl; D. A. Prinslow; P. P. Apte; M. F. Pas

Appl. Phys. Lett. 67, 2308–2310 (1995) https://doi.org/10.1063/1.115135

Abstract

View articletitled, Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines

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Electroplating of poly(tetrafluoroethylene) using plasma enhanced chemical vapor deposited titanium nitride as an interlayer

A. Weber; A. Dietz; R. Pöckelmann; C.‐P. Klages

Appl. Phys. Lett. 67, 2311–2313 (1995) https://doi.org/10.1063/1.115136

Abstract

View articletitled, Electroplating of poly(tetrafluoroethylene) using plasma enhanced chemical vapor deposited titanium nitride as an interlayer

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A gas phase chemical etchant for boron nitride films

Stephen J. Harris; Gary L. Doll; Derek C. Chance; Anita M. Weiner

Appl. Phys. Lett. 67, 2314–2316 (1995) https://doi.org/10.1063/1.115137

Abstract

View articletitled, A gas phase chemical etchant for boron nitride films

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Relaxation mechanism of Ge islands/Si(001) at low temperature

F. K. LeGoues; J. Tersoff; M. C. Reuter; M. Hammar; R. Tromp

Appl. Phys. Lett. 67, 2317–2319 (1995) https://doi.org/10.1063/1.115138

Abstract

View articletitled, Relaxation mechanism of Ge islands/Si(001) at low temperature

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Graded‐composition buffer layers using digital AlGaAsSb alloys

I. J. Fritz; L. R. Dawson; J. A. Olsen; A. J. Howard

Appl. Phys. Lett. 67, 2320–2322 (1995) https://doi.org/10.1063/1.114331

Abstract

View articletitled, Graded‐composition buffer layers using digital AlGaAsSb alloys

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Band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys and their effect on solar cell performance

X. Xu; J. Yang; A. Banerjee; S. Guha; K. Vasanth; S. Wagner

Appl. Phys. Lett. 67, 2323–2325 (1995) https://doi.org/10.1063/1.114332

Abstract

View articletitled, Band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys and their effect on solar cell performance

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Far‐infrared emission spectroscopy of hot two‐dimensional plasmons in Al_0.3Ga_0.7As/GaAs heterojunctions

K. Hirakawa; K. Yamanaka; M. Grayson; D. C. Tsui

Appl. Phys. Lett. 67, 2326–2328 (1995) https://doi.org/10.1063/1.114333

Abstract

View articletitled, Far‐infrared emission spectroscopy of hot two‐dimensional plasmons in Al0.3Ga0.7As/GaAs heterojunctions

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Dry etch damage in InN, InGaN, and InAlN

S. J. Pearton; J. W. Lee; J. D. MacKenzie; C. R. Abernathy; R. J. Shul

Appl. Phys. Lett. 67, 2329–2331 (1995) https://doi.org/10.1063/1.114334

Abstract

View articletitled, Dry etch damage in InN, InGaN, and InAlN

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All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

Mika Toivonen; Marko Jalonen; Arto Salokatve; Jari Näppi; Pekka Savolainen; Markus Pessa; Harry Asonen

Appl. Phys. Lett. 67, 2332–2334 (1995) https://doi.org/10.1063/1.114335

Abstract

View articletitled, All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

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Fabrication of large area silicon solar cells by rapid thermal processing

S. Sivoththaman; W. Laureys; J. Nijs; R. Mertens

Appl. Phys. Lett. 67, 2335–2337 (1995) https://doi.org/10.1063/1.114336

Abstract

View articletitled, Fabrication of large area silicon solar cells by rapid thermal processing

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Single hole quantum dot transistors in silicon

Effendi Leobandung; Lingjie Guo; Stephen Y. Chou

Appl. Phys. Lett. 67, 2338–2340 (1995) https://doi.org/10.1063/1.114337

Abstract

View articletitled, Single hole quantum dot transistors in silicon

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Growth of hydrogenated Si clusters using a quadrupole ion trap

Hirohiko Murakami; Toshihiko Kanayama

Appl. Phys. Lett. 67, 2341–2343 (1995) https://doi.org/10.1063/1.114338

Abstract

View articletitled, Growth of hydrogenated Si clusters using a quadrupole ion trap

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Interband transitions in Cd_0.07Zn_0.93Te/ZnTe strained single quantum wells grown by double‐well temperature‐gradient vapor deposition

J. H. Lee; H. L. Park; T. W. Kim

Appl. Phys. Lett. 67, 2344–2346 (1995) https://doi.org/10.1063/1.114339

Abstract

View articletitled, Interband transitions in Cd0.07Zn0.93Te/ZnTe strained single quantum wells grown by double‐well temperature‐gradient vapor deposition

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Band‐gap reduction and valence‐band splitting of ordered GaInP₂

