Skip Nav Destination
Issues
Noise suppression for photorefractive image amplification in the LiNbO3:Fe crystal sheet
Appl. Phys. Lett. 64, 2332–2334 (1994)
https://doi.org/10.1063/1.111631
Polarization‐independent wavelength filter using a grating‐assisted vertical directional coupler in InP
Appl. Phys. Lett. 64, 2335–2337 (1994)
https://doi.org/10.1063/1.111632
Phase conjugation of BaTiO3:Ce by backward stimulated photorefractive scattering
Appl. Phys. Lett. 64, 2341–2343 (1994)
https://doi.org/10.1063/1.111608
Transmission electron microscopy characterization of InxGa1−xAs substrates grown by heteroepitaxial lateral overgrowth
Appl. Phys. Lett. 64, 2344–2346 (1994)
https://doi.org/10.1063/1.111609
Raman scattering and x‐ray diffraction investigations of highly textured (Pb1−xLax)TiO3 thin films
Appl. Phys. Lett. 64, 2350–2352 (1994)
https://doi.org/10.1063/1.111611
Thermal expansion of polycrystalline diamond produced by chemical vapor deposition
Appl. Phys. Lett. 64, 2353–2355 (1994)
https://doi.org/10.1063/1.111612
Kinetic suppression of islanding in impurity‐mediated heteroepitaxial growth of germanium on silicon
Appl. Phys. Lett. 64, 2356–2358 (1994)
https://doi.org/10.1063/1.111613
Long‐wavelength stacked SiGe/Si heterojunction internal photoemission infrared detectors using multiple SiGe/Si layers
Appl. Phys. Lett. 64, 2370–2372 (1994)
https://doi.org/10.1063/1.111617
Photoluminescence of Si/SiGe/Si quantum wells on separation by oxygen implantation substrate
Appl. Phys. Lett. 64, 2373–2375 (1994)
https://doi.org/10.1063/1.111618
Single electron transport and current quantization in a novel quantum dot structure
Appl. Phys. Lett. 64, 2379–2381 (1994)
https://doi.org/10.1063/1.111620
Temperature dependence of cathodoluminescence from thin GaAs‐AlGaAs multiple quantum wells
Appl. Phys. Lett. 64, 2382–2384 (1994)
https://doi.org/10.1063/1.111621
Ultrafast carrier trapping and slow recombination in ion‐bombarded silicon on sapphire measured via THz spectroscopy
Appl. Phys. Lett. 64, 2385–2387 (1994)
https://doi.org/10.1063/1.111622
Ultraviolet photosulfidation of III‐V compound semiconductors: A new approach to surface passivation
Appl. Phys. Lett. 64, 2388–2390 (1994)
https://doi.org/10.1063/1.111623
Electroluminescence from porous silicon with conducting polymer film contacts
Appl. Phys. Lett. 64, 2394–2396 (1994)
https://doi.org/10.1063/1.111625
Low‐temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition
Appl. Phys. Lett. 64, 2397–2399 (1994)
https://doi.org/10.1063/1.111626
Evidence for population inversion in excited electron states of a double barrier resonant tunneling structure
Appl. Phys. Lett. 64, 2400–2402 (1994)
https://doi.org/10.1063/1.111627
Back side Raman measurements on Ge/Pd/n‐GaAs ohmic contact structures
K. Wuyts; J. Watté; R. E. Silverans; M. Van Hove; G. Borghs; C. J. Palmstro/m; L. T. Florez; H. Münder
Appl. Phys. Lett. 64, 2406–2408 (1994)
https://doi.org/10.1063/1.111582
Threshold dose for ion‐induced intermixing in InGaAs/GaAs quantum wells
L. B. Allard; G. C. Aers; P. G. Piva; P. J. Poole; M. Buchanan; I. M. Templeton; T. E. Jackman; S. Charbonneau; U. Akano; I. V. Mitchell
Appl. Phys. Lett. 64, 2412–2414 (1994)
https://doi.org/10.1063/1.111584
High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems
David M. Wilt; Navid S. Fatemi; Richard W. Hoffman, Jr.; Phillip P. Jenkins; David J. Brinker; David Scheiman; Roland Lowe; Maria Fauer; Raj K. Jain
Appl. Phys. Lett. 64, 2415–2417 (1994)
https://doi.org/10.1063/1.111585
Dimerization induced incorporation nonlinearities in GaAsP
Appl. Phys. Lett. 64, 2418–2420 (1994)
https://doi.org/10.1063/1.111586
Uncooled InSb/In1−xAlxSb mid‐infrared emitter
Appl. Phys. Lett. 64, 2433–2435 (1994)
https://doi.org/10.1063/1.111981
Asymmetric dark current in quantum well infrared photodetectors
Appl. Phys. Lett. 64, 2436–2438 (1994)
https://doi.org/10.1063/1.111591
Excitonic properties of ZnSe/ZnSeS superlattices
Appl. Phys. Lett. 64, 2439–2441 (1994)
https://doi.org/10.1063/1.111592
Superconducting readout of semiconductor memory at liquid nitrogen temperature
Appl. Phys. Lett. 64, 2442–2444 (1994)
https://doi.org/10.1063/1.111593
Influence of inductance induced noise in an YBa2Cu3O7 dc‐SQUID at high operation temperatures
Appl. Phys. Lett. 64, 2445–2447 (1994)
https://doi.org/10.1063/1.111594
Measurement of small distances between light spots by domain wall displacements
Appl. Phys. Lett. 64, 2448–2450 (1994)
https://doi.org/10.1063/1.111595
Tapping mode atomic force microscopy in liquid
Appl. Phys. Lett. 64, 2454–2456 (1994)
https://doi.org/10.1063/1.111597
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
J. Wang, D. G. Rickel, et al.