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Volume 66, Issue 26

26 June 1995

All Issues

ISSN 0003-6951

EISSN 1077-3118

InAsSb/InAlAs strained quantum‐well lasers emitting at 4.5 μm

H. K. Choi; G. W. Turner; H. Q. Le

Appl. Phys. Lett. 66, 3543–3545 (1995) https://doi.org/10.1063/1.113810

Abstract

View articletitled, InAsSb/InAlAs strained quantum‐well lasers emitting at 4.5 μm

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Small Faraday rotation measurement with a Fabry–Pérot cavity

David Jacob; Marc Vallet; Fabien Bretenaker; Albert Le Floch; Roger Le Naour

Appl. Phys. Lett. 66, 3546–3548 (1995) https://doi.org/10.1063/1.113811

Abstract

View articletitled, Small Faraday rotation measurement with a Fabry–Pérot cavity

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Improved laser performance at 946 and 473 nm from a composite Nd:Y₃Al₅O₁₂ rod

Frank Hanson

Appl. Phys. Lett. 66, 3549–3551 (1995) https://doi.org/10.1063/1.113812

Abstract

View articletitled, Improved laser performance at 946 and 473 nm from a composite Nd:Y3Al5O12 rod

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Ultrahigh precision measurements of optical heterogeneity of high quality fused silica

J. M. De Freitas; M. A. Player

Appl. Phys. Lett. 66, 3552–3554 (1995) https://doi.org/10.1063/1.113813

Abstract

View articletitled, Ultrahigh precision measurements of optical heterogeneity of high quality fused silica

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Super‐resolution through illumination by diffraction‐born evanescent waves

John M. Guerra

Appl. Phys. Lett. 66, 3555–3557 (1995) https://doi.org/10.1063/1.113814

Abstract

View articletitled, Super‐resolution through illumination by diffraction‐born evanescent waves

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High‐power mode‐locked semiconductor lasers using flared waveguides

Alan Mar; Roger Helkey; W. X. Zou; D. Bruce Young; John E. Bowers

Appl. Phys. Lett. 66, 3558–3560 (1995) https://doi.org/10.1063/1.113786

Abstract

View articletitled, High‐power mode‐locked semiconductor lasers using flared waveguides

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Observation of wave front curvature inside a vertical‐cavity surface‐emitting laser

A. K. Jansen van Doorn; M. P. van Exter; J. P. Woerdman

Appl. Phys. Lett. 66, 3561–3563 (1995) https://doi.org/10.1063/1.113787

Abstract

View articletitled, Observation of wave front curvature inside a vertical‐cavity surface‐emitting laser

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150 mW unsaturated output power at 3 μm from a single‐mode‐fiber erbium cascade laser

M. Pollnau; Ch. Ghisler; G. Bunea; M. Bunea; W. Lüthy; H. P. Weber

Appl. Phys. Lett. 66, 3564–3566 (1995) https://doi.org/10.1063/1.113788

Abstract

View articletitled, 150 mW unsaturated output power at 3 μm from a single‐mode‐fiber erbium cascade laser

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Enhancement of the flux density of line radiation in the extreme ultraviolet wavelength region for spectroscopic and plasma diagnostic applications using glass‐capillary converters

V. Kantsyrev; R. Bruch; M. Bailey; A. Shlyaptseva

Appl. Phys. Lett. 66, 3567–3569 (1995) https://doi.org/10.1063/1.113789

Abstract

View articletitled, Enhancement of the flux density of line radiation in the extreme ultraviolet wavelength region for spectroscopic and plasma diagnostic applications using glass‐capillary converters

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Temperature dispersion of refractive indices in crystalline and amorphous silicon

Gorachand Ghosh

Appl. Phys. Lett. 66, 3570–3572 (1995) https://doi.org/10.1063/1.113790

Abstract

View articletitled, Temperature dispersion of refractive indices in crystalline and amorphous silicon

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Phosphorus ablation process as a hydrogen atom probe in a remote H₂ plasma reactor

G. Bruno; M. Losurdo; P. Capezzuto

Appl. Phys. Lett. 66, 3573–3575 (1995) https://doi.org/10.1063/1.113791

Abstract

View articletitled, Phosphorus ablation process as a hydrogen atom probe in a remote H2 plasma reactor

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Nanocomposite films of lead zirconate titanate and metallic nickel by sol‐gel route

T. K. Kundu; D. Chakravorty

Appl. Phys. Lett. 66, 3576–3578 (1995) https://doi.org/10.1063/1.113792

Abstract

View articletitled, Nanocomposite films of lead zirconate titanate and metallic nickel by sol‐gel route

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Diamond deposition using a planar radio frequency inductively coupled plasma

