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Externally deposited phase‐compensating dielectric mirrors for asymmetric Fabry–Perot cavity tuning
Appl. Phys. Lett. 64, 2913–2915 (1994)
https://doi.org/10.1063/1.111409
Harmonic generation in ferroelectric liquid crystals: Phase matching loci
Appl. Phys. Lett. 64, 2919–2921 (1994)
https://doi.org/10.1063/1.111411
Observation of optical response of avalanche photodiodes at photon‐counting light levels
Appl. Phys. Lett. 64, 2925–2927 (1994)
https://doi.org/10.1063/1.111413
Photoluminescence of zinc‐blende GaN under hydrostatic pressure
Appl. Phys. Lett. 64, 2928–2930 (1994)
https://doi.org/10.1063/1.111414
1‐to‐42 optoelectronic interconnection for intra‐multichip‐module clock signal distribution
Appl. Phys. Lett. 64, 2931–2933 (1994)
https://doi.org/10.1063/1.111415
Wave propagation in periodic nonlinear dielectric superlattices
Appl. Phys. Lett. 64, 2934–2936 (1994)
https://doi.org/10.1063/1.111416
Bulk‐induced alignment of nematic liquid crystals by photopolymerization
Appl. Phys. Lett. 64, 2946–2948 (1994)
https://doi.org/10.1063/1.111419
Smoothing effect of GaAs/AlxGa1−xAs superlattices grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. 64, 2949–2951 (1994)
https://doi.org/10.1063/1.111422
Activation energy for Ostwald ripening of Al2Cu in Al(4 wt. % Cu) thin films using a lateral diffusion couple
Appl. Phys. Lett. 64, 2952–2954 (1994)
https://doi.org/10.1063/1.111423
Origin and suppression of misfit dislocations in heavily boron‐doped (100) silicon wafers
Appl. Phys. Lett. 64, 2955–2957 (1994)
https://doi.org/10.1063/1.111424
Mixing of Fe2O3 markers into amorphous and crystalline alumina
Appl. Phys. Lett. 64, 2958–2960 (1994)
https://doi.org/10.1063/1.111425
Chemical effect of ternary additions on amorphization in Fe‐C systems by mechanical alloying
Appl. Phys. Lett. 64, 2961–2963 (1994)
https://doi.org/10.1063/1.111394
Molecular beam epitaxy of CdF2 layers on CaF2(111) and Si(111)
Appl. Phys. Lett. 64, 2964–2966 (1994)
https://doi.org/10.1063/1.111395
High dielectric constant (Ba,Sr)TiO3 thin films prepared on RuO2/sapphire
Appl. Phys. Lett. 64, 2967–2969 (1994)
https://doi.org/10.1063/1.111396
Surface roughening transition and critical layer thickness in strained‐layer heteroepitaxy of EuTe on PbTe (111)
Appl. Phys. Lett. 64, 2970–2972 (1994)
https://doi.org/10.1063/1.111374
Depth distribution of reactive ion etching‐induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements
Appl. Phys. Lett. 64, 2979–2981 (1994)
https://doi.org/10.1063/1.111377
Theoretical study on threshold energy and impact ionization coefficient for electrons in Si1−xGex
Appl. Phys. Lett. 64, 2985–2987 (1994)
https://doi.org/10.1063/1.111379
Role of hot electron base transport in abrupt emitter InP/Ga0.43In0.53As heterojunction bipolar transistors
Appl. Phys. Lett. 64, 2988–2990 (1994)
https://doi.org/10.1063/1.111380
Band discontinuity of strained‐layer GaInAs/GaInAsP heterostructures
Appl. Phys. Lett. 64, 2991–2993 (1994)
https://doi.org/10.1063/1.111381
Effect of carbonization on the growth of 3C‐SiC on Si (111) by silacyclobutane
Appl. Phys. Lett. 64, 3000–3002 (1994)
https://doi.org/10.1063/1.111384
Very long‐wavelength GaAs/AlxGa1−xAs infrared hot electron transistor
Appl. Phys. Lett. 64, 3003–3005 (1994)
https://doi.org/10.1063/1.111385
Blue light emission from silicon surfaces prepared by spark‐erosion and related techniques
Appl. Phys. Lett. 64, 3006–3008 (1994)
https://doi.org/10.1063/1.111386
Transient space‐charge‐limited currents: The time‐of‐flight and post‐transit analysis in hydrogenated amorphous silicon
Appl. Phys. Lett. 64, 3009–3011 (1994)
https://doi.org/10.1063/1.111387
New selective doping technique for boron using a HBO2 source and a thin oxide mask
Appl. Phys. Lett. 64, 3012–3014 (1994)
https://doi.org/10.1063/1.111388
Large transconductances observed in an independently contacted coupled double quantum well
Appl. Phys. Lett. 64, 3018–3020 (1994)
https://doi.org/10.1063/1.111390
Growth of InSb using tris(dimethylamino)antimony and trimethylindium
Appl. Phys. Lett. 64, 3021–3023 (1994)
https://doi.org/10.1063/1.111391
Mobility enhancement in double δ‐doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures by grading the heterointerfaces
Appl. Phys. Lett. 64, 3027–3029 (1994)
https://doi.org/10.1063/1.111392
Determination of the superconducting current path in Bi2223/Ag tapes
Appl. Phys. Lett. 64, 3030–3032 (1994)
https://doi.org/10.1063/1.111393
High transition temperature superconducting surface acoustic wave devices
Appl. Phys. Lett. 64, 3033–3035 (1994)
https://doi.org/10.1063/1.111397
Heterodyne mixing with Nb tunnel junctions above the gap frequency
G. de Lange; C. E. Honingh; J. J. Kuipers; H. H. A. Schaeffer; R. A. Panhuyzen; T. M. Klapwijk; H. van de Stadt; M. M. W. M. de Graauw
Appl. Phys. Lett. 64, 3039–3041 (1994)
https://doi.org/10.1063/1.111399
Selective trilayer deposition process for fabricating Nb/Al‐AlOx/Nb Josephson tunnel junctions
Appl. Phys. Lett. 64, 3042–3044 (1994)
https://doi.org/10.1063/1.111371
Very large magnetoresistance in perovskite‐like La‐Ca‐Mn‐O thin films
Appl. Phys. Lett. 64, 3045–3047 (1994)
https://doi.org/10.1063/1.111372
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Piezoelectric phononic integrated circuits
Krishna C. Balram