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Native defect related optical properties of ZnGeP2
Appl. Phys. Lett. 65, 2759–2761 (1994)
https://doi.org/10.1063/1.112555
Temperature behavior of a bulk InGaAsP/InP ridge waveguide structure for polarization insensitive optical amplifier operation
Appl. Phys. Lett. 65, 2762–2764 (1994)
https://doi.org/10.1063/1.113031
Optical parametric frequency conversion properties of KTiOAsO4
Appl. Phys. Lett. 65, 2765–2767 (1994)
https://doi.org/10.1063/1.112556
CuInSSe‐doped glass saturable absorbers for the passive mode‐locking of neodymium lasers
Appl. Phys. Lett. 65, 2768–2770 (1994)
https://doi.org/10.1063/1.112557
Comparison of optical nonlinearities in piezoelectric strained [111]‐ and [001]‐grown (In,Ga)As/(Al,Ga)As quantum wells
Appl. Phys. Lett. 65, 2771–2773 (1994)
https://doi.org/10.1063/1.112558
Optical properties of lithium‐intercalated V2O5‐based films treated in CF4 gas
Appl. Phys. Lett. 65, 2774–2776 (1994)
https://doi.org/10.1063/1.112559
Electrically induced uniform planar alignment of S*C liquid crystals on homeotropically treated plates
Appl. Phys. Lett. 65, 2777–2779 (1994)
https://doi.org/10.1063/1.112560
Growth of highly oriented Bi4Ti3O12(104) thin films on Al2O3(0001) substrates using pulsed laser deposition
Appl. Phys. Lett. 65, 2780–2782 (1994)
https://doi.org/10.1063/1.112561
Strain in pseudomorphic films grown on arbitrarily oriented substrates
Appl. Phys. Lett. 65, 2789–2791 (1994)
https://doi.org/10.1063/1.112564
Boron doping of silicon using coalloying with aluminium
Appl. Phys. Lett. 65, 2792–2794 (1994)
https://doi.org/10.1063/1.112992
Electrospray organometallic chemical vapor deposition—A novel technique for preparation of II–VI quantum dot composites
Appl. Phys. Lett. 65, 2795–2797 (1994)
https://doi.org/10.1063/1.112568
Effect of the barrier thickness on interface defect density in amorphous‐Si:H/amorphous‐Si1−xCx:H multilayers
Appl. Phys. Lett. 65, 2798–2800 (1994)
https://doi.org/10.1063/1.112569
Precipitation in Fe‐ or Ni‐implanted and annealed GaAs
Appl. Phys. Lett. 65, 2801–2803 (1994)
https://doi.org/10.1063/1.112570
Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe epilayers
Appl. Phys. Lett. 65, 2804–2806 (1994)
https://doi.org/10.1063/1.112571
Correlation between x‐ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices
Appl. Phys. Lett. 65, 2812–2814 (1994)
https://doi.org/10.1063/1.112574
Tunneling current due to incident electrons derived from the valence bands in AlSb–InAs–AlSb double‐barrier structures
Appl. Phys. Lett. 65, 2821–2823 (1994)
https://doi.org/10.1063/1.112576
Plasma etched polycrystalline hot‐filament chemical vapor deposited diamond thin films and their electrical characteristics
Appl. Phys. Lett. 65, 2827–2829 (1994)
https://doi.org/10.1063/1.112578
One‐monolayer‐terraced structure in ZnSe/ZnSSe superlattices as revealed by Brewster‐angle reflection spectroscopy
Appl. Phys. Lett. 65, 2830–2832 (1994)
https://doi.org/10.1063/1.112531
Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties
Appl. Phys. Lett. 65, 2833–2835 (1994)
https://doi.org/10.1063/1.112991
Ethyliodide n‐type doping of Hg1−xCdxTe (x=0.24) grown by metalorganic molecular beam epitaxy
Appl. Phys. Lett. 65, 2836–2838 (1994)
https://doi.org/10.1063/1.112535
Effect of gas composition on texture of diamond films
Appl. Phys. Lett. 65, 2839–2841 (1994)
https://doi.org/10.1063/1.112537
Electron emission from diamond coated silicon field emitters
J. Liu; V. V. Zhirnov; G. J. Wojak; A. F. Myers; W. B. Choi; J. J. Hren; S. D. Wolter; M. T. McClure; B. R. Stoner; J. T. Glass
Appl. Phys. Lett. 65, 2842–2844 (1994)
https://doi.org/10.1063/1.112538
Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge
Appl. Phys. Lett. 65, 2845–2847 (1994)
https://doi.org/10.1063/1.112511
Deep levels in GaAs grown by atomic layer molecular beam epitaxy
Appl. Phys. Lett. 65, 2848–2850 (1994)
https://doi.org/10.1063/1.112512
Atomic force microscopy study of strained InGaAs quantum disks self‐organizing on GaAs (n11)B substrates
Appl. Phys. Lett. 65, 2854–2856 (1994)
https://doi.org/10.1063/1.112514
Superconducting Bi‐cuprate thick film Tc(0)=110 K on DyBa2SnO5.5: A newly developed perovskite substrate
Appl. Phys. Lett. 65, 2857–2859 (1994)
https://doi.org/10.1063/1.112515
Pulsed laser deposition of high‐quality NbN thin films
Appl. Phys. Lett. 65, 2860–2862 (1994)
https://doi.org/10.1063/1.112516
High‐resolution Rutherford backscattering study of ultrathin YBaCuO film growth on SrTiO3 and MgO
Appl. Phys. Lett. 65, 2863–2865 (1994)
https://doi.org/10.1063/1.112517
High‐temperature superconductor Josephson junctions with a gradient Pr‐doped Y1−xPrxBa2Cu3O7−δ (x=0.1, 0.3, 0.5) as barriers
Q. X. Jia; X. D. Wu; D. Reager; S. R. Foltyn; C. Mombourquette; P. Tiwari; I. H. Campbell; R. J. Houlton; D. E. Peterson
Appl. Phys. Lett. 65, 2866–2868 (1994)
https://doi.org/10.1063/1.112518
SrCuO2/(Sr,Ca)CuO2 superlattice growth by pulsed‐laser deposition
Appl. Phys. Lett. 65, 2869–2871 (1994)
https://doi.org/10.1063/1.112519
Phase equilibria and melt processing of Bi2Sr2Ca1Cu2O8+x tapes at reduced oxygen partial pressures
Appl. Phys. Lett. 65, 2872–2874 (1994)
https://doi.org/10.1063/1.112520
Frequency modulation of the superconducting parallel‐plate microwave resonator by laser irradiation
Appl. Phys. Lett. 65, 2875–2877 (1994)
https://doi.org/10.1063/1.112521
Atomic force microscope using piezoresistive cantilevers and combined with a scanning electron microscope
Appl. Phys. Lett. 65, 2878–2880 (1994)
https://doi.org/10.1063/1.113030
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.