Skip Nav Destination
Issues
Micromachined submicrometer photodiode for scanning probe microscopy
Appl. Phys. Lett. 66, 2309–2311 (1995)
https://doi.org/10.1063/1.114223
New phase‐change rewritable optical recording film having well suppressed material flow for repeated rewriting
Appl. Phys. Lett. 66, 2312–2314 (1995)
https://doi.org/10.1063/1.113966
Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers
Appl. Phys. Lett. 66, 2315–2317 (1995)
https://doi.org/10.1063/1.113967
All solid state laser source for tunable blue and ultraviolet radiation
Appl. Phys. Lett. 66, 2318–2320 (1995)
https://doi.org/10.1063/1.113968
Photoluminescence imaging of porous silicon using a confocal scanning laser macroscope/microscope
A. C. Ribes; S. Damaskinos; A. E. Dixon; G. E. Carver; C. Peng; P. M. Fauchet; T. K. Sham; I. Coulthard
Appl. Phys. Lett. 66, 2321–2323 (1995)
https://doi.org/10.1063/1.113969
Practical definition of the plasma sheath edge for modeling planar glow discharges
Appl. Phys. Lett. 66, 2329–2330 (1995)
https://doi.org/10.1063/1.113972
Atomic resolution ultrahigh vacuum scanning tunneling microscopy of epitaxial diamond (100) films
Appl. Phys. Lett. 66, 2331–2333 (1995)
https://doi.org/10.1063/1.113973
Rapid densification of porous carbon–carbon composites by thermal‐gradient chemical vapor infiltration
Appl. Phys. Lett. 66, 2334–2336 (1995)
https://doi.org/10.1063/1.113974
Three‐dimensional morphology of a very rough interface formed in the soldering reaction between eutectic SnPb and Cu
Appl. Phys. Lett. 66, 2337–2339 (1995)
https://doi.org/10.1063/1.113975
Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal‐oxide‐silicon carbide structures
Appl. Phys. Lett. 66, 2340–2342 (1995)
https://doi.org/10.1063/1.113976
Mössbauer study of the (Fe1−xNix)4N compounds (0≤x≤0.6)
Appl. Phys. Lett. 66, 2343–2345 (1995)
https://doi.org/10.1063/1.113977
Suppressed gate current in a superlattice‐insulated‐gate field‐effect transistor on InP
Appl. Phys. Lett. 66, 2352–2354 (1995)
https://doi.org/10.1063/1.113980
In situ monitoring of internal surface area during the growth of porous silicon
Appl. Phys. Lett. 66, 2355–2357 (1995)
https://doi.org/10.1063/1.113981
On the origin of oval defects in metalorganic molecular beam epitaxy of InP
Appl. Phys. Lett. 66, 2358–2360 (1995)
https://doi.org/10.1063/1.113982
Electronic noise of submicron n+nn+ diodes under near‐oscillatory macroscopic behaviors
Appl. Phys. Lett. 66, 2361–2363 (1995)
https://doi.org/10.1063/1.113983
Identification of individual bistable defects in avalanche photodiodes
Appl. Phys. Lett. 66, 2367–2369 (1995)
https://doi.org/10.1063/1.113985
Recoil implantation of radioactive transition metals and their investigation in silicon by deep‐level transient spectroscopy
Appl. Phys. Lett. 66, 2370–2372 (1995)
https://doi.org/10.1063/1.113986
Crystalline quality of strain‐free GaAs‐on‐Si structures formed by annealing under ultrahigh pressure
Appl. Phys. Lett. 66, 2373–2375 (1995)
https://doi.org/10.1063/1.113987
Kinetics of interdiffusion in strained nanometer period Si/Ge superlattices studied by Raman scattering
Appl. Phys. Lett. 66, 2376–2378 (1995)
https://doi.org/10.1063/1.113988
Origin of the 1.54 μm luminescence of erbium‐implanted porous silicon
Appl. Phys. Lett. 66, 2379–2381 (1995)
https://doi.org/10.1063/1.113989
Intense blue emission from porous β‐SiC formed on C+‐implanted silicon
Appl. Phys. Lett. 66, 2382–2384 (1995)
https://doi.org/10.1063/1.113990
Quasi‐one‐dimensional single AlGaAs/GaAs Hall bar quantum wires grown on patterned substrates
Appl. Phys. Lett. 66, 2385–2387 (1995)
https://doi.org/10.1063/1.113991
Modification of excitonic emission in a GaAs bulk microcavity
Appl. Phys. Lett. 66, 2388–2390 (1995)
https://doi.org/10.1063/1.113949
Quantum wirelike induced morphology in InGaAs wells grown on InyAl1−yAs tensile buffer layers over (100)InP vicinal surfaces
Appl. Phys. Lett. 66, 2391–2393 (1995)
https://doi.org/10.1063/1.113950
Characterization of iron based precipitates in GaAs layers grown by molecular‐beam epitaxy
Appl. Phys. Lett. 66, 2400–2402 (1995)
https://doi.org/10.1063/1.113953
GeSi/Si bistable diode exhibiting a large on/off conductance ratio
Appl. Phys. Lett. 66, 2403–2405 (1995)
https://doi.org/10.1063/1.113954
Titanium dioxide photocatalysts produced by reactive magnetron sputtering
Appl. Phys. Lett. 66, 2409–2411 (1995)
https://doi.org/10.1063/1.113956
n‐type doping of the diluted magnetic semiconductor Zn1−xMnxSe
Appl. Phys. Lett. 66, 2412–2414 (1995)
https://doi.org/10.1063/1.113957
Across wafer etch rate uniformity in a high density plasma reactor: Experiment and modeling
Appl. Phys. Lett. 66, 2415–2417 (1995)
https://doi.org/10.1063/1.113958
Stoichiometry and thickness variation of YBa2Cu3O7−x in off‐axis pulsed laser deposition
Appl. Phys. Lett. 66, 2418–2420 (1995)
https://doi.org/10.1063/1.113959
Sensitive high‐Tc transition edge bolometer on a micromachined silicon membrane
H. Neff; J. Laukemper; I. A. Khrebtov; A. D. Tkachenko; E. Steinbeiss; W. Michalke; M. Burnus; T. Heidenblut; G. Hefle; B. Schwierzi
Appl. Phys. Lett. 66, 2421–2423 (1995)
https://doi.org/10.1063/1.113960
Substrate stress controlled magnetic domains in amorphous Terfenol‐D films
Appl. Phys. Lett. 66, 2424–2426 (1995)
https://doi.org/10.1063/1.113961
Perpendicular magnetic anisotropy and strong magneto‐optic properties of SrRuO3 epitaxial films
Appl. Phys. Lett. 66, 2427–2429 (1995)
https://doi.org/10.1063/1.113962
Carbon nanotubes synthesized in a hydrogen arc discharge
Appl. Phys. Lett. 66, 2430–2432 (1995)
https://doi.org/10.1063/1.113963
Effects of chemical composition on humidity sensitivity of Al/BaTiO3/Si structure
Appl. Phys. Lett. 66, 2436–2438 (1995)
https://doi.org/10.1063/1.113965
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.