P. Ernst; C. Geng; F. Scholz; H. Schweizer; Yong Zhang; A. Mascarenhas

Appl. Phys. Lett. 67, 2347–2349 (1995) https://doi.org/10.1063/1.114340

Abstract

View articletitled, Band‐gap reduction and valence‐band splitting of ordered GaInP2

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Study of surface Fermi level and surface state distribution in InAlAs surface‐intrinsic‐n⁺ structure by photoreflectance

J. S. Hwang; W. Y. Chou; S. L. Tyan; H. H. Lin; T. L. Lee

Appl. Phys. Lett. 67, 2350–2352 (1995) https://doi.org/10.1063/1.114341

Abstract

View articletitled, Study of surface Fermi level and surface state distribution in InAlAs surface‐intrinsic‐n+ structure by photoreflectance

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Envelope‐function theorem in the high‐energy limit

Richard L. Liboff; Steven R. Seidman

Appl. Phys. Lett. 67, 2353–2354 (1995) https://doi.org/10.1063/1.114342

Abstract

View articletitled, Envelope‐function theorem in the high‐energy limit

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Epitaxial electrodeposition of CdTe films on InP from aqueous solutions: Role of a chemically deposited CdS intermediate layer

D. Lincot; A. Kampmann; B. Mokili; J. Vedel; R. Cortes; M. Froment

Appl. Phys. Lett. 67, 2355–2357 (1995) https://doi.org/10.1063/1.114343

Abstract

View articletitled, Epitaxial electrodeposition of CdTe films on InP from aqueous solutions: Role of a chemically deposited CdS intermediate layer

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InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V‐grooved InP substrates with (111)A facet sidewalls

J. Wang; B. J. Robinson; D. A. Thompson; J. G. Simmons

Appl. Phys. Lett. 67, 2358–2360 (1995) https://doi.org/10.1063/1.114344

Abstract

View articletitled, InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V‐grooved InP substrates with (111)A facet sidewalls

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Formation of buried oxide in silicon using separation by plasma implantation of oxygen

Jingbao Liu; S. Sundar Kumar Iyer; Chenming Hu; Nathan W. Cheung; Ron Gronsky; Jing Min; Paul Chu

Appl. Phys. Lett. 67, 2361–2363 (1995) https://doi.org/10.1063/1.114345

Abstract

View articletitled, Formation of buried oxide in silicon using separation by plasma implantation of oxygen

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In situ observation of silicon hydrides on Si(100) surfaces during synchrotron‐radiation‐stimulated Si₂H₆ gas source molecular beam epitaxy

A. Yoshigoe; K. Mase; Y. Tsusaka; T. Urisu; Y. Kobayashi; T. Ogino

Appl. Phys. Lett. 67, 2364–2366 (1995) https://doi.org/10.1063/1.114346

Abstract

View articletitled, In situ observation of silicon hydrides on Si(100) surfaces during synchrotron‐radiation‐stimulated Si2H6 gas source molecular beam epitaxy

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Au–Sn solder bumps with tungsten silicide based barrier metallization schemes

W. Pittroff; T. Reiche; J. Barnikow; A. Klein; U. Merkel; K. Vogel; J. Würfl

Appl. Phys. Lett. 67, 2367–2369 (1995) https://doi.org/10.1063/1.114347

Abstract

View articletitled, Au–Sn solder bumps with tungsten silicide based barrier metallization schemes

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Size dependence of band gaps in silicon nanostructures

B. Delley; E. F. Steigmeier

Appl. Phys. Lett. 67, 2370–2372 (1995) https://doi.org/10.1063/1.114348

Abstract

View articletitled, Size dependence of band gaps in silicon nanostructures

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Relaxed Si_0.7Ge_0.3 buffer layers for high‐mobility devices

P. M. Mooney; J. L. Jordan‐Sweet; K. Ismail; J. O. Chu; R. M. Feenstra; F. K. LeGoues

Appl. Phys. Lett. 67, 2373–2375 (1995) https://doi.org/10.1063/1.114349

Abstract

View articletitled, Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices

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Paramagnetic resonance in GaN‐based light emitting diodes

W. E. Carlos; E. R. Glaser; T. A. Kennedy; S. Nakamura

Appl. Phys. Lett. 67, 2376–2378 (1995) https://doi.org/10.1063/1.114350

Abstract

View articletitled, Paramagnetic resonance in GaN‐based light emitting diodes

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Diamond deposition from fluorinated precursors using microwave‐plasma chemical vapor deposition

Ciaran A. Fox; Mark C. McMaster; Wen L. Hsu; Michael A. Kelly; Stig B. Hagstrom

Appl. Phys. Lett. 67, 2379–2381 (1995) https://doi.org/10.1063/1.114351

Abstract

View articletitled, Diamond deposition from fluorinated precursors using microwave‐plasma chemical vapor deposition

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Desegregation of boron at the grain boundaries of the in situ boron doped diamond films