S. P. Bozeman; D. A. Tucker; B. R. Stoner; J. T. Glass; W. M. Hooke

Appl. Phys. Lett. 66, 3579–3581 (1995) https://doi.org/10.1063/1.113793

Abstract

View articletitled, Diamond deposition using a planar radio frequency inductively coupled plasma

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Growth and composition of covalent carbon nitride solids

Z. John Zhang; Shoushan Fan; Charles M. Lieber

Appl. Phys. Lett. 66, 3582–3584 (1995) https://doi.org/10.1063/1.113794

Abstract

View articletitled, Growth and composition of covalent carbon nitride solids

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Effects of linewidth, microstructure, and grain growth on voiding in passivated copper lines

J. A. Nucci; Y. Shacham‐Diamand; J. E. Sanchez, Jr.

Appl. Phys. Lett. 66, 3585–3587 (1995) https://doi.org/10.1063/1.113795

Abstract

View articletitled, Effects of linewidth, microstructure, and grain growth on voiding in passivated copper lines

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Growth of epitaxial MgO films on Sb‐passivated (001)GaAs: Properties of the MgO/GaAs interface

E. J. Tarsa; X. H. Wu; J. P. Ibbetson; J. S. Speck; J. J. Zinck

Appl. Phys. Lett. 66, 3588–3590 (1995) https://doi.org/10.1063/1.113796

Abstract

View articletitled, Growth of epitaxial MgO films on Sb‐passivated (001)GaAs: Properties of the MgO/GaAs interface

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Novel drilling technique in polyimide using visible laser

Belgacem Haba; Yukio Morishige

Appl. Phys. Lett. 66, 3591–3593 (1995) https://doi.org/10.1063/1.113797

Abstract

View articletitled, Novel drilling technique in polyimide using visible laser

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Time‐resolved surface expansion of metals under picosecond laser illumination

Ady Levy; Nabil M. Amer

Appl. Phys. Lett. 66, 3594–3596 (1995) https://doi.org/10.1063/1.113798

Abstract

View articletitled, Time‐resolved surface expansion of metals under picosecond laser illumination

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Differential Al–Ga interdiffusion in AlGaAs/GaAs and AlGaInP/GaInP heterostructures

K. J. Beernink; D. Sun; D. W. Treat; B. P. Bour

Appl. Phys. Lett. 66, 3597–3599 (1995) https://doi.org/10.1063/1.113799

Abstract

View articletitled, Differential Al–Ga interdiffusion in AlGaAs/GaAs and AlGaInP/GaInP heterostructures

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Electromigration induced resistance changes in a single aluminum via

G. B. Alers; A. S. Oates; N. L. Beverly

Appl. Phys. Lett. 66, 3600–3602 (1995) https://doi.org/10.1063/1.113800

Abstract

View articletitled, Electromigration induced resistance changes in a single aluminum via

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Effect of electron‐electron interaction on hot ballistic electron beams

Th. Schäpers; M. Krüger; J. Appenzeller; A. Förster; B. Lengeler; H. Lüth

Appl. Phys. Lett. 66, 3603–3605 (1995) https://doi.org/10.1063/1.113801

Abstract

View articletitled, Effect of electron‐electron interaction on hot ballistic electron beams

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Rate equation model of high‐temperature performance of InGaAsP quantum well lasers

A. A. Bernussi; J. Pikal; H. Temkin; D. L. Coblentz; R. A. Logan

Appl. Phys. Lett. 66, 3606–3608 (1995) https://doi.org/10.1063/1.113802

Abstract

View articletitled, Rate equation model of high‐temperature performance of InGaAsP quantum well lasers

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Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences

P. Roca i Cabarrocas; N. Layadi; T. Heitz; B. Drévillon; I. Solomon

Appl. Phys. Lett. 66, 3609–3611 (1995) https://doi.org/10.1063/1.113803

Abstract

View articletitled, Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences

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Thermal capacitance spectroscopy of epitaxial 3C and 6H‐SiC pn junction diodes grown side by side on a 6H‐SiC substrate

Stephen E. Saddow; Manfred Lang; Thomas Dalibor; Gerhard Pensl; Philip G. Neudeck

Appl. Phys. Lett. 66, 3612–3614 (1995) https://doi.org/10.1063/1.113804

Abstract

View articletitled, Thermal capacitance spectroscopy of epitaxial 3C and 6H‐SiC pn junction diodes grown side by side on a 6H‐SiC substrate

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Back bias depending polarization sensitivity of PtSi/p‐Si Schottky barrier detectors

K. Kapser; P. P. Deimel

Appl. Phys. Lett. 66, 3615–3617 (1995) https://doi.org/10.1063/1.113805

Abstract

View articletitled, Back bias depending polarization sensitivity of PtSi/p‐Si Schottky barrier detectors

