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Volume 66, Issue 15

10 April 1995

All Issues

ISSN 0003-6951

EISSN 1077-3118

Polarization of lasing emission in microdisk laser diodes

N. C. Frateschi; A. P. Kanjamala; A. F. J. Levi; T. Tanbun‐Ek

Appl. Phys. Lett. 66, 1859–1861 (1995) https://doi.org/10.1063/1.113301

Abstract

View articletitled, Polarization of lasing emission in microdisk laser diodes

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1.54 μm wavelength emission of erbium‐doped silicon films grown by ion beam epitaxy using sputtering‐type metal ion source

Morito Matsuoka; Shun‐ichi Tohno

Appl. Phys. Lett. 66, 1862–1864 (1995) https://doi.org/10.1063/1.113302

Abstract

View articletitled, 1.54 μm wavelength emission of erbium‐doped silicon films grown by ion beam epitaxy using sputtering‐type metal ion source

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Optically induced quasi‐phase matching in strontium barium niobate

Anthony S. Kewitsch; Terrence W. Towe; Gregory J. Salamo; Amnon Yariv; Min Zhang; Mordechai Segev; Edward J. Sharp; Ratnakar R. Neurgaonkar

Appl. Phys. Lett. 66, 1865–1867 (1995) https://doi.org/10.1063/1.113303

Abstract

View articletitled, Optically induced quasi‐phase matching in strontium barium niobate

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Nonlinear absorption of a carbocyanine dye 1,1′,3,3,3′,3′‐hexamethylindotricarbocyanine iodide using a z‐scan technique

S. N. R. Swatton; K. R. Welford; S. J. Till; J. R. Sambles

Appl. Phys. Lett. 66, 1868–1870 (1995) https://doi.org/10.1063/1.113304

Abstract

View articletitled, Nonlinear absorption of a carbocyanine dye 1,1′,3,3,3′,3′‐hexamethylindotricarbocyanine iodide using a z‐scan technique

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Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides

I. Gontijo; D. T. Neilson; J. E. Ehrlich; A. C. Walker; G. T. Kennedy; W. Sibbett

Appl. Phys. Lett. 66, 1871–1873 (1995) https://doi.org/10.1063/1.113305

Abstract

View articletitled, Nonlinear single wavelength polarization switching in InGaAs/InP quantum well waveguides

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Effect of negative gain suppression on the stability of laser diodes

S. Bennett; C. M. Snowden; S. Iezekiel

Appl. Phys. Lett. 66, 1874–1876 (1995) https://doi.org/10.1063/1.113306

Abstract

View articletitled, Effect of negative gain suppression on the stability of laser diodes

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High‐efficiency continuous operation HgBr excimer lamp excited by microwave discharge

Hideki Furusawa; Shinsuke Okada; Minoru Obara

Appl. Phys. Lett. 66, 1877–1879 (1995) https://doi.org/10.1063/1.113307

Abstract

View articletitled, High‐efficiency continuous operation HgBr excimer lamp excited by microwave discharge

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Pulse width reduction in single mode diode lasers via external injection of optical pulses

Claudio R. Mirasso

Appl. Phys. Lett. 66, 1880–1882 (1995) https://doi.org/10.1063/1.113308

Abstract

View articletitled, Pulse width reduction in single mode diode lasers via external injection of optical pulses

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Second harmonic generation in hexagonal silicon carbide

P. M. Lundquist; W. P. Lin; G. K. Wong; M. Razeghi; J. B. Ketterson

Appl. Phys. Lett. 66, 1883–1885 (1995) https://doi.org/10.1063/1.113309

Abstract

View articletitled, Second harmonic generation in hexagonal silicon carbide

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Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation

J. P. Girardeau‐Montaut; C. Girardeau‐Montaut; M. Afif; A. Perez; S. D. Moustaïzis

Appl. Phys. Lett. 66, 1886–1888 (1995) https://doi.org/10.1063/1.113310

Abstract

View articletitled, Enhancement of photoelectric emission sensitivity of tungsten by potassium ion implantation

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Gettering of nickel to cavities in silicon introduced by hydrogen implantation

B. Mohadjeri; J. S. Williams; J. Wong‐Leung

Appl. Phys. Lett. 66, 1889–1891 (1995) https://doi.org/10.1063/1.113311

Abstract

View articletitled, Gettering of nickel to cavities in silicon introduced by hydrogen implantation

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Technique to suppress dislocation formation during high‐dose oxygen implantation of Si

O. W. Holland; D. K. Thomas; D. S. Zhou

Appl. Phys. Lett. 66, 1892–1894 (1995) https://doi.org/10.1063/1.113312

Abstract

View articletitled, Technique to suppress dislocation formation during high‐dose oxygen implantation of Si

