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Nonlinear absorption in polydiacetylene waveguides
William A. Pender; Adrian J. Boyle; Paul Lambkin; Werner J. Blau; Kourosh Mazaheri; Duncan J. Westland; Vladimir Skarda; Massimo Sparpaglione
Appl. Phys. Lett. 66, 786–788 (1995)
https://doi.org/10.1063/1.114188
Nonlinear grating interaction in photorefractive Bi12SiO20
Appl. Phys. Lett. 66, 792–794 (1995)
https://doi.org/10.1063/1.114190
Continuous wave near‐infrared atomic Xe laser excited by a radio frequency discharge in a slab geometry
Appl. Phys. Lett. 66, 801–803 (1995)
https://doi.org/10.1063/1.113425
Nonlinear absorption and refraction of quantum confined InP nanocrystals grown in porous glass
Appl. Phys. Lett. 66, 804–806 (1995)
https://doi.org/10.1063/1.113426
Observation of the dynamics of electron plasma oscillations in femtosecond laser‐produced plasmas
Appl. Phys. Lett. 66, 807–808 (1995)
https://doi.org/10.1063/1.113427
Thermally stable amorphous BaxTi2−xOy thin films
Appl. Phys. Lett. 66, 809–811 (1995)
https://doi.org/10.1063/1.113428
Growth of SnO2 films on micromachined hotplates
Appl. Phys. Lett. 66, 812–814 (1995)
https://doi.org/10.1063/1.113429
Metalorganic chemical vapor deposition of TiO2:N anatase thin film on Si substrate
Appl. Phys. Lett. 66, 815–816 (1995)
https://doi.org/10.1063/1.113430
Excimer laser assisted chemical machining of SiC ceramic
Appl. Phys. Lett. 66, 817–818 (1995)
https://doi.org/10.1063/1.113431
Composition profiles in electrodeposited ceramic superlattices
Appl. Phys. Lett. 66, 819–821 (1995)
https://doi.org/10.1063/1.113432
Solid phase epitaxial growth of sol‐gel derived Pb(Zr,Ti)O3 thin films on SrTiO3 and MgO
Appl. Phys. Lett. 66, 822–824 (1995)
https://doi.org/10.1063/1.113433
Detection of simultaneous lattice expansion and contraction in low‐energy, H‐implanted InP
Appl. Phys. Lett. 66, 825–826 (1995)
https://doi.org/10.1063/1.113434
Growth and characterization of (Y3Fe5O12–Bi3Fe5O12) heterostructures by pulsed laser deposition
Appl. Phys. Lett. 66, 830–832 (1995)
https://doi.org/10.1063/1.113436
One‐dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures
Appl. Phys. Lett. 66, 833–835 (1995)
https://doi.org/10.1063/1.113437
Room‐temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation
Appl. Phys. Lett. 66, 836–838 (1995)
https://doi.org/10.1063/1.113438
All‐optical picosecond switching of a quantum well etalon using spin‐polarization relaxation
Appl. Phys. Lett. 66, 839–841 (1995)
https://doi.org/10.1063/1.113439
Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures
Appl. Phys. Lett. 66, 842–844 (1995)
https://doi.org/10.1063/1.113440
Tellurium‐doped Al0.43Ga0.57As/(In0.2)GaAs modulation doped heterostructures by molecular‐beam‐epitaxy
Appl. Phys. Lett. 66, 845–847 (1995)
https://doi.org/10.1063/1.113441
Independently contacted double quantum well structure fabricated by molecular beam epitaxial regrowth
Appl. Phys. Lett. 66, 848–850 (1995)
https://doi.org/10.1063/1.113407
Room‐temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers
Appl. Phys. Lett. 66, 851–853 (1995)
https://doi.org/10.1063/1.113408
Preannealing effects on carrier concentration profile after Au diffusion in Si
Appl. Phys. Lett. 66, 854–856 (1995)
https://doi.org/10.1063/1.113409
Carrier and screening dynamics in strained [111]‐oriented multiple quantum wells
D. R. Harken; X. R. Huang; D. S. McCallum; Arthur L. Smirl; J. L. Sánchez‐Rojas; A. Sacedón; E. Calleja; E. Muñoz
Appl. Phys. Lett. 66, 857–859 (1995)
https://doi.org/10.1063/1.113410
Thermal stability of AlInAs/GaInAs/InP heterostructures
Appl. Phys. Lett. 66, 863–865 (1995)
https://doi.org/10.1063/1.113412
Vertical silicon metal–semiconductor–metal photodetectors with buried CoSi2 contact
J. P. Hermanns; F. Rüders; E. Stein von Kamienski; H. G. Roskos; H. Kurz; O. Hollricher; C. Buchal; S. Mantl
Appl. Phys. Lett. 66, 866–868 (1995)
https://doi.org/10.1063/1.113413
Study of μm‐scale spatial variations in strain of a compositionally step‐graded InxGa1−xAs/GaAs(001) heterostructure
Appl. Phys. Lett. 66, 869–871 (1995)
https://doi.org/10.1063/1.113414
Deep levels in undoped In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 grown on GaAs (100) substrates
Appl. Phys. Lett. 66, 872–874 (1995)
https://doi.org/10.1063/1.113415
High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium
Appl. Phys. Lett. 66, 882–884 (1995)
https://doi.org/10.1063/1.113419
Enhancement of critical current density in direct‐current‐sputtered TlBa2Ca2Cu3O9±δ superconducting thin films
Appl. Phys. Lett. 66, 885–887 (1995)
https://doi.org/10.1063/1.113420
Diamond films from combustion of methyl acetylene and propadiene
Appl. Phys. Lett. 66, 891–893 (1995)
https://doi.org/10.1063/1.113422
Electroluminescence coupling in multiple quantum well diodes and solar cells
Appl. Phys. Lett. 66, 894–895 (1995)
https://doi.org/10.1063/1.113423
Oriented ferroelectric thin films of PbTiO3, (Pb,La)TiO3, and Pb(Zr,Ti)O3 by nebulized spray pyrolysis
Appl. Phys. Lett. 66, 896–898 (1995)
https://doi.org/10.1063/1.113424
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Hard x-ray photoemission study of bulk single-crystalline InGaZnO4
Goro Shibata, Yunosuke Takahashi, et al.
Membrane phononic crystals for high- mechanical defect modes at MHz frequencies in piezoelectric aluminum nitride
Anastasiia Ciers, Laurentius Radit Nindito, et al.