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Electron and hole mobility in tris(8‐hydroxyquinolinolato‐N1,O8) aluminum

R. G. Kepler; P. M. Beeson; S. J. Jacobs; R. A. Anderson; M. B. Sinclair; V. S. Valencia; P. A. Cahill

Appl. Phys. Lett. 66, 3618–3620 (1995) https://doi.org/10.1063/1.113806

Abstract

View articletitled, Electron and hole mobility in tris(8‐hydroxyquinolinolato‐N1,O8) aluminum

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Nanoprobe‐induced electrostatic lateral quantization in near‐surface resonant‐tunneling heterostructures

M. D. Taylor; G. C. Wetsel, Jr.; S. E. McBride; R. C. Brown; W. R. Frensley; A. C. Seabaugh; Y.‐C. Kao; E. A. Beam

Appl. Phys. Lett. 66, 3621–3623 (1995) https://doi.org/10.1063/1.113807

Abstract

View articletitled, Nanoprobe‐induced electrostatic lateral quantization in near‐surface resonant‐tunneling heterostructures

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Doping of chemically deposited intrinsic CdS thin films to n type by thermal diffusion of indium

P. J. George; A. Sánchez; P. K. Nair; M. T. S. Nair

Appl. Phys. Lett. 66, 3624–3626 (1995) https://doi.org/10.1063/1.113808

Abstract

View articletitled, Doping of chemically deposited intrinsic CdS thin films to n type by thermal diffusion of indium

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Controlled manipulation of nanoparticles with an atomic force microscope

T. Junno; K. Deppert; L. Montelius; L. Samuelson

Appl. Phys. Lett. 66, 3627–3629 (1995) https://doi.org/10.1063/1.113809

Abstract

View articletitled, Controlled manipulation of nanoparticles with an atomic force microscope

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Direct evidence for the existence of exciton bound on Yb³⁺ ion in In(P,As) crystals

A. Kozanecki; A. Szczerbakow

Appl. Phys. Lett. 66, 3630–3632 (1995) https://doi.org/10.1063/1.114122

Abstract

View articletitled, Direct evidence for the existence of exciton bound on Yb3+ ion in In(P,As) crystals

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Optical phonons in a quantum well containing monolayers

B. K. Ridley

Appl. Phys. Lett. 66, 3633–3635 (1995) https://doi.org/10.1063/1.114123

Abstract

View articletitled, Optical phonons in a quantum well containing monolayers

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Twenty‐four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss

J. Zhao; A. Wang; P. Altermatt; M. A. Green

Appl. Phys. Lett. 66, 3636–3638 (1995) https://doi.org/10.1063/1.114124

Abstract

View articletitled, Twenty‐four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss

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Measuring the tensor nature of stress in silicon using polarized off‐axis Raman spectroscopy

G. H. Loechelt; N. G. Cave; J. Menéndez

Appl. Phys. Lett. 66, 3639–3641 (1995) https://doi.org/10.1063/1.114125

Abstract

View articletitled, Measuring the tensor nature of stress in silicon using polarized off‐axis Raman spectroscopy

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Evolution of strain relaxation in step‐graded SiGe/Si structures

P. M. Mooney; J. L. Jordan‐Sweet; J. O. Chu; F. K. LeGoues

Appl. Phys. Lett. 66, 3642–3644 (1995) https://doi.org/10.1063/1.114126

Abstract

View articletitled, Evolution of strain relaxation in step‐graded SiGe/Si structures

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Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces

Tsunenobu Kimoto; Akira Itoh; Hiroyuki Matsunami

Appl. Phys. Lett. 66, 3645–3647 (1995) https://doi.org/10.1063/1.114127

Abstract

View articletitled, Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces

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Millimeter wave distributed metal‐semiconductor‐metal photodetectors

E. H. Böttcher; D. Bimberg

Appl. Phys. Lett. 66, 3648–3650 (1995) https://doi.org/10.1063/1.114128

Abstract

View articletitled, Millimeter wave distributed metal‐semiconductor‐metal photodetectors

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High speed metal‐semiconductor‐metal photodetector manufactured on GaAs by low‐temperature photoassisted metalorganic chemical vapor deposition

K. S. Boutros; J. C. Roberts; S. M. Bedair; T. F. Carruthers; M. Y. Frankel

Appl. Phys. Lett. 66, 3651–3653 (1995) https://doi.org/10.1063/1.114129

Abstract

View articletitled, High speed metal‐semiconductor‐metal photodetector manufactured on GaAs by low‐temperature photoassisted metalorganic chemical vapor deposition

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Silicon‐on‐insulator produced by helium implantation and thermal oxidation