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Nanoscale hardness and microfriction of titanium nitride films deposited from the reaction of tetrakis (dimethylamino) titanium with ammonia

Y. W. Bae; W. Y. Lee; T. M. Besmann; P. J. Blau

Appl. Phys. Lett. 66, 1895–1896 (1995) https://doi.org/10.1063/1.113313

Abstract

View articletitled, Nanoscale hardness and microfriction of titanium nitride films deposited from the reaction of tetrakis (dimethylamino) titanium with ammonia

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Paradoxical predictions and a minimum failure time in electromigration

R. G. Filippi; G. A. Biery; R. A. Wachnik

Appl. Phys. Lett. 66, 1897–1899 (1995) https://doi.org/10.1063/1.113314

Abstract

View articletitled, Paradoxical predictions and a minimum failure time in electromigration

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Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

F. Stubhan; M. Ferguson; H.‐J. Füsser; R. J. Behm

Appl. Phys. Lett. 66, 1900–1902 (1995) https://doi.org/10.1063/1.113315

Abstract

View articletitled, Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

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Existence of enhanced solid state diffusion during mechanical alloying of Si and Ge

J. Schilz; K. Pixius; W. Wunderlich; W. A. Kaysser

Appl. Phys. Lett. 66, 1903–1905 (1995) https://doi.org/10.1063/1.113316

Abstract

View articletitled, Existence of enhanced solid state diffusion during mechanical alloying of Si and Ge

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Kinetic routes to the growth of monodisperse islands

Tue T. Ngo; R. Stanley Williams

Appl. Phys. Lett. 66, 1906–1908 (1995) https://doi.org/10.1063/1.113317

Abstract

View articletitled, Kinetic routes to the growth of monodisperse islands

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Effect of PH₃ on the dissociative chemisorption of SiH₄ and Si₂H₆ on Si(100): Implications on the growth of in situ doped Si thin films

N. Maity; L.‐Q. Xia; J. R. Engstrom

Appl. Phys. Lett. 66, 1909–1911 (1995) https://doi.org/10.1063/1.113318

Abstract

View articletitled, Effect of PH3 on the dissociative chemisorption of SiH4 and Si2H6 on Si(100): Implications on the growth of in situ doped Si thin films

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Deep‐oxide planar buried‐channel AlGaAs–GaAs quantum well heterostructure waveguides with low bend loss

M. R. Krames; E. I. Chen; N. Holonyak, Jr.; A. C. Crook; T. A. DeTemple; P.‐A. Besse

Appl. Phys. Lett. 66, 1912–1914 (1995) https://doi.org/10.1063/1.113319

Abstract

View articletitled, Deep‐oxide planar buried‐channel AlGaAs–GaAs quantum well heterostructure waveguides with low bend loss

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Highly efficient light emission from ZnS_1−xTe_x alloys

I. K. Sou; K. S. Wong; Z. Y. Yang; H. Wang; G. K. L. Wong

Appl. Phys. Lett. 66, 1915–1917 (1995) https://doi.org/10.1063/1.113275

Abstract

View articletitled, Highly efficient light emission from ZnS1−xTex alloys

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Epitaxial regrowth of n⁺ polycrystalline silicon at 850 °C, induced by fluorine implantation

N. E. Moiseiwitsch; C. Marsh; P. Ashburn; G. R. Booker

Appl. Phys. Lett. 66, 1918–1920 (1995) https://doi.org/10.1063/1.113276

Abstract

View articletitled, Epitaxial regrowth of n+ polycrystalline silicon at 850 °C, induced by fluorine implantation

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Midwave infrared stimulated emission from a GaInSb/InAs superlattice

R. H. Miles; D. H. Chow; Y.‐H. Zhang; P. D. Brewer; R. G. Wilson

Appl. Phys. Lett. 66, 1921–1923 (1995) https://doi.org/10.1063/1.113277

Abstract

View articletitled, Midwave infrared stimulated emission from a GaInSb/InAs superlattice

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Surface strains in epitaxial systems

L. J. Gray; M. F. Chisholm; Theodore Kaplan

Appl. Phys. Lett. 66, 1924–1926 (1995) https://doi.org/10.1063/1.113278

Abstract

View articletitled, Surface strains in epitaxial systems

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High strain effects evidenced by Raman scattering in arsenic clusters in As‐implanted GaAs

P. S. Pizani; A. Mlayah; J. Groenen; R. Carles; A. Claverie

Appl. Phys. Lett. 66, 1927–1929 (1995) https://doi.org/10.1063/1.113279

Abstract

View articletitled, High strain effects evidenced by Raman scattering in arsenic clusters in As‐implanted GaAs