J. T. Huang; C. S. Hu; J. Hwang; H. Chang; L. J. Lee

Appl. Phys. Lett. 67, 2382–2384 (1995) https://doi.org/10.1063/1.114352

Abstract

View articletitled, Desegregation of boron at the grain boundaries of the in situ boron doped diamond films

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Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC

Tsunenobu Kimoto; Akira Itoh; Hiroyuki Matsunami

Appl. Phys. Lett. 67, 2385–2387 (1995) https://doi.org/10.1063/1.114555

Abstract

View articletitled, Incorporation mechanism of N, Al, and B impurities in chemical vapor deposition of SiC

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The effect of a ZnTe buffer layer on the structural and optical properties of the CdTe/ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor‐transport deposition

T. W. Kim; H. L. Park; J. Y. Lee

Appl. Phys. Lett. 67, 2388–2390 (1995) https://doi.org/10.1063/1.114556

Abstract

View articletitled, The effect of a ZnTe buffer layer on the structural and optical properties of the CdTe/ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor‐transport deposition

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Excited state spectroscopy of excitons in single quantum dots

D. Gammon; E. S. Snow; D. S. Katzer

Appl. Phys. Lett. 67, 2391–2393 (1995) https://doi.org/10.1063/1.114557

Abstract

View articletitled, Excited state spectroscopy of excitons in single quantum dots

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Oscillations at liquid‐nitrogen temperatures in the transconductance of a silicon metal‐oxide‐semiconductor field‐effect transistor with a neck in the middle

Kan Takeuchi; Dai Hisamoto; Masaaki Aoki

Appl. Phys. Lett. 67, 2394–2396 (1995) https://doi.org/10.1063/1.114558

Abstract

View articletitled, Oscillations at liquid‐nitrogen temperatures in the transconductance of a silicon metal‐oxide‐semiconductor field‐effect transistor with a neck in the middle

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Properties of YBa₂Cu₃O_7−δ thick films on flexible buffered metallic substrates

X. D. Wu; S. R. Foltyn; P. N. Arendt; W. R. Blumenthal; I. H. Campbell; J. D. Cotton; J. Y. Coulter; W. L. Hults; M. P. Maley; H. F. Safar; J. L. Smith

Appl. Phys. Lett. 67, 2397–2399 (1995) https://doi.org/10.1063/1.114559

Abstract

View articletitled, Properties of YBa2Cu3O7−δ thick films on flexible buffered metallic substrates

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Damping of the oscillations of a permanent magnet levitating between high‐T_c superconductors

R. Grosser; J. Jäger; J. Betz; W. Schoepe

Appl. Phys. Lett. 67, 2400–2402 (1995) https://doi.org/10.1063/1.114560

Abstract

View articletitled, Damping of the oscillations of a permanent magnet levitating between high‐Tc superconductors

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Phase intergrowth in Bi₂Sr₂Ca₂Cu₃O_x superconducting thin films prepared by single cylindrical‐sputtering gun

M. Ohkubo; J. Geerk; G. Linker; O. Meyer

Appl. Phys. Lett. 67, 2403–2405 (1995) https://doi.org/10.1063/1.114561

Abstract

View articletitled, Phase intergrowth in Bi2Sr2Ca2Cu3Ox superconducting thin films prepared by single cylindrical‐sputtering gun

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High critical‐current density of Nd(Ba,Nd)₂Cu₃O_7−δ single crystals

T. Egi; J. G. Wen; K. Kuroda; H. Unoki; N. Koshizuka

Appl. Phys. Lett. 67, 2406–2408 (1995) https://doi.org/10.1063/1.114562

Abstract

View articletitled, High critical‐current density of Nd(Ba,Nd)2Cu3O7−δ single crystals

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Helical peniotron backward wave oscillators

A. T. Lin; Chih‐Chien Lin

Appl. Phys. Lett. 67, 2409–2411 (1995) https://doi.org/10.1063/1.114563

Abstract

View articletitled, Helical peniotron backward wave oscillators

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Wireless single‐electron logic biased by alternating electric field

Alexander N. Korotkov

Appl. Phys. Lett. 67, 2412–2414 (1995) https://doi.org/10.1063/1.114564

Abstract

View articletitled, Wireless single‐electron logic biased by alternating electric field

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Nanometer scale lithography at high scanning speeds with the atomic force microscope using spin on glass

S. W. Park; H. T. Soh; C. F. Quate; S.‐I. Park

Appl. Phys. Lett. 67, 2415–2417 (1995) https://doi.org/10.1063/1.114565

Abstract

View articletitled, Nanometer scale lithography at high scanning speeds with the atomic force microscope using spin on glass

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Erratum: ‘‘Electron Hall mobility of n‐GaN’’ [Appl. Phys. Lett. 66, 1972 (1995)]

D. L. Rode; D. K. Gaskill

Appl. Phys. Lett. 67, 2418 (1995) https://doi.org/10.1063/1.115554

View articletitled, Erratum: ‘‘Electron Hall mobility of n‐GaN’’ [Appl. Phys. Lett. 66, 1972 (1995)]

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