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Wavelength tuning in spherical liquid dye lasers by controlling the cavity Q values
Appl. Phys. Lett. 65, 3305–3307 (1994)
https://doi.org/10.1063/1.112442
Surface scattering of x rays from InP (001) wafers
Appl. Phys. Lett. 65, 3317–3319 (1994)
https://doi.org/10.1063/1.112446
Power saturation and the effect of argon on the electron spin resonance of diamond deposited from a microwave plasma
Appl. Phys. Lett. 65, 3320–3322 (1994)
https://doi.org/10.1063/1.112403
Room‐temperature characterization of InGaAs/AlAs multiple quantum well p‐i‐n diodes
Appl. Phys. Lett. 65, 3323–3325 (1994)
https://doi.org/10.1063/1.112404
Interface roughness scattering in GaAs–AlGaAs modulation‐doped heterostructures
Bin Yang; Yong‐hai Cheng; Zhan‐guo Wang; Ji‐ben Liang; Qi‐wei Liao; Lan‐ying Lin; Zhan‐ping Zhu; Bo Xu; Wei Li
Appl. Phys. Lett. 65, 3329–3331 (1994)
https://doi.org/10.1063/1.112382
High efficiency submicron light‐emitting resonant tunneling diodes
Appl. Phys. Lett. 65, 3332–3334 (1994)
https://doi.org/10.1063/1.112383
Molecular beam epitaxial growth of high quality InSb
Appl. Phys. Lett. 65, 3338–3340 (1994)
https://doi.org/10.1063/1.112384
Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester
Appl. Phys. Lett. 65, 3341–3343 (1994)
https://doi.org/10.1063/1.112385
Enhancement of high‐temperature photoluminescence in strained Si1−xGex/Si heterostructures by surface passivation
Appl. Phys. Lett. 65, 3344–3346 (1994)
https://doi.org/10.1063/1.112386
Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates
Appl. Phys. Lett. 65, 3347–3349 (1994)
https://doi.org/10.1063/1.112387
Blue electroluminescence from porous silicon carbide
Appl. Phys. Lett. 65, 3350–3352 (1994)
https://doi.org/10.1063/1.112388
Optical transitions in strained Si1−yCy layers on Si(001)
Appl. Phys. Lett. 65, 3356–3358 (1994)
https://doi.org/10.1063/1.112390
Subnanosecond photovoltaic response in 6H–SiC
Appl. Phys. Lett. 65, 3359–3361 (1994)
https://doi.org/10.1063/1.112391
Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05≤x≤0.3
Appl. Phys. Lett. 65, 3362–3364 (1994)
https://doi.org/10.1063/1.112392
Infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells
Appl. Phys. Lett. 65, 3365–3367 (1994)
https://doi.org/10.1063/1.112393
Surface cleaning of GaAs by in situ chemical beam etching
Appl. Phys. Lett. 65, 3368–3370 (1994)
https://doi.org/10.1063/1.112394
Relation between porous silicon photoluminescence and its voltage‐tunable electroluminescence
Appl. Phys. Lett. 65, 3371–3373 (1994)
https://doi.org/10.1063/1.112395
Real‐time electron cyclotron oscillations observed by terahertz techniques in semiconductor heterostructures
Appl. Phys. Lett. 65, 3377–3379 (1994)
https://doi.org/10.1063/1.112397
Single layer YBa2Cu3O7 radio frequency SQUID magnetometers with direct‐coupled pickup coils and flip‐chip flux transformers
Y. Zhang; U. Krüger; R. Kutzner; R. Wördenweber; J. Schubert; W. Zander; E. Sodtke; A. I. Braginski; M. Strupp
Appl. Phys. Lett. 65, 3380–3382 (1994)
https://doi.org/10.1063/1.112398
Thickness dependence of La2−xSrxCuO4 films
Marta Z. Cieplak; M. Berkowski; S. Guha; E. Cheng; A. S. Vagelos; D. J. Rabinowitz; B. Wu; I. E. Trofimov; P. Lindenfeld
Appl. Phys. Lett. 65, 3383–3385 (1994)
https://doi.org/10.1063/1.112399
Electrical tuning of the kinetic inductance of high temperature superconductors
S. Cho; H. Erlig; A. Z. Kain; H. R. Fetterman; G.‐C. Liang; M. E. Johansson; B. F. Cole; R. S. Withers
Appl. Phys. Lett. 65, 3389–3391 (1994)
https://doi.org/10.1063/1.112400
Effect of Ag2O addition in Y0.9Ca0.1Ba2Cu4O8 on the contact characteristics of Y0.9Ca0.1Ba2Cu4O8/Ag interface
Appl. Phys. Lett. 65, 3392–3394 (1994)
https://doi.org/10.1063/1.112401
Coexistence of grains with differing orthorhombicity in high quality YBa2Cu3O7−δ thin films
E. I. de Obaldia; K. F. Ludwig, Jr.; S. J. Berkowitz; A. M. Clark; W. J. Skocpol; P. M. Mankiewich; D. A. Rudman; A. Roshko; R. Moerman; L. Vale; R. H. Ono
Appl. Phys. Lett. 65, 3395–3397 (1994)
https://doi.org/10.1063/1.112402
Optical mixing in a patterned YBa2Cu3O7−δ thin film
M. Lindgren; M. A. Zorin; V. Trifonov; M. Danerud; D. Winkler; B. S. Karasik; G. N. Gol’tsman; E. M. Gershenzon
Appl. Phys. Lett. 65, 3398–3400 (1994)
https://doi.org/10.1063/1.112405
Superconducting quantum interference device magnetometry during ultrahigh vacuum growth
Appl. Phys. Lett. 65, 3401–3403 (1994)
https://doi.org/10.1063/1.112406
Influence of heat treatment on the structure and magnetic properties of sputtered BaCoTiFe10O19 films
Appl. Phys. Lett. 65, 3404–3406 (1994)
https://doi.org/10.1063/1.112407
Erratum: ‘‘Charge sensitivity of a single electron transistor’’ [Appl. Phys. Lett. 65, 1847 (1994)]
Appl. Phys. Lett. 65, 3416 (1994)
https://doi.org/10.1063/1.113094
Erratum: ‘‘Electron and hole mobilities in lightly doped silicon’’ [Appl. Phys. Lett. 64, 2007 (1994)]
Appl. Phys. Lett. 65, 3416 (1994)
https://doi.org/10.1063/1.113095
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.