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Representative reflectance anisotropy spectra from Al_(x)Ga_(1−x)As layers (x=0 to 1.0) grown on GaAs(001) by molecular beam epitaxy

K. C. Rose; S. J. Morris; D. I. Westwood; D. A. Woolf; R. H. Williams; W. Richter

Appl. Phys. Lett. 66, 1930–1932 (1995) https://doi.org/10.1063/1.113280

Abstract

View articletitled, Representative reflectance anisotropy spectra from Al(x)Ga(1−x)As layers (x=0 to 1.0) grown on GaAs(001) by molecular beam epitaxy

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Microwave characteristics of coplanar waveguides on helium‐implanted epitaxial p‐InP

H. G. Rao; Q. Z. Liu; A. L. Kellner; X. S. Jiang; S. S. Lau; P. K. L. Yu

Appl. Phys. Lett. 66, 1933–1935 (1995) https://doi.org/10.1063/1.113281

Abstract

View articletitled, Microwave characteristics of coplanar waveguides on helium‐implanted epitaxial p‐InP

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Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs

Masanori Shinohara; Naohisa Inoue

Appl. Phys. Lett. 66, 1936–1938 (1995) https://doi.org/10.1063/1.113282

Abstract

View articletitled, Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs

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Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

A. Krotkus; R. Viselga; K. Bertulis; V. Jasutis; S. Marcinkevičius; U. Olin

Appl. Phys. Lett. 66, 1939–1941 (1995) https://doi.org/10.1063/1.113283

Abstract

View articletitled, Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

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Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers

H. Lee; P. K. York; R. J. Menna; R. U. Martinelli; D. Z. Garbuzov; S. Y. Narayan; J. C. Connolly

Appl. Phys. Lett. 66, 1942–1944 (1995) https://doi.org/10.1063/1.113284

Abstract

View articletitled, Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers

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On temperature dependence of the optically active behavior of an infrared active defect in silicon

Yi Shi; Fengmei Wu; Youdou Zheng; Masashi Suezawa; Masato Imai; Koji Sumino

Appl. Phys. Lett. 66, 1945–1947 (1995) https://doi.org/10.1063/1.113285

Abstract

View articletitled, On temperature dependence of the optically active behavior of an infrared active defect in silicon

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Photomodulated reflectance spectra of In_0.2Ga_0.8As/GaAs single quantum wells

S. Jiang; S. C. Shen; S. M. Wang; T. G. Andersson

Appl. Phys. Lett. 66, 1948–1950 (1995) https://doi.org/10.1063/1.113286

Abstract

View articletitled, Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells

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Anomalous electrical and optical properties of polymeric carbons

V. Chellappa; B. Z. Jang

Appl. Phys. Lett. 66, 1951–1953 (1995) https://doi.org/10.1063/1.113287

Abstract

View articletitled, Anomalous electrical and optical properties of polymeric carbons

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Binding and diffusion of a Si adatom around the type A step on Si(001) c(4×2)

Jun Wang; D. A. Drabold; A. Rockett

Appl. Phys. Lett. 66, 1954–1956 (1995) https://doi.org/10.1063/1.113288

Abstract

View articletitled, Binding and diffusion of a Si adatom around the type A step on Si(001) c(4×2)

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InGaAs/GaAs multiple strained‐layer structure grown on a lattice‐matched InGaAs substrate wafer

I. J. Fritz; J. F. Klem; J. E. Schirber; J. A. Olsen; W. A. Bonner

Appl. Phys. Lett. 66, 1957–1959 (1995) https://doi.org/10.1063/1.113289

Abstract

View articletitled, InGaAs/GaAs multiple strained‐layer structure grown on a lattice‐matched InGaAs substrate wafer

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Temperature dependence of photoluminescence lifetimes in ordered GaInP₂

R. A. J. Thomeer; F. A. J. M. Driessen; L. J. Giling

Appl. Phys. Lett. 66, 1960–1962 (1995) https://doi.org/10.1063/1.113290

Abstract

View articletitled, Temperature dependence of photoluminescence lifetimes in ordered GaInP2

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Enhancement of the Schottky barrier height of Au/ZnSSe diodes

A. Z. Wang; W. A. Anderson

Appl. Phys. Lett. 66, 1963–1965 (1995) https://doi.org/10.1063/1.113291

Abstract

View articletitled, Enhancement of the Schottky barrier height of Au/ZnSSe diodes

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Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing

T. A. Strand; B. J. Thibeault; D. S. L. Mui; L. A. Coldren; P. M. Petroff; E. L. Hu

Appl. Phys. Lett. 66, 1966–1968 (1995) https://doi.org/10.1063/1.113292

Abstract

View articletitled, Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing

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CCl₄ doping of GaN grown by metalorganic molecular beam epitaxy

