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Microcavity effects in a spin‐coated polymer two‐layer system
U. Lemmer; R. Hennig; W. Guss; A. Ochse; J. Pommerehne; R. Sander; A. Greiner; R. F. Mahrt; H. Bässler; J. Feldmann; E. O. Göbel
Appl. Phys. Lett. 66, 1301–1303 (1995)
https://doi.org/10.1063/1.113222
Enhanced mass‐transport smoothing of f/0.7 GaP microlenses by use of sealed ampoules
Appl. Phys. Lett. 66, 1304–1306 (1995)
https://doi.org/10.1063/1.113223
Picosecond all‐optical switching in a Fabry–Perot cavity containing polydiacetylene
Appl. Phys. Lett. 66, 1310–1312 (1995)
https://doi.org/10.1063/1.113225
Electroluminescence from CdSe quantum‐dot/polymer composites
Appl. Phys. Lett. 66, 1316–1318 (1995)
https://doi.org/10.1063/1.113227
Helium bubbles in silicon: Structure and optical properties
Appl. Phys. Lett. 66, 1319–1321 (1995)
https://doi.org/10.1063/1.113228
Role of hydrogen ions in plasma‐enhanced chemical vapor deposition of hydrocarbon films, investigated by in situ ellipsometry
Appl. Phys. Lett. 66, 1322–1324 (1995)
https://doi.org/10.1063/1.113229
Fabrication of metallic nanowires with a scanning tunneling microscope
Appl. Phys. Lett. 66, 1325–1327 (1995)
https://doi.org/10.1063/1.113230
Transmission electron microscopy observation of interfacial reactions in high‐temperature sputtered Al alloy/TiN system
Appl. Phys. Lett. 66, 1328–1330 (1995)
https://doi.org/10.1063/1.113231
Heteroepitaxial growth of BaTiO3 films on Si by pulsed laser deposition
Appl. Phys. Lett. 66, 1331–1333 (1995)
https://doi.org/10.1063/1.113232
Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin‐film capacitors with La‐Sr‐Co‐O electrodes
Appl. Phys. Lett. 66, 1337–1339 (1995)
https://doi.org/10.1063/1.113234
Photoemission capacitance transient spectroscopy of n‐type GaN
Appl. Phys. Lett. 66, 1340–1342 (1995)
https://doi.org/10.1063/1.113235
Controlled III–V semiconductor cluster nucleation and epitaxial growth via electron‐beam lithography
Appl. Phys. Lett. 66, 1343–1345 (1995)
https://doi.org/10.1063/1.113195
Carrier recombination studies of ZnCdSe/ZnSe single quantum wells grown by molecular beam epitaxy
Appl. Phys. Lett. 66, 1346–1348 (1995)
https://doi.org/10.1063/1.113196
Studying the insulator–conductor interface with a scanning tunneling microscope
Appl. Phys. Lett. 66, 1352–1354 (1995)
https://doi.org/10.1063/1.113198
Optical properties of ternary and quaternary IV–VI semiconductor layers on (100) BaF2 substrates
Appl. Phys. Lett. 66, 1355–1357 (1995)
https://doi.org/10.1063/1.113199
Piezoelectric effects in (001)‐oriented double barrier resonant tunneling structures
Appl. Phys. Lett. 66, 1358–1360 (1995)
https://doi.org/10.1063/1.113200
Semi‐insulating 6H–SiC grown by physical vapor transport
H. McD. Hobgood; R. C. Glass; G. Augustine; R. H. Hopkins; J. Jenny; M. Skowronski; W. C. Mitchel; M. Roth
Appl. Phys. Lett. 66, 1364–1366 (1995)
https://doi.org/10.1063/1.113202
Reverse biased photoconductive detectors and switches with separate absorption and detection area
P. Riel; E. Greger; K. Reingruber; M. Ennes; P. Kiesel; M. Kneissl; G. H. Döhler; G. Tränkle; G. Weimann
Appl. Phys. Lett. 66, 1367–1369 (1995)
https://doi.org/10.1063/1.113203
Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
Appl. Phys. Lett. 66, 1370–1372 (1995)
https://doi.org/10.1063/1.113204
High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition
Appl. Phys. Lett. 66, 1373–1375 (1995)
https://doi.org/10.1063/1.113205
Hot electron luminescence in In0.53Ga0.47As transistor channel
Appl. Phys. Lett. 66, 1376–1378 (1995)
https://doi.org/10.1063/1.113206
Correlation of oscillations in a quantum dot with three contacts
Appl. Phys. Lett. 66, 1379–1381 (1995)
https://doi.org/10.1063/1.113207
Uniform and efficient GaAs/AlGaAs quantum dots
Appl. Phys. Lett. 66, 1382–1384 (1995)
https://doi.org/10.1063/1.113208
Segregation and trapping of erbium during silicon molecular beam epitaxy
Appl. Phys. Lett. 66, 1385–1387 (1995)
https://doi.org/10.1063/1.113209
Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope
Appl. Phys. Lett. 66, 1388–1390 (1995)
https://doi.org/10.1063/1.113210
Observation of carrier concentration saturation effect in n‐type AlxGa1−xAs
Appl. Phys. Lett. 66, 1391–1393 (1995)
https://doi.org/10.1063/1.113211
Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing
Appl. Phys. Lett. 66, 1394–1396 (1995)
https://doi.org/10.1063/1.113212
Annealing behavior of AlxGa1−xAs:C grown by metalorganic molecular beam epitaxy
Appl. Phys. Lett. 66, 1397–1399 (1995)
https://doi.org/10.1063/1.113213
Indirect–direct band gap transition and enhanced optical absorption of GaP/AlP random superlattice
Appl. Phys. Lett. 66, 1400–1402 (1995)
https://doi.org/10.1063/1.113214
Damage induced by plasma etching: On the correlation of results from photoluminescence and transport characterization techniques
Appl. Phys. Lett. 66, 1403–1405 (1995)
https://doi.org/10.1063/1.113215
Very low resistance nonalloyed ohmic contacts using low‐temperature molecular beam epitaxy of GaAs
Appl. Phys. Lett. 66, 1412–1414 (1995)
https://doi.org/10.1063/1.113218
Integrated high‐Tc multiloop magnetometer
F. Ludwig; E. Dantsker; R. Kleiner; D. Koelle; John Clarke; S. Knappe; D. Drung; H. Koch; Neil McN. Alford; Tim W. Button
Appl. Phys. Lett. 66, 1418–1420 (1995)
https://doi.org/10.1063/1.113220
Crystalline orientation of YBa2Cu3Oy film prepared by liquid‐phase epitaxial growth on NdGaO3 substrate
Appl. Phys. Lett. 66, 1421–1423 (1995)
https://doi.org/10.1063/1.113221
Giant magnetoresistance in epitaxial Nd0.7Sr0.3MnO3−δ thin films
Appl. Phys. Lett. 66, 1427–1429 (1995)
https://doi.org/10.1063/1.113267
Area selective deposition of gold on silicon surface patterned by tip‐induced anodization in scanning probe microcopy
Appl. Phys. Lett. 66, 1430–1431 (1995)
https://doi.org/10.1063/1.113268
Shear force microscopy with capacitance detection for near‐field scanning optical microscopy
Appl. Phys. Lett. 66, 1432–1434 (1995)
https://doi.org/10.1063/1.113269
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.