V. Raineri; S. U. Campisano

Appl. Phys. Lett. 66, 3654–3656 (1995) https://doi.org/10.1063/1.114130

Abstract

View articletitled, Silicon‐on‐insulator produced by helium implantation and thermal oxidation

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Lattice relaxation in In_xAl_1−xAs/GaAs heterostructure grown on exact oriented and misoriented GaAs substrates

Jong‐Hyeob Baek; Bun Lee; Meeyoung Yoon; El‐Hang Lee; Chang Soo Kim

Appl. Phys. Lett. 66, 3657–3659 (1995) https://doi.org/10.1063/1.114131

Abstract

View articletitled, Lattice relaxation in InxAl1−xAs/GaAs heterostructure grown on exact oriented and misoriented GaAs substrates

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Electron paramagnetic resonance study of luminescent stain etched porous silicon

M. Schoisswohl; J. L. Cantin; H. J. von Bardeleben; G. Amato

Appl. Phys. Lett. 66, 3660–3662 (1995) https://doi.org/10.1063/1.114132

Abstract

View articletitled, Electron paramagnetic resonance study of luminescent stain etched porous silicon

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In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition

M. Kitamura; M. Nishioka; J. Oshinowo; Y. Arakawa

Appl. Phys. Lett. 66, 3663–3665 (1995) https://doi.org/10.1063/1.114133

Abstract

View articletitled, In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition

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Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures

Z. Borsosfoldi; M. Rahman; I. A. Larkin; A. R. Long; J. H. Davies; J. M. R. Weaver; M. C. Holland; J. G. Williamson

Appl. Phys. Lett. 66, 3666–3668 (1995) https://doi.org/10.1063/1.114134

Abstract

View articletitled, Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures

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How methanol affects the surface of blue and red emitting porous silicon

J. M. Rehm; G. L. McLendon; L. Tsybeskov; P. M. Fauchet

Appl. Phys. Lett. 66, 3669–3671 (1995) https://doi.org/10.1063/1.114135

Abstract

View articletitled, How methanol affects the surface of blue and red emitting porous silicon

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Tightly confined one‐dimensional states in T‐shaped GaAs edge quantum wires with AlAs barriers

T. Someya; H. Akiyama; H. Sakaki

Appl. Phys. Lett. 66, 3672–3673 (1995) https://doi.org/10.1063/1.114136

Abstract

View articletitled, Tightly confined one‐dimensional states in T‐shaped GaAs edge quantum wires with AlAs barriers

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Electrically tunable coplanar transmission line resonators using YBa₂Cu₃O_7−x/SrTiO₃ bilayers

A. T. Findikoglu; Q. X. Jia; I. H. Campbell; X. D. Wu; D. Reagor; C. B. Mombourquette; D. McMurry

Appl. Phys. Lett. 66, 3674–3676 (1995) https://doi.org/10.1063/1.114137

Abstract

View articletitled, Electrically tunable coplanar transmission line resonators using YBa2Cu3O7−x/SrTiO3 bilayers

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Detection of new superconductors using phase‐spread alloy films

D. Lederman; D. C. Vier; D. Mendoza; J. Santamaría; S. Schultz; Ivan K. Schuller

Appl. Phys. Lett. 66, 3677–3679 (1995) https://doi.org/10.1063/1.114138

Abstract

View articletitled, Detection of new superconductors using phase‐spread alloy films

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Magneto‐optical and high resolution electron microscopy studies of flux pinning at grain boundaries in Bi₂Sr₂CaCu₂O_x crystals

T. Egi; J. G. Wen; H. Kubota; J. Ricketts; N. Koshizuka

Appl. Phys. Lett. 66, 3680–3682 (1995) https://doi.org/10.1063/1.114139

Abstract

View articletitled, Magneto‐optical and high resolution electron microscopy studies of flux pinning at grain boundaries in Bi2Sr2CaCu2Ox crystals

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High‐frequency response of capacitors fabricated from fine grain BaTiO₃ thin films

P. K. Singh; S. Cochrane; W.‐T. Liu; K. Chen; D. B. Knorr; J. M. Borrego; E. J. Rymaszewski; T.‐M. Lu

Appl. Phys. Lett. 66, 3683–3685 (1995) https://doi.org/10.1063/1.114140

Abstract

View articletitled, High‐frequency response of capacitors fabricated from fine grain BaTiO3 thin films

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Area‐selective formation of an organosilane monolayer on silicon oxide nanopatterns fabricated by scanning probe anodization

Hiroyuki Sugimura; Nobuyuki Nakagiri; Nobuyuki Ichinose

Appl. Phys. Lett. 66, 3686–3688 (1995) https://doi.org/10.1063/1.114141

Abstract

View articletitled, Area‐selective formation of an organosilane monolayer on silicon oxide nanopatterns fabricated by scanning probe anodization

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