C. R. Abernathy; J. D. MacKenzie; S. J. Pearton; W. S. Hobson

Appl. Phys. Lett. 66, 1969–1971 (1995) https://doi.org/10.1063/1.113293

Abstract

View articletitled, CCl4 doping of GaN grown by metalorganic molecular beam epitaxy

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Electron Hall mobility of n‐GaN

D. L. Rode; D. K. Gaskill

Appl. Phys. Lett. 66, 1972–1973 (1995) https://doi.org/10.1063/1.113294

Abstract

View articletitled, Electron Hall mobility of n‐GaN

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Schottky‐based band lineups for refractory semiconductors

M. W. Wang; J. O. McCaldin; J. F. Swenberg; T. C. McGill; R. J. Hauenstein

Appl. Phys. Lett. 66, 1974–1976 (1995) https://doi.org/10.1063/1.113295

Abstract

View articletitled, Schottky‐based band lineups for refractory semiconductors

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Blue photoluminescence and local structure of Si nanostructures embedded in SiO₂ matrices

Qi Zhang; S. C. Bayliss; D. A. Hutt

Appl. Phys. Lett. 66, 1977–1979 (1995) https://doi.org/10.1063/1.113296

Abstract

View articletitled, Blue photoluminescence and local structure of Si nanostructures embedded in SiO2 matrices

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Band‐structure tailoring by electric field in a weakly coupled electron‐hole system

Y. Naveh; B. Laikhtman

Appl. Phys. Lett. 66, 1980–1982 (1995) https://doi.org/10.1063/1.113297

Abstract

View articletitled, Band‐structure tailoring by electric field in a weakly coupled electron‐hole system

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Microwave mixing and noise in the two‐dimensional electron gas medium at low temperatures

J. X. Yang; J. Li; C. F. Musante; K. S. Yngvesson

Appl. Phys. Lett. 66, 1983–1985 (1995) https://doi.org/10.1063/1.113298

Abstract

View articletitled, Microwave mixing and noise in the two‐dimensional electron gas medium at low temperatures

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Electrical characterization of surface defects in GaSb created by hydrogen plasma

P. S. Dutta; K. S. Sangunni; H. L. Bhat; Vikram Kumar

Appl. Phys. Lett. 66, 1986–1988 (1995) https://doi.org/10.1063/1.113299

Abstract

View articletitled, Electrical characterization of surface defects in GaSb created by hydrogen plasma

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Anomalous optical response of Nd_1.85Ce_0.15CuO_4−y superconducting thin films

S. Bhattacharya; S. N. Mao; W. Jiang; M. Rajeswari; Qi Li; X. X. Xi; T. Venkatesan

Appl. Phys. Lett. 66, 1989–1991 (1995) https://doi.org/10.1063/1.113300

Abstract

View articletitled, Anomalous optical response of Nd1.85Ce0.15CuO4−y superconducting thin films

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Submillimeter wave responses in NbN/AlN/NbN tunnel junctions

Yoshinori Uzawa; Zhen Wang; Akira Kawakami; Bokuji Komiyama

Appl. Phys. Lett. 66, 1992–1994 (1995) https://doi.org/10.1063/1.113672

Abstract

View articletitled, Submillimeter wave responses in NbN/AlN/NbN tunnel junctions

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Nonresonant microwave absorption studies of surface passivation of superconducting YBa₂Cu₃O_7−δ thin films

Amit Rastogi; V. Sivasubramanian; V. R. K. Murthy; M. S. Hegde; S. V. Bhat

Appl. Phys. Lett. 66, 1995–1997 (1995) https://doi.org/10.1063/1.113673

Abstract

View articletitled, Nonresonant microwave absorption studies of surface passivation of superconducting YBa2Cu3O7−δ thin films

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An application of electrothermal feedback for high resolution cryogenic particle detection

K. D. Irwin

Appl. Phys. Lett. 66, 1998–2000 (1995) https://doi.org/10.1063/1.113674

Abstract

View articletitled, An application of electrothermal feedback for high resolution cryogenic particle detection

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Y–Ba–Cu–O multilayer structures with amorphous dielectric layers for multichip modules using ion‐assisted pulsed‐laser deposition

R. P. Reade; P. Berdahl; R. E. Russo; L. W. Schaper

Appl. Phys. Lett. 66, 2001–2003 (1995) https://doi.org/10.1063/1.114285

Abstract

View articletitled, Y–Ba–Cu–O multilayer structures with amorphous dielectric layers for multichip modules using ion‐assisted pulsed‐laser deposition

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